公开(公告)号：US10985295B2

公开(公告)日：2021-04-20

申请号：US16891670

申请日：2020-06-03

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Bo-Jiun Hu ,  Tsung-Hsun Chiang ,  Wen-Hung Chuang ,  Kuan-Yi Lee ,  Yu-Ling Lin ,  Chien-Fu Shen ,  Tsun-Kai Ko

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/40

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first contact layer on the first semiconductor layer; a second contact layer on the second semiconductor layer, wherein the first contact layer and the second contact layer comprise a metal material other than gold (Au) or copper (Cu); a first pad on the semiconductor stack; a second pad on the semiconductor stack.

公开(公告)号：US10964847B2

公开(公告)日：2021-03-30

申请号：US16446059

申请日：2019-06-19

Applicant: EPISTAR CORPORATION

Inventor： Schang-Jing Hon ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chien-Fu Shen ,  Jia-Kuen Wang ,  Hung-Che Chen

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/54 ,  H01L33/44 ,  H01L33/46 ,  H01L33/20 ,  H01L33/24

Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a reflective layer formed on the light-emitting semiconductor stack; a barrier layer formed on the reflective stack; a protection layer formed on the barrier layer, comprising a first through hole and a second through hole; a first height balancer filled in the first through hole and formed on the protection layer; a second height balancer filled in the second through hole and formed on the protection layer; and a conductive contact layer comprising a first conductive part formed on the first height balancer and a second conductive part formed on the second height balancer.

公开(公告)号：US10680136B2

公开(公告)日：2020-06-09

申请号：US16416488

申请日：2019-05-20

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Wen-Hung Chuang ,  Tzu-Yao Tseng ,  Cheng-Lin Lu

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/62 ,  H01L33/32 ,  F21K9/23 ,  H01L33/06 ,  H01L33/12 ,  F21K9/232 ,  F21Y115/10 ,  F21K9/69

Abstract: A light-emitting device comprises a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; a reflective layer located on the second semiconductor layer and comprising an outer edge and a second area, wherein a distance between the first edge and the outer edge is greater than 0 μm and is not greater than 10 μm; and a first contact part comprising a metal formed on the reflective layer and the first semiconductor layer, wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer from a top-view of the light-emitting device.

公开(公告)号：US10396246B2

公开(公告)日：2019-08-27

申请号：US15437438

申请日：2017-02-20

Applicant: EPISTAR CORPORATION

Inventor： Jia-Kuen Wang ,  Chao-Hsing Chen

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/36 ,  H01L33/40 ,  H01L33/44 ,  H01L25/075 ,  H01L33/56 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L33/64 ,  F21K9/232 ,  F21Y115/10 ,  F21V23/06

Abstract: An optoelectronic device includes a semiconductor stack, including a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer; a first metal layer formed on a top surface of the second semiconductor layer; a second metal layer formed on a top surface of the first semiconductor layer; an insulative layer formed on the top surface of the first semiconductor layer and the top surface of the second semiconductor layer; wherein a space between a sidewall of the first metal layer and a sidewall of the semiconductor stack is less than 3 μm.

公开(公告)号：US20190074409A1

公开(公告)日：2019-03-07

申请号：US16182241

申请日：2018-11-06

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Tsung-Hsun Chiang ,  Chien-Chih Liao ,  Wen-Hung Chuang ,  Min-Yen Tsai ,  Bo-Jiun Hu

IPC: H01L33/44 ,  H01L33/40 ,  H01L33/02 ,  H01L33/62 ,  H01L33/38 ,  H01L23/00

Abstract: A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.

公开(公告)号：US10217906B2

公开(公告)日：2019-02-26

申请号：US15880067

申请日：2018-01-25

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Wen-Hung Chuang ,  Cheng-Lin Lu

IPC: H01L33/62 ,  H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/00 ,  H01L33/32 ,  F21K9/23 ,  H01L33/06 ,  H01L33/12 ,  F21K9/232 ,  F21Y115/10 ,  F21K9/69

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a surrounding part surrounding the semiconductor structure and exposing a surface of the first semiconductor layer; a first insulating structure formed on the semiconductor structure, including a plurality of protrusions covering the surface of the first semiconductor layer and a plurality of recesses exposing the surface of the first semiconductor layer; a first contact portion formed on the surrounding part and contacting the surface of the first semiconductor layer by the plurality of recesses; a first pad formed on the semiconductor structure; and a second pad formed on the semiconductor structure.

公开(公告)号：US10153402B2

公开(公告)日：2018-12-11

申请号：US15669613

申请日：2017-08-04

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Tsung-Hsun Chiang ,  Chien-Chih Liao ,  Wen-Hung Chuang ,  Min-Yen Tsai ,  Bo-Jiun Hu

IPC: H01L33/44 ,  H01L23/00 ,  H01L33/40 ,  H01L33/62 ,  H01L33/38 ,  H01L33/02

Abstract: A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, an active layer, and a second semiconductor layer; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on the semiconductor light-emitting stack; wherein in a top view, the cushion part is disposed in a center region of the light-emitting element.

公开(公告)号：US09859467B2

公开(公告)日：2018-01-02

申请号：US14791949

申请日：2015-07-06

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Chien-Chih Liao ,  Tzu-Yao Tseng ,  Tsun-Kai Ko ,  Chien-Fu Shen

IPC: H01L33/38 ,  H01L33/40

CPC classification number: H01L33/38 ,  H01L33/405

Abstract: An optoelectronic device, comprising: a first semiconductor layer comprising four boundaries, a corner formed by two of the neighboring boundaries, a first surface, and a second surface opposite to the first surface; a second semiconductor layer formed on the first surface of the first semiconductor layer; a second conductive type electrode formed on the second semiconductor layer; and two first conductive type electrodes formed on the first surface, wherein the first conductive type electrodes are separated and formed a pattern.

公开(公告)号：US20170317255A1

公开(公告)日：2017-11-02

申请号：US15652987

申请日：2017-07-18

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun Hsieh ,  Guan-Ru He ,  Chao-Hsing Chen ,  Jui-Hung Yeh ,  Chia-Liang Hsu

IPC: H01L33/62 ,  H01L25/075

CPC classification number: H01L33/62 ,  H01L21/568 ,  H01L25/0753 ,  H01L2224/04105 ,  H01L2224/18 ,  H01L2224/19 ,  H01L2924/3512

Abstract: The present application discloses a light-emitting array, comprising a first light-emitting chip; a second light-emitting chip; and a conductive line electrically connected to the first light-emitting chip and the second light-emitting chip, wherein the conductive line includes a first segment and a second segment having a radius curvature different from that of the first segment.

公开(公告)号：USD764422S1

公开(公告)日：2016-08-23

申请号：US29542297

申请日：2015-10-13

Applicant: EPISTAR CORPORATION

Designer： Schang-Jing Hon ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chien-Fu Shen ,  Jia-Kuen Wang ,  Hung-Che Chen