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公开(公告)号：SG2013062914A
公开(公告)日：2014-03-28
申请号：SG2013062914
申请日：2013-08-19
Applicant: GEN ELECTRIC
Inventor： FOUST DONALD FRANKLIN , GARBER ROBERT ANDREW , METZGER WYATT KEITH , SHUBA ROMAN , CAO HONGBO , FELDMAN-PEABODY SCOTT DANIEL , CLARK LAURA ANNE , SHAN YINGHUI
Abstract: Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.
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公开(公告)号：DE10219655A1
公开(公告)日：2003-01-09
申请号：DE10219655
申请日：2002-05-02
Applicant: GEN ELECTRIC
Abstract: A method and apparatus for preventing the formation of leachable mercury in mercury arc vapor discharge lamps is provided which comprises providing in the lamp structure an effective amount of a silver compound, gold compound, or combination thereof.
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Patent Agency Ranking
公开(公告)号：SE0201345L
公开(公告)日：2002-11-04
申请号：SE0201345
申请日：2002-05-03
Applicant: GEN ELECTRIC
Abstract: A method and apparatus for preventing the formation of leachable mercury in mercury arc vapor discharge lamps is provided which comprises providing in the lamp structure an effective amount of a silver compound, gold compound, or combination thereof.
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公开(公告)号：AU6370900A
公开(公告)日：2001-03-19
申请号：AU6370900
申请日：2000-07-25
Applicant: GEN ELECTRIC
Inventor： SILVA JAMES MANIO , FOUST DONALD FRANKLIN , FYVIE THOMAS JOSEPH
Abstract: This invention relates to a method for removing impurities from a brine solution, the brine solution comprising a water soluble chelating agent, the method comprising the steps of:a) adjusting the pH of the brine solution to a pH of from about 2 to about 4;b) passing the brine solution through a first functionalized resin; the first functionalized resin having functional groups capable of removing multivalent metal cations from the brine solution;c) adjusting the pH of the brine solution to a pH of from about 9 to about 11.5; andd) passing the brine solution through a second functionalized resin; the second functionalized resin having functional groups capable of removing alkaline earth metal cations from the brine solution.
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公开(公告)号：DE69009973T2
公开(公告)日：1995-02-02
申请号：DE69009973
申请日：1990-12-24
Applicant: GEN ELECTRIC
Inventor： DUMAS WILLIAM VINCENT , FOUST DONALD FRANKLIN
Abstract: A polyimide surface is pretreated in preparation for an adhesion promotion treatment and subsequent metallization on the surface, wherein the pretreatment comprises the steps of: (A) contacting the polyimide surface with an aqueous solution of nitric acid having a concentration of about 35 to about 70% by weight or an aqueous solution of hydrochloric acid having a concentration of about 10 to about 38% by weight; (B) rinsing the acid-treated polyimide surface with water so as to substantially remove the acid from the surface of the polyimide; (C) contacting the rinsed polyimide surface with a mild etching agent, resulting in the formation of a residual film on the polyimide surface; (D) contacting the etched polyimide surface with a basic solution, and (E) removing the residual film formed on the surface of the polyimide after contact with the mild etching agent in step (C). The method of this invention allows both filled and unfilled polyimide substrates to be electroless plated in a consistent manner and provides improved adhesion between the polymer and subsequently deposited metals.
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公开(公告)号：DE68908488T2
公开(公告)日：1994-04-14
申请号：DE68908488
申请日：1989-05-23
Applicant: GEN ELECTRIC
Inventor： FOUST DONALD FRANKLIN , LAMBY EDWARD JOHN , KARAS BRADLEY ROSS , DUMAS WILLIAM VINCENT , JERABEK ELIHU CALVIN
Abstract: An improved method for pretreating a polyimide surface in preparation for an adhesion promotion treatment and subsequent metallization is disclosed, wherein the pretreatment comprises mild etching of the surface, contact of the surface with a basic solution, and contact of the surface with a cationic surfactant which is capable of removing a residual film formed on the surface after the mild etching step. This invention further includes articles such as printed circuit boards, which comprise a polyimide substrate pretreated as described above and then treated with an adhesion promoter, wherein an electrolessly-applied metal layer is disposed on the substrate, and an electrolytically-applied metal layer free of chemical additives is disposed on the electrolessly-applied layer. The article may include an additional electrolytically-applied layer containing chemical additives and disposed on top of the first electrolytic layer.
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公开(公告)号：DE69003981D1
公开(公告)日：1993-11-25
申请号：DE69003981
申请日：1990-03-26
Applicant: GEN ELECTRIC
Inventor： FOUST DONALD FRANKLIN , DUMAS WILLIAM VINCENT
Abstract: The method is provided for treating the surface of a polyetherimide substrate to improve its adhesion characteristics for electrolessly deposited metal, such as copper. There is employed a series of surface treatments including the initial immersion of the polyetherimide substrate in sulfuric acid, contact with aqueous base, such as potassium hydroxide, followed by oxidation with an alkali metal permanganate such as potassium permanganate, and surface treatment with a reducing agent, such as a hydroxylamine salt. Polyetherimide metal composites are also provided.
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