公开(公告)号：MY118631A

公开(公告)日：2004-12-31

申请号：MYPI9904305

申请日：1999-10-06

Applicant: IBM

Inventor： FURUKAWA TOSHIHARU ,  HAKEY MARK C ,  HOLMES STEVEN J ,  HORAK DAVID V ,  RABIDOUX PAUL A

IPC: H01L21/4763 ,  H01L21/027 ,  H01L21/768

Abstract: THE PRESENT INVENTION PROVIDES FOR AN IMPROVED METHOD OF CREATING VIAS (730, 735) AND TRENCHES (737-739) DURING MICROCHIP FABRICATION. ACCORDING TO THE INVENTION, THE VIAS AND TRENCHES ARE SELF-ALIGNED DURING THE PHOTOLITHOGRAPHY PROCESS BY USING TWO LAYERS OF SPECIALLY SELECTED RESISTS (205, 210, 1804, 1806) AND EXPOSING THE RESISTS SUCH THAT THE LOWER RESIST IS EXPOSED ONLY WHERE AN OPENING HAS BEEN FORMED IN THE UPPER RESIST LAYER. THIS SELF-ALIGNING ENABLES THE VIAS TO BE PRINTED AS ELONGATED SHAPES, WHICH ALLOWS FOR THE USE OF PARTICULARLY EFFECTIVE IMAGE ENHANCEMENT TECHNIQUES. THE INVENTION FURTHER PROVIDES A SIMPLIFIED PROCEDURE FOR CREATING VIAS AND TRENCHES, IN THAT ONLY ONE ETCH STEP IS REQUIRED TO SIMULTANEOUSLY CREATE BOTHVIAS AND TRENCHES. AN ALTERNATIVE EMBODIMENT OF THE INVENTION ALLOWS LOOPED OR LINKED IMAGES, SUCH AS THOSE PRINTED USING IMAGE ENHANCEMENT TECHNIQUES, TO BE TRIMMED TO FORM ISOLATED FEATURES.

公开(公告)号：CA1334911C

公开(公告)日：1995-03-28

申请号：CA609377

申请日：1989-08-24

Applicant: IBM

Inventor： DOBUZINSKY DAVID M ,  HAKEY MARK C ,  HOLMES STEVEN J ,  HORAK DAVID V

IPC: C08G77/06 ,  C08G77/48 ,  C08G77/60 ,  C09D183/00 ,  C09D183/16 ,  C23C14/14 ,  C23C14/24 ,  G03F7/075 ,  G03F7/16 ,  H01L21/027 ,  H01L21/30 ,  H01L21/312

Abstract: Disclosed is a process for forming a film comprising a polysilane composition on a substrate. The film is formed by vapor deposition directly on a substrate, thus avoiding the cumbersome steps ordinarily encountered in preparing and applying polysilanes by conventional spin application techniques. The film is used in a lithographic process for forming an image on a substrate.

公开(公告)号：PH27127A

公开(公告)日：1993-03-16

申请号：PH39885

申请日：1990-01-12

Applicant: IBM

Inventor： DOBUZINSKY DAVID M ,  HORAK DAVID V ,  HOLMES STEVEN J

IPC: C08G77/06 ,  C08G77/48 ,  C08G77/60 ,  C09D183/00 ,  C09D183/16 ,  C23C14/14 ,  C23C14/24 ,  G03F7/075 ,  G03F7/16 ,  H01L21/027 ,  H01L21/30 ,  H01L21/312

Abstract: Disclosed is a process for forming a film comprising a polysilane composition on a substrate. The film is formed by vapor deposition directly on a substrate, thus avoiding the cumbersome steps ordinarily encountered in preparing and applying polysilanes by conventional spin application techniques. The film is used in a lithographic process for forming an image on a substrate.

公开(公告)号：DE3861783D1

公开(公告)日：1991-03-28

申请号：DE3861783

申请日：1988-03-29

Applicant: IBM

Inventor： HOLMES STEVEN J

IPC: G03F7/00 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/26 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027

Abstract: A process for improved vapor phase silylation of photoresist is disclosed. The process uses silylation materials which either produce a strong base such as dimethylamine upon reaction with a resist film or which contain an improved chemical leaving group such as acetate. The process is effective at temperatures of 135 C and below. Preferred silylation materials are N,N-dimethylaminotrimethylsilane and trimethylsilylacetate.