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公开(公告)号：DE102006007093B4
公开(公告)日：2008-08-14
申请号：DE102006007093
申请日：2006-02-15
Applicant: INFINEON TECHNOLOGIES AG
Inventor： SCHULZE HANS-JOACHIM , BARTHELMESS REINER , PIKORZ DIRK
IPC: H01L21/56 , H01L23/28 , H01L29/739 , H01L29/78
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公开(公告)号：DE102005041335B4
公开(公告)日：2007-05-24
申请号：DE102005041335
申请日：2005-08-31
Applicant: INFINEON TECHNOLOGIES AG
Inventor： SCHULZE HANS-JOACHIM , KELLNER-WERDEHAUSEN UWE , BARTHELMESS REINER , NIEDERNOSTHEIDE FRANZ-JOSEF
IPC: H01L29/06 , H01L29/739 , H01L29/74 , H01L29/78
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公开(公告)号：DE102005026408B3
公开(公告)日：2007-02-01
申请号：DE102005026408
申请日：2005-06-08
Applicant: INFINEON TECHNOLOGIES AG
IPC: H01L21/328 , H01L21/265 , H01L21/324 , H01L29/739 , H01L29/74 , H01L29/861
Abstract: A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, the method including providing a semiconductor body having a first and a second side and a basic doping of a first conduction type. The method further includes irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side. The method also includes carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.
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公开(公告)号：DE102005023882B3
公开(公告)日：2007-02-01
申请号：DE102005023882
申请日：2005-05-24
Applicant: INFINEON TECHNOLOGIES AG
IPC: H01L29/861 , H01L21/329
Abstract: Starting from semiconductor body (1) rear side (12) there is sequence of strongly (8) and weakly (7) doped N-zones and weakly doped P-zone (6) with PN-load junction (4) between weakly doped N- and P-zones.Orthogonally to vertical direction are spaced, strongly P-doped islands (54-57) extending into weakly P-doped zone. In weakly P-doped zone is fitted spaced further zone (91-97) whose charge carrier service life is reduced. Independent claims are included fo rmethod of forming high speed diode.
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公开(公告)号：DE102005063332A1
公开(公告)日：2007-01-25
申请号：DE102005063332
申请日：2005-05-24
Applicant: INFINEON TECHNOLOGIES AG
IPC: H01L29/861
Abstract: Starting from semiconductor body (1) rear side (12) there is sequence of strongly (8) and weakly (7) doped N-zones and weakly doped P-zone (6) with PN-load junction (4) between weakly doped N- and P-zones.Orthogonally to vertical direction are spaced, strongly P-doped islands (54-57) extending into weakly P-doped zone. In weakly P-doped zone is fitted spaced further zone (91-97) whose charge carrier service life is reduced. Independent claims are included fo rmethod of forming high speed diode.
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Patent Agency Ranking
公开(公告)号：DE102005027447A1
公开(公告)日：2006-12-28
申请号：DE102005027447
申请日：2005-06-14
Applicant: INFINEON TECHNOLOGIES AG
Inventor： SCHULZE HANS-JOACHIM , NIEDERNOSTHEIDE FRANZ-JOSEF , KELLNER-WERDEHAUSEN UWE , BARTHELMESS REINER
IPC: H01L29/06 , H01L21/328 , H01L29/739 , H01L29/74 , H01L29/78
Abstract: The method involves providing with a semiconductor body (1), which exhibits a volume range (2) and an adjacent boundary region (3) thereon in the lateral direction (r). A pn-charge transition (25) is formed between an n-doped zone (20) and a p-doped zone (10). The acceptor type states of the generated particles (30) are irradiated in the first irradiation zone (5).
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公开(公告)号：DE10344592A1
公开(公告)日：2005-05-19
申请号：DE10344592
申请日：2003-09-25
Applicant: EUPEC GMBH & CO KG , INFINEON TECHNOLOGIES AG
Inventor： KELLER-WERDEHAUSEN UWE , SCHULZE HANS-JOACHIM , NIEDERNOSTHEIDE FRANZ-JOSEF , BARTHELMESS REINER
IPC: H01L21/265 , H01L21/332 , H01L29/74
Abstract: A positive-doped collector (8), a negative-doped base (NDB) (7), a positive-doped base (PDB) (6) and a negative-doped emitter (5,51) fit consecutively in a semiconductor body (1). A reverse breakdown structure is formed by a section of the PDB and a linked section (3) of the NDB.
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公开(公告)号：DE10339691B3
公开(公告)日：2005-04-07
申请号：DE10339691
申请日：2003-08-28
Applicant: INFINEON TECHNOLOGIES AG , EUPEC GMBH & CO KG
IPC: H01L29/06 , H01L29/861 , H01L29/868
Abstract: The power semiconductor component has 2 emitter zones (2,3) of opposite conductivity type separated by a base zone (4) with the same conductivity as one of the emitter zones and a weaker doping concentration, for providing a P/N junction (5) with the other emitter zone, which incorporates island zones (6) of opposite conductivity fully embedded in the emitter zone.
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公开(公告)号：DE10250609A1
公开(公告)日：2004-05-19
申请号：DE10250609
申请日：2002-10-30
Applicant: EUPEC GMBH & CO KG , INFINEON TECHNOLOGIES AG
Inventor： SCHULZE HANS-JOACHIM , KELLNER-WERDEHAUSEN UWE , NIEDERNOSTHEIDE FRANZ-JOSEF , BARTHELMESS REINER
Abstract: A thyristor component comprises four semiconductor zones (20,30,50,40) with oppositely doped first and second regions having an inclined transition zone at an edge. The fourth zone (40) contains oppositely doped third zones (50) and is interrupted in the edge region by part of the second zone which extends to the front. Independent claims are also included for the following: (a) a thyristor as above in which the dopant concentration in the first zone decreases towards the edge;and (b) a semiconductor element as above
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公开(公告)号：DE102008039742B4
公开(公告)日：2010-11-25
申请号：DE102008039742
申请日：2008-08-26
Applicant: INFINEON TECHNOLOGIES AG
Inventor： SCHULZE HANS-JOACHIM , NIEDERNOSTHEIDE FRANZ-JOSEF , KELLNER-WERDEHAUSEN UWE , SILBER DIETER , BARTHELMESS REINER , CHUKALURI ESWAR KUMAR
IPC: H01L29/74
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