公开(公告)号：DE102004044678A1

公开(公告)日：2006-03-16

申请号：DE102004044678

申请日：2004-09-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KUNDALGURKI SRIVATSA ,  SCHUPKE KRISTIN ,  MANGER DIRK ,  SCHLOESSER TILL ,  MOLL PETER

IPC: H01L21/8242

Abstract: In a method for fabricating a capacitor that includes an electrode structure (80), an auxiliary layer (40) is formed over a substrate (10). A recess (60), which determines the shape of the electrode structure (80), is etched into the auxiliary layer (40), and the electrode structure of the capacitor is formed in the recess. As an example, the auxiliary layer can be a semiconductor layer (40).

公开(公告)号：DE10321466A1

公开(公告)日：2004-12-16

申请号：DE10321466

申请日：2003-05-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SEIDL HARALD ,  MANGER DIRK ,  GOLDBACH MATTHIAS ,  BIRNER ALBERT ,  SLESAZECK STEFAN

IPC: H01L21/8242 ,  H01L27/108 ,  H01L29/94

Abstract: A trench storage capacitor includes a buried plate that is lengthened by a doped silicon layer to right over the collar insulating layer. The conductor layer of the trench storage capacitor is preferably applied to a "buried" collar insulating layer and masked with the aid of a protective layer fabricated by ALD. In an exemplary embodiment, the conductor layer is composed of amorphous silicon, which is used as an HSG layer in a lower trench region.

公开(公告)号：DE10224957A1

公开(公告)日：2004-01-08

申请号：DE10224957

申请日：2002-06-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MANGER DIRK

IPC: H01L23/532

Abstract: Metal structure is arranged in a recess of a dielectric (1) surrounding the structure. The recess is lined with a first barrier material (2). A trenched layer (4) of a second barrier material is arranged between the metal structure and a cap material (5) covering the metal structure. An independent claim is also included for a process for the production of the metal structure.

公开(公告)号：DE10219398A1

公开(公告)日：2003-11-20

申请号：DE10219398

申请日：2002-04-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOLL HANS-PETER ,  MANGER DIRK ,  SCHLOESSER TILL

IPC: H01L21/308 ,  H01L21/334 ,  H01L21/762 ,  H01L21/8242 ,  H01L21/76

Abstract: Production of a trench arrangement comprises forming trenches in a semiconductor substrate (1) by etching using a mask (15) having a first opening (28) and a second opening (29) corresponding to the depth of the trenches, and providing in the second opening above the substrate a region (5) made from a material having a reduced etching rate compared with the substrate.

公开(公告)号：DE10207131A1

公开(公告)日：2003-08-28

申请号：DE10207131

申请日：2002-02-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MANGER DIRK ,  GOLDBACH MATTHIAS

IPC: G03C5/00 ,  G03F1/00 ,  H01L21/033

Abstract: A hard mask is produced from spacer structures. The spacer structures are formed from a conformal deposition on elevated structures produced lithographically in a projection process. The conformal deposition is etched back laterally on the elevated structures resulting in the spacer structures. The elevated structures between the spacer structures are subsequently etched away, so that the spacer structures remain in an isolated fashion as sublithographic structures of a hard mask with a doubled structure density compared with that originally produced in lithographic projection. In a regularly disposed two-dimensional array of structures in the hard mask for forming trenches-for instance for trench capacitors-the method achieves a doubling of the structure density in the array. A further iteration step is formed by forming further spacer structures on the first and second spacer structures, thereby achieving an even higher increase in structure density in the hard mask.

公开(公告)号：DE10155023A1

公开(公告)日：2003-05-15

申请号：DE10155023

申请日：2001-11-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MANGER DIRK ,  SCHLOESSER TILL

IPC: H01L21/4763 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/76

公开(公告)号：DE10134432A1

公开(公告)日：2002-11-21

申请号：DE10134432

申请日：2001-07-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MANGER DIRK ,  MOLL PETER

IPC: G01K1/02 ,  G01K7/01 ,  G08C17/00 ,  H01L21/66 ,  H01L23/58

Abstract: The device has a first signal generator for generating a temperature-independent signal from an a.c. electromagnet field, a temperature-dependent impedance device for producing a characteristic temperature-dependent signal for the wafer from the first signal, a second signal generator for producing a temperature-dependent alternating field signal and a device for wireless transmission of the temperature-dependent alternating field signal. The device has a first signal generator (L1,C,C',G,SQ) for generating a temperature-independent signal (Uv) from an electromagnet alternating field (WF), a temperature-dependent impedance device (R1,R2) for producing a characteristic temperature-dependent signal (UT) for the wafer from the first signal, a second signal generator (FG) for producing a temperature-dependent alternating field signal (WS) from the temperature-dependent signal and a transmission device (Fl,ANT) for wireless transmission of the temperature-dependent alternating field signal as a temperature-dependent transmission signal (TS). AN Independent claim is also included for the following: a method of contactless in-situ detection of wafer temperature.