公开(公告)号：DE102004044678B4

公开(公告)日：2006-08-31

申请号：DE102004044678

申请日：2004-09-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KUNDALGURKI SRIVATSA ,  SCHUPKE KRISTIN ,  MANGER DIRK ,  SCHLOESSER TILL ,  MOLL PETER

IPC: H01L21/8242

Abstract: In a method for fabricating a capacitor that includes an electrode structure (80), an auxiliary layer (40) is formed over a substrate (10). A recess (60), which determines the shape of the electrode structure (80), is etched into the auxiliary layer (40), and the electrode structure of the capacitor is formed in the recess. As an example, the auxiliary layer can be a semiconductor layer (40).

公开(公告)号：DE10353269B3

公开(公告)日：2005-05-04

申请号：DE10353269

申请日：2003-11-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOLL HANS-PETER ,  HEINECK LARS ,  SEITZ MIHEL ,  KUNDALGURKI SRIVATSA

IPC: H01L21/334 ,  H01L21/8242

Abstract: The production of a trench capacitor with an insulation collar (sic) in a substrate, which is electrically connected to the substrate via a trenched (sic) contact, especially for a semiconductor storage cell, and a selection transistor involves the provision of a trench in the substrate using a hard mask, a capacitor dielectric, an Si oxide liner, formation of a liner mask from part of the liner, and provision of an upper liner from undoped poly-Si or amorphous Si.

公开(公告)号：DE102004063949A1

公开(公告)日：2006-06-08

申请号：DE102004063949

申请日：2004-09-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KUNDALGURKI SRIVATSA ,  SCHUPKE KRISTIN ,  MANGER DIRK ,  SCHLOESSER TILL ,  MOLL PETER

IPC: H01L21/8242

Abstract: In a method for fabricating a capacitor that includes an electrode structure (80), an auxiliary layer (40) is formed over a substrate (10). A recess (60), which determines the shape of the electrode structure (80), is etched into the auxiliary layer (40), and the electrode structure of the capacitor is formed in the recess. As an example, the auxiliary layer can be a semiconductor layer (40).

公开(公告)号：DE102004044678A1

公开(公告)日：2006-03-16

申请号：DE102004044678

申请日：2004-09-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KUNDALGURKI SRIVATSA ,  SCHUPKE KRISTIN ,  MANGER DIRK ,  SCHLOESSER TILL ,  MOLL PETER

IPC: H01L21/8242

Abstract: In a method for fabricating a capacitor that includes an electrode structure (80), an auxiliary layer (40) is formed over a substrate (10). A recess (60), which determines the shape of the electrode structure (80), is etched into the auxiliary layer (40), and the electrode structure of the capacitor is formed in the recess. As an example, the auxiliary layer can be a semiconductor layer (40).