Abstract:
PROBLEM TO BE SOLVED: To provide a coating composition yielding a coated film which has a uniform thickness and has an excellent hardness, crack resistance and CMP resistance and a low dielectric constant. SOLUTION: A film-forming composition contains, based on 100 pts.wt. silicon compounds (A) of formulae (1): R1aSi(OR2)4-a and (2): R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c, from 0.0005 to 0.05 pts.wt. metal chelated compound (B) of formula (3): R8eM(OR9)f-e wherein R1 is hydrogen, fluorine or a monovalent organic group; R2, R3, R4, R5 and R6 are each a monovalent organic group; a, b and c are each an integer of 0-2; R7 is an oxygen atom or a -(CH2)m- group; m is 1-6; d is 0 or 1; R8 is a chelating agent; M is a metal atom; R9 is a 2-5C alkyl group or a 6-20C aryl group; e is a valence number of the metal M; and f is integer of from 1 to e.
Abstract:
PROBLEM TO BE SOLVED: To obtain a film-forming composition which yields a coated from showing an excellent mechanical strength and crack resistance, shows an excellent long-term shelf stability of the solution and exerts a low dielectric constant and is therefore suitable as a material for interlayer insulating films for semiconductor elements, etc. SOLUTION: The film-forming composition contains (A) a hydrolytic condensate obtained by hydrolyzing and condensing at least one compound selected from the group consisting of (A-1) a compound of the formula: R1aSi(OR2)4-a, wherein R1 is a hydrogen atom, a fluorine atom or a monovalent organic group; R2 is a monovalent organic group; and a is an integer of 0-2 and (A-2) a compound of the formula: R3b(R4 O)3-bSi-(R7)d-Si(OR5)3-cR6c, wherein R3, R4, R5 and R6 are identical to or different from each other and are each a monovalent organic group; b and c are identical to or different from each other and are each 0-2; R7 is an oxygen atom or a group of the formula: -(CH2)n-; n is 1-6; and d is 0 or 1 in the presence of from 0.00001 to 0.001 mol organic acid against 1 mol alkoxyl group in the components (A-1) and (A-2) and from 0.8 to 2.5 mol water against 1 mol alkoxyl group in the components (A-1) and (A-2), and (B) an organic solvent.
Abstract:
PROBLEM TO BE SOLVED: To provide a membrane-forming composition excellent in coating uniformity, lowness in dielectric constant and leakage current, CPM resistance, preservation stability, etc., as interlayer insulating material e.g. in semiconductor elements. SOLUTION: This membrane-forming composition is produced by hydrolyzing at least one selected from a compound expressed by the formula R1aSi(OR2)4-a, wherein R1 is H, fluorine atom or a monovalent organic group; R2 is a monovalent organic group; and (a) is an integer of 0 to 2, and a compound expressed by the formula R3b(R4O)3-bSi-(R7)d-(OR5)3-cR6c, wherein R3 to R6 are each a monovalent organic group; (b) and (c) are each 0 to 2; R7 is oxygen atom or (CH2)n; (n) is 1 to 6; and (d) is 0 or 1 in the presence of a solvent expressed by the formula HOCHCH3CH2OR8, wherein R8 is a 1-4C alkyl group.
Abstract:
PROBLEM TO BE SOLVED: To obtain a composition which is excellent in uniformity of a coated film, dielectric characteristic, storage stability, O plasma ashing resistance, adhesion to an underlying layer and the like by including an alkoxysilane compound, a metal chelate compound, a propylene glycol monoalkyl ether and a β-diketone. SOLUTION: The composition comprises a hydrolyzate of a compound of the formula, R1nSi(OR2)4-n and/or its partial condensate, a metal chelate compound of the formula, R3tM(OR4)s-t, a propylene glycol monoalkyl ether and a β-diketone, in which it is preferred that the content of Na is 20 ppb or below, the content of β-diketone is not lower than 1 wt.%, and the content of an alcohol having a boiling point of 100 deg.C or below is not higher than 20 wt.%. In the formula, R1-2 represents 1-5C alkyl or 6-20C aryl; n is 0 to 2; R3 represents a chelating agent; M is a metal atom, preferably Ti, Zr or Al; R4 represents 2-5C alkyl or 6-20C aryl; s is a valence of M; and t is 1 to s. This composition is useful as a layer insulating film such as for semiconductor devices.
Abstract:
PROBLEM TO BE SOLVED: To provide a thermosetting resin composition excellent in storage stability as a solution, free from cracks in curing process, and capable of forming a cured article excellent in adhesive properties to various substrates, heat resistance, resistance to moist heat, electrical insulating properties, etc. SOLUTION: This resin composition consists of (A) a hydrolysate of a hydrolyzable organosilane compound and/or its partial condensate, (B) a polyamic acid having a carboxylic acid anhydride group and/or a polyimide having a carboxylic acid anhydride group, and (C) a chelate compound of a metal selected from a group of zirconium, titanium and aluminum and/or an alkoxide compound.
Abstract:
PROBLEM TO BE SOLVED: To provide a binder composition for a negative electrode, capable of providing a power storage device high in charge/discharge capacity and less in the degree of capacity deterioration due to the repetition of charge/discharge cycles.SOLUTION: The binder composition for a negative electrode is a binder composition for a negative electrode of a power storage device, containing at least a polymer (A), water (B) and a liquid medium (C). The polymer (A) is at least one selected from the group consisting of a polyamic acid and an imidized polymer thereof, the polyamic acid being obtained by the reaction between (a) mol of tetracarboxylic dianhydride and b mol of diamine while a ratio a/b is more than 0.95 and 0.99 or less.
Abstract:
PROBLEM TO BE SOLVED: To provide a carbon nanotube dispersion having excellent dispersibility and coating characteristics, and also to provide its production method. SOLUTION: The method for producing a composition containing the carbon nanotubes includes injecting a slurry composition containing carbon nanotubes and a dispersion medium from a nozzle under pressure and making injection flows colliding to each other or colliding to a wall. Also, the composition containing the carbon nanotubes is a carbon nanotube dispersion, which contains a dispersion medium and carbon nanotubes having the average length of 0.4-5,000 nm calculated from values measured by SEM image analysis and the coefficient of variation (CV value) of the average length of at most 40%. The composition can be used to solve the problem. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing water-based dispersing composition capable of keeping in-plane uniformity of polishing speed and inhibiting variation in in-plane flatness of a polished surface during a process of chemical-mechanical-polishing a barrier metal layer provided on a substrate for use of a display device, a manufacturing method of the chemical mechanical polishing water-based dispersing composition, and a chemical mechanical polishing method using the dispersing composition. SOLUTION: The inventors have found that the problem can be solved by means of the chemical mechanical polishing water-based dispersing composition for polishing the barrier metal layer provided on the substrate for use of the display device, which contains (A) abrasive grains, (B) an organic acid and (C) one or more atoms selected from a group consisting of Ta, Ti and Ru, wherein a ratio Rmax/Rmin of a longer diameter Rmax and a shorter diameter of the (A) abrasive grain ranges from 1.0 to 1.5 and (C) element ranges from 1.0×10 2 to 1.0×10 4 ppm. COPYRIGHT: (C)2010,JPO&INPIT