公开(公告)号：EP2601675A2

公开(公告)日：2013-06-12

申请号：EP11815104.2

申请日：2011-07-28

Applicant: KLA-Tencor Corporation

Inventor： KANDEL, Daniel ,  LEVINSKI, Vladimir ,  COHEN, Guy

IPC: H01L21/027

CPC classification number: G03F7/70633 ,  G03F7/70683

Abstract: A multi-layer overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements, wherein the target structures are configured to share a common center of symmetry upon alignment of the target structures, each target structure being invariant to N degree rotation about the common center of symmetry, wherein N is equal to or greater than 180 degrees, wherein each of the two or more pattern elements has an individual center of symmetry, wherein each of the two or more pattern elements of each target structure is invariant to M degree rotation about the individual center of symmetry, wherein M is equal to or greater than 180 degrees.

公开(公告)号：WO2016172122A1

公开(公告)日：2016-10-27

申请号：PCT/US2016/028314

申请日：2016-04-19

Applicant: KLA-TENCOR CORPORATION

Inventor： LEE, Myungjun ,  SMITH, Mark D. ,  ADEL, Michael E. ,  AMIT, Eran ,  KANDEL, Daniel

IPC: H01L21/66

CPC classification number: G01J9/00 ,  G03F7/705 ,  G03F7/70683 ,  H01L22/30

Abstract: Metrology methods, modules and targets are provided, for measuring tilted device designs. The methods analyze and optimize target design with respect to the relation of the Zernike sensitivity of pattern placement errors (PPEs) between target candidates and device designs. Monte Carlo methods may be applied to enhance the robustness of the selected target candidates to variation in lens aberration and/or in device designs. Moreover, considerations are provided for modifying target parameters judiciously with respect to the Zernike sensitivities to improve metrology measurement quality and reduce inaccuracies.

Abstract translation: 提供了测量方法，模块和目标，用于测量倾斜的设备设计。 该方法针对目标候选者和设备设计之间的图案布局错误（PPEs）的泽尔尼克敏感度的关系，分析和优化目标设计。 可以应用蒙特卡洛方法来增强所选择的目标候选者对透镜像差和/或装置设计中的变化的鲁棒性。 此外，还提供了考虑到明确地修改Zernike敏感度的目标参数，以提高计量测量质量并减少不准确度。

公开(公告)号：WO2016086056A1

公开(公告)日：2016-06-02

申请号：PCT/US2015/062523

申请日：2015-11-24

Applicant: KLA-TENCOR CORPORATION

Inventor： MARCIANO, Tal ,  BRINGOLTZ, Barak ,  GUREVICH, Evgeni ,  ADAM, Ido ,  LINDENFELD, Za'ev ,  ZHAO, Zeng ,  FELER, Yoel ,  KANDEL, Daniel ,  CARMEL, Nadav ,  MANASSEN, Amnon ,  AMIR, Nuriel ,  KAMINSKY, Oded ,  YAZIV, Tal ,  ZAHARAN, Ofer ,  COOPER, Moshe ,  SULIMARSKI, Roee ,  LEVIANT, Tom ,  SELLA, Noga ,  EFRATY, Boris ,  SALTOUN, Lilach ,  HANDELMAN, Amir ,  ASHWAL, Eltsafon ,  BACHAR, Ohad

IPC: H01L21/66

CPC classification number: G03F9/7003 ,  G03F7/70633 ,  H01L22/12 ,  H01L22/20

Abstract: Methods are provided of deriving a partially continuous dependency of metrology metric(s) on recipe parameter(s), analyzing the derived dependency, determining a metrology recipe according to the analysis, and conducting metrology measurement(s) according to the determined recipe. The dependency may be analyzed in form of a landscape such as a sensitivity landscape in which regions of low sensitivity and/or points or contours of low or zero inaccuracy are detected, analytically, numerically or experimentally, and used to configure parameters of measurement, hardware and targets to achieve high measurement accuracy. Process variation is analyzed in terms of its effects on the sensitivity landscape, and these effects are used to characterize the process variation further, to optimize the measurements and make the metrology both more robust to inaccuracy sources and more flexible with respect to different targets on the wafer and available measurement conditions.

Abstract translation: 提供了一种方法，用于导出计量度量对配方参数的部分连续依赖性，分析衍生依赖性，根据分析确定计量配方，并根据确定的配方进行计量测量。 依赖性可以以景观的形式进行分析，例如灵敏度景观，其中检测到低分辨率或零误差的低灵敏度和/或点或等值线的区域，分析，数字或实验，并用于配置测量参数，硬件 并达到高测量精度。 根据其对灵敏度景观的影响分析过程变化，并且这些效应用于进一步表征过程变化，优化测量结果，使计量学对于不准确性来源更加鲁棒，并且对于不同的目标更灵活 晶圆和可用的测量条件。

公开(公告)号：WO2014039689A1

公开(公告)日：2014-03-13

申请号：PCT/US2013/058278

申请日：2013-09-05

Applicant: KLA-TENCOR CORPORATION

Inventor： AMIR, Nuriel ,  CHOI, DongSub ,  ITZKOVICH, Tal ,  KANDEL, Daniel

IPC: H01L21/027

CPC classification number: H01L23/544 ,  G03F7/70633 ,  G03F7/70683 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Aspects of the present disclosure describe a target for use in measuring a relative position between two substantially coplanar layers of a device. The target includes periodic structures in first and second layers. Differences in relative position of the first and the second layers between the first and second periodic structures and the respective device-like structure can be measured to correct the relative position of the first and the second layers between the first and second periodic structures. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract translation: 本公开的方面描述了用于测量设备的两个基本上共面的层之间的相对位置的目标。 目标包括第一层和第二层中的周期性结构。 可以测量第一和第二周期结构之间的第一和第二层的相对位置与相应的器件状结构之间的差异，以校正第一和第二周期结构之间的第一和第二层的相对位置。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

公开(公告)号：WO2013025333A1

公开(公告)日：2013-02-21

申请号：PCT/US2012/048807

申请日：2012-07-30

Applicant: KLA-TENCOR CORPORATION ,  MANASSEN, Amnon ,  KANDEL, Daniel ,  BARUCH, Moshe ,  LEVINSKI, Vladimir ,  SAPIENS, Noam ,  SELIGSON, Joel L. ,  HILL, Andy ,  BACHAR, Ohad ,  NEGRI, Daria ,  ZAHARAN, Ofer

Inventor： MANASSEN, Amnon ,  KANDEL, Daniel ,  BARUCH, Moshe ,  LEVINSKI, Vladimir ,  SAPIENS, Noam ,  SELIGSON, Joel L. ,  HILL, Andy ,  BACHAR, Ohad ,  NEGRI, Daria ,  ZAHARAN, Ofer

IPC: H01L21/66

CPC classification number: G03F7/70633

Abstract: The present invention may include measuring a first phase distribution across a pupil plane of a portion of illumination reflected from a first overlay target of a semiconductor wafer, wherein the first overlay target is fabricated to have a first intentional overlay, measuring a second phase distribution across the pupil plane of a portion of illumination reflected from a second overlay target, wherein the second overlay target is fabricated to have a second intentional overlay in a direction opposite to and having the same magnitude as the first intentional overlay, determining a first phase tilt associated with a sum of the first and second phase distributions, determining a second phase tilt associated with a difference between the first and second phase distributions, calibrating a set of phase tilt data, and determining a test overlay value associated with the first and second overlay target.

Abstract translation: 本发明可以包括测量跨越从半导体晶片的第一覆盖目标反射的照明部分的光瞳平面的第一相分布，其中第一覆盖目标被制造为具有第一有意覆盖，测量第二相位分布 从第二覆盖目标反射的照明部分的光瞳平面，其中第二覆盖目标被制造为具有与第一有意重叠相反并具有相同幅度的方向的第二有意覆盖，确定相关联的第一相位倾斜 具有第一和第二相位分布的总和，确定与第一和第二相位分布之间的差相关联的第二相位倾斜，校准一组相位倾斜数据，以及确定与第一和第二覆盖目标相关联的测试覆盖值 。

公开(公告)号：WO2012138758A1

公开(公告)日：2012-10-11

申请号：PCT/US2012/032169

申请日：2012-04-04

Applicant: KLA-TENCOR CORPORATION ,  KANDEL, Daniel ,  COHEN, Guy ,  KLEIN, Dana ,  LEVINSKI, Vladimir ,  SAPIENS, Noam ,  SHULMAN, Alex ,  KAMENETSKY, Vladimir ,  AMIT, Eran ,  VAKSHTEIN, Irina

Inventor： KANDEL, Daniel ,  COHEN, Guy ,  KLEIN, Dana ,  LEVINSKI, Vladimir ,  SAPIENS, Noam ,  SHULMAN, Alex ,  KAMENETSKY, Vladimir ,  AMIT, Eran ,  VAKSHTEIN, Irina

IPC: G01N37/00

CPC classification number: G03F7/70633 ,  G01N2223/6116

Abstract: The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.

Abstract translation: 本发明可以包括从分布在许多晶片的晶片的一个或多个场上的多个测量目标获取多个覆盖度量测量信号，为多个覆盖度量测量信号中的每一个确定多个重叠估计 使用多个覆盖算法，生成多个覆盖估计分布，以及利用所生成的多个覆盖估计分布生成第一多个质量度量，其中每个质量度量对应于所生成的多个覆盖估计分布的一个覆盖估计分布 每个质量度量是对应的生成的重叠估计分布的宽度的函数，每个质量度量还是来自相关度量目标的覆盖度量测量信号中存在的不对称的函数。

公开(公告)号：WO2012018673A2

公开(公告)日：2012-02-09

申请号：PCT/US2011/045778

申请日：2011-07-28

Applicant: KLA-TENCOR CORPORATION ,  KANDEL, Daniel ,  LEVINSKI, Vladimir ,  COHEN, Guy

Inventor： KANDEL, Daniel ,  LEVINSKI, Vladimir ,  COHEN, Guy

IPC: H01L21/027

CPC classification number: G03F7/70633 ,  G03F7/70683

Abstract: A multi-layer overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements, wherein the target structures are configured to share a common center of symmetry upon alignment of the target structures, each target structure being invariant to N degree rotation about the common center of symmetry, wherein N is equal to or greater than 180 degrees, wherein each of the two or more pattern elements has an individual center of symmetry, wherein each of the two or more pattern elements of each target structure is invariant to M degree rotation about the individual center of symmetry, wherein M is equal to or greater than 180 degrees.

Abstract translation: 公开了用于基于成像的度量衡中的多层覆盖目标。 覆盖目标包括多个包括三个或更多个目标结构的目标结构，每个目标结构包括一组两个或更多个模式元素，其中目标结构被配置为在目标结构对齐时共享对称的共同中心，每个 目标结构围绕所述公共对称中心不变为N度旋转，其中N等于或大于180度，其中所述两个或更多个图案元件中的每一个具有单独的对称中心，其中所述两个或更多个图案中的每一个 每个目标结构的元素对于围绕单个对称中心的M度旋转是不变的，其中M等于或大于180度。

公开(公告)号：EP3916758A1

公开(公告)日：2021-12-01

申请号：EP21186660.3

申请日：2011-07-28

Applicant: Kla-Tencor Corporation

Inventor： KANDEL, Daniel ,  LEVINSKI, Vladimir ,  Cohen, Guy

IPC: H01L21/027

Abstract: A multi-layer overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements, wherein the target structures are configured to share a common center of symmetry upon alignment of the target structures, each target structure being invariant to N degree rotation about the common center of symmetry, wherein N is equal to or greater than 180 degrees, wherein each of the two or more pattern elements has an individual center of symmetry, wherein each of the two or more pattern elements of each target structure is invariant to M degree rotation about the individual center of symmetry, wherein M is equal to or greater than 180 degrees.

公开(公告)号：EP3779598A3

公开(公告)日：2021-04-14

申请号：EP20177915.4

申请日：2012-04-04

Applicant: Kla-Tencor Corporation

Inventor： KANDEL, Daniel ,  COHEN, Guy ,  KLEIN, Dana ,  LEVINSKI, Vladimir ,  SAPIENS, Noam ,  SHULMAN, Alex ,  KAMENETSKY, Vladimir ,  AMIT, Eran ,  VAKSHTEIN, Irina

IPC: G03F7/20

Abstract: The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.

公开(公告)号：EP2386114B1

公开(公告)日：2018-10-31

申请号：EP10729404.3

申请日：2010-01-04

Applicant: KLA-Tencor Corporation

Inventor： ADEL, Michael E. ,  MANASSEN, Amnon ,  KANDEL, Daniel

IPC: G03F7/20 ,  H01L21/66

CPC classification number: G03F7/70683 ,  G03F7/705 ,  G03F7/70633 ,  H01L22/12

Abstract: A metrology target design may be optimized using inputs including metrology target design information, substrate information, process information, and metrology system information. Acquisition of a metrology signal with a metrology system may be modeled using the inputs to generate one or more optical characteristics of the metrology target. A metrology algorithm may be applied to the characteristics to determine a predicted accuracy and precision of measurements of the metrology target made by the metrology system. Part of the information relating to the metrology target design may be modified and the signal modeling and metrology algorithm may be repeated to optimize the accuracy and precision of the one or more measurements. The metrology target design may be displayed or stored after the accuracy and precision are optimized.