公开(公告)号：JPH1070082A

公开(公告)日：1998-03-10

申请号：JP24407996

申请日：1996-08-27

Applicant: SONY CORP

Inventor： YANASHIMA KATSUNORI ,  ASAZUMA YASUNORI ,  IKEDA MASAO

IPC: H01L21/285 ,  H01L21/203 ,  H01L21/22 ,  H01L21/223 ,  H01L21/28 ,  H01L33/32 ,  H01L33/40 ,  H01S5/00

Abstract: PROBLEM TO BE SOLVED: To provide method of forming a P-type nitride based III-V compound semiconductor layer which can bring an electrode into ohmic contact of low resistance with a P-type nitride based III-V compound semiconductor layer, while restraining generation of surface roughness, cracks, and deterioration of crystallinity of the semiconductor layer. SOLUTION: After a P-type nitride based III-V compound semiconductor layer, e.g. P-type GaN layer 3 is grown by an organic metal chemical vapor deposition method or the like, group II elements such as Mg and Zn are diffused on the surface of the layer 3 by a vapor diffusion method or a solid diffusion method, and a P type diffusion layer 4 is formed. The diffusion of group II elements is performed at, e.g. 500-700 deg.C. Thereby an electrode can be brought into ohmic contact of low resistance with the P-type nitride based III-V compound semiconductor layer, while restraining generation of surface roughness, cracks, and deterioration of crystallinity of the semiconductor layer.

公开(公告)号：JP2013168393A

公开(公告)日：2013-08-29

申请号：JP2012029042

申请日：2012-02-14

Applicant: Sony Corp ,  ソニー株式会社 ,  Sumitomo Electric Ind Ltd ,  住友電気工業株式会社

Inventor： TASAI KUNIHIKO ,  NAKAJIMA HIROSHI ,  KAZETAGAWA MUNEYUKI ,  YANASHIMA KATSUNORI ,  SHIOYA YOHEI ,  KUMANO TETSUYA ,  KYONO TAKASHI

IPC: H01S5/343 ,  H01S5/34

CPC classification number: H01S5/3013 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0035 ,  H01S5/2031 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34333

Abstract: PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor laser element using a semipolar substrate, in which voltage reduction at the time of energization is achieved, resulting in excellent reliability.SOLUTION: A nitride-based semiconductor laser element comprises: a first clad layer composed of InAlGaN (x1>0, y1>0) of a first conductivity type, which is formed on a semipolar surface of a semiconductor substrate; a luminescent layer formed on the first clad layer; and a second clad layer composed of InAlGaN (0≤x2≤0.02, 0.03≤y2≤0.07) of a second conductivity type, which is formed on the luminescent layer.

Abstract translation: 要解决的问题：提供一种使用半导体基板的氮化物系半导体激光元件，其中实现通电时的电压降低，导致优异的可靠性。解决方案：氮化物基半导体激光元件包括：第一包层 由形成在半导体衬底的半极性表面上的第一导电类型的InAlGaN（x1> 0，y1> 0）组成的层; 形成在所述第一包层上的发光层; 以及形成在发光层上的由第二导电类型的InAlGaN（0≤x2≤0.02,0.03≤y2≤0.07）组成的第二包层。

公开(公告)号：JP2013046039A

公开(公告)日：2013-03-04

申请号：JP2011185196

申请日：2011-08-26

Applicant: Sumitomo Electric Ind Ltd ,  住友電気工業株式会社 ,  Sony Corp ,  ソニー株式会社

Inventor： SUMITOMO TAKAMICHI ,  KYONO TAKASHI ,  UENO MASANORI ,  YOSHIZUMI YUSUKE ,  SHIOYA YOHEI ,  ADACHI MASAHIRO ,  TAKAGI SHINPEI ,  YANASHIMA KATSUNORI

IPC: H01S5/343

CPC classification number: H01S5/0425 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34333

Abstract: PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor laser element having a structure capable of reducing malfunction due to Catastrophic Optical Damage (COD) and reducing deterioration in heat dissipation capability.SOLUTION: A group III semiconductor laser element 11 comprises: first and second torn faces 27, 29 serving as a laser resonator and crossing an m-n plane, the torn faces 27, 29 being different from cleavage planes such as c-plane, m-plane and a-plane; a laser waveguide extending in a direction of a cross line of the m-n plane and a semipolar plane 17a; a semiconductor region 19 including first through third regions 19b-19d extending in a direction of a waveguide vector LGV; an insulation film 31 having an opening 31a located on a ridge structure of the third region 19d in the semiconductor region 19; and an electrode 15 including a pad electrode 18 having first through third electrode parts 18b-18d provided on the first through the third regions 19b-19d in the semiconductor region 19, respectively. The first electrode part 18b includes an arm part 18b_ARM1 reaching an edge of the torn face 27.

Abstract translation: 要解决的问题：提供具有能够减少由于灾难性光学损伤（COD）导致的故障并减少散热能力劣化的结构的III族氮化物半导体激光元件。 解决方案：III族半导体激光器元件11包括：用作激光谐振器并与mn平面交叉的第一和第二撕裂面27,29，撕裂面27,29不同于诸如c面的解理面， 平面和平面; 在m-n平面和半极性面17a的交叉方向上延伸的激光波导; 包括在波导矢量LGV的方向上延伸的第一至第三区域19b-19d的半导体区域19; 在半导体区域19中具有位于第三区域19d的脊结构上的开口31a的绝缘膜31; 以及电极15，其包括分别设置在半导体区域19中的第一至第三区域19b-19d上的第一至第三电极部分18b-18d的焊盘电极18。 第一电极部分18b包括到达撕裂面27的边缘的臂部分18b_ARM1。版权所有：（C）2013，JPO＆INPIT

公开(公告)号：JP2012174868A

公开(公告)日：2012-09-10

申请号：JP2011034940

申请日：2011-02-21

Applicant: Sumitomo Electric Ind Ltd ,  Sony Corp ,  ソニー株式会社 ,  住友電気工業株式会社

Inventor： ADACHI MASAHIRO ,  KATAYAMA KOJI ,  NAKANISHI HIROMI ,  YANASHIMA KATSUNORI

IPC: H01S5/028 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a laser diode in which leakage of current can be limited even when it is mounted by junction-down bonding.SOLUTION: A laser diode 10 comprises a semiconductor laminate structure 14 provided on the principal surface 12a of a semiconductor substrate 12 and including an optical resonator extending along the principal surface 12a, and an anode electrode 16 provided on the semiconductor laminate structure 14. Dielectric films 62, 64 are formed on a pair of side surfaces 14a, 14b of the semiconductor laminate structure 14 including a pair of end faces of the optical resonator, respectively. Upper edges 62c, 64c of the dielectric films 62, 64 in the lamination direction of the semiconductor laminate structure 14 extend across the anode electrode 16, and the average roughness of the upper edges 62c, 64c is 0.1-0.5 μm.

Abstract translation: 要解决的问题：提供一种激光二极管，即使在通过结合接合安装时也能够限制电流泄漏。 解决方案：激光二极管10包括设置在半导体衬底12的主表面12a上的半导体叠层结构14，其包括沿着主表面12a延伸的光谐振器和设置在半导体叠层结构14上的阳极电极16 电介质膜62,64分别形成在包括光谐振器的一对端面的半导体叠层结构14的一对侧面14a，14b上。 电介质膜62,64在半导体叠层结构体14的层叠方向上的上缘62c，64c延伸穿过阳极电极16，上边缘62c，64c的平均粗糙度为0.1-0.5μm。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012060022A

公开(公告)日：2012-03-22

申请号：JP2010203472

申请日：2010-09-10

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OMAE AKIRA ,  MAEDA YUUKI ,  YANASHIMA KATSUNORI

IPC: H01L33/22 ,  H01L33/32

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a GaN-based semiconductor light-emitting element that can inhibit lowering in a light extraction efficiency by etching and to provide a semiconductor light-emitting element manufactured by the method.SOLUTION: The semiconductor light-emitting element manufacturing method comprises the steps of: forming a plurality of island-shaped mask layers 150 of a top face of a first upper clad layer 14A; selectively forming a second upper clad layer 14B on the top face of the first upper clad layer 14A at a non-forming region of the plurality of island-shaped mask layers 150 by crystal growth; and filling each of the mask layers 150 by thickly forming the second upper clad layer 14B.

Abstract translation: 解决的问题：提供可以通过蚀刻抑制光提取效率降低的GaN基半导体发光元件的制造方法，并提供通过该方法制造的半导体发光元件。 解决方案：半导体发光元件制造方法包括以下步骤：形成第一上包层14A的顶面的多个岛状掩模层150; 通过晶体生长在多个岛状掩模层150的非形成区域中选择性地在第一上部包覆层14A的顶面上形成第二上部包层14B; 并通过厚度形成第二上包层14B填充每个掩模层150。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2009188085A

公开(公告)日：2009-08-20

申请号：JP2008024883

申请日：2008-02-05

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YOKOZEKI MIKIHIRO ,  SHIOMI HARUNORI ,  HATADA IZUHO ,  YANASHIMA KATSUNORI

IPC: H01L21/36 ,  C23C14/06 ,  C23C16/30 ,  C30B23/08 ,  C30B25/02 ,  C30B29/22 ,  H01L21/363 ,  H01L21/365 ,  H01L33/28

CPC classification number: H01L21/02565 ,  H01L21/02403 ,  H01L21/02483 ,  H01L21/02485 ,  H01L21/02568

Abstract: PROBLEM TO BE SOLVED: To provide a method for growing a single-crystal oxychalcogenide system thin film, capable of making grown a proper quality single-crystal oxychalcogenide system thin film having a precipitous interface between thin films. SOLUTION: An amorphous oxychalcogenide system thin film 102 is grown on a substrate 101 comprising a YSZ substrate, a MgO substrate, or the like, by the pulse laser deposition method and the sputtering method, and a single-crystal oxychalcogenide system thin film 103 is formed by crystallizing the amorphous oxychalcogenide system thin film 102 by the reactive solid-phase epitaxial growth method. A crystal oxychalcogenide thin film 104 is grown on the single-crystal oxychalcogenide system thin film 103 by the solution vaporization CVD method from an early phase of the epitaxial growth. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种生长单晶氧化硫系体系薄膜的方法，其能够生长具有在薄膜之间具有沉淀界面的合适质量的单晶氧化硫系体系薄膜。 解决方案：通过脉冲激光沉积法和溅射法，在包含YSZ衬底，MgO衬底等的衬底101上生长无定形氧化硫系体系薄膜102，并且将单晶氧化硫化物体系薄 膜103通过用反应性固相外延生长法使无定形氧化硫系体系薄膜102结晶而形成。 从外延生长的早期阶段，通过溶液蒸发CVD法在单晶氧化硫系体系薄膜103上生长氧化硫化物氧化物薄膜104。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008198614A

公开(公告)日：2008-08-28

申请号：JP2008055879

申请日：2008-03-06

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YASUDA TOSHIKAZU ,  OMAE AKIRA ,  KAZETAGAWA MUNEYUKI ,  HATADA IZUHO ,  MEMESAWA SATOHIKO ,  YANASHIMA KATSUNORI ,  NARUI HIRONOBU

IPC: H05B33/14 ,  B82B1/00 ,  B82B3/00 ,  C25D11/32 ,  H05B33/10

Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting element capable of obtaining a light emission wavelength having large light emission intensity, and furthermore having a narrow half-value width. SOLUTION: The light-emitting element 30 is equipped with a light-emitting layer 40 formed on a substrate 31. The light-emitting layer 40 is composed of quantum dots 41 as well as rare earth atoms 43 which is adhered to a surface of the quantum dots 41, and/or contained interior of the quantum dots 41. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种能够获得具有大的发光强度的发光波长的发光元件，并且还具有窄的半值宽度。

解决方案：发光元件30配备有形成在基板31上的发光层40.发光层40由量子点41以及稀土原子43组成，稀土原子43被粘附到 量子点41的表面和/或包含量子点41的内部。版权所有：（C）2008，JPO＆INPIT

公开(公告)号：JP2007277604A

公开(公告)日：2007-10-25

申请号：JP2006102752

申请日：2006-04-04

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HATADA IZUHO ,  YANASHIMA KATSUNORI

IPC: C23C14/34

Abstract: PROBLEM TO BE SOLVED: To provide a facing target type sputtering apparatus which can easily control the composition of a thin film to be formed and form a desired functional thin film. SOLUTION: The facing target type sputtering apparatus 10 has a sputtering source comprising a plurality of facing target units 3a, 3b and 3c, has a substrate 11 arranged above the facing target units 3a, 3b and 3c, and makes the facing target units 3a, 3b and 3c simultaneously operate to form the thin film on the substrate 11 through sputtering the targets. The facing target units 3a, 3b and 3c have different compositions from each other. The apparatus 10 controls a composition ratio of the thin film by adjusting an array pattern of each of the facing target units 3a, 3b and 3c with respect to the substrate 11 and a voltage applied to each of the facing target units 3a, 3b and 3c. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种能够容易地控制要形成的薄膜的组成并形成期望的功能性薄膜的面向目标的溅射装置。 解决方案：面向目标型溅射装置10具有包括多个面向目标单元3a，3b和3c的溅射源，具有布置在面对目标单元3a，3b和3c上方的基板11，并且使面对目标 单元3a，3b和3c同时操作以通过溅射靶在衬底11上形成薄膜。 面对目标单元3a，3b和3c具有彼此不同的组成。 设备10通过相对于基板11调整每个面对目标单元3a，3b和3c的阵列图案以及施加到每个面向目标单元3a，3b和3c的电压来控制薄膜的组成比 。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006339534A

公开(公告)日：2006-12-14

申请号：JP2005164757

申请日：2005-06-03

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YOKOZEKI MIKIHIRO ,  SHIOMI HARUNORI ,  AMI TAKAAKI ,  ARIMOCHI SUKEYUKI ,  YANASHIMA KATSUNORI

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32

Abstract: PROBLEM TO BE SOLVED: To provide a light emitting diode having extremely high light emitting efficiency by considerably improving extraction efficiency of light while sufficiently acquiring the volume of an active layer, and to provide a method for manufacturing it. SOLUTION: An n-type GaN layer 12, an n-type GaInN buffer layer 14, an n-type GaN layer 15, an active layer 16 of an MQW structure comprising an InGaN well layer and a GaN barrier layer, a p-type AlGaN layer 17, and a p-type GaN layer 18 are epitaxially grown in this order on a sapphire substrate 11 whose one principal surface is made uneven, to form a light emitting diode structure. At this time of growth, a six-sided pyramid-like pit 19 is formed with a part of a threading dislocation 13 formed at an assembling part formed at an upper part of a protruding part 11b of the sapphire substrate 11, as a starting point. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 解决的问题：通过大幅提高光的提取效率，同时充分获得活性层的体积，提供具有极高发光效率的发光二极管，并提供其制造方法。 解决方案：n型GaN层12，n型GaInN缓冲层14，n型GaN层15，包括InGaN阱层和GaN势垒层的MQW结构的有源层16， p型AlGaN层17和p型GaN层18依次外延生长在蓝宝石衬底11上，该蓝宝石衬底11的一个主表面是不均匀的，以形成发光二极管结构。 在这个生长时刻，形成六边形金字塔状的凹坑19，其形成有形成在形成于蓝宝石基板11的突出部分11b的上部的组装部分处的穿透位错13的一部分，作为起点 。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006324331A

公开(公告)日：2006-11-30

申请号：JP2005144160

申请日：2005-05-17

Applicant: SONY CORP

Inventor： SHIOMI HARUNORI ,  OMAE AKIRA ,  AMI TAKAAKI ,  MIYAJIMA TAKAO ,  YANASHIMA KATSUNORI

IPC: H01L33/08 ,  H01L33/22 ,  H01L33/32

Abstract: PROBLEM TO BE SOLVED: To provide a light emitting diode and its manufacturing method made very high in light emission efficiency and made very less in variation in characteristics by improving the extraction efficiency of light, and sharply improving crystallinity of the whole of the nitride-based group III-V compound semiconductor layers constituting a light emitting diode. SOLUTION: After a GaN layer 12 is grown on a saphire substrate 11 subjected to irregularity processing, the GaN layer 12 is left behind only at a bottom of a recess 11a by etching back. A GaN layer 13 is grown on the recess 11a taking the GaN layer 12 as a seed crystal after passing a state where it exhibits a triangle in a cross sectional shape, taking a bottom surface of the recess as a bottom side, to embed the recess 11a. Thereafter, transversal growth is implemented from the GaN layer 13. Further, a GaN-based semiconductor layer including an active layer is grown to form a light emitting diode structure on the GaN layer 13. Using the GaN-based light emitting diode, a light emitting diode backlight or the like is manufactured. COPYRIGHT: (C)2007,JPO&INPIT