公开(公告)号：EP1879034A1

公开(公告)日：2008-01-16

申请号：EP06425485.7

申请日：2006-07-14

Applicant: STMicroelectronics S.r.l.

Inventor： Merassi, Angelo ,  Zerbini, Sarah ,  Lasalandra, Ernesto ,  Vigna, Benedetto

IPC: G01P15/08 ,  G01P15/125 ,  G11B19/04

CPC classification number: G11B19/04 ,  G01P15/0891 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/082

Abstract: Described herein is an inertial sensor (1) provided with a detection structure (9, 19) sensitive to a first, a second and a third component of acceleration (a x , a y , a z ) along respective directions of detection (x, y, z), and generating respective electrical quantities as a function of said components of acceleration. The detection structure (9, 19) supplies at output a resultant electrical quantity (C) obtained as combination of said electrical quantities, and correlated to the value of a resultant acceleration (a) acting on the inertial sensor (1), given by a vector sum of the components of acceleration (a x , a y , a z ) . In particular, the detection structure (9, 19) is of a microelectromechanical type, and comprises a mobile portion (2, 12) made of semiconductor material forming with a fixed portion (8, 18) a first, a second and a third detection capacitor, and an electrical-interconnection portion (10, 20), connecting the detection capacitors in parallel; the resultant electrical quantity (C) being the capacitance obtained from said connection in parallel.

Abstract translation: 这里描述的是具有对沿着检测方向（x，y，z）的加速度（ax，ay，az）的第一，第二和第三分量敏感的检测结构（9,19）的惯性传感器（1） ），并且产生作为所述加速度分量的函数的相应的电量。 检测结构（9,19）在输出端提供作为所述电量的组合获得的合成电量（C），并与作用在惯性传感器（1）上的合成加速度（a）的值相关，由 加速度分量（ax，ay，az）的矢量和。 特别地，检测结构（9,19）是微机电类型的，并且包括由形成有固定部分（8,18）的半导体材料制成的可移动部分（2,12），第一，第二和第三检测 电容器和电连接部分（10,20），并联连接检测电容器; 所得电量（C）是从所述连接并联获得的电容。

公开(公告)号：EP0996157B1

公开(公告)日：2005-08-03

申请号：EP98830629.6

申请日：1998-10-21

Applicant: STMicroelectronics S.r.l.

Inventor： Vigna, Benedetto ,  Mastromatteo, Ubaldo

IPC: H01L23/522 ,  H01L23/482 ,  H01L21/60

CPC classification number: H01L23/4821 ,  H01L23/5221 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1031965B1

公开(公告)日：2005-04-27

申请号：EP99830094.1

申请日：1999-02-23

Applicant: STMicroelectronics S.r.l.

Inventor： Vigna, Benedetto

IPC: G11B5/48

CPC classification number: G11B5/484 ,  Y10S977/725

公开(公告)号：EP0822398B1

公开(公告)日：2003-04-23

申请号：EP96830435.2

申请日：1996-07-31

Applicant: STMicroelectronics S.r.l.

Inventor： Vigna, Benedetto ,  Ferrari, Paolo ,  Villa, Flavio

IPC: G01L9/06

CPC classification number: G01L9/0042 ,  G01L9/0055

公开(公告)号：EP0828160B1

公开(公告)日：2001-12-05

申请号：EP96830464.2

申请日：1996-09-10

Applicant: STMicroelectronics S.r.l.

Inventor： Vigna, Benedetto ,  Ferrari, Paolo ,  Mastromatteo, Ubaldo

IPC: G01P1/00 ,  G01P15/11

CPC classification number: G01P15/11

公开(公告)号：EP1122721A1

公开(公告)日：2001-08-08

申请号：EP00830076.6

申请日：2000-02-02

Applicant: STMicroelectronics S.r.l.

Inventor： Vigna, Benedetto ,  Sassolini, Simone ,  Ratti, Francesco

IPC: G11B5/55

CPC classification number: G11B5/5552

Abstract: The microstructure (77), of semiconductor material, includes a micromotor (10) and an encapsulation structure (81). The micromotor (10) is externally delimited by a first and a second faces (36, 37), opposed to one another, and by a side delimitation trench (58). The encapsulation structure (81) surrounds the micromotor (10) and has a bottom portion (29a, 29b) facing the second face (37) of the micromotor, and an outer lateral portion (82) facing the side delimitation trench (58). An outer separation trench (30b) extends through the bottom portion (29a, 29b) of the encapsulation structure (81), separates a mobile region (29b) from the external side portion (82), and defines, together with the side delimitation trench (58), a labyrinthic path for contaminating particles. A sealing ring (64a) extends on the bottom portion (29a, 29b) of the encapsulation structure (81) around an inner separation trench (30a) separating the mobile region (29b) from a fixed central region and closes a gap between the bottom portion (29a, 29b) and a mobile component (6) connected to the mobile region (29b) of the encapsulation structure (81).

Abstract translation: 半导体材料的微结构（77），包括微电机（10）和到封装结构（81）。 微电机（10）在外部通过第一和第二面（36,37）彼此相对，并且通过侧划界沟槽（58）限定。 封装结构（81）包围所述微电机（10）和具有底部部分（29A，29B）面向所述微电机的所述第二面（37），和在面向侧划界沟槽（58），外侧部（82）。 外分离沟槽（30B）穿过底部部分延伸（29A，29B）的封装结构（81）的，从外部侧部分（82）和限定了与侧划界沟槽分开的移动区域（29B），一起 （58），用于污染颗粒的labyrinthic路径。 密封环（64）上的封装结构（81）在内部分离沟槽（30A）周围的底部（29A，29B）延伸，从一个固定的中央区域分离所述移动区域（29B）和关闭所述底部之间的间隙 在部分（29A，29B）和连接到该移动区域内的移动部件（6）（29B）的封装结构（81）的。

公开(公告)号：EP1089261A1

公开(公告)日：2001-04-04

申请号：EP99830620.3

申请日：1999-10-01

Applicant: STMicroelectronics S.r.l.

Inventor： Murari, Bruno ,  Vigna, Benedetto ,  Mastromatteo, Ubaldo

IPC: G11B5/53 ,  G11B7/135

CPC classification number: G11B7/22 ,  G11B5/53 ,  G11B7/122 ,  Y10T29/49021 ,  Y10T29/49041

Abstract: A method of producing suspended elements for electrical connection between two portions of a micro-mechanism which can move relative to one another provides for the formation of a layer of sacrificial material (32), the formation of the electrical connection elements (43) on the layer of sacrificial material, and the removal of the layer of sacrificial material beneath the electrical connecting elements, the layer of sacrificial material being a thin film (32) with at least one adhesive side (21) which can be applied dry to the surface of the micro-mechanism.

Abstract translation: 的制造方法暂停对一个微机构，其可相对于彼此移动提供用于牺牲材料（32）层的形成，所述电连接元件（43）的形成的两个部分之间的电连接元件 牺牲材料的层，和去除牺牲材料的电连接元件之下的层的，牺牲材料是一个薄膜（32）与可应用于干的表面上的至少一个粘合侧（21）的层 微机构。

公开(公告)号：EP1039529A1

公开(公告)日：2000-09-27

申请号：EP99830158.4

申请日：1999-03-22

Applicant: STMicroelectronics S.r.l.

Inventor： Vigna, Benedetto ,  Ferrari, Paolo

IPC: H01L21/74 ,  H01L23/535 ,  H02N1/00 ,  G11B21/08

CPC classification number: H02N1/008 ,  G11B5/5552 ,  G11B21/106 ,  G11B21/21

Abstract: The method is intended for manufacturing a microintegrated structure (10), typically a microactuator for a hard-disk drive unit and includes the steps of: forming interconnection regions (32a,32b) in a substrate (31) of semiconductor material; forming a first monocrystalline epitaxial layer (33); forming lower sinker regions (35a,35b) in the monocrystalline epitaxial layer (33) and in direct contact with the interconnection regions (32a,32b); forming insulating material regions (40,41) on a structure portion of the monocrystalline epitaxial layer (33); growing a second layer (45) formed by a polycrystalline portion (45') above the insulating material region and elsewhere a monocrystalline portion (45''), and forming upper sinker regions (46,47) in the second layer (45) and in direct contact with the lower sinker regions (35a). In this way no PN junctions are present inside the polycrystalline portion (45') of the second layer and the structure has a high breakdown voltage.

Abstract translation: 该方法的目的是用于制造microintegrated结构（10）典型地，对于硬盘驱动器单元的微致动，并且包括以下步骤：形成互连区域（32A，32B）在（31）的半导体材料衬底; 形成第一单晶外延层（33）; 形成下下沉区域（35A，35B）在单晶外延层（33）以及与所述互连区域的直接接触（32A，32B）; 在单晶外延层（33）的结构部分上形成绝缘材料的区域（40,41）; 在第二层“的绝缘材料区域和其他区域之上的单晶部分（45生长由多晶部分（45）”形成的第二层（45）“），并形成上部下沉区域（46,47）（45）和 在与下下沉区（35A）直接接触。 以这种方式没有PN结是存在于第二层的多晶部分（45“）内并且该结构具有高的击穿电压。

公开(公告)号：EP0977180A1

公开(公告)日：2000-02-02

申请号：EP98830465.5

申请日：1998-07-30

Applicant: STMicroelectronics S.r.l.

Inventor： Sassolini, Simone ,  Zerbini, Sarah ,  Vigna, Benedetto ,  Mastromatteo, Ubaldo

IPC: G11B5/55

CPC classification number: G11B5/5552 ,  G11B5/11

Abstract: The microactuator (9) is attached to a first face (43) of a coupling (8) formed on a suspension (5), so that the R/W transducer (6) projects from the opposite face (44). A hole (41; 56) in the coupling (8) permits passage of an adhesive mass (42) interposed between the rotor (11) of the microactuator (9) and the R/W transducer (6). A strip (40) of adhesive material extends between the die (25) accommodating the microactuator (9) and the coupling (8), and externally surrounds the microactuator (9). The coupling (8) acts as a protective shield for the microactuator (9), both mechanically and electrically; it covers the microactuator (9) at the front, and prevents foreign particles from blocking the microactuator (9); in addition it electrically insulates the R/W transducer (6), sensitive to magnetic fields, from regions of the microactuator biased to a high voltage. With the gimbal (8), the strip (40) forms a sealing structure, which in practice surrounds the microactuator (9) on all sides.

Abstract translation: （8）上形成的悬浮液微致动器（9）被连接到联接器的第一面（43）（5），所以做了R / W换能器（6）从所述相对面（44）的项目。 的孔（41; 56）中的接头（8）允许微致动器（9）的转子（11）和R / W换能器（6）之间的粘合剂的质量（42）的通道。 粘合材料的条带（40），所述模具（25），其容纳微致动器（9）和所述接头（8）之间延伸，并且外侧包围微致动器（9）。 耦合器（8）作为用于微致动器的保护性屏蔽罩（9）机械和电气; 它覆盖微致动器（9）在前面，并从阻塞微致动器（9）防止外来颗粒; 此外它电绝缘R / W换能器（6），对磁场敏感，从微致动器的区域偏置到高电压。 与万向接头（8），所述条带（40）形成的密封结构，这在实践中围绕微致动器（9）在所有侧面上。

公开(公告)号：EP0955629A1

公开(公告)日：1999-11-10

申请号：EP98830269.1

申请日：1998-05-05

Applicant: STMicroelectronics S.r.l.

Inventor： Mastromatteo, Ubaldo ,  Murari, Bruno ,  Vigna, Benedetto ,  Zerbini, Sarah

IPC: G11B5/00 ,  G11B5/55 ,  H02N1/00

CPC classification number: H02N1/006 ,  G11B5/5552 ,  G11B5/58 ,  Y10T29/49027 ,  Y10T29/49032 ,  Y10T29/49052 ,  Y10T29/49053

Abstract: The method comprises the steps of: forming an integrated device (54) including a microactuator (10) in a semiconductor material wafer (29); forming an immobilisation structure (45,47) of organic material on the wafer; simultaneously forming a securing flange (51) integral with the microactuator (10) and electrical connections for connecting the integrated device to a read/write head; bonding a transducer (6,55) supporting the read/write head to the securing flange (51); connecting the electrical connections to the read/write head; cutting the wafer into dices; bonding the actuator unit to a suspension; and removing the immobilisation structure (45,47).

Abstract translation: 该方法包括以下步骤：在半导体材料晶片（29）中形成包括微​​致动器（10）的集成器件（54）; 在晶片上形成有机材料的固定结构（45,47）; 同时形成与微致动器（10）成一体的固定凸缘（51）和用于将集成装置连接到读/写头的电连接; 将支撑读/写头的换能器（6,55）接合到固定凸缘（51）; 将电连接连接到读/写头; 将晶片切成骰子; 将致动器单元结合到悬架上; 并移除固定结构（45,47）。