Abstract:
Method and apparatus of to obtain as-deposited polycrystalline and low-stress SiGe layers. These layers are used in Micro Electro-Mechanical Systems (MEMS) devices or micromachined structures. Different parameters are analysed which effect the stress in a polycrystalline layer. The parameters include, without limitation: deposition temperature; concentration of semiconductors (e.g., the concentration of Silicon and Germanium in a SixGe1-x layer, with x being the concentration parameter); concentration of dopants (e.g., the concentration of Boron or Phosphorous); amount of pressure; and use of plasma. Depending on the particular environment in which the polycrystalline SiGe is grown, different values of parameters are used.
Abstract:
In a process for manufacturing a micromechanical component, a 5 nm to 50 nm thick oxide or nitride layer is deposited as a protective layer (6) on a functional element (4) made of polysilicon by LPCVD (low pressure chemical vapour deposition).
Abstract:
Planar cavity Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structure are provided. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity (60a, 60b) having a planar surface using a reverse damascene process.
Abstract:
The present invention relates to MEMS device that comprises a first electrode, and a second electrode suspended with a distance to the first electrode with the aid of a suspension structure. The MEMS device further comprises at least one deformation electrode. The second electrode or the suspension structure or both are plastically deformable upon application of an electrostatic deformation force via the deformation electrode. This way, variations in the off- state position of the second electrode that occur during fabrication of different devices or during operation of a single device can be eliminated.
Abstract:
A method of fabricating a vertical actuation comb drive first etches a cavity in a semiconductive wafer; then the comb structure is etched, and the fixed part of the structure is deformed by an induced strain, by techniques such as boron doping, by adding a metal layer or a fixed oxide, or a mechanical latch or an additional plate electrode. In a manner known in the art, application of a voltage across the fingers of the comb produces a deflection either tilting or a vertical movement in the moveable portion of the comb drive.
Abstract:
A method for producing a unitary flexible microelement from a supporting wafer is provided. The unitary flexible microelement defines a supporting body having a solid region and a flexible region consisting of a thin part of the supporting wafer. The method comprises the following steps: defining thickness of the flexible region and growing an upper insulating layer to the upper surface covering the predefined area and growing a lower insulating layer to the lower surface covering the solid region. The method comprises defining a conductive layer on the predefined area of the upper surface, depositing a final insulating layer on the upper surface covering the conductive layer and depositing a metallic protective layer on the upper surface covering the insulating layer. Furthermore, the method comprises etching the lower surface until the etching reaches the thickness of the flexible region, and deepositing a conductive layer on the lower surface to establish a coaxial conductor.
Abstract:
A micromechanical structure and a method of fabricating a micromechanical structure are provided. The micromechanical structure comprises a silicon (Si) based substrate; a micromechanical element formed directly on the substrate; and an undercut formed underneath a released portion of the micromechanical element; wherein the undercut is in the form of a recess formed in the Si based substrate.