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    METHOD FOR DEPOSITING POLYCRYSTALLINE SIGE SUITABLE FOR MICROMACHINING AND DEVICES OBTAINED THEREOF
    31.
    发明申请
    METHOD FOR DEPOSITING POLYCRYSTALLINE SIGE SUITABLE FOR MICROMACHINING AND DEVICES OBTAINED THEREOF 审中-公开
    用于沉积适用于微机电的多晶硅信号的方法及其获得的器件

    公开(公告)号：WO01074708A2

    公开(公告)日：2001-10-11

    申请号：PCT/IB2001/000765

    申请日：2001-04-05

    IPC: B81C1/00 ,  C23C16/22 ,  H01L21/205 ,  H01L31/0368 ,  H01L31/18 ,  B81C

    CPC classification number: C23C16/22 ,  B81C1/00365 ,  B81C2201/0164 ,  B81C2201/017 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/03682 ,  H01L31/1812 ,  Y02E10/546

    Abstract: Method and apparatus of to obtain as-deposited polycrystalline and low-stress SiGe layers. These layers are used in Micro Electro-Mechanical Systems (MEMS) devices or micromachined structures. Different parameters are analysed which effect the stress in a polycrystalline layer. The parameters include, without limitation: deposition temperature; concentration of semiconductors (e.g., the concentration of Silicon and Germanium in a SixGe1-x layer, with x being the concentration parameter); concentration of dopants (e.g., the concentration of Boron or Phosphorous); amount of pressure; and use of plasma. Depending on the particular environment in which the polycrystalline SiGe is grown, different values of parameters are used.

    Abstract translation: 获得沉积的多晶和低应力SiGe层的方法和设备。 这些层用于微机电系统（MEMS）装置或微加工结构。 分析影响多晶层应力的不同参数。 参数包括但不限于：沉积温度; 半导体的浓度（例如，SixGe1-x层中的硅和锗的浓度，x是浓度参数）; 掺杂剂的浓度（例如硼或磷的浓度）; 压力量; 并使用等离子体。 取决于多晶SiGe生长的特定环境，使用不同的参数值。

    MEMS DEVICE WITH CONTROLLED ELECTRODE OFF-STATE POSITION
    34.
    发明申请
    MEMS DEVICE WITH CONTROLLED ELECTRODE OFF-STATE POSITION 审中-公开
    具有控制电极离态位置的MEMS器件

    公开(公告)号：WO2008072163A3

    公开(公告)日：2008-10-23

    申请号：PCT/IB2007054989

    申请日：2007-12-10

    Applicant: NXP BV ,  STEENEKEN PETER G

    Inventor： STEENEKEN PETER G

    IPC: B81B3/00 ,  H01H59/00

    CPC classification number: H01H59/0009 ,  B81B3/0056 ,  B81B2201/016 ,  B81C2201/017 ,  Y10T29/49105

    Abstract: The present invention relates to MEMS device that comprises a first electrode, and a second electrode suspended with a distance to the first electrode with the aid of a suspension structure. The MEMS device further comprises at least one deformation electrode. The second electrode or the suspension structure or both are plastically deformable upon application of an electrostatic deformation force via the deformation electrode. This way, variations in the off- state position of the second electrode that occur during fabrication of different devices or during operation of a single device can be eliminated.

    Abstract translation: 本发明涉及一种MEMS器件，其包括第一电极和借助于悬挂结构悬挂至第一电极一定距离的第二电极。 MEMS器件还包括至少一个变形电极。 当通过变形电极施加静电变形力时，第二电极或悬架结构或两者均可塑性变形。 这样，可以消除在制造不同装置期间或在单个装置的操作期间发生的第二电极的断开状态位置的变化。

    METHOD OF FABRICATING VERTICAL ACTUATION COMB DRIVES
    35.
    发明申请
    METHOD OF FABRICATING VERTICAL ACTUATION COMB DRIVES 审中-公开
    制造垂直执行机构的方法

    公开(公告)号：WO2003035542A2

    公开(公告)日：2003-05-01

    申请号：PCT/US2002/034459

    申请日：2002-10-26

    Applicant: OPTICNET, INC.

    Inventor： HOPKINS, Dean, A., Jr. ,  LIM, Martin ,  MAO, Minyao

    IPC: B81B3/00

    CPC classification number: B81C1/0015 ,  B81B2201/033 ,  B81B2203/0315 ,  B81B2203/051 ,  B81C2201/017 ,  H02N1/008

    Abstract: A method of fabricating a vertical actuation comb drive first etches a cavity in a semiconductive wafer; then the comb structure is etched, and the fixed part of the structure is deformed by an induced strain, by techniques such as boron doping, by adding a metal layer or a fixed oxide, or a mechanical latch or an additional plate electrode. In a manner known in the art, application of a voltage across the fingers of the comb produces a deflection either tilting or a vertical movement in the moveable portion of the comb drive.

    Abstract translation: 制造垂直致动梳状驱动器的方法首先蚀刻半导体晶片中的空腔; 然后对梳状结构进行蚀刻，通过添加金属层或固定氧化物的机械闩锁或附加的平板电极，通过诱导应变，硼掺杂等技术使固定部分发生变形。 以本领域已知的方式，跨梳子的手指施加电压产生在梳子驱动器的可移动部分中的倾斜或垂直移动的偏转。

    A UNITARY FLEXIBLE AND MECHANICALLY AND CHEMICALLY ROBUST MICROSYSTEM AND A METHOD FOR PRODUCING SAME
    36.
    发明申请
    A UNITARY FLEXIBLE AND MECHANICALLY AND CHEMICALLY ROBUST MICROSYSTEM AND A METHOD FOR PRODUCING SAME 审中-公开
    一种机械和机械和化学稳定的微阵列及其生产方法

    公开(公告)号：WO2002076879A1

    公开(公告)日：2002-10-03

    申请号：PCT/DK2002/000214

    申请日：2002-03-27

    Applicant: DANISH ELECTRONICS LIGHT & ACOUSTICS (DELTA) ,  LISBY, Torben ,  BRANEBJERG, Jens, A.

    Inventor： LISBY, Torben ,  BRANEBJERG, Jens, A.

    IPC: B81B3/00

    CPC classification number: G02B6/4226 ,  B01L3/502707 ,  B01L2200/12 ,  B01L2300/123 ,  B81C1/0019 ,  B81C2201/017 ,  B81C2201/053 ,  B81C2203/0136 ,  G02B6/3502 ,  G02B6/3584

    Abstract: A method for producing a unitary flexible microelement from a supporting wafer is provided. The unitary flexible microelement defines a supporting body having a solid region and a flexible region consisting of a thin part of the supporting wafer. The method comprises the following steps: defining thickness of the flexible region and growing an upper insulating layer to the upper surface covering the predefined area and growing a lower insulating layer to the lower surface covering the solid region. The method comprises defining a conductive layer on the predefined area of the upper surface, depositing a final insulating layer on the upper surface covering the conductive layer and depositing a metallic protective layer on the upper surface covering the insulating layer. Furthermore, the method comprises etching the lower surface until the etching reaches the thickness of the flexible region, and deepositing a conductive layer on the lower surface to establish a coaxial conductor.

    Abstract translation: 提供了从支撑晶片生产单一柔性微量元件的方法。 单一柔性微元件限定了具有固体区域和由支撑晶片的薄部分组成的柔性区域的支撑体。 该方法包括以下步骤：限定柔性区域的厚度并且将上绝缘层生长到覆盖预定区域的上表面，并将下绝缘层生长到覆盖固体区域的下表面。 该方法包括在上表面的预定区域上限定导电层，在覆盖导电层的上表面上沉积最终绝缘层，并在覆盖绝缘层的上表面上沉积金属保护层。 此外，该方法包括蚀刻下表面，直到蚀刻达到柔性区域的厚度，并且在下表面上沉积导电层以建立同轴导体。

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