公开(公告)号：EP2438411A4

公开(公告)日：2015-05-06

申请号：EP10780112

申请日：2010-05-28

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT

Inventor： BLOMBERG MARTTI

IPC: G01J3/26 ,  G02B5/28

CPC classification number: G02B26/001 ,  B81B3/0013 ,  B81B2201/042 ,  B81C2201/115 ,  G01J3/26

公开(公告)号：EP1963227B1

公开(公告)日：2012-03-28

申请号：EP06841275.8

申请日：2006-11-29

Applicant: ROBERT BOSCH GMBH

Inventor： KAELBERER, Arnd ,  FREY, Jens

IPC: B81C1/00

CPC classification number: B81C1/00984 ,  B81B3/001 ,  B81C2201/115 ,  Y10T428/24355

Abstract: The invention relates to a micromechanical component comprising a substrate (1), a first intermediate layer (2) that is disposed thereupon, and a first layer (3) which is arranged thereupon and is structured down to the first intermediate layer (2). A second intermediate layer (6) is placed on top of the first layer (3) while a second layer (9) into which at least one movable micromechanical structure (14) is structured is positioned on the second intermediate layer (6). The second intermediate layer (6) is removed in a sacrificial zone below the movable micromechanical structure (14) while the first intermediate layer (2) is removed in part in zones below the first layer (3). The invention is characterized in that the movable micromechanical structure (14) is provided with at least one stop area on a bottom face. Said stop area can be rested against a zone of the first layer (3) which is supported by the first intermediate layer (2) by deflecting the movable micromechanical structure (14). The invention further relates to a method for producing such a micromechanical component.

公开(公告)号：EP1398811A2

公开(公告)日：2004-03-17

申请号：EP03020159.4

申请日：2003-09-05

Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW

Inventor： Rottenberg, Xavier ,  Jansen, Henri ,  Tilmans, Hendrikus ,  De Raedt, Walter

IPC: H01H59/00

CPC classification number: H01H59/0009 ,  B81B3/001 ,  B81B2201/016 ,  B81C2201/115 ,  H01G5/16 ,  H01G5/18

Abstract: A micro electromechanical switchable capacitor is disclosed, comprising a substrate, a bottom electrode, a dielectric layer deposited on at least part of said bottom electrode, a conductive floating electrode deposited on at least part of said dielectric layer, an armature positioned proximate to the floating electrode and a first actuation area in order to stabilize the down state position of the armature. The device may furthermore comprise a second actuation area. The present invention provides shunt switches and series switches with actuation in zones attached to the floating electrode area or with relay actuation.

Abstract translation: 导电浮动电极（14）沉积在形成在底部电极（11）的一部分的电介质层（12）上。 电枢（13）位于浮动电极附近以形成沿垂直于底部电极平面的方向投影到底部电极上的重叠。 在未被浮动电极覆盖的重叠部分处形成致动区域（28）。 对于微机电可切换电容器的处理方法，还包括独立权利要求。

公开(公告)号：EP1144890A2

公开(公告)日：2001-10-17

申请号：EP99960504.1

申请日：1999-11-16

Applicant: California Institute of Technology

Inventor： TAI, Yu-Chong,California Institute of Technology ,  WANG, Xuan-Qi,California Institute of Technology

IPC: F16K15/14 ,  F16K31/02 ,  F16K1/00

CPC classification number: F16K99/0001 ,  B81B3/001 ,  B81B2201/054 ,  B81B2203/0127 ,  B81C2201/115 ,  F15C5/00 ,  F16K15/144 ,  F16K99/0009 ,  F16K99/0034 ,  F16K99/0057 ,  F16K2099/0074 ,  F16K2099/008 ,  F16K2099/0094 ,  Y10T137/7888 ,  Y10T137/7895

Abstract: The present disclosure describes a Parylene micro check valve (10) including a micromachined silicon valve seat (15) with a roughened top surface to which a membrane cap (20) is anchored by twist-up tethers (25). The micro check valve is found to exhibit low cracking pressure, high reverse pressure, low reverse flow leakage, and negligible membrane-induced flow resistance when used as a valve over a micro orifice through which flow liquid and gas fluids.

公开(公告)号：US11655138B2

公开(公告)日：2023-05-23

申请号：US17302484

申请日：2021-05-04

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Hsi-Cheng Hsu ,  Kuo-Hao Lee ,  Jui-Chun Weng ,  Ching-Hsiang Hu ,  Ji-Hong Chiang ,  Lavanya Sanagavarapu ,  Chia-Yu Lin ,  Chia-Chun Hung ,  Jia-Syuan Li ,  Yu-Pei Chiang

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0005 ,  B81C1/00968 ,  B81C2201/112 ,  B81C2201/115

Abstract: A micro-electromechanical-system (MEMS) device may be formed to include an anti-stiction polysilicon layer on one or more moveable MEMS structures of a device wafer of the MEMS device to reduce, minimize, and/or eliminate stiction between the moveable MEMS structures and other components or structures of the MEMS device. The anti-stiction polysilicon layer may be formed such that a surface roughness of the anti-stiction polysilicon layer is greater than the surface roughness of a bonding polysilicon layer on the surfaces of the device wafer that are to be bonded to a circuitry wafer of the MEMS device. The higher surface roughness of the anti-stiction polysilicon layer may reduce the surface area of the bottom of the moveable MEMS structures, which may reduce the likelihood that the one or more moveable MEMS structures will become stuck to the other components or structures.

公开(公告)号：US20180243792A1

公开(公告)日：2018-08-30

申请号：US15905289

申请日：2018-02-26

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Susan A. Alie ,  Joseph Lutsky ,  David Grosjean

IPC: B06B1/02 ,  B81B3/00 ,  B81C1/00 ,  G01N29/24

CPC classification number: B06B1/0292 ,  B81B3/0086 ,  B81C1/00698 ,  B81C2201/0173 ,  B81C2201/115 ,  B81C2203/038 ,  G01N29/2406

Abstract: Processes for fabricating capacitive micromachined ultrasonic transducers (CMUTs) are described, as are CMUTs of various doping configurations. An insulating layer separating conductive layers of a CMUT may be formed by forming the layer on a lightly doped epitaxial semiconductor layer. Dopants may be diffused from a semiconductor substrate into the epitaxial semiconductor layer, without diffusing into the insulating layer. CMUTs with different configurations of N-type and P-type doping are also described.

公开(公告)号：US09988260B2

公开(公告)日：2018-06-05

申请号：US15142381

申请日：2016-04-29

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： Ruben B. Montez ,  Arvind S. Salian ,  Robert F. Steimle

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/001 ,  B81B2201/0235 ,  B81B2203/0315 ,  B81C1/00976 ,  B81C2201/0132 ,  B81C2201/115 ,  B81C2203/0118

Abstract: A surface of a cavity of a MEMS device that is rough to reduce stiction. In some embodiments, the average roughness (Ra) of the surface is 5 nm or greater. In some embodiments, the rough surface is formed by forming one or more layers of a rough oxidizable material, then oxidizing the material to form an oxide layer with a rough surface. Another layer is formed over the oxide layer with the rough surface, wherein the roughness of the oxide layer is transferred to the another layer.

公开(公告)号：US20160176707A1

公开(公告)日：2016-06-23

申请号：US14574784

申请日：2014-12-18

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： Ruben B. Montez ,  Robert F. Steimle

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81B3/001 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81C2201/115

Abstract: A mechanism for reducing stiction in a MEMS device by decreasing surface area between two surfaces, such as a travel stop and travel stop region, that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of the travel stop region. This is achieved by depositing a polysilicon layer over a dielectric layer using gaseous hydrochloric acid as one of the reactants. A subsequent etch back is performed to further increase the roughness. The deposition of polysilicon and subsequent etch back may be repeated one or more times in order to obtain the desired roughness. A final polysilicon layer may then be deposited to achieve a desired thickness. This final polysilicon layer is patterned to form the travel stop regions. The rougher surface decreases the surface area available for contact and, in turn, decreases the area through which stiction can be imparted.

Abstract translation: 提供了一种用于通过减小可以紧密接触的两个表面之间的表面积（例如行驶停止和行驶停止区域）来减小MEMS装置中的静摩擦的机构。 通过增加行驶停止区域的表面粗糙度来实现接触表面积的减小。 这是通过使用气态盐酸作为反应物之一在电介质层上沉积多晶硅层来实现的。 执行随后的回蚀以进一步增加粗糙度。 多晶硅的沉积和随后的回蚀可以重复一次或多次，以获得所需的粗糙度。 然后可以沉积最终的多晶硅层以达到期望的厚度。 对该最终多晶硅层进行图案化以形成行驶停止区域。 较粗糙的表面减小了可用于接触的表面积，并且进而降低了可赋予粘性的面积。

公开(公告)号：US20160115016A1

公开(公告)日：2016-04-28

申请号：US14667169

申请日：2015-03-24

Applicant: INVENSENSE, INC.

Inventor： Fang Liu ,  Martin Lim ,  Jong Il Shin ,  Jongwoo Shin

IPC: B81C1/00

CPC classification number: B81B3/001 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C2201/115 ,  B81C2203/0792

Abstract: Various embodiments provide for a method for roughening a surface of a MEMs device or the surface of a CMOS surface. A first material can be deposited in a thin layer over a surface made of a second material. After heating, the first and second materials, they can partially melt and interdiffuse, forming an alloy. The first material can then be removed and the alloy is removed at the same time. The surface of the second material that is left behind has then been roughened due to the interdiffusion of the first and second materials.

Abstract translation: 各种实施例提供了用于使MEM器件的表面或CMOS表面的表面粗糙化的方法。 第一材料可以沉积在由第二材料制成的表面上的薄层中。 加热后，第一和第二种材料，它们可以部分熔化和相互扩散，形成合金。 然后可以除去第一种材料并同时去除合金。 然后由于第一和第二材料的相互扩散，留下的第二材料的表面被粗糙化。

公开(公告)号：US20150353353A1

公开(公告)日：2015-12-10

申请号：US14827214

申请日：2015-08-14

Applicant: Invensense, Inc.

Inventor： Cerina Zhang ,  Nim Tea

IPC: B81C1/00

CPC classification number: B81C1/00984 ,  B81B3/0008 ,  B81B2207/015 ,  B81C1/00976 ,  B81C2201/115 ,  H01L21/76838 ,  H01L23/48 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of the invention includes reducing stiction of a MEMS device by providing a conductive path for electric charge collected on a bump stop formed on a substrate. The bump stop is formed by depositing and patterning a dielectric material on the substrate, and the conductive path is provided by a conductive layer deposited on the bump stop. The conductive layer can also be roughened to reduce stiction.

Abstract translation: 本发明的一种方法包括通过为形成在衬底上的凸点块上收集的电荷提供导电路径来减少MEMS器件的静电。 通过在衬底上沉积和图案化介电材料形成凹凸块，并且通过沉积在凸块上的导电层提供导电路径。 导电层也可以被粗糙化以减少粘性。