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    PHOTOEMITTERS
    31.
    发明申请
    PHOTOEMITTERS 审中-公开
    光电发射

    公开(公告)号：WO1994001882A1

    公开(公告)日：1994-01-20

    申请号：PCT/GB1993001326

    申请日：1993-06-24

    Applicant: THIRD GENERATION TECHNOLOGY LIMITED ,  HOWORTH, Jonathan, Ross

    Inventor： THIRD GENERATION TECHNOLOGY LIMITED

    IPC: H01J01/35

    CPC classification number: H01J43/08 ,  H01J1/34 ,  H01J2201/3423

    Abstract: Photoemitters are used to convert received photons of light (or other electromagnetic radiation) into electrons, and it is common to employ an electron multiplier to amplify the low electron flux for use by an imaging or a counting system. Interest has been shown in semiconductor photoemitter and electron multiplier devices based on "mixtures" of the Group III and Group V elements gallium and arsenic or phosphorus, but these are not easy to use in a photoelectric tube. In transmissive mode these III-V materials have high sensitivity to infrared (IR), but have much poorer sensitivity to blue and ultraviolet. Now, it turns out that the III-IV materials are more blue-sensitive in reflective mode. Moreover, in this mode they are good as electron multipliers. The problem is to provide a device operating in this reflective mode with good imaging capability (the ejected electrons scatter). The present invention seeks to solve this by providing a III-V photoemitter structure where, though the photoemissive material is operating in blue-sensitive reflective mode, the device itself is operating in image-retaining transmissive mode. More specifically, the invention proposes that the III-V photoemitter layer (11) be in the form of an array of spaced III-V elements (13) the front faces of which are angled towards the gaps between the elements. Electrons (e-) ejected from the elements' front faces (by impacting photons or electrons) will, under the influence of an appropriate electrical field (E), be swept laterally towards and then through the spaces between the elements, so that though the III-V material is acting in reflective mode, and so has good blue sensitivity, the device itself is acting in transmissive mode, and so has good imaging properties. To form a photocathode/photomultiplier device a plurality of these individual III-V layers may be stacked one above the next, with the elements of each succeeding layer aligned with the gaps in the preceding layer, so that electrons ejected from each layer and passing through the gaps will impact the next adjacent layer without losing their image-defining spatial resolution.

    Abstract translation: 光收发器用于将接收的光（或其他电磁辐射）的光子转换成电子，并且通常使用电子倍增器来放大由成像或计数系统使用的低电子通量。 已经在基于III族和V族元素镓和砷或磷的“混合物”的半导体光电发生器和电子倍增器装置中显示出兴趣，但这些在光电管中不容易使用。 在透射模式下，这些III-V材料对红外（IR）具有高灵敏度，但对蓝色和紫外线具有较差的灵敏度。 现在，事实证明，III-IV材料在反射模式下对蓝色敏感。 此外，在这种模式下，它们作为电子倍增器是好的。 问题在于提供一种具有良好成像能力（喷射电子散射）的这种反射模式的装置。 本发明寻求通过提供III-V光发射器结构来解决这个问题，其中尽管光发射材料以蓝色敏感反射模式操作，但是器件本身在图像保持透射模式下操作。 更具体地，本发明提出III-V光电发射体层（11）为间隔开的III-V元件阵列（13）的形式，其前表面朝向元件之间的间隙成角度。 通过适当的电场（E）的影响，从元件的正面（通过撞击光子或电子）喷出的电子（e-）将被横向扫过，然后穿过元件之间的空间，使得尽管 III-V材料以反射模式工作，因此具有良好的蓝色灵敏度，器件本身以透射模式工作，因此具有良好的成像性能。 为了形成光电阴极/光电倍增器装置，可以将多个这些单独的III-V层叠加到下一个之上，每个后续层的元素与前一层中的间隙对准，使得从每层排出的电子通过 间隙将影响下一个相邻层，而不会失去其图像定义的空间分辨率。

    초소형방출영역을갖는음전자친화성의광전음극을사용한전자소오스
    32.
    发明授权
    초소형방출영역을갖는음전자친화성의광전음극을사용한전자소오스 失效

    公开(公告)号：KR100408577B1

    公开(公告)日：2004-01-24

    申请号：KR1019980700227

    申请日：1996-06-27

    Applicant: 인테벡, 인코포레이티드 ,  더 보드 오브 트러스티스 오브 더 리랜드 스탠포드 주니어 유니버시티

    Inventor： 바움,아론,더블유. ,  코스텔로,케네쓰,에이. ,  피스,알.패비언

    IPC: H01J37/26

    CPC classification number: G03F7/70375 ,  H01J3/021 ,  H01J27/04 ,  H01J37/073 ,  H01J2201/3423

    Abstract: An electron source includes a negative electron affinity photocathode on a light-transmissive substrate and a light beam generator for directing a light beam through the substrate at the photocathode for exciting electrons into the conduction band. The photocathode has at least one active area for emission of electrons with dimensions of less than about two micrometers. The electron source further includes electron optics for forming the electrons into an electron beam and a vacuum enclosure for maintaining the photocathode at high vacuum. In one embodiment, the active emission area of the photocathode is defined by the light beam that is incident on the photocathode. In another embodiment, the active emission area of the photocathode is predefined by surface modification of the photocathode. The source provides very high brightness from an ultra-small active emission area of the photocathode.

    Abstract translation: 电子源包括在透光衬底上的负电子亲和力光电阴极和用于将光束引导通过衬底并在光阴极处激发电子进入导带的光束发生器。 光电阴极具有至少一个用于发射尺寸小于约2微米的电子的有源区域。 电子源还包括用于将电子形成为电子束的电子光学器件和用于将光电阴极维持在高真空的真空外壳。 在一个实施例中，光电阴极的有源发射区域由入射在光阴极上的光束限定。 在另一个实施例中，光阴极的有源发射区域通过光阴极的表面修改来预定义。 该光源可以从光阴极的超小型有源发射区域提供非常高的亮度。

    반도체 광전 음극
    33.
    发明公开
    반도체 광전 음극 无效
    半导体光电阴极

    公开(公告)号：KR1020030063435A

    公开(公告)日：2003-07-28

    申请号：KR1020037008147

    申请日：2001-12-18

    Applicant: 하마마츠 포토닉스 가부시키가이샤

    Inventor： 니이가키미노루 ,  히로하타토루 ,  칸히로후미 ,  모리쿠니요시

    IPC: H01L31/09

    CPC classification number: H01J1/34 ,  H01J2201/3423

    Abstract: 광흡수층(2)이 두꺼운 경우에 있어서는 시간 분해능 저하 현상이 생기지만, 광흡수층(2)의 두께를 제한하면, 1개의 전자군에 있어서의 전자 농도가 낮은 부분이 커트되기 때문에, 인접하는 전자 농도 분포의 겹침 영역이 감소하여, 전자의 통과에 필요한 주행 시간의 단축에 의해서, 확산에 의해서 겹치는 영역도 억제할 수 있고, 더욱이, 전계 강도도 높일 수 있기 때문에, 이들의 상승적 작용에 의해서, 적외선의 시간 분해능을 현저하게 향상시킬 수 있다. 광흡수층의 두께가 적외선의 파장 정도, 1.3㎛인 경우의 시간 분해능이 40ps인 경우, 이 두께를 0.19㎛로 한 경우에는 시간 분해능은 7.5ps가 된다.

    붕소층을 갖는 실리콘 기판 상에 전계 이미터 어레이를 포함하는 광전 음극
    36.
    发明公开
    붕소층을 갖는 실리콘 기판 상에 전계 이미터 어레이를 포함하는 광전 음극 审中-公开
    包括在具有硼层的硅衬底上的场发射体阵列的光伏电池

    公开(公告)号：KR20180000735A

    公开(公告)日：2018-01-03

    申请号：KR20177036600

    申请日：2016-05-21

    IPC: H01J31/50 ,  G02B21/12 ,  H01J1/34 ,  H01J29/38 ,  H01J31/26 ,  H01L27/146 ,  H01L27/148

    CPC classification number: H01J1/308 ,  H01J1/3044 ,  H01J1/34 ,  H01J2201/3423 ,  H01L27/14831 ,  H01L31/02165 ,  H01L31/105 ,  H01L31/107

    Abstract: 광전음극은광전자방출을향상시키도록실리콘기판상에일체형으로형성된전계이미터어레이(FEA), 및산화를방지하도록 FEA의외측표면바로위에배치된얇은붕소층을이용한다. 전계이미터는 2차원의주기적인패턴으로배치된다양한형상(예컨대, 피라미드또는둥근수염형태)을갖는돌출부에의해형성되고, 역방향바이어스모드에서동작하도록구성될수 있다. 선택적인게이트층이방출전류를제어하도록제공된다. 선택적인제2 붕소층이조명(상부) 표면상에형성되고, 선택적인반사방지재료층이제2 붕소층상에형성된다. 선택적인외부전위가양 측의조명표면과외측표면사이에발생된다. n 타입실리콘전계이미터와 p-i-n 포토다이오드필름의선택적인조합이특별한도핑계획에의해그리고외부전위를인가함으로써형성된다. 광전음극은센서및 검사시스템의일부를형성한다.

    Abstract translation: 光电阴极使用在硅衬底上整体形成的场发射体阵列（FEA）以改善光电子发射，并且使用直接设置在FEA外表面上的薄硼层来防止氧化。 电场测量仪由具有以二维周期性图案布置的各种形状（例如金字塔形或圆形晶须）的突起形成，并且可以被配置为以反向偏压模式操作。 提供可选的栅极层来控制发射电流。 在照明（顶部）表面上形成选择性的磷2硼层，并且现在在两个硼层上形成选择性的抗反射材料层。 并且在照明表面与选择性外部电位施加侧的外表面之间产生。 n型硅场发射器和p-i-n光电二极管膜的可选组合通过特殊的掺杂方案并通过施加外部电势形成。 光电阴极构成了传感器和检测系统的一部分。

    다중대역 광음극 및 관련 검출기
    37.
    发明公开
    다중대역 광음극 및 관련 검출기 审中-实审
    多频带光电阴极和相关探测器

    公开(公告)号：KR1020170133368A

    公开(公告)日：2017-12-05

    申请号：KR1020177027947

    申请日：2016-04-06

    Applicant: 포토니스 프랑스

    Inventor： 콘데,무스타파 ,  폴츠,저스틴

    IPC: H01J1/34 ,  H01J40/06

    CPC classification number: H01J40/06 ,  H01J1/34 ,  H01J40/16 ,  H01J2201/3423

    Abstract: 본발명은활성층(230) 및입사광자의흐름을받아들이기에적합한입력윈도우(210)를포함하는광음극에관한것으로, 상기활성층은입사광자의흐름방향으로감소하는금지된대역폭을갖는반도체로물질로구성된복수의기본층(230, 230)으로구성된다. 활성층의각 기본층이자체광전방출면(240, 240)을갖도록입력윈도우와대향된광음극표면이구조화된다. 기본층의반도체물질을선택함으로써, 가시광선스펙트럼및 근적외선모두에서높은감도를갖는영상을얻을수 있다.

    Abstract translation: 本发明涉及一种包括有源层（230）和适于接收入射光流的输入窗口（210）的光阴极，所述有源层包括多个半导体材料，其禁带宽度在入射光的流动方向上减小 图2的基层230和230可以是任意的。 与输入窗口相对的光电阴极表面被构造为使得有源层的每个基层具有其自己的光电发射表面240， 通过选择基层的半导体材料，可以在可见光谱和近红外线两者中获得具有高灵敏度的图像。

    Spin polarized electron generating element
    40.
    发明专利
    Spin polarized electron generating element 有权
    旋转偏振电子元件

    公开(公告)号：JP2009266809A

    公开(公告)日：2009-11-12

    申请号：JP2009073929

    申请日：2009-03-25

    Applicant: Daido Gakuen ,  Daido Steel Co Ltd ,  Univ Nagoya ,  国立大学法人名古屋大学 ,  大同特殊鋼株式会社 ,  学校法人大同学園

    Inventor： UJIHARA TORU ,  KIN HIDEMITSU ,  TAKEDA YOSHIKAZU ,  NAKANISHI TSUTOMU ,  YAMAMOTO NAOHITO ,  SAKA TAKASHI ,  KATO TOSHIHIRO

    IPC: H01J37/073 ,  G21K1/00 ,  H01J1/34 ,  H01J37/28

    CPC classification number: G21K1/16 ,  H01J1/34 ,  H01J3/021 ,  H01J37/06 ,  H01J2201/3423 ,  H01J2203/0296 ,  H01J2237/06333 ,  H01J2237/06383 ,  H01J2237/24557 ,  H01J2237/26

    Abstract: PROBLEM TO BE SOLVED: To achieve a spin polarized electron generating element having high spin polarization degree and external quantum efficiency while providing flexibility in selecting materials of a substrate, a buffer layer, and a distorted superlattice layer. SOLUTION: In the spin polarized electron generating element consisting of a substrate, a buffer layer, and a distorted superlattice layer formed on the buffer layer, an intermediate layer is interposed between the substrate and the buffer layer, the intermediate layer being made of crystal having a lattice constant larger than that of crystal constituting the buffer layer. With this, cracks in a direction perpendicular to the substrate are generated in the buffer layer due to tensile distortion, so that the buffer layer becomes mosaic-like. As a result, since a glide dislocation in an oblique direction is not introduced into the distorted superlattice layer grown on the buffer layer, the crystalline property of the distorted superlattice layer is improved. Consequently, the spin polarization degree of excited electrons and the external quantum efficiency of polarized electrons are improved. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：为了获得具有高自旋极化度和外部量子效率的自旋极化电子发生元件，同时在选择衬底，缓冲层和畸变超晶格层的材料方面提供灵活性。 解决方案：在由衬底，缓冲层和形成在缓冲层上的变形超晶格层组成的自旋极化电子发生元件中，在衬底和缓冲层之间插入中间层，中间层被制成 的晶格常数大于构成缓冲层的晶体的晶格常数。 由此，由于拉伸变形，在缓冲层中产生与基板垂直的方向上的裂纹，使得缓冲层变成马赛克状。 结果，由于在倾斜方向上的滑移位错不被引入到在缓冲层上生长的失真的超晶格层中，所以改善了超晶格层的结晶特性。 因此，激发电子的自旋极化度和极化电子的外部量子效率得到改善。 版权所有（C）2010，JPO＆INPIT

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