Abstract:
An electron-emitting cathode (6) consists of an electrically conducting emitter layer (7) attached to a side wall (2) which consists of stainless steel and a gate (9) which is fixed at a mall distance inside a concave emitter surface of the emitter layer (7). The cathode (6) surrounds a reaction area (3) containing a cylindrical grid-like anode (5) and a central ion collector (4) which consists of a straight axial filament. An ion collector current (lie) reflecting the densitiy of the gas in the reaction region (3) is measured by a current meter (11) while a gate voltage (VG) is kept between the ground voltage of the emitter layer (7) and a higher anode voltage (VA) and is regulated in such a way that an anode current (IA) is kept constant. The emitter layer (7) may consists of carbon nanotubes, diamond-like carbon, a metal or a mixture of metals or a semiconductor material, e.g., silicon which may be coated, e.g., with carbide or molybdenum. The emitter surface can, however, also be a portion of the inside surface of the side wall roughened by, e.g., chemical etching. The gate (9) may be a grid or it may be made up of patches of metal film covering spacers distributed over the emitter area or a metal film covering an electron permeable layer placed on the emitter surface.
Abstract:
An electron-emitting cathode (6) consists of an electricaly conducting emitter layer (7) attached to a side wall (2) and a gate (9) which is fixed at a mall distance inside a concave emitter surface of the emitter layer (7). The cathode (6) surrounds a reaction area (3) containing a cylindrical grid-like anode (5) and a central ion collector (4) which consists of a straight axial filament. An ion collector current (I IC ) reflecting the densitiy of the gas in the reaction region (3) is measured by a current meter (11) while a gate voltage (Vc) is kept between the ground voltage of the emitter layer (7) and a higher anode voltage (V A ) and is regulated in such a way that an anode current (T A ) is kept constant. The emitter layer (7) may comprise an array of metal, e.g., nickel or molybdenum tips or consist essentially of a semiconductor material like silicon, preferably coated by, e.g., carbide, diamond-like carbon or molybdenum, or of carbon nanotubes or it may be a roughened surface portion of the side wall surface. The gate (9) may be a grid or it may be made up of patches of metal film covering spacers distributed over the emitter area or a metal film covering an electron permeable layer placed on the emitter surface.
Abstract:
An ionization gauge comprises a source of electrons which is disposed outside an anode volume defined by an open anode. A plurality of ion collector electrodes is disposed within said anode volume. A plurality of axially extending anode support posts support the open anode, said anode support posts being electrically connected to the open anode. The plurality of ion collector electrodes are respectively located sufficiently close to said plurality of axially extending anode support posts so as to substantially repel said electrons from said anode support posts.
Abstract:
In an ionization gauge, the effect of X-rays emitted when a collimated electron beam strikes grid surfaces in the gauge structure is reduced by a louvered beam stop. The louvered beam stop creates shadow regions having no X-rays, thus minimizing the amount of X-rays striking the collector plate and reducing the X-ray effect portion of the residual current.