公开(公告)号：JP2006281766A

公开(公告)日：2006-10-19

申请号：JP2005374983

申请日：2005-12-27

Applicant: National Central Univ ,  國立中央大學

Inventor： CHIN SHIJIN ,  KYO KOKUKUN

IPC: B32B7/02 ,  C23C16/44

CPC classification number: C23C16/30 ,  B81B3/0072 ,  B81C2201/0167 ,  C23C14/06 ,  G01K5/62 ,  G01K5/68 ,  Y10T428/12493 ,  Y10T428/125 ,  Y10T428/12528 ,  Y10T428/12535

Abstract: PROBLEM TO BE SOLVED: To provide a structure in which a film for compensation is formed on a substrate in order to reduce the stress accumulated between a film deposited on a substrate and the substrate, and to provide the method of thermal stress compensation. SOLUTION: The structure of thermal stress compensation at least comprises a substrate, a first coating film and a second coating film. The substrate has a first positive coefficient of thermal expansion. The first film having a second positive coefficient of thermal expansion is placed over the substrate. The second film having a third negative coefficient of thermal expansion is placed over the substrate. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种结构，其中在基板上形成用于补偿的膜，以便减少在沉积在基板上的薄膜和基板之间积累的应力，并提供热应力补偿的方法 。 解决方案：热应力补偿的结构至少包括基板，第一涂膜和第二涂膜。 基板具有第一正的热膨胀系数。 具有第二正热膨胀系数的第一膜放置在衬底上。 具有第三负热膨胀系数的第二膜放置在衬底上。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2004312999A

公开(公告)日：2004-11-04

申请号：JP2004129835

申请日：2004-04-26

Applicant: Mcnc ,  エムシーエヌシーMcnc

Inventor： GOODWIN-JOHANSSON SCOTT HALDEN

IPC: B81B7/04 ,  B81B3/00 ,  B81C1/00 ,  G02B6/35 ,  G02B26/02 ,  H01H59/00 ,  H02N1/00

CPC classification number: B81C1/00666 ,  B81B2201/032 ,  B81B2203/0118 ,  B81C2201/0167 ,  G02B6/353 ,  G02B6/3566 ,  G02B6/357 ,  G02B6/3594 ,  H01H59/0009 ,  H01H2059/0081

Abstract: PROBLEM TO BE SOLVED: To provide an MEMS electrostatic device which operates at a lower and more predictable operating voltage.
SOLUTION: An intermediate portion 80 of a multilayer flexible composite material laminated on a substrate is retained at a predetermined position regardless of application of electrostatic force, wherein a predetermined air gap is maintained and its distance is relatively fixed from a microelectronic surface 10 of a lower part and may be reduced up to zero. A movable end portion 100 of the flexible composite material curls by itself unidirectionally due to a difference in thermal expansion coefficient between composite material layers. The end portion 100 moves in response to the electrostatic force, and as a result a distance that the flexible composite material separates from the microelectronic surface 10 changes. The device is disposed so that it may selectively cause electromagnetic radiation to pass through a pathway or block the pathway. A material used for an attenuator is selected so that it may cause various types of electromagnetic radiation to pass through, reflect or absorb. A plurality of electromagnetic attenuators are disposed in an array, and their subsets are selectively operated.
COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2004167671A

公开(公告)日：2004-06-17

申请号：JP2003348877

申请日：2003-10-07

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： KOCIS JOSEPH T ,  TORNELLO JAMES ,  PETRARCA KEVIN ,  VOLANT RICHARD ,  SUBANNA SESHADRI

IPC: B81C1/00 ,  B81B3/00 ,  H01H50/00

CPC classification number: B81C1/00666 ,  B81B2201/014 ,  B81C2201/0167 ,  H01F2007/068 ,  H01H50/005

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing an encapsulated micro electro-mechanical system (MEMS) which causes little metallic fatigue and stress.
SOLUTION: The MEMS manufacturing method includes steps for forming a dielectric layer 204, patterning the upper surface of the first dielectric layer 204 to form a trench, forming a release material 212 in the trench, patterning the upper surface of the release material 212 to form the other trench, forming a first encapsulating layer 222 that includes sidewalls in the other trench, forming a core layer 242 in the first encapsulating layer 222, and forming a second encapsulating layer 262 above the core layer 242 where the second encapsulating layer 262 is connected to sidewalls of the first encapsulating layer 222.
COPYRIGHT: (C)2004,JPO

公开(公告)号：US20190233277A1

公开(公告)日：2019-08-01

申请号：US16379982

申请日：2019-04-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: B81B3/00 ,  H01L41/113 ,  B81C1/00 ,  H01H57/00 ,  G06F17/50 ,  H01H1/00 ,  H01H59/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US20180346318A1

公开(公告)日：2018-12-06

申请号：US16042303

申请日：2018-07-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Anthony K. Stamper ,  John G. Twombly

IPC: B81B3/00 ,  H01L41/113 ,  B81C1/00 ,  H01H59/00 ,  G06F17/50 ,  H01H1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

公开(公告)号：US09919912B2

公开(公告)日：2018-03-20

申请号：US15273772

申请日：2016-09-23

Applicant: Robert Bosch GmbH

Inventor： Frederik Ante ,  Maximilian Amberger

IPC: B64C1/22 ,  B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0054 ,  B81B2201/0264 ,  B81B2207/098 ,  B81C1/00309 ,  B81C1/00333 ,  B81C2201/0167 ,  B81C2201/053 ,  H01L2224/27013

Abstract: A microelectronic component arrangement includes a sensor and a carrier. The sensor has a detection surface and a region including contact elements situated at a first distance with respect to one another. The carrier includes a mounting surface, and the sensor is fixed on the carrier by the contact elements situated at a first distance with respect to one another at least regionally. The detection surface is opposite the mounting surface in a manner having a second distance with respect to the mounting surface. The contact elements are wetted by a mechanically stabilizing material, the region including the contact elements is enclosed by the mechanically stabilizing material, and the detection surface is free of the mechanically stabilizing material.

公开(公告)号：US20180072566A1

公开(公告)日：2018-03-15

申请号：US15802789

申请日：2017-11-03

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: H01P1/10 ,  B81C1/00 ,  H01H59/00 ,  H01L41/113 ,  H01H57/00 ,  G06F17/50 ,  B81B3/00 ,  H01H1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US20170158490A1

公开(公告)日：2017-06-08

申请号：US15437727

申请日：2017-02-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: B81B3/00 ,  G06F17/50 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US20170154800A1

公开(公告)日：2017-06-01

申请号：US15432560

申请日：2017-02-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： John J. Garant ,  Jonathan H. Griffith ,  Brittany L. HEDRICK ,  Edmund J. Sprogis

IPC: H01L21/683 ,  B32B38/10 ,  B32B37/24

CPC classification number: H01L21/6835 ,  B32B37/24 ,  B32B38/10 ,  B32B2037/246 ,  B32B2315/08 ,  B32B2457/14 ,  B81C1/00666 ,  B81C2201/0167 ,  H01L2221/68304 ,  H01L2221/68327

Abstract: A wafer handler with a removable bow compensating layer and methods of manufacture is disclosed. The method includes forming at least one layer of stressed material on a front side of a wafer handler. The method further includes forming another stressed material on a backside of the wafer handler which counter balances the at least one layer of stressed material on the front side of the wafer handler, thereby decreasing an overall bow of the wafer handler.

公开(公告)号：US09656860B2

公开(公告)日：2017-05-23

申请号：US15254828

申请日：2016-09-01

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Earl Vedere Atnip ,  Raul Enrique Barreto ,  Kelly J. Taylor

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00666 ,  B81B3/0072 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C1/00365 ,  B81C2201/0108 ,  B81C2201/0132 ,  B81C2201/0167 ,  B81C2201/0178

Abstract: In described examples, a MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.