公开(公告)号：US20030129446A1

公开(公告)日：2003-07-10

申请号：US10328880

申请日：2002-12-24

Applicant: MEMSCAP Le Parc Technologique des Fontaines

Inventor： Lionel Girardie

IPC: B32B003/00

CPC classification number: H01L21/28194 ,  C23C16/40 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31683 ,  H01L28/40 ,  H01L29/513 ,  H01L29/517

Abstract: Multilayer structure, used especially as a material of high relative permittivity, characterized in that it comprises a plurality of superposed elementary layers, each with a thickness of less than about 500 null, among which there are two layers based on an alloy of titanium dioxide (TiO2) and tantalum pentoxide (Ta2O5), these layers being separated by an interlayer of an alloy based on at least hafnium dioxide (HfO2) an alumina (Al2O3).

Abstract translation: 特别是作为高相对介电常数的材料使用的多层结构，其特征在于，它包括多个重叠的基本层，每个层厚度小于约500埃，其中有两层是基于二氧化钛合金 TiO 2）和五氧化二钽（Ta 2 O 5），这些层由基于至少二氧化铪（HfO 2），氧化铝（Al 2 O 3）的合金中间层分开。

公开(公告)号：US20030030527A1

公开(公告)日：2003-02-13

申请号：US10213928

申请日：2002-08-06

Applicant: MEMSCAP Parc Technologique des Fontaines

Inventor： Ahmed Mhani ,  Jean-Marc Fedeli

IPC: H01F021/06

CPC classification number: H03H9/02259 ,  H03H9/02377 ,  H03H2009/02496

Abstract: A microelectromechanical component (1) providing filtering functions, produced on a semiconductor-based substrate (10) and comprising two input terminals (7, 8) and two output terminals (26, 27), which also comprises: a metal input coil (2), connected to the input coils (7, 8) and capable of producing a magnetic field when a current flows through it; a movable element (3), connected to the substrate by at least one deformable portion and including at least one region (11, 12) made of a ferromagnetic material, said movable element (3) being capable of moving under the effect of the force, to which the region (11) made of a ferromagnetic material is subject, generated by the magnetic field produced by the input coil (2); an output member (4) forming a magnetic sensor, connected to the output terminals (26, 27) and capable of producing an electrical signal that can be varied according to the movement of the movable element (3).

Abstract translation: 一种提供过滤功能的微机电部件（1），其在基于半导体的基板（10）上产生并且包括两个输入端子（7,8）和两个输出端子（26,27），其还包括：金属输入线圈 ），连接到输入线圈（7,8），并且当电流流经时产生磁场; 可移动元件（3），其通过至少一个可变形部分连接到所述基板并且包括由铁磁材料制成的至少一个区域（11,12），所述可移动元件（3）能够在所述力的作用下移动 由铁磁材料制成的区域（11）由输入线圈（2）产生的磁场产生; 形成磁传感器的输出构件（4），连接到输出端子（26,27），并且能够产生可根据可移动元件（3）的移动而改变的电信号。

公开(公告)号：US20030027370A1

公开(公告)日：2003-02-06

申请号：US10205724

申请日：2002-07-26

Applicant: MEMSCAP(Societe Anonyme)

Inventor： Philippe Helin

IPC: H01L031/00 ,  H01L027/14 ,  H01L029/82 ,  H01L021/00

CPC classification number: G02B6/3584 ,  G02B6/266 ,  G02B6/3514 ,  G02B6/3546 ,  G02B6/357 ,  G02B26/0841 ,  G02B2006/12104

Abstract: Process for fabricating a microelectromechanical optical component (1) produced from a silicon substrate, comprising: optical propagation guides (2-5); a wall (6) which can move with respect to the propagation guides (2-5); and an electrostatic actuator (10) associated with return means formed by at least one beam (15, 16) which is capable of causing the moving wall (6) to move with respect to the rest of the substrate. According to the invention: the substrate used is made of single-crystal silicon, the (111) crystalographic planes of which are parallel to the plane of the substrate; the process comprises a first series of deep reactive ion etching steps during which the heights of the moving wall (6), of the electrodes of the actuator (11, 12), and of the beams (15, 16) of the return means of the actuator are defined with different values; and the process comprises a second wet etching step, making it possible to free the moving wall (6), the electrodes (11, 12) and the beams (15, 16) from the rest of the substrate

Abstract translation: 一种由硅衬底制造的微电子机械光学部件（1）的制造方法，包括：光学传播引导件（2-5）; 相对于传播引导件（2-5）移动的壁（6）; 以及与由至少一个梁（15,16）形成的返回装置相关联的静电致动器（10），其能够使所述移动壁（6）相对于所述基板的其余部分移动。 根据本发明：所使用的基板由单晶硅制成，（111）晶体平面平行于基板的平面; 该过程包括第一系列深反应离子蚀刻步骤，在该步骤期间，移动壁（6）的高度，致动器（11,12）的电极和返回装置的梁（15,16）的高度 致动器用不同的值定义; 并且该方法包括第二湿蚀刻步骤，使得可以将移动壁（6），电极（11,12）和光束（15,16）从基板的其余部分

公开(公告)号：US20020097975A1

公开(公告)日：2002-07-25

申请号：US10024682

申请日：2001-12-18

Applicant: MEMSCAP

Inventor： Arnaud Delpoux ,  Jean-Michel Karam ,  Marie-Ange Iannello ,  Nan Zhang ,  Gary Nault

IPC: G02B006/00 ,  G02B006/36

CPC classification number: G02B6/3636 ,  G02B6/3502 ,  G02B6/357 ,  G02B6/3584 ,  G02B6/3652

Abstract: Device allowing the end (4) of an optical fiber (3) to be positioned and held in place inside a substrate (1), wherein: the substrate (1) has a groove (2) intended to accommodate the end (4) of the optical fiber (3), said groove (2) possessing at least one plane wall (8) perpendicular to the principal plane (9) of the substrate (1); the groove (2) includes a moveable part (5), located on the face opposite the plane wall (8) and capable of moving toward said plane wall (8) between two positions, namely; a retracted position in which the end of the optical fiber (3) can penetrate freely into the groove (2); a locked position in which the moveable part (5) comes into contact with the optical fiber (3) in order to press it against said plane wall (8); it includes means (21, 24) allowing a force to be exerted on the moveable part (5) in order to cause it to move with respect to the plane wall (8)

Abstract translation: 允许光纤（3）的端部（4）被定位并保持在基板（1）内的位置的装置，其中：所述基板（1）具有用于容纳端部（4）的槽（2） 所述光纤（3），所述槽（2）具有垂直于所述基板（1）的主平面（9）的至少一个平面壁（8）; 所述槽（2）包括位于与所述平面壁（8）相对的表面上且能够在两个位置之间朝向所述平面壁（8）移动的可移动部分（5） 缩回位置，其中光纤（3）的端部可以自由地穿入凹槽（2）中; 其中可移动部分（5）与光纤（3）接触以便将其压靠在所述平面壁（8）上的锁定位置; 它包括允许力施加在可移动部分（5）上以使其相对于平面壁（8）移动的装置（21,24）

公开(公告)号：US20020050906A1

公开(公告)日：2002-05-02

申请号：US09870819

申请日：2001-05-31

Applicant: MEMSCAP, S.A.

Inventor： Jean-Marc Fedeli ,  Bertrand Guillon

IPC: H01F038/20

CPC classification number: H01F3/14 ,  H01F17/0006 ,  H01F17/0033 ,  H01F27/34

Abstract: Inductive microcomponent (1), such as a microinductor or microtransformer, comprising a metal winding (2) having the shape of a solenoid and a magnetic core (4) made of a ferromagnetic material positioned at the center of the solenoid (2), wherein the core (4) consists of several sections (13-16) separated by cutouts (17-19) oriented parallel to the main axis (20) of the solenoid (4).

Abstract translation: 包括具有螺线管形状的金属绕组（2）和位于螺线管（2）中心的铁磁材料制成的磁芯（4）的微电感器或微型变压器的感应微元件（1），其中 芯部（4）包括由平行于螺线管（4）的主轴线（20）定向的切口（17-19）分开的几个部分（13-16）。

公开(公告)号：JP2003309118A

公开(公告)日：2003-10-31

申请号：JP2002378528

申请日：2002-12-26

Applicant: Memscap ,  メムスカップ

Inventor： GIRARDIE LIONEL

IPC: H01G4/20 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01G4/33 ,  H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L21/28194 ,  C23C16/40 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31683 ,  H01L28/40 ,  H01L29/513 ,  H01L29/517

Abstract: PROBLEM TO BE SOLVED: To provide a substance having high voltage resistance and a low-level leak current together with a high usable relative permittivity in various capacitive structures. SOLUTION: A multi-layer structure contains a plurality of laminated basic layers each having a thickness less than 500 angstrom (Å), two layers based on an alloy of titanium oxide (TiO 2 ) and tantalum pentaoxide (Ta 2 O 5 ) exist in the layers, and are separated by an intermediate layer wherein these layers base at least hafnium dioxide (HfO 2 ) and alumina (Al 2 O 3 ). COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供具有高电压电阻和低电平漏电流以及各种电容结构中可用的相对介电常数高的物质。 解决方案：多层结构包含多个厚度小于500埃的叠层基层，基于二氧化钛合金（TiO 2 ）和 五氧化二钽（Ta 2 5 SB）存在于这些层中，并被中间层分离，其中这些层至少基于二氧化铪（HfO 2 SB 2， SB>）和氧化铝（Al 2 3 ）。 版权所有（C）2004，JPO

公开(公告)号：JP2003303896A

公开(公告)日：2003-10-24

申请号：JP2003076543

申请日：2003-03-19

Applicant: Memscap ,  メムスカップ

Inventor： GIRARDIE LIONEL

IPC: H01G4/33 ,  C23C16/40 ,  C23C16/44 ,  H01L21/28 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  H01L29/51

CPC classification number: C23C16/40 ,  H01L21/28167 ,  H01L21/31604 ,  H01L29/511

Abstract: PROBLEM TO BE SOLVED: To provide a capacitance structure which is formed on a final visible metallized level of an electronic component and has a capacitance value larger than a value which is usually observed.
SOLUTION: In the electronic microcomponent provided with a capacitance structure which is formed on a substrate and on the top of a metallized level existing in the substrate, the capacitance structure is provided with two electrodes. The first electrode is formed of a plurality of laminated metal lamellas which are isolated from each other by layers which are composed of the same metals and thinner than the lamellas. The second electrode overlaps with the first electrode by forming a plurality of lamellas which are sandwiched between the lamellas of the first electrode.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供在电子部件的最终可见金属化水平上形成的电容结构，其电容值大于通常观察到的值。 解决方案：在具有在基板上形成的电容结构和存在于基板中的金属化层的顶部的电子微元件中，电容结构设置有两个电极。 第一电极由多层叠金属薄片形成，层叠金属片由相同的金属构成并且比薄片薄的层隔开。 第二电极通过形成夹在第一电极的薄片之间的多个薄片与第一电极重叠。 版权所有（C）2004，JPO

公开(公告)号：JP2003234414A

公开(公告)日：2003-08-22

申请号：JP2002351667

申请日：2002-12-03

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL ,  DAVID JEAN-BAPTISTE

IPC: H01F17/00 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L23/52 ,  H01L27/04 ,  H01L27/08

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing an electronic component incorporated with a guidance micro component disposed on a substrate. SOLUTION: This component includes at least one laminate composed of a first layer (10) of a substance with a low relative dielectric constant, which is located on the upper surface of a substrate (1), and a hard mask layer, a multiplicity of metallic bent portions (39) formed on continuous layers (10, 10a) of a substance with a low relative dielectric constant, and a copper-diffused barrier layer (35), which exists on a low-lying surface and a side surface of the metallic bent portions (39). The substrate (1) is a semiconductor substrate, or a glass or quartz-type amorphous substrate for forming an integrated circuit. The substance with a low relative dielectric constant deposited on the substrate (1) is preferably benzocyclobutene. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003149568A

公开(公告)日：2003-05-21

申请号：JP2002222091

申请日：2002-07-30

Applicant: MEMSCAP

Inventor： HELIN PHILIPPE

IPC: B81B3/00 ,  B81C1/00 ,  G02B6/12 ,  G02B6/26 ,  G02B6/35 ,  G02B6/36 ,  G02B26/08

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a microelectromechanical optical component that is equipped with two optical transmission lines, a moving wall part, and an electrostatic actuator which is equipped with a plurality of electrodes made relatively movable and has one electrode mechanically connected to the moving wall part and the other electrode fixed to the remaining part of a substrate and further equipped with a return means formed of a beam part. SOLUTION: The (111) surface of single-crystal silicon forming the substrate is made parallel to a surface 20 of the substrate, the heights of the moving wall part 6, electrodes 11 and 12, and beam parts 15 and 16 are defined with different height values through a series of 1st deep reactive ion etching processes, and the moving wall part 6, electrodes 11 and 12, and beam parts 15 and 16 can be made free from the remaining part of the substrate through a 2nd wet etching process.

公开(公告)号：JP2002217060A

公开(公告)日：2002-08-02

申请号：JP2001352275

申请日：2001-11-16

Applicant: MEMSCAP

Inventor： GUILLON BERTRAND ,  BLONDY PIERRE

IPC: H01G7/00 ,  H01G5/00 ,  H01G5/06 ,  H01G5/16

Abstract: PROBLEM TO BE SOLVED: To provide a capacitor having a small amount of change in capacitance for the capacitor manufactured by the MEMS technique. SOLUTION: This microcomponent has a capacitive component. The capacitive component is composed by the continuous coupling of at least two capacitor elements (C1, C2, C3, and C4) that are successively connected. There are first and second plates (10) and (12) in each component. The first plate (10) is fixed to the other of the microcomponents. The second plate (12) includes a portion (19) that can deviate to the first fixed plate (10) by the effect of a control signal so that the value of the capacitance of the capacitor element C1 is changed. The control signal to the plurality of capacitor elements should be independently generated so that the entire capacitance of the capacitor is changed by independent change in the capacitance of each capacitor element.