41.
    发明专利
    未知

    公开(公告)号:DE1939811U

    公开(公告)日:1966-06-02

    申请号:DEST019578

    申请日:1966-01-19

    Applicant: STEGER ROBERT

    Inventor: STEGER ROBERT

    METHOD OF DETERMINING A TARGET MESA CONFIGURATION OF AN ELECTROSTATIC CHUCK
    42.
    发明申请
    METHOD OF DETERMINING A TARGET MESA CONFIGURATION OF AN ELECTROSTATIC CHUCK 审中-公开
    确定静电卡盘的目标MESA配置的方法

    公开(公告)号:WO2007064435A2

    公开(公告)日:2007-06-07

    申请号:PCT/US2006/042577

    申请日:2006-11-01

    Inventor: STEGER, Robert

    CPC classification number: H01L21/6875 H01L21/6831 Y10T29/49002

    Abstract: A method of modifying the heat transfer coefficient profile of an electrostatic chuck by configuring the areal density of a mesa configuration of an insulating layer of the chuck is provided. A method of modifying the capacitance profile of an electrostatic chuck by adjustment or initial fabrication of the height of a mesa configuration of an insulating layer of the chuck is further provided. The heat transfer coefficient at a given site can be measured by use of a heat flux probe, whereas the capacitance at a given site can be measured by use of a capacitance probe. The probes are placed on the insulating surface of the chuck and may include a plurality of mesas in a single measurement. A plurality of measurements made across the chuck provide a heat transfer coefficient profile or a capacitance profile, from which a target mesa areal density and a target mesa height are determined. The target density and height are achieved mechanically; the target density by mechanically adjusting the areal density of existing mesas; and the target height by creating or deepening low areas surrounding planned or existing mesas, respectively. This can be accomplished using any of known techniques for controlled material removal such as laser machining or grit blast machining on an X-Y table.

    Abstract translation: 提供了通过配置卡盘的绝缘层的台面构造的面密度来改变静电卡盘的传热系数分布的方法。 还提供了通过调整或初始制造卡盘的绝缘层的台面构造的高度来修改静电卡盘的电容分布的方法。 可以通过使用热通量探针来测量给定部位的传热系数,而可以通过使用电容探针来测量给定部位的电容。 探针被放置在卡盘的绝缘表面上,并且可以在单个测量中包括多个台面。 在卡盘上进行的多次测量提供传热系数分布或电容分布,从中确定目标台面面积密度和目标台面高度。 目标密度和高度机械地实现; 目标密度通过机械调节现有台面的面密度; 并分别通过创造或加深围绕计划的或现有台面的低地区来实现目标的高度。 这可以使用用于控制材料去除的已知技术来实现,例如在X-Y工作台上的激光加工或喷砂加工。

    METHOD AND APPARATUS FOR CONTROLLING SPATIAL TEMPERATURE DISTRIBUTION
    43.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING SPATIAL TEMPERATURE DISTRIBUTION 审中-公开
    用于控制空间温度分布的方法和装置

    公开(公告)号:WO2006068805A9

    公开(公告)日:2006-08-24

    申请号:PCT/US2005043801

    申请日:2005-12-01

    Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base is controlled in operation a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over at least a portion of the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or mounted to an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. The heater and flat support have a combined temperature rate change of at least 1°C per second.

    Abstract translation: 用于等离子体处理器的卡盘包括温度控制的基座,绝热体,平坦的支架和加热器。 温度控制的基座在工作温度下控制在低于工件所需温度的温度。 热绝缘体设置在温度受控基底的至少一部分上。 平面支撑件保持工件并且设置在绝热体上方。 加热器嵌入在平坦支撑件内和/或安装到平坦支撑件的下侧。 加热器包括加热多个相应的加热区域的多个加热元件。 每个加热元件的供电功率和/或温度独立地被控制。 加热器和平坦支架的组合温度变化率每秒至少为1°C。

    METHOD AND APPARATUS FOR CONTROLLING SPATIAL TEMPERATURE DISTRIBUTION
    44.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING SPATIAL TEMPERATURE DISTRIBUTION 审中-公开
    用于控制空间温度分布的方法和装置

    公开(公告)号:WO2006068805A1

    公开(公告)日:2006-06-29

    申请号:PCT/US2005/043801

    申请日:2005-12-01

    Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base is controlled in operation a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over at least a portion of the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or mounted to an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. The heater and flat support have a combined temperature rate change of at least 1°C per second.

    Abstract translation: 用于等离子体处理器的卡盘包括温度控制的基座,绝热体,平坦的支架和加热器。 温度控制的基座在工作温度下控制在低于工件所需温度的温度。 热绝缘体设置在温度受控基底的至少一部分上。 平面支撑件保持工件并且设置在绝热体上方。 加热器嵌入在平坦支撑件内和/或安装到平坦支撑件的下侧。 加热器包括加热多个相应的加热区域的多个加热元件。 每个加热元件的供电功率和/或温度独立地被控制。 加热器和平坦支架的组合温度变化率每秒至少为1°C。

    METHODS AND APPARATUS FOR IN SITU SUBSTRATE TEMPERATURE MONITORING
    45.
    发明申请
    METHODS AND APPARATUS FOR IN SITU SUBSTRATE TEMPERATURE MONITORING 审中-公开
    用于原位基板温度监测的方法和设备

    公开(公告)号:WO2005052995A2

    公开(公告)日:2005-06-09

    申请号:PCT/US2004/038287

    申请日:2004-11-15

    IPC: H01L

    CPC classification number: G01J5/0003 G01J5/0007

    Abstract: In a plasma processing system, a method of determining the temperature of a substrate is disclosed. The method includes positioning the substrate on a substrate support structure, wherein the substrate support includes a chuck. The method further includes creating a temperature calibration curve for the substrate, the temperature calibration curve being created by measuring at least a first substrate temperature with an electromagnetic measuring device, and measuring a first chuck temperature with a physical measuring device during a first isothermal state. The method also includes employing a measurement from the electromagnetic measurement device and the temperature calibration curve to determine a temperature of the substrate during plasma processing.

    Abstract translation: 在等离子体处理系统中,公开了一种确定基板温度的方法。 该方法包括将衬底定位在衬底支撑结构上,其中衬底支撑件包括卡盘。 该方法还包括为基板创建温度校准曲线,该温度校准曲线通过利用电磁测量装置测量至少第一基板温度来创建,并且在第一等温状态期间用物理测量装置测量第一卡盘温度。 该方法还包括使用来自电磁测量装置的测量结果和温度校准曲线来确定等离子体处理期间基板的温度。

    A METHOD AND APPARATUS FOR THE COMPENSATION OF EDGE RING WEAR IN A PLASMA PROCESSING CHAMBER
    46.
    发明申请
    A METHOD AND APPARATUS FOR THE COMPENSATION OF EDGE RING WEAR IN A PLASMA PROCESSING CHAMBER 审中-公开
    用于补偿等离子体加工室中边缘磨损的方法和装置

    公开(公告)号:WO2004027816A2

    公开(公告)日:2004-04-01

    申请号:PCT/US2003/029309

    申请日:2003-09-16

    CPC classification number: H01J37/32623 H01J37/32642

    Abstract: A method for processing a plurality of substrates in a plasma processing chamber of a plasma processing system, each of the substrate being disposed on a chuck and surrounded by an edge ring during the processing. The method includes processing a first substrate of the plurality of substrates in accordance to a given process recipe in the plasma processing chamber. The method further includes adjusting, thereafter, a capacitance value of a capacitance along a capacitive path between a plasma sheath in the plasma processing chamber and the chuck through the edge ring by a given value. The method additionally includes processing a second substrate of the plurality of substrates in accordance to the given process recipe in the plasma processing chamber after the adjusting, wherein the adjusting is performed without requiring a change in the edge ring.

    Abstract translation: 一种用于在等离子体处理系统的等离子体处理室中处理多个基板的方法,每个基板设置在卡盘上并且在处理期间被边缘环包围。 该方法包括根据等离子体处理室中的给定工艺配方来处理多个基板中的第一基板。 该方法还包括调整沿等离子体处理室中的等离子体护套之间的电容路径和通过边缘环的卡盘之间的电容的电容值给定值。 该方法另外包括在调整之后根据等离子体处理室中的给定工艺配方来处理多个基板中的第二基板,其中执行调整而不需要边缘环的改变。

    CORROSION RESISTANT COMPONENT OF SEMICONDUCTOR PROCESSING EQUIPMENT AND METHOD OF MANUFACTURING THEREOF
    47.
    发明申请
    CORROSION RESISTANT COMPONENT OF SEMICONDUCTOR PROCESSING EQUIPMENT AND METHOD OF MANUFACTURING THEREOF 审中-公开
    半导体加工设备的耐腐蚀性成分及其制造方法

    公开(公告)号:WO0100901A9

    公开(公告)日:2002-12-27

    申请号:PCT/US0040229

    申请日:2000-06-14

    CPC classification number: C23C28/321 C23C18/36 C23C28/00 C23C28/34 C23C28/345

    Abstract: A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a metal surface such as aluminum or aluminum alloy, stainless steel, or refractory metal coated with a phosphorus nickel plating and an outer ceramic coating such as alumina, silicon carbide, silicon nitride, boron carbide or aluminum nitride. The phosphorus nickel plating can be deposited by electroless plating and the ceramic coating can be deposited by thermal spraying. To promote adhesion of the ceramic coating, the phosphorus nickel plating can be subjected to a surface roughening treatment prior to depositing the ceramic coating.

    Abstract translation: 诸如等离子体室的半导体加工设备的耐腐蚀部件包括金属表面,例如铝或铝合金,不锈钢或涂覆有磷镍镀层的耐火金属和外部陶瓷涂层如氧化铝,碳化硅,氮化硅 ,碳化硼或氮化铝。 磷镀镍可以通过无电镀来沉积,陶瓷涂层可以通过热喷涂沉积。 为了促进陶瓷涂层的粘附,可以在沉积陶瓷涂层之前对磷镍镀层进行表面粗糙化处理。

    SWITCHED UNIFORMITY CONTROL
    48.
    发明申请
    SWITCHED UNIFORMITY CONTROL 审中-公开
    开关均匀性控制

    公开(公告)号:WO0203415A3

    公开(公告)日:2002-05-23

    申请号:PCT/US0118623

    申请日:2001-06-08

    CPC classification number: H01J37/321 H01J37/3244

    Abstract: A component delivery mechanism for distributing a component inside a process chamber is disclosed. The component is used to process a work piece within the process chamber. The component delivery mechanism includes a plurality of component outputs for outputting the component to a desired region of the process chamber. The component delivery mechanism further includes a spatial distribution switch coupled to the plurality of component outputs. The spatial distribution switch is arranged for directing the component to at least one of the plurality of component outputs. The component delivery mechanism also includes a single component source coupled to the spatial distribution switch. The single component source is arranged for supplying the component to the spatial distribution switch.

    Abstract translation: 公开了一种用于在处理室内分配组件的组件传送机构。 该部件用于处理加工室内的工件。 部件输送机构包括用于将部件输出到处理室的期望区域的多个部件输出。 部件传送机构还包括耦合到多个部件输出的空间分配开关。 空间分布开关被布置用于将部件引导到多个分量输出中的至少一个。 组件传送机构还包括耦合到空间分配开关的单个组件源。 单组分源被安排用于将组分提供给空间分布开关。

    SMART COMPONENT-BASED MANAGEMENT TECHNIQUES IN A SUBSTRATE PROCESSING SYSTEM
    49.
    发明申请
    SMART COMPONENT-BASED MANAGEMENT TECHNIQUES IN A SUBSTRATE PROCESSING SYSTEM 审中-公开
    基于组件的管理技术在基板处理系统中的应用

    公开(公告)号:WO2008017050A3

    公开(公告)日:2008-10-30

    申请号:PCT/US2007075113

    申请日:2007-08-02

    Abstract: A method of component management in a substrate processing system is disclosed. The substrate processing system has a set of components, at least a plurality of components of the set of components being designated to be smart components, each component of the plurality of components having an intelligent component enhancement (ICE). The method includes querying the plurality of components to request their respective unique identification data from their respective ICEs. The method further includes receiving unique identification data from the plurality of components if any of the plurality of components responds to the querying. The method additionally includes flagging the first component for corrective action if a first component of the plurality of components fails to provide first component unique identification data when the first component identification data is expected.

    Abstract translation: 公开了一种基板处理系统中的部件管理方法。 衬底处理系统具有一组组件,该组组件中的至少多个组件被指定为智能组件,多个组件的每个组件具有智能组件增强(ICE)。 该方法包括查询多个组件以从它们各自的ICE请求它们各自的唯一标识数据。 该方法还包括如果多个组件中的任何组件响应于查询,则从多个组件接收唯一的标识数据。 该方法另外包括:如果在预期第一组件识别数据时多个组件的第一组件不能提供第一组件唯一标识数据,则标记第一组件以用于校正动作。

    SMART COMPONENT-BASED MANAGEMENT TECHNIQUES IN A SUBSTRATE PROCESSING SYSTEM
    50.
    发明申请
    SMART COMPONENT-BASED MANAGEMENT TECHNIQUES IN A SUBSTRATE PROCESSING SYSTEM 审中-公开
    基于智能组件的基础处理系统管理技术

    公开(公告)号:WO2008017050A2

    公开(公告)日:2008-02-07

    申请号:PCT/US2007/075113

    申请日:2007-08-02

    Abstract: A method of component management in a substrate processing system is disclosed. The substrate processing system has a set of components, at least a plurality of components of the set of components being designated to be smart components, each component of the plurality of components having an intelligent component enhancement (ICE). The method includes querying the plurality of components to request their respective unique identification data from their respective ICEs. The method further includes receiving unique identification data from the plurality of components if any of the plurality of components responds to the querying. The method additionally includes flagging the first component for corrective action if a first component of the plurality of components fails to provide first component unique identification data when the first component identification data is expected.

    Abstract translation: 公开了一种衬底处理系统中的部件管理方法。 衬底处理系统具有一组组件,该组组件中的至少多个组件被指定为智能组件,该多个组件中的每个组件具有智能组件增强(ICE)。 该方法包括查询多个组件以从它们各自的ICE请求它们各自的唯一标识数据。 该方法还包括如果多个组件中的任何组件响应于查询,则从多个组件接收唯一标识数据。 该方法还包括如果多个部件中的第一部件在预期第一部件识别数据时未能提供第一部件唯一识别数据,则标记第一部件以进行纠正动作。

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