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公开(公告)号：KR1020100128151A
公开(公告)日：2010-12-07
申请号：KR1020090046622
申请日：2009-05-27
Applicant: (주)미래컴퍼니 , 고려대학교 산학협력단
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/18 , B23K26/36 , H01L31/04
Abstract: PURPOSE: A laser etching apparatus and an aperture forming method using the same are provided to form a gap pattern on a rear passivation layer through a further simplified process using the laser etching technology in stead of photo etching technology in the manufacturing process of thin solar battery of high efficiency. CONSTITUTION: A stage part(160) supports the silicon substrate of solar battery formed with the rear passivation layer. A laser generator(110) generates the laser beam adjusted according to the passivation information. A beam forming unit(130) modifies the size and the shape of a spot of the laser beam according to the size and the shape of the aperture.
Abstract translation: 目的：提供一种激光蚀刻装置和使用该激光蚀刻装置的孔形成方法，以便在薄的太阳能电池的制造过程中通过使用激光蚀刻技术代替光蚀刻技术的进一步简化的工艺在后钝化层上形成间隙图案 高效率。 构成：台架部分（160）支撑由后钝化层形成的太阳能电池的硅衬底。 激光发生器（110）产生根据钝化信息调节的激光束。 光束形成单元（130）根据孔径的大小和形状修改激光束的斑点的尺寸和形状。
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公开(公告)号：KR1020100012715A
公开(公告)日：2010-02-08
申请号：KR1020080074262
申请日：2008-07-29
Applicant: 고려대학교 산학협력단
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/04 , H01L31/18
Abstract: PURPOSE: A solar cell and a method for manufacturing the same are provided to improve the conductivity of an electrode by using a reflection barrier so that the metal electrode is not exposed to the outside. CONSTITUTION: A metal electrode(410) including a first and a second type is formed on a substrate(400). A paste including the first type impurity is laminated on the substrate. An emitter layer(440) containing the metal electrode and a first type impurity are formed in the substrate. The metal electrode is sintered. The reflection barrier layer is laminated on the substrate and the metal electrode. A first type impurity concentration of the emitter layer(440a) close to the metal electrode is higher than a first type impurity concentration of the emitter layer(440b) between the metal electrodes.
Abstract translation: 目的：提供太阳能电池及其制造方法，以通过使用反射屏障来提高电极的导电性，使得金属电极不暴露于外部。 构成：在基板（400）上形成包括第一和第二类型的金属电极（410）。 将包含第一种杂质的糊料层压在基材上。 在衬底中形成包含金属电极和第一类型杂质的发射极层（440）。 金属电极烧结。 反射阻挡层层叠在基板和金属电极上。 靠近金属电极的发射极层（440a）的第一种杂质浓度高于金属电极之间的发射极层（440b）的第一种杂质浓度。
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公开(公告)号：KR100850641B1
公开(公告)日：2008-08-07
申请号：KR1020070017633
申请日：2007-02-21
Applicant: 고려대학교 산학협력단
Abstract: A method of manufacturing a high efficient crystalline silicon solar cell is provided to prevent generation of interface defects from an interface between an emitter and a transparent conductive oxide layer. A second type silicon emitter layer(310) is formed on a first type crystalline base silicon layer(300). A buffer layer(320) is formed on the second type silicon emitter layer. A transparent conductive oxide layer(330) is formed on the buffer layer. An upper metal electrode line(340) is formed in a constant interval on the transparent conductive oxide layer. A lower metal electrode line(350) is formed on a rear surface of the base silicon substrate. The first type and second type are a p type and an n type or the n type and the p type.
Abstract translation: 提供一种制造高效晶体硅太阳能电池的方法，以防止从发射极和透明导电氧化物层之间的界面产生界面缺陷。 在第一类型的晶体基底硅层（300）上形成第二类型的硅发射极层（310）。 在第二型硅发射极层上形成缓冲层（320）。 在缓冲层上形成透明导电氧化物层（330）。 在透明导电氧化物层上以恒定的间隔形成上部金属电极线（340）。 在基底硅衬底的后表面上形成下部金属电极线（350）。 第一类型和第二类型是p型和n型或n型和p型。
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公开(公告)号：KR1020070060800A
公开(公告)日：2007-06-13
申请号：KR1020050120831
申请日：2005-12-09
Applicant: 고려대학교 산학협력단
IPC: H01L31/04 , H01L31/0216 , H01L31/18
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/04 , H01L31/0216 , H01L31/18
Abstract: An organic-inorganic hybrid solar cell and a method for preparing the same are provided to enhance optic transformation efficiency by increasing a contact area between an electron transporting material and a conductive polymer. A working electrode has a work function smaller than a work function of n-type CdTe. A plurality of CdTe complex nano-tubes(11) are arranged vertically on a metal electrode. The inside of the CdTe complex nano-tube is filled with a conductive polymer. The CdTe complex nano-tubes are dipped into an inside of an electro-polymerizing conductive polymer layer(13). The metal electrode is installed at an upper part of the electro-polymerizing conductive polymer layer. The metal electrode has the work function larger than the work function of the electro-polymerizing conductive polymer.
Abstract translation: 提供有机 - 无机混合太阳能电池及其制备方法，以通过增加电子传输材料和导电聚合物之间的接触面积来提高光学转换效率。 工作电极的功函数小于n型CdTe的功函数。 多个CdTe复合纳米管（11）垂直布置在金属电极上。 CdTe复合纳米管的内部填充有导电聚合物。 将CdTe复合纳米管浸入电聚合导电聚合物层（13）的内部。 金属电极安装在电聚合导电聚合物层的上部。 金属电极的功函数大于电聚合导电聚合物的功函数。
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公开(公告)号：KR102255573B1
公开(公告)日：2021-05-24
申请号：KR1020190104959
申请日：2019-08-27
Applicant: 고려대학교 산학협력단
IPC: H01L31/0475 , H01L31/0445 , H01L31/048 , H01L31/0224 , H01L31/0216 , H01L31/12 , H01L31/18
Abstract: 본발명의시인성이우수한태양전지모듈은투명기판; 상기투명기판내부에설치되어태양광을광전으로변환시키는박막의솔라셀; 로구성하되, 상기투명기판에수평배열로솔라셀을설치함을특징으로하는시인성이우수한태양전지모듈을제공한다.
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Patent Agency Ranking
公开(公告)号：KR20210020378A
公开(公告)日：2021-02-24
申请号：KR20190099585
申请日：2019-08-14
Applicant: 고려대학교 산학협력단
IPC: H01L31/0236 , H01L21/306 , H01L31/18
Abstract: 본발명은실리콘웨이퍼의습식이단계표면조직화방법에관한것으로서, Kerfless 방식으로제작된실리콘웨이퍼의표면에텍스쳐를형성하는방법에있어서, 습식세정용액을통해상기실리콘웨이퍼의표면을세정하는세정단계; 상기세정된실리콘웨이퍼를제 1 산용액에침지시켜표면에홀을형성하는전처리단계; 탈이온수를통해상기홀이형성된실리콘웨이퍼의표면을세척하는세척단계및 상기세척된실리콘웨이퍼를제 2 산용액에침지시켜표면에텍스쳐를형성하는식각단계를포함한다.
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公开(公告)号：KR101852237B1
公开(公告)日：2018-04-25
申请号：KR1020150068615
申请日：2015-05-18
Applicant: 고려대학교 산학협력단
IPC: H01L31/0465 , H01L31/042 , C01G23/04 , H01L31/046
CPC classification number: Y02E10/50
Abstract: 페로브스카이트태양전지모듈은제1 셀영역및 제2 셀영역으로구획된투명기판, 투명기판상에제1 및제2 셀영역들각각에형성되고, 투명전극, 페로브스카이트물질로이루어진흡수층및 흡수층으로부터정공이유입되는금속전극을각각구비하는제1 및제2 페로브스카이트태양전지셀들, 제1 페로브스카이트태양전지셀에포함된금속전극및 제2 페로브스카이트태양전지셀에포함된투명전극을상호연결시켜, 제1 및제2 페로브스카이트태양전지셀들을전기적으로연결시키는연결부및 연결부과흡수층사이에개재되어흡수층에형성된전자가연결부로이동되는것을억제하는션트억제막을포함한다.
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公开(公告)号：KR101814111B1
公开(公告)日：2018-01-02
申请号：KR1020110088323
申请日：2011-09-01
Applicant: 고려대학교 산학협력단
CPC classification number: Y02P70/521
Abstract: 본발명에서는리본스트링법으로실리콘웨이퍼를제조하는방법에있어서, 도가니에벌크(bulk) 상태의실리콘이용융된융액을공급하는단계; 상기도가니에스트링을통과시키고, 스트링사이에단결정실리콘시드층을용융된실리콘과접촉시키는단계; 상기스트링을끌어올려이동시켜스트링사이에리본결정을형성하는단계; 및상기형성된리본결정에서스트링을제거하는단계;를포함하는대면적의단결정실리콘웨이퍼제조방법이제공된다.
Abstract translation: 在本发明中，该方法包括在本体（本体）在用于制造硅晶片作为串带的制造方法的方法中，坩埚中的硅熔融液的熔融状态的供应; 将绳穿过坩埚并使单晶硅籽晶层与绳之间的熔融硅接触; 将琴弦向上拉，在弦之间形成带状晶体; 本发明还提供了一种制造具有大面积的单晶硅晶片的方法。
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公开(公告)号：KR1020160117770A
公开(公告)日：2016-10-11
申请号：KR1020150045138
申请日：2015-03-31
Applicant: 고려대학교 산학협력단
IPC: H01L31/18 , H01L31/04 , H01L31/0236 , H01L31/0256 , H01L31/0392
CPC classification number: Y02E10/50 , Y02P70/521
Abstract: PN 접합을이루는기판상에형성되는이중막패시베이션구조물은상기기판상에형성되며, 상기기판과의계면결함을억제하는진성비정질실리콘물질로이루어진제1 패시베이션박막및 상기제1 패시베이션박막상에형성되며, 캐리어의재결합을억제하는제2 배시베이션박막을포함한다. 이로써계면트랩밀도가감소되며, 고정전하효과가개선될수 있다.
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