公开(公告)号：KR1020080000687A

公开(公告)日：2008-01-02

申请号：KR1020077029779

申请日：1999-12-09

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오츠키하야시 ,  다다구니히로 ,  마츠세기미히로

IPC: H01L21/205 ,  H01L21/28

CPC classification number: C23C16/45514 ,  C23C16/34 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76871 ,  H01L23/485 ,  H01L27/10852 ,  H01L28/55 ,  H01L28/57 ,  H01L28/65 ,  H01L28/75 ,  H01L29/4966 ,  H01L29/513 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A TiSiN film of a barrier metal for a semiconductor device is formed by plasma CVD or thermal CVD to prevent diffusion of Cu. When the film is formed by thermal CVD, a TiCl4 gas, silane gas, and an NH3 gas are used as the source gas. When the film is formed by plasma CVD, a TiCl4 gas, a silane gas, an H2 gas, and an N2 gas are used as the source gas.

Abstract translation: 通过等离子体CVD或热CVD形成用于半导体器件的阻挡金属的TiSiN膜，以防止Cu的扩散。 当通过热CVD形成膜时，使用TiCl 4气体，硅烷气体和NH 3气体作为源气体。 当通过等离子体CVD形成膜时，使用TiCl 4气体，硅烷气体，H 2气体和N 2气体作为源气体。

公开(公告)号：KR1020070020110A

公开(公告)日：2007-02-16

申请号：KR1020070008620

申请日：2007-01-26

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오츠키하야시

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/45565 ,  C23C4/11 ,  C23C16/4404 ,  C23C16/45514 ,  C23C16/45561 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32495 ,  Y10T428/26

Abstract: A processing apparatus is provided to prolong the lifetime of a chamber structure by restraining the corrosion of a predetermined member of the chamber structure using a corrosion resistive layer made of Al2O3 and Y2O3. A processing apparatus includes a chamber(11) for holding a process object substrate, a bell jar at an upper portion of the chamber, an antenna for forming an induction field in the bell jar, an RF power source(66) for supplying an RF power to the antenna, and a gas supply unit(40) for supplying a process gas into the chamber. A corrosion resistive layer made of Al2O3 and Y2O3 is selectively formed in the chamber to prevent the generation of corrosion in the chamber.

Abstract translation: 提供一种处理装置，通过使用由Al 2 O 3和Y 2 O 3制成的耐腐蚀层来限制室结构的预定构件的腐蚀来延长室结构的寿命。 一种处理装置，包括用于保持处理对象基板的腔室（11），在室的上部的钟罩，在钟罩中形成感应场的天线; RF电源（66），用于提供RF 天线的功率，以及用于将处理气体供应到室中的气体供应单元（40）。 在室内选择性地形成由Al 2 O 3和Y 2 O 3制成的耐腐蚀层，以防止在室中产生腐蚀。

公开(公告)号：KR1020070020109A

公开(公告)日：2007-02-16

申请号：KR1020070008618

申请日：2007-01-26

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오츠키하야시

IPC: H01L21/205

CPC classification number: C23C16/45565 ,  C23C4/11 ,  C23C16/4404 ,  C23C16/45514 ,  C23C16/45561 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32495 ,  Y10T428/26

Abstract: A processing apparatus is provided to prolong the lifetime of a chamber by preventing the corrosion of the chamber due to plasma or a cleaning gas using a high corrosion resistive layer selectively coated on an inner wall of the chamber. A processing apparatus includes a process chamber(11) for holding a process object substrate and a processing mechanism for performing a predetermined treatment on the process object substrate of the process chamber. A predetermined layer(14) made of a corrosion resistive material is selectively formed on an inner surface of the process chamber.

Abstract translation: 提供了一种处理装置，以通过防止由于等离子体引起的室的腐蚀或使用选择性地涂覆在室的内壁上的高耐蚀性层的清洁气体来延长室的寿命。 处理装置包括用于保持处理对象基板的处理室（11）和用于对处理室的处理对象基板执行预定处理的处理机构。 在处理室的内表面上选择性地形成由耐腐蚀材料制成的预定层（14）。

公开(公告)号：KR100299569B1

公开(公告)日：2001-12-01

申请号：KR1019950001957

申请日：1995-02-03

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오츠키하야시

IPC: H01L21/205

Abstract: 알루미늄 전극의 표면에 양극산화에 의하여 알루마이트 피막을 형성함. 알루마이트 피막에 형성된 가느다란 구멍을 막는다. 이 후, 알루마이트 피막의 표면상에 질화실리콘막을 플라즈마 CVD 에 의하여 형성한다. 표면에 알루마이트 피막 및 질화실리콘막이 차례로 적층된 알루미늄 전극을 이용한 플라즈마 에칭 장치에 있어서, 프로세스 가스로서 HBr/HCl 가스를 이용하여 웨이퍼의 플라즈마에칭을 행한다. HBr/HCl로부터 발생한 활성래디컬은, 웨이퍼를 에칭함과 함께, 알루미늄 전극을 공격한다. 알루미늄 전극은, 질화실리콘막으로 보호되어 있기 때문에, 알루미늄의 바탕 및 알루마이트피막이 에칭되는 것이 방지된다. 이 때문에, 알루미늄의 바탕 및 알루마이트 피막중의 불순물이 플라즈마 에칭장치의 챔버내로 날아흩어지지 않는다. 이 결과, 웨이퍼가 불순물로 오염되는 것이 방지된다.

公开(公告)号：KR1020010007385A

公开(公告)日：2001-01-26

申请号：KR1020000032871

申请日：2000-06-15

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오츠키하야시 ,  마츠다츠카사 ,  이케다교코

IPC: G01N21/00

CPC classification number: H01L21/67253 ,  G01N1/24 ,  G01N15/06 ,  G01N2015/0693

Abstract: PURPOSE: A particle measure device and a method the same are provided to grasp a situation of particle generation with high correlation by counting the particle discharged from a process chamber. CONSTITUTION: An atmosphere is discharged from a process chamber(48) by a vacuum pump(98). A laser beam inspection unit inspects a laser beam in a discharge tube(90) to follow a segment which connects a central axis passing through the center of the process chamber(48) in up-and-down direction with a cross section central point of the discharge tube(90). A scattering light detection unit is prepared in a direction perpendicular to the direction of the laser beam inspection, and detects a scattering light from a particle.

Abstract translation: 目的：提供粒子测量装置及其方法，通过对从处理室排出的颗粒进行计数来掌握具有高相关性的颗粒产生的情况。 构成：通过真空泵（98）从处理室（48）排出气氛。 激光束检查单元检查放电管（90）中的激光束以沿着上下方向连接通过处理室（48）的中心的中心轴线的部分， 放电管（90）。 在与激光束检查的方向垂直的方向上制备散射光检测单元，并且检测来自颗粒的散射光。