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公开(公告)号：KR1020100111558A
公开(公告)日：2010-10-15
申请号：KR1020090030046
申请日：2009-04-07
Applicant: 삼성전기주식회사
Abstract: PURPOSE: A gas sensor is provided to enhance the bonding intensities between a gas sensitive material and a sensing electrode and between a sensing electrode and a substrate by the regular gaps between sensing electrodes. CONSTITUTION: A gas sensor comprises a sensitive member receiving part(10), sensing electrodes(20,25), and a gas sensitive member(30). A groove(12), which comprises surfaces on which a pair of electrodes are installed, is formed on the sensitive member receiving part. The sensing electrodes are installed on the surfaces of the groove to face each other. The gas sensitive member is held in the groove and is connected to the sensing electrodes. The gas sensitive member reacts with gas and changes an electrical property. The gas comprises nitrogen oxide. The sensing electrodes are formed by a thick film printing method.
Abstract translation: 目的：提供一种气体传感器，以通过感应电极之间的规则间隙增强气体敏感材料和感测电极之间以及感测电极和基板之间的结合强度。 构成：气体传感器包括敏感元件接收部分（10），感测电极（20,25）和气体敏感元件（30）。 在敏感元件接收部分上形成有包括其上安装有一对电极的表面的凹槽（12）。 感测电极安装在槽的表面上以彼此面对。 气体敏感部件保持在凹槽中并连接到感测电极。 气体敏感部件与气体反应并改变电气性能。 气体包括氮氧化物。 传感电极通过厚膜印刷法形成。
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公开(公告)号：KR1020100111076A
公开(公告)日：2010-10-14
申请号：KR1020090029459
申请日：2009-04-06
Applicant: 삼성전기주식회사
Abstract: PURPOSE: A gas sensor is provided to enhance the accuracy of a measurement since the gaps between the areas of a sensing electrode connected to a gas sensitive material are uniform. CONSTITUTION: A gas sensor comprises a base substrate(10), a pair of sensing electrodes(20), a cover member(30), and a gas sensitive member(40). The sensing electrodes are formed on the base substrate. The cover member covers up the base substrate. The cover member comprises a pair of windows, which comprise a pair of corners, arranged side by side so that the sensing electrodes are exposed and face each other. The gas sensitive member is connected to the sensing electrode and reacts to the gas and changes in an electrical property. The gas comprises nitrogen oxide.
Abstract translation: 目的：提供气体传感器以提高测量精度，因为连接到气体敏感材料的感测电极的区域之间的间隙是均匀的。 构成：气体传感器包括基底（10），一对感测电极（20），盖构件（30）和气体敏感构件（40）。 感测电极形成在基底基板上。 盖构件覆盖基底基板。 盖构件包括一对窗口，其包括一对并排布置的角部，使得感测电极暴露并彼此面对。 气体敏感元件连接到感测电极并与气体反应并改变电气性能。 气体包括氮氧化物。
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公开(公告)号：KR100872298B1
公开(公告)日：2008-12-05
申请号：KR1020070082812
申请日：2007-08-17
Applicant: 삼성전기주식회사
Abstract: The vertical structure semiconductor light emitting device and manufacturing method thereof are provided to flow effectively the current between the p electrode and the n electrode. The vertical structure semiconductor light emitting device(20) comprises the conductive board(25), the p-type semiconductor layer(23), the active layer(22), the n-type semiconductor layer(21), the N side electrode(26), the current constraining layer(27). The p-type semiconductor layer, the active layer and n-type semiconductor layer are successively formed on the conductive board. The N side electrode is formed on the n-type semiconductor layer. The current constraining layer is formed in the partial region of the interface between the n-type semiconductor layer and N side electrode. The current constraining layer comprises the material comprised N side electrode and the material forming the Schottky barrier.
Abstract translation: 提供垂直结构半导体发光器件及其制造方法，以有效地流动p电极和n电极之间的电流。 垂直结构半导体发光器件（20）包括导电板（25），p型半导体层（23），有源层（22），n型半导体层（21），N侧电极 26），当前约束层（27）。 p型半导体层，有源层和n型半导体层依次形成在导电板上。 N侧电极形成在n型半导体层上。 电流约束层形成在n型半导体层和N侧电极之间的界面的部分区域中。 目前的约束层包括由N侧电极和形成肖特基势垒的材料构成的材料。
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公开(公告)号：KR1020080079819A
公开(公告)日：2008-09-02
申请号：KR1020070020304
申请日：2007-02-28
Applicant: 삼성전기주식회사
Abstract: A method for fabricating a III-V group compound semiconductor is provided to secure a uniform impurity concentration distribution by supplying impurity metal to a III group metal source in advance. A III group metal source and a substrate are arranged in a source supplying region and a growing region of a reactive chamber(S11). The substrate and the III group metal source are heated, and then the III group metal source is melted(S12). Impurity metal element is supplied to allow the melted III group metal source to have a specific conductive property(S14). Chloride reactive gas is injected into the source supplying region to form a III group metal chloride containing the impurity metal element(S15). The III group metal chloride containing the impurity metal element and gas containing a V group element are supplied to the growing region(S16). The III group metal chloride containing the impurity metal element and the gas containing a V group element are reacted with each other to grow a III-V group compound semiconductor having the specific conductive property(S18).
Abstract translation: 提供了一种制备III-V族化合物半导体的方法，用于通过预先向III族金属源提供杂质金属来确保均匀的杂质浓度分布。 III族金属源和基板布置在反应室的源供应区域和生长区域中（S11）。 将基板和III族金属源加热，然后III族金属源熔化（S12）。 供给杂质金属元素以使熔融的III族金属源具有特定的导电性能（S14）。 将氯化物反应气体注入到源供应区域中以形成含有杂质金属元素的III族金属氯化物（S15）。 将含有杂质金属元素的III族金属氯化物和含有V族元素的气体供给生长区域（S16）。 含有杂质金属元素的III族金属氯化物和含有V族元素的气体彼此反应以生长具有特定导电性的III-V族化合物半导体（S18）。
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公开(公告)号：KR100838756B1
公开(公告)日：2008-06-17
申请号：KR1020070080506
申请日：2007-08-10
Applicant: 삼성전기주식회사
Abstract: A method for manufacturing a nitride-group semiconductor light emitting device is provided to improve an ohmic contact property by forming an ohmic contact layer using a local laser on a surface of an n-type gallium nitride layer. An n-type gallium nitride layer(120), an activation layer(130), and a p-type gallium nitride layer(140) are sequentially formed on a substrate(110). A portion of the p-type gallium nitride layer, the activation layer and the n-type gallium nitride layer is mesa-etched, such that a portion of an upper surface of the n-type gallium nitride layer is exposed. An ohmic metal layer is formed on the exposed n-type gallium nitride layer. An ohmic contact layer(200) is formed by irradiating a laser on the ohmic metal layer. An n-type electrode(170) is formed on the ohmic contact layer. A p-type electrode(150) is formed on the p-type gallium nitride layer.
Abstract translation: 提供了一种用于制造氮化物半导体发光器件的方法，以通过在n型氮化镓层的表面上使用局部激光形成欧姆接触层来改善欧姆接触特性。 在衬底（110）上依次形成n型氮化镓层（120），活化层（130）和p型氮化镓层（140）。 将p型氮化镓层，活化层和n型氮化镓层的一部分进行台面蚀刻，以使n型氮化镓层的上表面的一部分露出。 在暴露的n型氮化镓层上形成欧姆金属层。 通过在欧姆金属层上照射激光来形成欧姆接触层（200）。 在欧姆接触层上形成n型电极（170）。 p型电极（150）形成在p型氮化镓层上。
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Patent Agency Ranking
公开(公告)号：KR100691625B1
公开(公告)日：2007-03-12
申请号：KR1020060017458
申请日：2006-02-22
Applicant: 삼성전기주식회사
IPC: H01L21/3063
Abstract: A method for etching a III-group nitride-based semiconductor is provided to improve the state of an etched surface by varying the temperature of etchant in a reaction process for making a III-group nitride-based semiconductor come in contact with etchant. The surface of a III-group nitride-based semiconductor comes in contact with etchant(1) including the same III-group element as that of the semiconductor. While the semiconductor comes in contact with the etchant, the temperature of the etchant is increased at a uniform slope to etch the semiconductor at a temperature of 750~1200 deg.C. The etchant is separated from the surface of the semiconductor. The III-group nitride-based semiconductor can be GaN, and the etchant can be a Ga solution.
Abstract translation: 提供一种用于蚀刻III族氮化物基半导体的方法，以通过在用于使III族氮化物基半导体与蚀刻剂接触的反应过程中改变蚀刻剂的温度来改善蚀刻表面的状态。 III族氮化物基半导体的表面与包含与半导体相同的III族元素的蚀刻剂（1）接触。 当半导体与蚀刻剂接触时，蚀刻剂的温度以均匀斜率增加，以在750〜1200℃的温度蚀刻半导体。 蚀刻剂与半导体表面分离。 III族氮化物基半导体可以是GaN，并且蚀刻剂可以是Ga溶液。
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公开(公告)号：KR1020060035276A
公开(公告)日：2006-04-26
申请号：KR1020040084698
申请日：2004-10-22
Applicant: 삼성전기주식회사
Inventor： 김태형
Abstract: 본 발명은 휴대단말기의 하우징내에 구비된 안테나를 외부로 인출하고 내부로 인입하는 장치에 관한 것이다.
본 발명은 휴대단말기의 하우징에 구비되는 안테나를 자동 또는 수동으로 상기 하우징내부로 인입하거나 하우징외부로 인출하는 장치에 있어서, 상기 안테나의 외부면에 외주면이 외접하도록 상기 안테나와 원통몸체가 직교하도록 배치되는 구동롤러; 상기 구동롤러를 정,역방향으로 회전시키도록 상기 하우징에 구비되어 회전구동력을 제공하는 구동모터; 상기 안테나의 외부면과 상부면에 상기 구동롤러의 원통몸체내로 삽입되는 조립공을 관통형성하여 상기 원통몸체에 활주이동가능하게 조립되는 안테나지지판;및 상기 안테나지지판의 하부면과 상기 구동롤러의 후단사이에 구비되어 상기 안테나지지판의 상부면과 상기 안테나의 외부면이 접하도록 안테나지지판을 상기 안테나측으로 탄력지지하는 탄성부재;를 포함하여 구성된다.
본 발명에 의하면, 안테나와 롤러간의 마찰력을 증대시켜 안테나의 직선왕복운동을 자동및 수동모드에 관계없이 안정적으로 수행하고, 롤러의 사용수명을 연장할 수 있다.
안테나, 구동롤러, 구동모터, 안테나지지판, 탄성부재, 마찰력-
公开(公告)号：KR101224726B1
公开(公告)日：2013-01-21
申请号：KR1020100108180
申请日：2010-11-02
Applicant: 삼성전기주식회사
IPC: C04B35/468 , H01G4/12 , H01B3/12
Abstract: 본 발명은 고용량 적층 세라믹 콘덴서용 유전체 조성물의 제조방법에 관한 것으로서, 보다 상세하게는 유기 실란을 이용하여 유전체 분말의 표면을 개질함으로써 소결조제, 입성장억제제 및 희토류 원소와 같은 부성분의 분산성을 향상시켜 초박층을 형성할 수 있는 적층 세라믹 콘덴서용 유전체 조성물의 제조방법에 관한 것이다.
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公开(公告)号：KR1020120067570A
公开(公告)日：2012-06-26
申请号：KR1020100129046
申请日：2010-12-16
Applicant: 삼성전기주식회사
IPC: C23D9/06
CPC classification number: C04B35/64 , C04B2290/00
Abstract: PURPOSE: A heat treatment apparatus is provided to improve the yield of fine ceramic powder by maintaining high temperature and high pressure in a vessel for drying and processing ceramic slurry. CONSTITUTION: A heat treatment apparatus comprises a supply part(20) for supplying ceramic slurry(1) through a supply nozzle(21), a chamber(10) which rotates around a virtual rotational axis and thermally treats the ceramic slurry and has an inlet(11) through which the supply nozzle is inserted, and a sealing member(30) which is installed in the inlet to prevent fine powder from flowing out of the chamber.
Abstract translation: 目的：提供一种热处理装置，通过在容器中保持高温高压来使陶瓷浆料干燥和加工，提高细陶瓷粉末的产率。 构成：热处理装置包括用于通过供给喷嘴（21）供应陶瓷浆料（1）的供应部分（20），围绕虚拟旋转轴线旋转的室（10）并且热处理陶瓷浆料并具有入口 （11），以及密封构件（30），其安装在入口中以防止细粉流出室。
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公开(公告)号：KR1020120043348A
公开(公告)日：2012-05-04
申请号：KR1020100104607
申请日：2010-10-26
Applicant: 삼성전기주식회사
IPC: C01G23/00 , C04B35/468
Abstract: PURPOSE: A manufacturing method of barium titanate powder using a solid state reaction is provided to manufacture uniform sized barium titanate (BaTiO3) powder by adding ammonium compound as additive in order to control grain growth. CONSTITUTION: A manufacturing method of barium titanate powder using a solid phase method comprises a step of adding ammonium based compound while manufacturing mixed slurry of titanium oxide(TiO2) and barium carbonate(BaCO3). The ammonium based compound is included 0.5-10 wt% compared to solid content amount of barium carbonate (BaCO3) and titanium oxide(TiO2) within the mixed slurry. The ammonium based compound is more than one kind which is selected from ammonium carbonate, ammonia, ammonium sulfate, ammonium chloride, ammonium nitrate, phosphoric acid ammonium, and ammonia solution. A specific surface area of the barium carbonate is 20-50m/g and the specific surface area of the titanium oxide is 2-50m/g.
Abstract translation: 目的：提供使用固态反应的钛酸钡粉末的制造方法，通过添加铵化合物作为添加剂来制造均匀的钛酸钡（BaTiO 3）粉末，以控制晶粒生长。 构成：使用固相法的钛酸钡粉末的制造方法包括在制造氧化钛（TiO 2）和碳酸钡（BaCO 3）的混合浆料的同时添加铵类化合物的工序。 与混合浆料中的碳酸钡（BaCO 3）和氧化钛（TiO 2）的固体成分量相比，铵系化合物的含量为0.5〜10重量％。 铵基化合物是选自碳酸铵，氨，硫酸铵，氯化铵，硝酸铵，磷酸铵和氨溶液中的一种以上。 碳酸钡的比表面积为20-50m / g，氧化钛的比表面积为2-50m 2 / g。
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