公开(公告)号：KR100837280B1

公开(公告)日：2008-06-11

申请号：KR1020070024094

申请日：2007-03-12

Applicant: 삼성전자주식회사

Inventor： 박영수 ,  김영남 ,  임영삼 ,  김기정 ,  강필규

IPC: H01L21/00

CPC classification number: H01L21/3221 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11551 ,  H01L2924/00011 ,  H01L2224/80001

Abstract: A semiconductor device having a gettering region and a manufacturing method thereof are provided to improve integration density of the semiconductor device by minimizing a metal contamination of an IC formed on a semiconductor layer. A semiconductor device includes a semiconductor substrate(100), an insulation layer(150), a device semiconductor layer(200), and at least one gettering region(165). The insulation layer is arranged on the semiconductor substrate. The device semiconductor layer is arranged on the insulation layer. The gettering region includes plural sites for capturing metal elements in the device semiconductor layer. The gettering region is arranged in the insulation layer. The gettering region is arranged in a charge semiconductor pattern inside the insulation layer. The charge semiconductor pattern is contacted with a lower surface of the device semiconductor layer.

Abstract translation: 提供具有吸杂区域的半导体器件及其制造方法，以通过使形成在半导体层上的IC的金属污染最小化来提高半导体器件的集成密度。 半导体器件包括半导体衬底（100），绝缘层（150），器件半导体层（200）和至少一个吸杂区域（165）。 绝缘层设置在半导体衬底上。 器件半导体层布置在绝缘层上。 吸气区域包括用于捕获器件半导体层中的金属元素的多个位置。 吸气区域布置在绝缘层中。 吸气区域设置在绝缘层内部的电荷半导体图案中。 电荷半导体图案与器件半导体层的下表面接触。

公开(公告)号：KR1020080001859A

公开(公告)日：2008-01-04

申请号：KR1020060060275

申请日：2006-06-30

Applicant: 삼성전자주식회사

Inventor： 강홍규 ,  강동민 ,  김영남 ,  강대원 ,  임창수 ,  이춘득 ,  홍석민

IPC: H01L21/304

Abstract: A portable cleaning apparatus is provided to minimize an interval and a consumed quantity of deionized water for a cleaning process by not requiring the necessity of stopping the entire semiconductor fabricating apparatus. A cleaning solution for independently cleaning a semiconductor fabricating apparatus is stored in a cleaning solution supply part. A cleaning solution supplying pipe(101) and a cleaning solution collecting pipe(102) are detachably coupled to the semiconductor fabricating apparatus and are extended from the cleaning solution supply part. A supply pump supplies a cleaning solution to the semiconductor fabricating apparatus, and is installed in the supply pipe. A cleaning solution sensor(140) detects exhaustion of the cleaning solution and generates a signal for stopping a cleaning process, and is installed in the cleaning solution collecting pipe.

Abstract translation: 提供一种便携式清洁装置，用于通过不需要停止整个半导体制造装置来最小化用于清洁处理的去离子水的间隔和消耗量。 用于独立地清洁半导体制造装置的清洁溶液被存储在清洁溶液供应部分中。 清洁溶液供给管（101）和清洁液收集管（102）可拆卸地联接到半导体制造装置并从清洗溶液供应部分延伸。 供应泵向半导体制造装置提供清洁溶液，并且安装在供给管中。 清洁溶液传感器（140）检测清洗液的耗尽并产生停止清洗处理的信号，并安装在清洗液收集管中。

公开(公告)号：KR1020060124442A

公开(公告)日：2006-12-05

申请号：KR1020050046370

申请日：2005-05-31

Applicant: 삼성전자주식회사

Inventor： 김영남

IPC: H01L23/544

CPC classification number: H01L21/67282 ,  H01L21/265 ,  H01L21/683 ,  H01L22/26 ,  H01L23/544

Abstract: A label system for a semiconductor wafer is provided to very precisely check the label of a wafer even if a material layer is deposited on the wafer or CMP processes are performed, by forming a label on the wafer while using a magnetic material having magnetism. A label system for a wafer(W) includes a labeling part(100) for forming a characteristic label(150) on the wafer and a detecting part(200) for recognizing the label formed on the wafer. The labeling part includes a labeling chuck(110) into which the wafer is loaded and a labeling unit(120) for forming a label on the loaded wafer by using a magnetic material with magnetism. The labeling unit ion-implants the magnetic material into the wafer loaded into the labeling chuck to form the label.

Abstract translation: 提供用于半导体晶片的标签系统，以便即使通过在使用具有磁性的磁性材料的同时在晶片上形成标签，也可以在晶片上沉积材料层或进行CMP工艺来精确地检查晶片的标签。 用于晶片（W）的标签系统包括用于在晶片上形成特征标签（150）的标记部分（100）和用于识别形成在晶片上的标签的检测部分（200）。 标签部分包括加载晶片的标签卡盘（110）和用于通过使用具有磁性的磁性材料在加载的晶片上形成标签的标签单元（120）。 标记单元将磁性材料离子注入加载到标签卡盘中的晶片中以形成标签。

公开(公告)号：KR1020060075691A

公开(公告)日：2006-07-04

申请号：KR1020040114558

申请日：2004-12-29

Applicant: 삼성전자주식회사

Inventor： 전태승 ,  전상문 ,  김영남 ,  배종호

IPC: H01L21/66

CPC classification number: G01N21/956 ,  G01N21/8851 ,  G01N21/9501 ,  G01N2021/8854 ,  G01N2021/8893 ,  H01L22/12

Abstract: 효과적으로 결함들을 검사할 수 있는 결함 검사 방법에 따르면, 반도체 기판 상에 형성된 미세 구조물들을 영역별로 구획한 뒤, 반도체 기판을 스캐닝하여 미세 구조물들에 대한 영상 데이터를 획득한다. 영상 데이터로부터 반도체 기판 상의 결함을 검출하고, 검출된 결함을 영역별로 분류한다. 이 경우, 검출된 결함들에는 각각의 결함이 존재하는 영역 정보를 포함하는 영역 식별 부호가 부여된다. 각각의 결함에 부여된 영역 식별 부호를 기준으로 결함들을 분류한다. 따라서 반도체 기판 상의 결함들을 영역별로 분류하여 검사할 수 있으며, 이 결과, 검사 공정의 효율을 극대화 할 수 있으며, 최종적으로는 정밀한 반도체 장치를 제조할 수 있다.

公开(公告)号：KR1020030008451A

公开(公告)日：2003-01-29

申请号：KR1020010043101

申请日：2001-07-18

Applicant: 삼성전자주식회사

Inventor： 김영남

IPC: H01L21/027

Abstract: PURPOSE: A wafer baking apparatus having absorbing typed pins is provided to buffer a shock due to the external force and exchange easily the absorbing typed pins by using the absorbing typed pins. CONSTITUTION: A pin body(124) is formed with an elastic body in order to buffer impact applied from the outside. A plate(126) for fixing pin is formed at one end portion of the pin body(124) in order to fix a pin(120) to the plate(126) for fixing pin. A plurality of absorbing typed pins(120) are formed at the other end portion of the pin body(124). The absorbing typed pins(120) have caps(122). The caps(122) can be separated from the pin body(124) when the external force is applied to the pin body(124). A screw of the plate(126) for fixing pin is combined with a pin insertion hole(170) of a pin fixing plate(180).

Abstract translation: 目的：提供具有吸收型引脚的晶片烘烤设备，以通过外力来缓冲冲击，并通过使用吸收型引脚容易地更换吸收型引脚。 构成：针体（124）形成有弹性体，以缓冲从外部施加的冲击。 用于固定销的板（126）形成在销体（124）的一个端部处，以将销（120）固定到用于固定销的板（126）上。 多个吸收型销（120）形成在销体（124）的另一端部。 吸收型引脚（120）具有盖（122）。 当外力施加到销主体（124）时，盖（122）可以与销主体（124）分离。 用于固定销的板（126）的螺钉与销固定板（180）的销插入孔（170）组合。

公开(公告)号：KR1020020068191A

公开(公告)日：2002-08-27

申请号：KR1020010008480

申请日：2001-02-20

Applicant: 삼성전자주식회사

Inventor： 이상현 ,  김영남

IPC: H01L21/3205

CPC classification number: H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PURPOSE: A method for fabricating a semiconductor device having a multi interconnection is provided to prevent a crack, by maintaining an interval between adjacent patterns not smaller than a predetermined value or by forming a slit in the patterns, so that the stress between a metal interconnection and a layer under the metal interconnection is buffered. CONSTITUTION: An insulation layer is formed on a semiconductor substrate. A metal layer is formed on the insulation layer. The metal layer is patterned to form a plurality of metal interconnection patterns(41,42,43) while the patterns not smaller than a predetermined size maintain an interval not smaller than a predetermined size.

Abstract translation: 目的：提供一种制造具有多重互连的半导体器件的方法，以通过保持不小于预定值的相邻图案之间的间隔或通过在图案中形成狭缝来防止裂纹，使得金属互连 并且金属互连下的层被缓冲。 构成：在半导体衬底上形成绝缘层。 在绝缘层上形成金属层。 图案化金属层以形成多个金属互连图案（41,42,43），而不小于预定尺寸的图案保持不小于预定尺寸的间隔。

公开(公告)号：KR1020000073330A

公开(公告)日：2000-12-05

申请号：KR1019990016557

申请日：1999-05-10

Applicant: 삼성전자주식회사

Inventor： 김영남 ,  박석희 ,  김동영

IPC: H01L21/68

Abstract: PURPOSE: A wireless vacuum tweezer for processing a wafer is provided to eliminate the wafer regardless of a transfer distance of a vacuum tweezer, by forming the wireless vacuum tweezer for absorbing the wafer. CONSTITUTION: A wireless vacuum tweezer(20) for processing a wafer(25) comprises a vacuum chuck(22), a handle(24), a vacuum generation unit(26) and a vacuum switch(27). The vacuum chuck has a vacuum path(21) of a rectangular bar type, including a vacuum groove(23) connected to the vacuum path in the former end. The handle is established in the latter end of the vacuum chuck and can be grabbed by an operator. The vacuum generation apparatus is connected to the vacuum path of the vacuum chuck, established in the handle to absorb the wafer by forming vacuum in the vacuum groove of the vacuum chuck. The vacuum switch switches the vacuum path, established in the handle.

Abstract translation: 目的：提供一种用于处理晶片的无线真空镊子，通过形成用于吸收晶片的无线真空镊子，无论真空镊子的传送距离如何，以消除晶片。 构成：用于处理晶片（25）的无线真空镊子（20）包括真空吸盘（22），手柄（24），真空产生单元（26）和真空开关（27）。 真空吸盘具有矩形棒状的真空通路（21），包括在前端连接到真空通路的真空槽（23）。 手柄位于真空吸盘的后端，可由操作者抓住。 真空发生装置连接到真空吸盘的真空通道，建立在手柄中，通过在真空吸盘的真空槽中形成真空吸收晶片。 真空开关切换手柄中建立的真空路径。

公开(公告)号：KR1020000059314A

公开(公告)日：2000-10-05

申请号：KR1019990006797

申请日：1999-03-02

Applicant: 삼성전자주식회사

Inventor： 김영남 ,  이은구 ,  백두현

IPC: H01L21/28

Abstract: PURPOSE: A method of forming a silicide layer is to form a uniform silicide layer in an active region on a substrate, thereby lowering a junction leakage current. CONSTITUTION: A method of forming a silicide layer comprises the steps of: providing a substrate(10) having a silicon surface; forming a conductive metal layer on the surface of the silicon; forming a capping layer containing a titanium on the conductive metal layer; performing a rapid thermal process to react the surface of the silicon with the conductive metal layer, forming a metal silicide layer(17); removing the capping layer and the conductive metal layer; partially etching the metal silicide layer; and performing a rapid thermal process to form the metal silicide layer having a low resistance.

Abstract translation: 目的：形成硅化物层的方法是在衬底上的有源区中形成均匀的硅化物层，从而降低结漏电流。 构成：形成硅化物层的方法包括以下步骤：提供具有硅表面的衬底（10）; 在硅表面上形成导电金属层; 在所述导电金属层上形成含有钛的覆盖层; 执行快速热处理以使硅的表面与导电金属层反应，形成金属硅化物层（17）; 去除所述覆盖层和所述导电金属层; 部分蚀刻金属硅化物层; 并进行快速热处理以形成具有低电阻的金属硅化物层。

公开(公告)号：KR1020000019932A

公开(公告)日：2000-04-15

申请号：KR1019980038290

申请日：1998-09-16

Applicant: 삼성전자주식회사

Inventor： 양희석 ,  김영남 ,  황경환 ,  김정곤

IPC: H01L21/312

Abstract: PURPOSE: A method for preventing swelling of photoresist in semiconductor manufacturing process is provided to enhance the reaction feature of a photoresist by changing the surface status of a BPSG(boron phosphorus silicate glass) into hydrophobic feature. CONSTITUTION: A method for preventing swelling of photoresist in semiconductor manufacturing process comprises a step forming a BPSG film on a semiconductor substrate, a step reflowing the BPSG film under prescribed temperature, a step oxidizing the surface of the BPSG film, a step performing HMDS(hexamethyldisilane) treatment, and an etching step. The HMDS treatment is performed on the cleaned semiconductor substrate. The etching step is performed after coating a photoresist on the substrate.

Abstract translation: 目的：提供一种在半导体制造工艺中防止光致抗蚀剂膨胀的方法，以通过将BPSG（硼磷硅酸盐玻璃）的表面状态改变为疏水特征来增强光致抗蚀剂的反应特征。 构成：在半导体制造工艺中防止光致抗蚀剂膨胀的方法包括在半导体衬底上形成BPSG膜的步骤，在规定温度下回流BPSG膜的步骤，氧化BPSG膜的表面的步骤，执行HMDS（ 六甲基二硅烷）处理和蚀刻步骤。 在清洁的半导体衬底上进行HMDS处理。 蚀刻步骤是在基板上涂覆光致抗蚀剂之后进行的。

公开(公告)号：KR1020000013443A

公开(公告)日：2000-03-06

申请号：KR1019980032304

申请日：1998-08-08

Applicant: 삼성전자주식회사

Inventor： 양희석 ,  김영남 ,  황경환 ,  백두현

IPC: H01L21/31

Abstract: PURPOSE: Method to remove oxidation film in the salicide (self aligned silicide) process is provided which can solve the problem of an increase in surface resistance caused by oxidation film on the surface of silicide in the salicide process. CONSTITUTION: Silicide is formed by RTS (Rapid Thermal Silicidation) process (S10) and strip (S12). After strip, remove the oxidation film on the silicide with dry etching (S14) or wet etching. And the problem of an increase in surface resistance caused by the remaining oxidation film can be solved.

Abstract translation: 目的：提出在自对准硅化物工艺中去除氧化膜的方法，可以解决自杀化硅工艺中硅化物表面氧化膜引起的表面电阻增加的问题。 构成：通过RTS（快速热硅化）工艺（S10）和条（S12）形成硅化物。 剥离后，用干蚀刻（S14）或湿法蚀刻去除硅化物上的氧化膜。 并且可以解决由剩余的氧化膜引起的表面电阻增加的问题。