公开(公告)号：KR1020080004945A

公开(公告)日：2008-01-10

申请号：KR1020060063897

申请日：2006-07-07

Applicant: 삼성전자주식회사

Inventor： 지정근 ,  장원준 ,  이웅 ,  손호민 ,  이원준 ,  김형기 ,  박정현

IPC: H01L21/76 ,  H01L27/115 ,  H01L21/8247

CPC classification number: H01L21/76232 ,  H01L21/31144 ,  H01L21/67075

Abstract: A trench isolation method, a method for forming a gate structure, and a method for manufacturing a non-volatile memory device are provided to suppress a leakage current at an edge portion of an active region by forming an oxide film with a constant thickness on center and edge portions. A mask pattern is formed on a substrate(100). A pad oxide film pattern(114) and a nitride film pattern(110) are laminated on the mask pattern, which defines a first aperture. The first aperture partially exposes the substrate. A portion of a substrate, which is exposed by the pad oxide film pattern, is removed, such that a second aperture is formed. The second aperture is coupled with the first aperture. A sidewall of the second aperture has a first slope. The exposed substrate is etched by using the mask pattern as an etch mask, such that a trench is formed. The trench is coupled with the second aperture and has a second slope, which is greater than the first slope. The second slope is wider than the first slope. An insulation film is formed to completely fill in the first and second apertures and the trench.

Abstract translation: 提供沟槽隔离方法，形成栅极结构的方法和制造非易失性存储器件的方法，以通过在中心形成具有恒定厚度的氧化膜来抑制有源区的边缘部分的漏电流 和边缘部分。 在基板（100）上形成掩模图案。 衬垫氧化膜图案（114）和氮化物膜图案（110）层压在限定第一孔的掩模图案上。 第一孔部分地暴露基板。 去除由衬垫氧化膜图案曝光的衬底的一部分，使得形成第二孔。 第二孔与第一孔耦合。 第二孔的侧壁具有第一斜面。 通过使用掩模图案作为蚀刻掩模来蚀刻暴露的基板，从而形成沟槽。 沟槽与第二孔耦合并且具有大于第一斜率的第二斜率。 第二斜坡宽于第一斜坡。 形成绝缘膜以完全填充第一和第二孔和沟槽。

公开(公告)号：KR1020010046543A

公开(公告)日：2001-06-15

申请号：KR1019990050340

申请日：1999-11-12

Applicant: 삼성전자주식회사

Inventor： 김형기

IPC: H01L21/00

Abstract: PURPOSE: A vacuum system having an apparatus for cooling a vacuum pump is provided to prevent a vacuum pump from being continuously cooled by coolant when the vacuum pump stops, and to prevent the vacuum pump from being damaged by by-product which is adhered to the inside of the vacuum pump when the vacuum pump is over-cooled. CONSTITUTION: Coolant flows toward a vacuum pump(20) from the exterior through an inflow line. A block valve(28) intercepts the flow of the coolant flowing through the inflow line when the vacuum pump stops, installed in the inflow line. A mass flow controller(26) is installed in the inflow line between the vacuum pump and the block valve to control the quantity of coolant supplied to the vacuum pump.

Abstract translation: 目的：提供一种具有用于冷却真空泵的设备的真空系统，以防止当真空泵停止时真空泵被冷却剂连续冷却，并且防止真空泵被附着在副产品上的副产品损坏 当真空泵过冷时，真空泵内部。 构成：冷却液从外部通过流入线流向真空泵（20）。 当真空泵停止时，截止阀（28）拦截流过流入管线的冷却剂的流动，安装在流入管线中。 质量流量控制器（26）安装在真空泵和截止阀之间的流入管线中，以控制供应给真空泵的冷却剂的量。

公开(公告)号：KR1019980084307A

公开(公告)日：1998-12-05

申请号：KR1019970020060

申请日：1997-05-22

Applicant: 삼성전자주식회사

Inventor： 김형기

IPC: G06F3/02

Abstract: 키패드를 이용한 문자 입력 방법에 관한 것이다. 본 발명은 임의의 4개의 키를 추가로 구비하며, 그 추가된 키를 이용해 숫자키에 대응하는 복수의 문자를 개별적으로 입력한다. 따라서 본 발명은 문자 입력이 필요한 멀티미디어 관련 기기에 적용하여 보다 빠르고 간편하게 문자를 입력할 수 있는 효과를 제공한다.

公开(公告)号：KR1019950009888B1

公开(公告)日：1995-09-01

申请号：KR1019920014663

申请日：1992-08-14

Applicant: 삼성전자주식회사

Inventor： 최문희 ,  김형기 ,  정유석 ,  배용태

IPC: H01L21/76

Abstract: forming a first thermal oxide film(42) on a single crystalline silicon substrate(40); forming a photoresist(44) thereon, and forming a potoresist pattern to expose it to a light by a conventional photolithograpic process; etching the first thermal film(42) by dry etching, and removing the remained resist(44); forming an element isolating region(46) to selectively etch the substrate(40) by a reactive ion etching process, and removing the first thermal oxide film(42) by chemical etching process; forming a second thermal oxide film(48) over the surface; forming a first nitride film(50) thereon by a low pressure CVD; forming a BPSG(52) over the surface, and prefoming planarization under water vapor atmosphere; remaining the BPSG(52) to about 3000-5000 aug. thickness by etch back process; forming a oxide film(54) and a second nitride film(56) over the surface in turn; forming a insulating film(58) with good step coverage on the second nitride film(56) by plasma CVD process; and removing the second nitride film(56) by mechanical chemical polishing process, and preforming the insulating film(58); removing the second nitride film(56) and the thin oxide film(54) by chemical etching process. The nitride film and the CVD oxide film are completely insulated by automatic doping by B or P atoms in BPSG film. Accordingly the element isolating characteristic is improved.

Abstract translation: 在单晶硅衬底（40）上形成第一热氧化膜（42）; 在其上形成光致抗蚀剂（44），并通过常规的光刻工艺形成光致抗蚀剂图案以使其暴露于光下; 通过干蚀刻蚀刻第一热敏膜（42），并除去残留的抗蚀剂（44）; 形成元件隔离区域（46），以通过反应离子蚀刻工艺选择性地蚀刻衬底（40），并通过化学蚀刻工艺去除第一热氧化膜（42）; 在所述表面上形成第二热氧化膜（48）; 通过低压CVD在其上形成第一氮化物膜（50）; 在表面上形成BPSG（52），并在水蒸气气氛下预处理平面化; 剩下的BPSG（52）约为3000-5000 aug。 厚度通过回蚀处理; 依次在表面上形成氧化膜（54）和第二氮化物膜（56）; 通过等离子体CVD工艺在第二氮化物膜（56）上形成具有良好阶梯覆盖的绝缘膜（58）; 并通过机械化学抛光工艺去除第二氮化物膜（56），并预成型绝缘膜（58）。 通过化学蚀刻工艺去除第二氮化物膜（56）和薄氧化膜（54）。 氮化物膜和CVD氧化膜通过BPSG膜中的B或P原子的自动掺杂而完全绝缘。 因此，元件隔离特性得到改善。

公开(公告)号：KR1019950000657B1

公开(公告)日：1995-01-27

申请号：KR1019920001782

申请日：1992-02-07

Applicant: 삼성전자주식회사

Inventor： 강석희 ,  손춘배 ,  배찬호 ,  김형기

IPC: H01L21/28

Abstract: The method includes the steps of growing a thin oxide film (33 or 36) on a lower layer (32 or 38) i.e., a doped poly-Si layer (32) and a natural oxide film formed thereon, or an active layer (38) and a natural oxide film formed thereon, depositing a high melting point metal film (34 or 37), i.e., Ti film on the thermal oxide film (33 or 36), and heat-treating the film (34 or 37) to form a titanium silicide film, thereby isolating the lower layer from a silicide reaction interface to form a uniform silicide film without cohesive effect.

Abstract translation: 该方法包括以下步骤：在下层（32或38）上生长薄氧化膜（33或36），即，在其上形成的掺杂多晶硅层（32）和自然氧化膜，或活性层（38） ）和形成在其上的自然氧化膜，在热氧化膜（33或36）上沉积高熔点金属膜（34或37）即Ti膜，并对膜（34或37）进行热处理以形成 硅化钛膜，从而将下层与硅化物反应界面隔离，以形成均匀的硅化物膜，而没有内聚效应。

公开(公告)号：KR1020150102333A

公开(公告)日：2015-09-07

申请号：KR1020140024076

申请日：2014-02-28

Applicant: 삼성전자주식회사

Inventor： 김기석 ,  강희범 ,  김형기 ,  손호신 ,  우정연 ,  정우성 ,  최윤호

IPC: H04N21/433 ,  H04N5/76

CPC classification number: H04N21/44004 ,  H04N21/42607 ,  H04N21/4331

Abstract: 본 발명에 따른 방송신호수신장치는 영상 표시를 위한 데이터의 스트림을 포함하는 방송신호를 수신하는 신호수신부와; 수신된 방송신호의 스트림을 저장하는 버퍼부와; 버퍼부와, 스트림의 재생을 위한 저장 공간을 가지는 비휘발성의 저장장치를 인터페이스하는 인터페이스부와; 버퍼부로부터 스트림의 저장정보를 수신하고, 수신한 저장정보에 기초하여 버퍼부로부터 스트림을 수신하여 저장장치에 저장하도록 인터페이스부를 제어하는 제어부를 포함한다.
이에 따라, 방송신호의 스트림을 저장함에 있어, 수신된 방송신호의 스트림을 버퍼부에 저장하고, 버퍼부로부터 수신한 저장정보에 기초하여 저장된 스트림을 수신하여 저장장치에 저장하도록 인터페이스부를 제어하는 방송신호수신장치를 제공할 수 있다.

Abstract translation: 根据本发明的广播信号接收装置包括信号接收单元，其接收包括用于显示图像的数据流的广播信号，存储所接收的广播信号的流的缓冲单元，接收缓冲器的接口单元 具有用于再现流的存储空间的非易失性存储装置，以及控制单元，其从缓冲单元接收流的存储信息，并且控制接口单元通过接收来自所述流的流来存储流 基于接收到的存储信息的缓冲单元。 因此，提供了将接收到的广播信号的流存储在缓冲单元中的广播信号接收装置，并且通过基于从缓冲器单元接收的存储信息来接收存储的流量来控制接口单元将流存储在存储装置中 当广播信号的流被存储时。

公开(公告)号：KR100897288B1

公开(公告)日：2009-05-14

申请号：KR1020060102580

申请日：2006-10-20

Applicant: 삼성전자주식회사

Inventor： 손호민 ,  장원준 ,  형용우 ,  지정근 ,  김형기

IPC: H01L21/8247 ,  H01L27/115

CPC classification number: H01L29/7881 ,  H01L21/28273 ,  H01L29/42324 ,  H01L29/513 ,  H01L29/66825

Abstract: 비휘발성 메모리 소자 및 그 형성방법이 제공된다. 상기 비휘발성 메모리 소자의 형성방법은 반도체 기판 상에 터널링 절연막을 형성하는 것 그리고 플루오르를 포함하는 플라즈마 공정을 진행하는 것을 포함한다.
플라즈마 공정, 터널링 절연 패턴, 층간 절연 패턴, 신뢰성

公开(公告)号：KR1020080035917A

公开(公告)日：2008-04-24

申请号：KR1020060102580

申请日：2006-10-20

Applicant: 삼성전자주식회사

Inventor： 손호민 ,  장원준 ,  형용우 ,  지정근 ,  김형기

IPC: H01L21/8247 ,  H01L27/115

CPC classification number: H01L29/7881 ,  H01L21/28273 ,  H01L29/42324 ,  H01L29/513 ,  H01L29/66825 ,  H01L21/0212

Abstract: A nonvolatile memory device and a method for fabricating the same are provided to reduce a silicon-hydrogen combination and a dangling bond of an interface between a tunneling insulating layer and a semiconductor substrate by using F contained in the interface. A tunneling insulating pattern(110a) is formed on a semiconductor substrate(100). A charge storing pattern(120a) is formed on the tunneling insulating pattern. An interlayer dielectric pattern(130a) is formed on the charge storing pattern. A gate electrode(140a) is formed on the interlayer dielectric pattern. An interface between the semiconductor substrate and the tunneling insulating pattern contains F. The interlayer dielectric pattern includes a first oxide layer pattern on the charge storing pattern, a nitride layer pattern on the first oxide layer pattern, and a second oxide layer pattern on the nitride layer pattern. F is contained in interfaces between the nitride layer pattern and the first oxide layer pattern, between the first oxide layer pattern and the nitride layer pattern, and between the nitride pattern and the second oxide layer pattern.

Abstract translation: 提供一种非易失性存储器件及其制造方法，通过使用包含在界面中的F来减少隧道绝缘层和半导体衬底之间的界面的硅 - 氢组合和悬挂键。 隧道绝缘图案（110a）形成在半导体衬底（100）上。 在隧道绝缘图案上形成电荷存储图案（120a）。 在电荷存储图案上形成层间电介质图案（130a）。 在层间电介质图案上形成栅电极（140a）。 半导体衬底和隧道绝缘图案之间的界面包含F.层间介质图案包括电荷存储图案上的第一氧化物层图案，第一氧化物层图案上的氮化物层图案和氮化物上的第二氧化物层图案 层图案。 F包含在氮化物层图案和第一氧化物层图案之间，第一氧化物层图案和氮化物层图案之间以及氮化物图案和第二氧化物层图案之间的界面中。

公开(公告)号：KR100294889B1

公开(公告)日：2001-07-12

申请号：KR1019990023122

申请日：1999-06-19

Applicant: 삼성전자주식회사

Inventor： 이진우 ,  김형기 ,  김종대 ,  김윤수

IPC: G06F13/00

CPC classification number: G06F3/0664 ,  G06F3/0605 ,  G06F3/0661 ,  G06F3/0679

Abstract: 호스트장치의파일시스템과접속되어저장장치를공유하는슬레이브장치와, 호스트장치와슬레이브장치사이의데이터공유방법이개시된다. 본슬레이브장치는저장장치를구비하고소정의연결수단에의하여호스트장치와접속되는슬레이브장치에있어서, 저장장치의적어도일부가호스트장치의저장장치로동작하도록소정의프로토콜에따라호스트장치의파일시스템과접속을수행하는매체구동부를포함하는것을특징으로한다. 본발명에따르면, 호스트장치의범용애플리케이션프로그램상에서슬레이브장치내의저장장치가호스트장치의저장장치로동작하게되므로, 호스트장치와슬레이브장치가슬레이브장치의저장장치의적어도일부를범용애플리케이션을사용하여공유하는것이가능하다.

公开(公告)号：KR1020010003013A

公开(公告)日：2001-01-15

申请号：KR1019990023122

申请日：1999-06-19

Applicant: 삼성전자주식회사

Inventor： 이진우 ,  김형기 ,  김종대 ,  김윤수

IPC: G06F13/00

CPC classification number: G06F3/0664 ,  G06F3/0605 ,  G06F3/0661 ,  G06F3/0679

Abstract: PURPOSE: A slave device and a method for sharing data are provided to share data of a host and a memory by using a common application program of a slave device having the memory. CONSTITUTION: A control/error correction unit(36) controls a memory in a medium driver(224a) of a slave device and corrects an error. A protocol is in a file system(204a) of the host connected with the slave device. The protocol includes a control/error correction unit(30), an L-P(logical to physical) converter(32) and a file system driver(34). The L-P converts logical position data of the file system into physical position data. The file system driver abstracts plural application programs to access data in the memory with the logical position data. The control/error connection unit of the slave device is connected with the other one(30) of the host logically by the predetermined protocol. Therefore, the data through the control/error correction unit of the slave device are transferred to the application programs via the control/error correction unit of the host, L-P converter and file system driver.

Abstract translation: 目的：通过使用具有存储器的从设备的公共应用程序，提供从设备和用于共享数据的方法来共享主机和存储器的数据。 构成：控制/纠错单元（36）控制从设备的介质驱动器（224a）中的存储器并校正错误。 协议位于与从设备连接的主机的文件系统（204a）中。 该协议包括控制/纠错单元（30），L-P（逻辑到物理）转换器（32）和文件系统驱动器（34）。 L-P将文件系统的逻辑位置数据转换为物理位置数据。 文件系统驱动程序使用逻辑位置数据抽象多个应用程序来访问存储器中的数据。 从设备的控制/错误连接单元通过预定协议逻辑地与主机的另一个（30）连接。 因此，通过主机L-P转换器和文件系统驱动器的控制/纠错单元将从设备的控制/纠错单元的数据传送到应用程序。