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公开(公告)号：KR1020050079860A
公开(公告)日：2005-08-11
申请号：KR1020040008174
申请日：2004-02-07
Applicant: 삼성전자주식회사
Inventor： 톨마체프유리 , 마동준 , 김대일 , 나발라세르기야고블레비키
IPC: H01L21/02
CPC classification number: H01J37/32247 , H01J37/32192
Abstract: 다중 개방형 공진기(multiple open end resonant cavity)를 사용하여 마이크로 웨이브 플라즈마를 발생하는 장치 및 이를 이용한 플라즈마 공정장치가 개시된다. 개시된 장치는 공정챔버를 형성하기 위한 컨테이너, 공정챔버 내부에 피처리물을 지지하는 지지부, 공정챔버의 상부에 형성된 유전체 윈도우, 공정챔버 내부에 가스를 주입하기 위한 가스 주입장치 및 유전체 윈도우 상에 마이크로 웨이브를 인가하기 위한 다수의 개방형 공진기를 구비하는 마이크로 웨이브 공급부를 포함한다. 따라서, 처리하고자 하는 기판의 크기가 넓은 경우에도, 다수의 링형의 개방형 공진기를 이용하여 넓은 영역에 걸쳐서 플라즈마를 균일하게 형성할 수 있는 효과가 있다.
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公开(公告)号：KR1020050011315A
公开(公告)日：2005-01-29
申请号：KR1020030050343
申请日：2003-07-22
Applicant: 삼성전자주식회사
IPC: C23C14/35
CPC classification number: C23C14/35 , C23C14/165
Abstract: PURPOSE: To provide a plasma metal ion deposition apparatus capable of reducing the number of particles generated on a substrate during the deposition process and reducing thermal shock of the substrate generated from equipment that uses a RF coil formed by coiling a coil for several times. CONSTITUTION: The plasma metal ion deposition apparatus comprises a chamber(10); a substrate holder(21) installed at one side in the chamber; a RF magnetic field generation part(40) disposed oppositely to the substrate holder inside the chamber; a target base(30) disposed in such a shape that the target base encircles the circumference of the RF magnetic field generation part; and a static magnetic force line forming part for forming a magnetic force line passing through the target base, wherein the RF magnetic field generation part comprises a ring shaped RF coil(41), and a base(42) for supporting the ring shaped RF coil, wherein the static magnetic force line forming part comprises a first permanent magnet(71) of the target base, and a second permanent magnet(72) at the upper outer part of the target(50), and the first and second permanent magnets form a magnetic force line passing through the target base, and wherein the apparatus further comprises a first cooler(31) installed at the bottom of the target base, a second cooler(60) installed around the target base in such a way that the second cooler encircles an upper part of the target base to a certain height.
Abstract translation: 目的：提供一种等离子体金属离子沉积设备，其能够减少在沉积过程中在基板上产生的颗粒数量，并减少由使用通过卷绕线圈形成的RF线圈多次的设备产生的基板的热冲击。 构成：等离子体金属离子沉积装置包括室（10）; 衬底保持器（21），其安装在所述腔室的一侧; 与所述室内的所述基板保持件相对设置的RF磁场产生部（40） 目标基座（30），其设置成使得所述目标基部环绕所述RF磁场产生部的周围; 以及用于形成通过所述靶基体的磁力线的静磁力线形成部，其中，所述RF磁场产生部包括环形RF线圈（41）和用于支撑所述环形RF线圈的基座（42） ，其中所述静磁力线形成部分包括所述靶基体的第一永磁体（71）和所述靶（50）的上外部的第二永磁体（72），并且所述第一和第二永磁体形成 穿过所述目标基座的磁力线，并且其中所述装置还包括安装在所述目标基座的底部的第一冷却器（31），安装在所述目标基座周围的第二冷却器（60），使得所述第二冷却器 将目标基座的上部环绕到一定高度。
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公开(公告)号：KR1020050000727A
公开(公告)日：2005-01-06
申请号：KR1020030041225
申请日：2003-06-24
Applicant: 삼성전자주식회사
Inventor： 톨마체프유리 , 나발라세르기야고블레비키 , 마동준 , 김대일
IPC: H01L21/205
CPC classification number: H01J37/32211 , H01J37/321
Abstract: PURPOSE: A high density plasma processing apparatus is provided to improve the uniformity of plasma distribution even on a large wafer by using independently controllable ICP(Inductively Coupled Plasma) and microwave sources. CONSTITUTION: A high density plasma processing apparatus includes a process chamber(110) with a susceptor(112) and a dielectric window, a reaction gas injector, an ICP antenna, a waveguide and a ring type radiation line. The reaction gas injector injects a reaction gas into the chamber. The ICP antenna(130) for transmitting RF(Radio Frequency) power from an RF power supply(132) into the chamber is arranged to correspond to a center portion of the chamber on the dielectric window. The waveguide(142) transmits microwaves oscillating from a microwave oscillator(140). The radiation line(146) for radiating the microwaves into the chamber through slots of its backside is connected with the waveguide on the dielectric window and arranged to enclose the ICP antenna.
Abstract translation: 目的：提供高密度等离子体处理装置，通过使用独立可控的ICP（电感耦合等离子体）和微波源，即使在大晶片上也能提高等离子体分布的均匀性。 构成：高密度等离子体处理装置包括具有基座（112）和电介质窗口的处理室（110），反应气体注入器，ICP天线，波导管和环形辐射线。 反应气体喷射器将反应气体注入到室中。 用于将RF（射频）功率从RF电源（132）发送到室中的ICP天线（130）被布置成对应于电介质窗口上的室的中心部分。 波导（142）发射从微波振荡器（140）振荡的微波。 用于通过其背面的槽将微波辐射到室中的辐射线（146）与电介质窗口上的波导连接并且被布置成包围ICP天线。
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公开(公告)号：KR1020040062846A
公开(公告)日：2004-07-09
申请号：KR1020030000380
申请日：2003-01-03
Applicant: 삼성전자주식회사
IPC: H05H1/26
CPC classification number: H01J37/321
Abstract: PURPOSE: An inductively coupled antenna and a plasma processing system using the same are provided to improve the plasma uniformity within a reaction chamber by increasing the intensity of the current applied to outside turns of coils. CONSTITUTION: An inductively coupled antenna is formed with coils. The intensity of the current applied to outside turns of the coils is larger than the intensity of the current applied to center turns of the coils. The outside turns and the center turns of the coils are connected in parallel to an RF power supply. The center turns of the coils are connected serially to each other. The total length of the center turns of the coils is longer than the total length of the outside turns of the coils. The inductively coupled antenna includes a conductive metal tube(121) having a cooling water path(122) and a conductive metal strip(123).
Abstract translation: 目的：提供电感耦合天线和使用其的等离子体处理系统，以通过增加施加到线圈外圈的电流的强度来改善反应室内的等离子体均匀性。 构成：电感耦合天线用线圈形成。 施加到线圈的外圈的电流的强度大于施加到线圈的中心匝数的电流的强度。 外部转弯，线圈的中心匝与RF电源并联连接。 线圈的中心匝彼此串联连接。 线圈的中心匝数的总长度大于线圈外圈的总长度。 电感耦合天线包括具有冷却水路径（122）和导电金属带（123）的导电金属管（121）。
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公开(公告)号：KR100287115B1
公开(公告)日：2001-09-17
申请号：KR1019940021455
申请日：1994-08-29
Applicant: 삼성전자주식회사
Inventor： 마동준
IPC: H01S3/10
Abstract: PURPOSE: A fixing jig for KTP(KTiOPO4) element for SHG(second harmonic generation) is provided to minimize the reflectance of Nd;YAG laser incident to a KTP crystal surface and maintain constant resonance length by maintaining a surface cut perpendicularly to an initial phase matching direction of the KTP element until the machining is completed, thereby enhancing the power and efficiency of the SHG. CONSTITUTION: Guide bars(3) are mounted on both sides of a lower supporter(2) which screw holes(1) for fixing a jig are penetrated into. A pressing piece(4) is coupled to be lifted to the guide bars(4), and several recesses(4a) for seating the KTP element(5) are formed on a bottom surface of the pressing piece(4). An upper supporter(6) is fixed to top ends of the guide bars(3) to press the element(5) positioned between the pressing piece(4) and the lower supporter(2).
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Patent Agency Ranking
公开(公告)号：KR101648867B1
公开(公告)日：2016-08-17
申请号：KR1020090048652
申请日：2009-06-02
Applicant: 삼성전자주식회사
IPC: H01L21/208
CPC classification number: C23C18/122 , C23C18/1254 , C23C18/14 , H01L21/288 , H01L31/182 , Y02E10/546 , Y02P70/521
Abstract: 실리콘용액프로세스를이용한실리콘막제조방법이개시된다. 실리콘막제조방법에있어서, 저온공정으로두께에제한이없는실리콘막제조방법을제공한다.
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公开(公告)号：KR101611410B1
公开(公告)日：2016-04-11
申请号：KR1020090029882
申请日：2009-04-07
Applicant: 삼성전자주식회사
CPC classification number: H05B3/145 , H05B2214/04
Abstract: 그래핀의제조방법에대해개시된다. 개시된그래핀의제조방법은기판상에탄소함유물질을정렬시키고, 어닐링을실시하여그래핀을제조할수 있으며, 매우간단한공정으로대면적고품질의그래핀을제공할수 있다.
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公开(公告)号：KR101573697B1
公开(公告)日：2015-12-02
申请号：KR1020090011207
申请日：2009-02-11
Applicant: 삼성전자주식회사
IPC: H01L21/8247 , H01L27/115
CPC classification number: H01L27/11578 , G11C16/0483 , H01L27/11551 , H01L27/11556 , H01L27/11582
Abstract: 수직폴딩구조의비휘발성메모리소자및 그제조방법이제공된다. 반도체구조물은기판상의바닥부및 상기바닥부로부터상기기판상으로수직신장하는제 1 및제 2 측벽부들을포함한다. 복수의메모리셀들은상기반도체구조물의상기제 1 및제 2 측벽부들을따라서이격배치되고, 서로직렬로연결된다.
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公开(公告)号：KR100988085B1
公开(公告)日：2010-10-18
申请号：KR1020030041225
申请日：2003-06-24
Applicant: 삼성전자주식회사
Inventor： 톨마체프유리 , 나발라세르기야고블레비키 , 마동준 , 김대일
IPC: H01L21/205
CPC classification number: H01J37/32211 , H01J37/321
Abstract: 고밀도 플라즈마 처리 장치가 개시된다. 개시된 플라즈마 처리 장치는, 내부에는 피처리물을 지지하는 서셉터가 마련되고, 상부에는 유전체 윈도우가 설치된 공정챔버와; 공정챔버 내부에 반응가스를 주입하기 위한 반응가스 주입장치와; 유전체 윈도우의 상부에 설치되며, 공정챔버의 중심부에 대응하는 위치에 배치되어 RF 전원으로부터 공정챔버 내부로 RF 파우어를 전송하는 ICP 안테나와; 마이크로파 발진기에서 발진된 마이크로파를 전송하는 도파관과; 유전체 윈도우의 상부에 설치되어 도파관에 연결되며, 공정챔버의 주변부에 대응하는 위치에 ICP 안테나를 둘러싸도록 배치되고, 그 바닥벽에 마련된 다수의 슬롯을 통해 공정챔버 내부로 마이크로파를 방사하는 링 형상의 방사관;을 구비한다. 이와 같은 구성에 의하면, ICP 안테나에 의해 공정챔버 내부의 중심 영역에 전송되는 RF 파우어와 슬롯을 통해 공정챔버 내부의 주변 영역에 공급되는 마이크로파 파우어를 서로 독립적으로 제어함으로써, 대면적의 기판 가까이에서 플라즈마 분포의 균일도를 향상시킬 수 있다.
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公开(公告)号：KR1020100091835A
公开(公告)日：2010-08-19
申请号：KR1020090011207
申请日：2009-02-11
Applicant: 삼성전자주식회사
IPC: H01L21/8247 , H01L27/115
CPC classification number: H01L27/11578 , G11C16/0483 , H01L27/11551 , H01L27/11556 , H01L27/11582 , H01L27/0688
Abstract: PURPOSE: The non-volatile memory device and manufacturing method thereof of the vertical folding structure arrange the NAND string to the folding structure. Height is controlled appropriately even when having the vertical structure. CONSTITUTION: In order to have the folding structure of being extended on the substrate(105) perpendicularity the semiconductor structure(130a) is offered. The semiconductor structure comprises the bottom part(31), and the first sidewall part(32) and the second sidewall part(33). The buried insulating layer(132) fills the space between second side walls and the first. A plurality of control gate electrodes is separately placed according to the first and second sidewall parts.
Abstract translation: 目的：垂直折叠结构的非易失性存储器件及其制造方法将NAND串设置为折叠结构。 即使具有垂直结构，也适当地控制高度。 构成：为了使基板（105）上的折叠结构垂直，提供半导体结构（130a）。 半导体结构包括底部部分（31）和第一侧壁部分（32）和第二侧壁部分（33）。 掩埋绝缘层（132）填充第二侧壁和第一侧壁之间的空间。 根据第一和第二侧壁部分分开放置多个控制栅电极。
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