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    고밀도 반도체 메모리장치의 전원 공급전압 변환회로
    46.
    发明授权
    고밀도 반도체 메모리장치의 전원 공급전압 변환회로 失效
    高密度半导体存储器件的电源电压转换电路

    公开(公告)号：KR1019910005599B1

    公开(公告)日：1991-07-31

    申请号：KR1019890005792

    申请日：1989-05-01

    Applicant: 삼성전자주식회사

    Inventor： 민동선 ,  김창현 ,  진대제

    IPC: G11C11/40

    CPC classification number: G05F1/465 ,  G11C5/147 ,  G11C11/4074

    Abstract: The converter system comprises a reference voltage generator (40) for generating a const. voltage (VREF) and two power supply circuit (20P,20A) for providing a internal supply voltage (InVcc) to the peripheral and array circuits, respectively. Each of the power circuits (20P,20A) comprises a devider (2) generating a voltage (Vp) proportional to InVcc; a main pwer supply unit (22M) including a main differential amplifier (30P,30A) comparing Vp with VREF, and being activated by as pulse (ENP, ENA) when a high load current in requided, and a main power component (32P,32A) providing InVcc; and a subsidiary power supply unit (22S) including a differential amplifier (31P,31A) and a power component (33P,33A).

    Abstract translation: 转换器系统包括用于产生常数的参考电压发生器（40）。 电压（VREF）和两个电源电路（20P，20A），用于分别向外围和阵列电路提供内部电源电压（InVcc）。 每个电源电路（20P，20A）包括产生与InVcc成比例的电压（Vp）的偏移器（2） 主泵供应单元（22M），其包括将Vp与VREF进行比较的主差分放大器（30P，30A），并且当需要高负载电流时由主脉冲（ENP，ENA）激活，主功率分量（32P， 32A）提供InVcc; 以及包括差分放大器（31P，31A）和功率部件（33P，33A）的辅助电源单元（22S）。

    백바이어스전압 발생회로
    47.
    发明授权
    백바이어스전압 발생회로 失效
    反向偏置电压产生电路

    公开(公告)号：KR1019910004737B1

    公开(公告)日：1991-07-10

    申请号：KR1019880016959

    申请日：1988-12-19

    Applicant: 삼성전자주식회사

    Inventor： 민동선 ,  최훈

    IPC: G11C11/34

    CPC classification number: G05F3/205

    Abstract: A circuit for producing the backbias voltage in a semiconductor device comprises an oscillator (1) consisting of a ring oscillator or a schmitt trigger, a driver (2) for driving a charge pump (3) with the signal from the oscillator, the charge pump for producing a board voltage (Vbb), and a first board voltage detector (4) for controlling the oscillator or the driver by detecting the board voltage. The board voltage detector includes a number of pMOS transistors and two inverters.

    Abstract translation: 用于在半导体器件中产生反向电压的电路包括由环形振荡器或施密特触发器组成的振荡器（1），用于利用振荡器的信号驱动电荷泵（3）的驱动器（2），电荷泵 用于产生电路板电压（Vbb）和用于通过检测电路板电压来控制振荡器或驱动器的第一板电压检测器（4）。 板电压检测器包括多个pMOS晶体管和两个反相器。

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