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公开(公告)号:KR1020020007562A
公开(公告)日:2002-01-29
申请号:KR1020000040909
申请日:2000-07-18
Applicant: 삼성전자주식회사
IPC: G02B6/02
CPC classification number: H01L21/0332 , G02B6/136 , G02B2006/12061 , G02B2006/12173 , G02B2006/12176
Abstract: PURPOSE: A nickel etching mask manufacturing method is provided to simplify a process of making a thick metal mask by excluding a wet etching and a cleaning. CONSTITUTION: A chromium seed layer(22) is sputtered on a silica film formed on a silicon substrate. A thick PR layer is coated on the chromium seed layer. The PR layer is patterned by immersing the same into a chlorobenzene solution. A first nickel layer is sputtered on the PR pattern, so that a first nickel seed layer being layered on the PR pattern and on the chromium layer between the PR pattern. A second nickel layer(28) is formed on a first nickel layer(27) only on the chromium layer by plating. The PR pattern and the first nickel layer on the PR pattern are removed with acetone. The chromium seed layer is dry etched out in plasma by using gas.
Abstract translation: 目的:提供一种镍蚀刻掩模制造方法,通过排除湿式蚀刻和清洁来简化制作厚金属掩模的工艺。 构成:将铬籽晶层(22)溅射在形成于硅衬底上的二氧化硅膜上。 在铬种子层上涂覆厚的PR层。 通过将PR层浸入氯苯溶液中来构图PR层。 在PR图案上溅射第一镍层,使得在PR图案上和在PR图案之间的铬层上层叠第一镍籽晶层。 通过电镀仅在铬层上的第一镍层(27)上形成第二镍层(28)。 PR图案和PR图案上的第一个镍层用丙酮除去。 通过使用气体在等离子体中干蚀刻铬籽晶层。
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公开(公告)号:KR1020020004626A
公开(公告)日:2002-01-16
申请号:KR1020000038691
申请日:2000-07-06
Applicant: 삼성전자주식회사
IPC: C03C3/253
CPC classification number: C03C3/323 , C03C13/044 , H01S3/1691 , H01S3/17
Abstract: PURPOSE: A preparation method of alkali halogen-added sulfide glass for optical amplifier is provided, which improves fluorescence lifetime of sulfide glass due to the decrease of multiphonon relaxation phenomenon by adding alkali halogen(CsBr or KBr) to Pr3+-doped Ge-Ga-S ternary system. CONSTITUTION: The preparation method of sulfide glass is as follows: filling starting materials comprising Ge-Ga-S/Ge-Ga-As-S, alkali halogen(CsBr or KBr) and Pr into a silica ample, where the composition of Ge-Ga-S is Ge0.25-Ga0.10-S0.65, Ge0.29-Ga0.05-S0.66 and Ge0.18-Ga0.18-S0.645, and the composition of Ge-Ga-As-S is Ge0.30-Ga0.02-As0.06-S0.62; sealing under vacuum; melting starting materials by heating the ample; cooling; and annealing at glass transition temperature for 1hr.
Abstract translation: 目的:提供一种用于光放大器的碱卤素添加硫化物玻璃的制备方法,通过向Pr3 +掺杂的Ge-Ga-Al合金中加入碱卤素(CsBr或KBr),可以改善硫化玻璃的荧光寿命, S三元系统。 构成:硫化玻璃的制备方法如下:将Ge-Ga-S / Ge-Ga-As-S,碱性卤素(CsBr或KBr)和Pr的原料填充到二氧化硅充分中,其中Ge- Ga-S是Ge0.25-Ga0.10-S0.65,Ge0.29-Ga0.05-S0.66和Ge0.18-Ga0.18-S0.645,Ge-Ga-As- S为Ge0.30-Ga0.02-As0.06-S0.62; 在真空下密封; 通过加热充足的原料熔化; 冷却; 并在玻璃化转变温度下退火1小时。
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公开(公告)号:KR1020010019546A
公开(公告)日:2001-03-15
申请号:KR1019990035994
申请日:1999-08-27
Applicant: 삼성전자주식회사
IPC: G02B6/10
Abstract: PURPOSE: A planar optical waveguide device and method of fabricating the device are provided which deposits a silica thin film on a lower cladding layer and an etched surface of a core to restrict diffusion of impurities, thereby minimizing waveguide transformation. CONSTITUTION: An optical waveguide device includes a planar substrate(10), a lower cladding layer(12) deposited on the flat substrate, and a passivation layer(14) deposited on the lower cladding layer to minimize transformation generated at the interface. The device further has an optical waveguide formed of a material having refractive index larger than that of the lower cladding layer on the passivation layer, and an upper layer(20) deposited on the optical waveguide and the passivation layer.
Abstract translation: 目的:提供一种平面光波导器件及其制造方法,其在下包层和芯的蚀刻表面上沉积二氧化硅薄膜,以限制杂质的扩散,从而最小化波导变换。 构成:光波导器件包括平坦的衬底(10),沉积在平坦衬底上的下覆层(12)以及沉积在下敷层上的钝化层(14),以最小化在界面处产生的变换。 该器件还具有由钝化层上的折射率大于下包层的折射率的材料形成的光波导和沉积在光波导和钝化层上的上层(20)。
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公开(公告)号:KR1020000025573A
公开(公告)日:2000-05-06
申请号:KR1019980042714
申请日:1998-10-13
Applicant: 삼성전자주식회사
IPC: G02B6/00
CPC classification number: C03C13/044 , C03C3/323 , H01S3/06716
Abstract: PURPOSE: An optical fiber for optical amplifier is provided to provide an improved optical amplification efficiency by suppressing a grouping phenomenon of Pr+3 ions. CONSTITUTION: A rare-earth element is doped into a glass of Ge-Ga-S composition having less sulphur(S) than a composition of GeS2-Ga2S3. The rare-earth element is Pr+3. A halogen element of 0.1-10 atomic percent are more included with reference to the glass of Ge-Ga-S composition. The halogen element is bromine(Br) or iodine(I). The contents of Ga is less than 10 mole% and the contents of S is less than 70 mole%. The rare-earth element is doped together with an element selected from a group composed of Yb, Nd, Ho, Er, Tm, Cr, and Mn.
Abstract translation: 目的:提供光放大器的光纤,通过抑制Pr + 3离子的分组现象,提高光放大效率。 构成:将稀土元素掺杂到比GeS2-Ga2S3的组成更少的硫(S)的Ge-Ga-S组合物的玻璃中。 稀土元素是Pr + 3。 参考Ge-Ga-S组合物的玻璃更多地包括0.1-10原子%的卤素元素。 卤素元素是溴(Br)或碘(I)。 Ga的含量小于10摩尔%,S的含量小于70摩尔%。 稀土元素与选自由Yb,Nd,Ho,Er,Tm,Cr和Mn组成的组中的元素一起掺杂。
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公开(公告)号:KR1019990026089A
公开(公告)日:1999-04-15
申请号:KR1019970048064
申请日:1997-09-22
Applicant: 삼성전자주식회사
Inventor: 정선태
IPC: G02B6/10
Abstract: 본 발명은 압전체를 이용한 복굴절 조절 광 도파로 소자에 관한 것으로서, 기판, 광신호를 도파하는 코아 및 상기 코아보다 굴절율이 낮은 물질로 이루어지며, 상기 기판 위에 위치하여 상기 코아를 감싸는 클래딩을 구비한 광도파로는, 상기 클래딩 내부 또는 외부에 위치하거나 상기 클래딩 내부 및 외부에 위치하며, 전압을 가하면 스트레인(strain)에 의해 상기 도파로에 응력을 발생하여 그 응력과 관계가 있는 복굴절률의 크기를 제거하거나 조절하는 압전체막을 더 구비한다.
본 발명에 의하면 도파로 소자 제작시 생기는 잔류 응력에 대해 그와 반대 방향으로 상쇄 응력을 가하여 잔류 응력의 크기를 없애거나 제어함으로써 광신호의 복굴절을 제어할 수 있다.-
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公开(公告)号:KR1020170086974A
公开(公告)日:2017-07-27
申请号:KR1020160006672
申请日:2016-01-19
Applicant: 삼성전자주식회사
CPC classification number: A61B5/00 , A61B5/0013 , A61B5/0022 , A61B5/0077 , A61B5/0088 , A61B5/01 , A61B5/08 , A61C19/04 , G06F19/00 , G16H40/67
Abstract: 본발명은사용자가자신의사용자단말기를이용하여치아의상태및 진단정보를손쉽게얻을수 있는사용자단말기및 그제어방법이제공된다. 본발명의사용자단말기는, 영상을표시할수 있는화면을가지며, 상기화면의적어도일부영역에서특정파장의광을출력할수 있는디스플레이부와; 사용자의신체에대한이미지를촬상할수 있는촬상부와; 상기화면의제1영역에서제1파장범위의제1광이출력되도록상기디스플레이부를제어하고, 이미지를촬상하도록상기촬상부를제어하며, 상기촬상된이미지를분석하고, 상기화면의제2영역에분석정보를표시하도록상기디스플레이부를제어하는제어부를포함하는것을특징으로한다.
Abstract translation: 本发明提供了一种用户终端及其控制方法,其中用户可以使用他或她自己的用户终端容易地获得牙齿的状态和诊断信息。 本发明的用户终端包括:显示单元,具有能够显示图像并且能够在屏幕的至少一部分中输出特定波长的光的屏幕; 图像拾取部分,用于拾取用户身体的图像; 控制显示单元在屏幕的第一区域中输出第一波长范围中的第一光,控制图像感测单元对图像成像,分析感测的图像,分析屏幕的第二区域 以及用于控制显示单元显示信息的控制器。
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公开(公告)号:KR1020160115650A
公开(公告)日:2016-10-06
申请号:KR1020150118207
申请日:2015-08-21
Applicant: 삼성전자주식회사
CPC classification number: A61B5/14532 , A61B5/14546 , A61B5/1486 , A61B5/150022 , A61B5/15087 , A61B5/150984 , A61B5/157 , A61B5/6802 , A61B5/6814 , A61B5/6824 , A61B5/685 , A61B2560/0204 , A61B2560/045 , A61B2562/043
Abstract: 본발명의다양한실시예에따른웨어러블전자장치는, 신체에착용가능한바디부; 상기바디부에장착되는회로부; 및신체에접하여생체신호를측정하는센서부를포함하고, 상기센서부는상기바디부에탈착할수 있다. 상기와같은웨어러블전자장치는실시예에따라다양하게구현될수 있다.
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公开(公告)号:KR1020160023483A
公开(公告)日:2016-03-03
申请号:KR1020140109960
申请日:2014-08-22
Applicant: 삼성전자주식회사
IPC: G01N33/68 , G01N33/573 , G01N27/327
CPC classification number: G01N27/3273 , G01N27/3272
Abstract: 본개시에서는, i) 낮은분석대상물농도를정량적으로검출하기에충분한감도; 및 ii) 분석대상물의존재를선택적으로판별할수 있는우수한선택성;을갖는개선된바이오센서를제공한다.
Abstract translation: 本发明提供了一种生物传感器,其具有:i)用于低浓度待分析对象的定量检测的足够的灵敏度; 和ii)能够选择性地确定待分析对象的存在的优异的选择性。 生物传感器包括:第一传感器,包括第一操作电极和第一对电极; 包括第二操作电极和第二对置电极的第二传感器; 以及输出定量分析值和定性分析值的控制单元。
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公开(公告)号:KR1020150085461A
公开(公告)日:2015-07-23
申请号:KR1020140155422
申请日:2014-11-10
Applicant: 삼성전자주식회사
IPC: G01J1/02
CPC classification number: G01J1/0271 , G01J1/08 , G01J2001/083 , H01S5/18366
Abstract: 본발명의실시예들에따르면, 조광물질이함유된광도파로; 상기광도파로에가시광을입사하는발광소자; 및상기발광소자로부터출사되어상기광도파로를진행한가시광을검출하는수광소자를포함하는광센서및 그를구비하는전자장치가개시되며, 자외선에노출됨에따라조광물질에의해가시광에대한상기광도파로의투과율이변화할수 있다. 본발명에따른광센서및 그를구비하는전자장치는실시예에따라다양하게구현될수 있다.
Abstract translation: 公开了一种光学传感器和具有该光学传感器的电子设备。 根据本发明实施例的光学传感器包括:包含照明材料的光波导; 将可见光发射到光波导上的发光元件; 以及光接收元件,其检测从所述发光元件发射并在所述光波导中传播的可见光。 用于可见光的光波导的透射率可以通过暴露于紫外光的照明材料而改变。 根据本发明的实施例,可以各种实现根据本发明的光学传感器和具有该光学传感器的电子设备。
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