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公开(公告)号：KR1020130025856A
公开(公告)日：2013-03-12
申请号：KR1020120124475
申请日：2012-11-05
Applicant: 삼성전자주식회사
CPC classification number: H01L33/06 , H01L33/20 , H01L33/22 , H01L33/405 , H01L33/62 , H01L2924/12041
Abstract: PURPOSE: A nanorod light emitting device is provided to improve heat dissipation by using a reflective metal layer formed on a lighting nanorod. CONSTITUTION: A mask layer includes through holes. A lighting nanorod(140) includes a first doped semiconductor nanocore, an active layer(143), and a second doped semiconductor layer(120). The active layer surrounds the first doped semiconductor nanocore. A passivation layer(150) covers the corner part of the lighting nanorod. A reflective metal layer(160) is electrically connected to the first semiconductor layer and used as a first electrode. A second electrode is electrically connected to the semiconductor nanocore.
Abstract translation: 目的：提供纳米棒发光器件，通过使用形成在照明纳米棒上的反射金属层来改善散热。 构成：掩模层包括通孔。 照明纳米棒（140）包括第一掺杂半导体纳米孔，有源层（143）和第二掺杂半导体层（120）。 有源层围绕第一掺杂半导体纳米孔。 钝化层（150）覆盖照明纳米棒的角部。 反射金属层（160）电连接到第一半导体层并用作第一电极。 第二电极电连接到半导体纳米孔。
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公开(公告)号：KR1020130025716A
公开(公告)日：2013-03-12
申请号：KR1020110089207
申请日：2011-09-02
Applicant: 삼성전자주식회사
CPC classification number: H01L33/04 , H01L33/22 , H01L2924/12041
Abstract: PURPOSE: A nanorod light emitting device is provided to improve heat discharge efficiency by implementing a flip chip structure through a reflective metal layer on a light emitting nanorod. CONSTITUTION: A mask layer includes a plurality of through holes. A light emitting nanorod includes a first type doped semiconductor nanocore(141), an active layer(143), and a second type doped first semiconductor layer(147). A passivation layer(150) covers a corner part of the light emitting nanorod. A reflective metal layer(160) covers the first semiconductor layer of the exposed light emitting nanorod and is connected to the first semiconductor layer. The reflective metal layer functions as a first electrode. A second electrode is electrically connected to the semiconductor nanocore.
Abstract translation: 目的：提供纳米棒发光器件，以通过在发光纳米棒上的反射金属层实现倒装芯片结构来提高放热效率。 构成：掩模层包括多个通孔。 发光纳米棒包括第一掺杂半导体纳米孔（141），有源层（143）和第二掺杂的第一半导体层（147）。 钝化层（150）覆盖发光纳米棒的角部。 反射金属层（160）覆盖曝光的发光纳米棒的第一半导体层并连接到第一半导体层。 反射金属层用作第一电极。 第二电极电连接到半导体纳米孔。
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公开(公告)号：KR1020120065610A
公开(公告)日：2012-06-21
申请号：KR1020100126822
申请日：2010-12-13
Applicant: 삼성전자주식회사
CPC classification number: H01L33/22 , H01L21/0254 , H01L33/0079 , H01L33/12 , H01L33/32 , H01L2933/0083
Abstract: PURPOSE: A nitride semiconductor light emitting device and a manufacturing method thereof are provided to increase a lifetime thereof by preventing the inflow of moisture in a light emitting device. CONSTITUTION: A light emitting structure(15) is formed on a nitride buffer structure and includes a first conductive nitride semiconductor layer(15a), an active layer(15b), and a second conductive nitride semiconductor layer(15c). A support substrate(19) is formed on the light emitting structure. The support substrate is bonded to the light emitting structure by a metal layer(17) for bonding. A texture structure(20') with an AL containing layer is formed by texturing the nitride buffer structure.
Abstract translation: 目的：提供一种氮化物半导体发光器件及其制造方法，其通过防止发光器件中的水分流入而增加其寿命。 构成：发光结构（15）形成在氮化物缓冲结构上，并且包括第一导电氮化物半导体层（15a），有源层（15b）和第二导电氮化物半导体层（15c）。 在发光结构上形成支撑基板（19）。 支撑基板通过用于结合的金属层（17）结合到发光结构。 通过纹理化氮化物缓冲结构来形成具有AL含有层的纹理结构（20'）。
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公开(公告)号：KR1020120059058A
公开(公告)日：2012-06-08
申请号：KR1020100120664
申请日：2010-11-30
Applicant: 삼성전자주식회사
CPC classification number: H01L33/16 , B82Y30/00 , H01L33/04 , H01L33/14 , H01L33/20 , H01L2933/0033
Abstract: PURPOSE: A lamination structure, a manufacturing method thereof, and a light emitting device applying the same are provided to increase use efficiency of a quantum dot by easily controlling location and size of the quantum dot. CONSTITUTION: A plurality of holes(H1) is formed at one side of a semiconductor layer(10). An under layer(20) is formed on the upper side of the semiconductor layer. The under layer is conformally included along the upper side of the semiconductor layer. A quantum dot(30) is formed at the bottom of the plurality of holes. A graphene layer(40) covering the quantum dot is formed on the under layer. A planarization layer(50) is formed on the graphene layer. The plurality of holes is filled with the planarization layer.
Abstract translation: 目的：提供一种叠层结构及其制造方法及其应用发光器件，通过容易地控制量子点的位置和尺寸来提高量子点的使用效率。 构成：在半导体层（10）的一侧形成多个孔（H1）。 在半导体层的上侧形成下层（20）。 沿着半导体层的上侧保形地包括底层。 量子点（30）形成在多个孔的底部。 在底层上形成覆盖量子点的石墨烯层（40）。 在石墨烯层上形成平坦化层（50）。 多个孔填充有平坦化层。
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公开(公告)号：KR1020120058137A
公开(公告)日：2012-06-07
申请号：KR1020100119786
申请日：2010-11-29
Applicant: 삼성전자주식회사
IPC: H01L33/16 , B82Y20/00 , H01L21/02 , H01L33/08 , H01L33/04 , H01L33/14 , H01L33/40 , H01L33/42 , H01L33/32
CPC classification number: H01L33/16 , B82Y20/00 , H01L21/02603 , H01L33/04 , H01L33/08 , H01L33/14 , H01L33/145 , H01L33/18 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/42 , H01L2933/0058
Abstract: PURPOSE: A light emitting device and a manufacturing method thereof are provided to control a leakage current which can be generated at the adjacent face with a mask layer by narrowly forming the cross section of a lower predetermined region of a radiation nano-rod as compared with other region. CONSTITUTION: A first semiconductor layer(120) is formed on a substrate(110). A mask layer(130) equipped with a plurality of penetration holes is formed on the first semiconductor layer. A semiconductor nano core(142) is composed of semiconductor material doped by a same first type as the first semiconductor layer. An active layer(146) emits light through electron-hole recombination. The active layer surrounds the surface of the semiconductor nano core. A second semiconductor layer(148) covers the surface of the active layer. The second semiconductor layer is doped by a second type.
Abstract translation: 目的：提供一种发光器件及其制造方法，用于通过狭窄地形成辐射纳米棒的下部预定区域的横截面来控制可在掩模层的相邻面处产生的漏电流，与 其他地区。 构成：在衬底（110）上形成第一半导体层（120）。 在第一半导体层上形成配备有多个贯通孔的掩模层（130）。 半导体纳米芯（142）由与第一半导体层相同的第一类型掺杂的半导体材料构成。 有源层（146）通过电子 - 空穴复合发射光。 有源层围绕半导体纳米芯的表面。 第二半导体层（148）覆盖有源层的表面。 第二种半导体层被第二种类型掺杂。
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Patent Agency Ranking
公开(公告)号：KR102203461B1
公开(公告)日：2021-01-18
申请号：KR1020140086983
申请日：2014-07-10
Applicant: 삼성전자주식회사
IPC: H01L33/22
Abstract: 본발명의일 실시예는, 제1 도전형반도체로이루어진베이스층, 베이스층상에배치되며복수의개구를포함하는제1 물질층, 복수의개구를통해각각연장되며각각제1 도전형반도체로이루어진나노코어및 나노코어상에순차적으로배치된활성층과제2 도전형반도체쉘층(shell layer)을포함하는복수의나노발광구조물, 제1 물질층상에배치되며나노발광구조물의일부영역이노출되도록복수의나노발광구조물사이를매립하는충전층, 복수의나노발광구조물의노출된일부영역을덮도록충전층상에배치된제2 도전형반도체확장층(extension layer) 및제2 도전형반도체확장층상에배치되는콘택전극층을포함하는것을특징으로하는나노구조반도체발광소자를제공할수 있다.
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公开(公告)号：KR101891777B1
公开(公告)日：2018-08-24
申请号：KR1020120068171
申请日：2012-06-25
Applicant: 삼성전자주식회사
CPC classification number: H01L33/60 , B82Y20/00 , H01L27/15 , H01L33/08 , H01L33/14 , H01L33/24 , H01L33/46 , Y10S977/762 , Y10S977/949 , Y10S977/95
Abstract: 유전체리플렉터를구비한발광소자가개시된다. 개시된발광소자는기판상의제1 도전형반도체층과, 상기제1 도전형반도체층상에서복수의홀이형성된마스크층과, 상기제1 도전형반도체층상에서상기복수의홀을통해서수직으로성장된복수의수직발광구조체와, 상기제1 도전형반도체층상에서상기복수의수직발광구조체를감싸는전류확산층과, 상기전류확산층상에서상기전류확산층사이의공간을채우는유전체리플렉터를포함한다. 유전체리플렉터는굴절률이서로다른유전체층이하나의쌍을이룬복수의쌍을포함한다.
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公开(公告)号：KR101784815B1
公开(公告)日：2017-10-12
申请号：KR1020110001083
申请日：2011-01-05
Applicant: 삼성전자주식회사
Abstract: 본발명의발광소자는도전성기판상에마련된제1도전형반도체층, 제1도전형반도체층상에마련된활성층, 활성층상에마련된제2도전형반도체층및 제2도전형반도체층안에마련된그래핀층을포함할수 있다.
Abstract translation: 本发明中，在第一导电半导体层，设置在半导体层的有源层上的第一导电类型的第二导电类型半导体层，设置在所述活性层和所述第二导电型上的装置是在半导体层中设置固定层也设置在峰板 你可以包括它。
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公开(公告)号：KR1020170057512A
公开(公告)日：2017-05-25
申请号：KR1020150160588
申请日：2015-11-16
Applicant: 삼성전자주식회사
CPC classification number: H01L27/156 , F21V9/14 , G02B6/0096 , G09F9/33 , G09F13/00 , H01L25/0753 , H01L33/50 , H01L33/62 , H05B33/0854
Abstract: 본발명의일 실시형태에따른광원모듈은, 복수의칩 탑재영역을가지며, 상기각 칩탑재영역에접속패드가배치된기판; 상기기판상에배치되며, 상기칩 탑재영역에대응되는위치에복수의홀을갖는블랙매트릭스(black matrix); 및상기복수의홀에배치되어상기접속패드에전기적으로연결되는복수의반도체발광소자;를포함할수 있다.
Abstract translation: 根据本发明实施例的光源模块包括：具有多个芯片安装区域的基板，其中连接焊盘布置在相应的芯片安装区域中; 设置在所述基板上的黑矩阵，所述黑矩阵在对应于所述芯片安装区域的位置处具有多个孔; 并且多个半导体发光器件布置在多个孔中并电连接到连接焊盘。
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公开(公告)号：KR101689664B1
公开(公告)日：2017-01-09
申请号：KR1020100120664
申请日：2010-11-30
Applicant: 삼성전자주식회사
Abstract: 양자점을포함하는적층구조물과그 제조방법및 상기적층구조물을적용한발광소자가개시되어있다. 개시된양자점을포함하는적층구조물은일면에적어도하나의홀(hole)이형성된베이스층과, 상기홀의저면에구비된양자점, 그리고상기베이스층상에상기양자점을덮도록구비된도전성물질층을포함할수 있다. 상기도전성물질층은그래핀층일수 있다. 상기도전성물질층상에상기홀을메우는평탄화층이구비될수 있다. 상기적층구조물은반복적층구조를가질수 있다.
Abstract translation: 目的：提供一种叠层结构及其制造方法及其应用发光器件，通过容易地控制量子点的位置和尺寸来提高量子点的使用效率。 构成：在半导体层（10）的一侧形成多个孔（H1）。 在半导体层的上侧形成下层（20）。 沿着半导体层的上侧保形地包括底层。 量子点（30）形成在多个孔的底部。 在底层上形成覆盖量子点的石墨烯层（40）。 在石墨烯层上形成平坦化层（50）。 多个孔填充有平坦化层。
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