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公开(公告)号：KR1020130025716A
公开(公告)日：2013-03-12
申请号：KR1020110089207
申请日：2011-09-02
Applicant: 삼성전자주식회사
CPC classification number: H01L33/04 , H01L33/22 , H01L2924/12041
Abstract: PURPOSE: A nanorod light emitting device is provided to improve heat discharge efficiency by implementing a flip chip structure through a reflective metal layer on a light emitting nanorod. CONSTITUTION: A mask layer includes a plurality of through holes. A light emitting nanorod includes a first type doped semiconductor nanocore(141), an active layer(143), and a second type doped first semiconductor layer(147). A passivation layer(150) covers a corner part of the light emitting nanorod. A reflective metal layer(160) covers the first semiconductor layer of the exposed light emitting nanorod and is connected to the first semiconductor layer. The reflective metal layer functions as a first electrode. A second electrode is electrically connected to the semiconductor nanocore.
Abstract translation: 目的：提供纳米棒发光器件，以通过在发光纳米棒上的反射金属层实现倒装芯片结构来提高放热效率。 构成：掩模层包括多个通孔。 发光纳米棒包括第一掺杂半导体纳米孔（141），有源层（143）和第二掺杂的第一半导体层（147）。 钝化层（150）覆盖发光纳米棒的角部。 反射金属层（160）覆盖曝光的发光纳米棒的第一半导体层并连接到第一半导体层。 反射金属层用作第一电极。 第二电极电连接到半导体纳米孔。
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公开(公告)号：KR1020120059063A
公开(公告)日：2012-06-08
申请号：KR1020100120669
申请日：2010-11-30
Applicant: 삼성전자주식회사
CPC classification number: H01L51/50 , H01L2251/56
Abstract: PURPOSE: A quantum dot light emitting device and a manufacturing method thereof are provided to improve light emission efficiency of the light emitting device by including a graphene layer and injecting electrons and holes into a quantum dot light emitting layer. CONSTITUTION: A first graphene layer(20) is arranged on a substrate(10). A light emitting unit includes a buffer layer(30) and a quantum dot light emitting layer(40) which includes a plurality of quantum dots(41). A second graphene layer(50) is formed on the light emitting unit. The buffer layer is formed on the first graphene layer. The quantum dot light emitting layer is formed on the buffer layer. The first and second graphene layers comprise one or more graphene sheets.
Abstract translation: 目的：提供量子点发光器件及其制造方法，以通过包括石墨烯层并将电子和空穴注入量子点发光层来提高发光器件的发光效率。 构成：第一石墨烯层（20）布置在基底（10）上。 发光单元包括缓冲层（30）和包括多个量子点（41）的量子点发光层（40）。 在发光单元上形成第二石墨烯层（50）。 缓冲层形成在第一石墨烯层上。 量子点发光层形成在缓冲层上。 第一和第二石墨烯层包括一个或多个石墨烯片。
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公开(公告)号：KR1020120059061A
公开(公告)日：2012-06-08
申请号：KR1020100120667
申请日：2010-11-30
Applicant: 삼성전자주식회사
CPC classification number: H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00012
Abstract: PURPOSE: A light emitting device package and a manufacturing method thereof are provided to effectively block the penetration of foreign material by protecting a fluorescent material layer and a light emitting diode through a protective film. CONSTITUTION: A light emitting diode(30) is loaded on a lead frame. A mold structure fixes the lead frame. A support structure comprises the lead frame and the mold structure. The support structure comprises an electrical connection element for connecting the light emitting diode with an external terminal. An encapsulating material(40) covers the light emitting diode. A protective film(50) is included on the encapsulating material. The protective film comprises a first protective film and a second protective film. At least, one of the first protective film and the second protective film includes grapheme.
Abstract translation: 目的：提供发光器件封装及其制造方法，以通过保护膜保护荧光材料层和发光二极管来有效地阻止异物的渗透。 构成：发光二极管（30）装载在引线框架上。 模具结构固定引线框架。 支撑结构包括引线框架和模具结构。 支撑结构包括用于将发光二极管与外部端子连接的电连接元件。 封装材料（40）覆盖发光二极管。 保护膜（50）包含在封装材料中。 保护膜包括第一保护膜和第二保护膜。 至少第一保护膜和第二保护膜中的一个包括图形。
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公开(公告)号：KR1020120059058A
公开(公告)日：2012-06-08
申请号：KR1020100120664
申请日：2010-11-30
Applicant: 삼성전자주식회사
CPC classification number: H01L33/16 , B82Y30/00 , H01L33/04 , H01L33/14 , H01L33/20 , H01L2933/0033
Abstract: PURPOSE: A lamination structure, a manufacturing method thereof, and a light emitting device applying the same are provided to increase use efficiency of a quantum dot by easily controlling location and size of the quantum dot. CONSTITUTION: A plurality of holes(H1) is formed at one side of a semiconductor layer(10). An under layer(20) is formed on the upper side of the semiconductor layer. The under layer is conformally included along the upper side of the semiconductor layer. A quantum dot(30) is formed at the bottom of the plurality of holes. A graphene layer(40) covering the quantum dot is formed on the under layer. A planarization layer(50) is formed on the graphene layer. The plurality of holes is filled with the planarization layer.
Abstract translation: 目的：提供一种叠层结构及其制造方法及其应用发光器件，通过容易地控制量子点的位置和尺寸来提高量子点的使用效率。 构成：在半导体层（10）的一侧形成多个孔（H1）。 在半导体层的上侧形成下层（20）。 沿着半导体层的上侧保形地包括底层。 量子点（30）形成在多个孔的底部。 在底层上形成覆盖量子点的石墨烯层（40）。 在石墨烯层上形成平坦化层（50）。 多个孔填充有平坦化层。
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公开(公告)号：KR1020120058137A
公开(公告)日：2012-06-07
申请号：KR1020100119786
申请日：2010-11-29
Applicant: 삼성전자주식회사
IPC: H01L33/16 , B82Y20/00 , H01L21/02 , H01L33/08 , H01L33/04 , H01L33/14 , H01L33/40 , H01L33/42 , H01L33/32
CPC classification number: H01L33/16 , B82Y20/00 , H01L21/02603 , H01L33/04 , H01L33/08 , H01L33/14 , H01L33/145 , H01L33/18 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/42 , H01L2933/0058
Abstract: PURPOSE: A light emitting device and a manufacturing method thereof are provided to control a leakage current which can be generated at the adjacent face with a mask layer by narrowly forming the cross section of a lower predetermined region of a radiation nano-rod as compared with other region. CONSTITUTION: A first semiconductor layer(120) is formed on a substrate(110). A mask layer(130) equipped with a plurality of penetration holes is formed on the first semiconductor layer. A semiconductor nano core(142) is composed of semiconductor material doped by a same first type as the first semiconductor layer. An active layer(146) emits light through electron-hole recombination. The active layer surrounds the surface of the semiconductor nano core. A second semiconductor layer(148) covers the surface of the active layer. The second semiconductor layer is doped by a second type.
Abstract translation: 目的：提供一种发光器件及其制造方法，用于通过狭窄地形成辐射纳米棒的下部预定区域的横截面来控制可在掩模层的相邻面处产生的漏电流，与 其他地区。 构成：在衬底（110）上形成第一半导体层（120）。 在第一半导体层上形成配备有多个贯通孔的掩模层（130）。 半导体纳米芯（142）由与第一半导体层相同的第一类型掺杂的半导体材料构成。 有源层（146）通过电子 - 空穴复合发射光。 有源层围绕半导体纳米芯的表面。 第二半导体层（148）覆盖有源层的表面。 第二种半导体层被第二种类型掺杂。
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Patent Agency Ranking
公开(公告)号：KR1020120028103A
公开(公告)日：2012-03-22
申请号：KR1020100090115
申请日：2010-09-14
Applicant: 삼성전자주식회사
CPC classification number: H01L33/32 , H01L33/08 , H01L33/16 , H01L33/24 , H01L33/0062
Abstract: PURPOSE: A III family nitride nano rod light emitting device manufacturing method is provided to increase the contact area between an active layer and a conductive semiconductor layer, thereby increasing light emitting efficiency of a III family nitride nano rod light emitting device. CONSTITUTION: An insulation film has an opening which exposes a portion of a substrate. The insulation film is formed on the substrate. First conductive type III family nano rod seed layers(26a,36a,46a) grows on the substrate by supplying an III family element supply source gas and a nitrogen supply source gas. The III family element supply source gas and an impurity supply source gas are supplied in a pulse mode. An N supply source gas is continuously supplied to grow a first conductive III family nitride nano rod(26,36,46) on a first conductive III family nitride nano rod seed layer. An active layer is formed on a surface of each first conductive III family nitride nano rod. A second conductive nitride semiconductor layer is formed on an active layer.
Abstract translation: 目的：提供III族氮化纳米棒发光器件制造方法，以增加有源层与导电半导体层之间的接触面积，从而提高III族氮化纳米棒发光器件的发光效率。 构成：绝缘膜具有露出基板的一部分的开口。 绝缘膜形成在基板上。 第一导电III族纳米棒种子层（26a，36a，46a）通过提供III族元件供应源气体和氮气源气体在衬底上生长。 III族系列元件供应源气体和杂质源气体以脉冲模式供给。 连续供应N个供应源气体以在第一导电III族氮化物纳米棒种子层上生长第一导电III族氮化物纳米棒（26,36,46）。 在每个第一导电III族氮化纳米棒的表面上形成有源层。 在有源层上形成第二导电氮化物半导体层。
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公开(公告)号：KR1020120013076A
公开(公告)日：2012-02-14
申请号：KR1020100075239
申请日：2010-08-04
Applicant: 삼성전자주식회사
CPC classification number: H01L33/04 , H01L2924/12041
Abstract: PURPOSE: A semiconductor light emitting device based on nanorods and a manufacturing method thereof are provided to block current leakage on surfaces of a nanorod and an interface by limiting an electron to an AlGaN(Aluminium gallium nitride) nanorod with a AlGaN /GaN(Gallium Nitride) nanorod implanting layer. CONSTITUTION: An AlGaN(Aluminium gallium nitride) nanorod(140) is formed on a first conductive semiconductor layer and extended onto the first conductive semiconductor layer. An n-GaN(Gallium Nitride) shell layer(150) covers a side and upper side of the AlGaN nanorod and forms an inner shell of a nanorod structure. An active layer and a second conductive semiconductor layer successively cover the n-GaN shell layer. An AlGaN/GaN nanorod insertion layer(130) is formed between the first conductive semiconductor layer and the AlGaN nanorod. The AlGaN layer and the GaN layer are alternatively laminated and an AlGaN/GaN nanorod insertion layer is formed.
Abstract translation: 目的：提供一种基于纳米棒的半导体发光器件及其制造方法，用于通过将AlGaN（氮化镓）纳米棒与AlGaN / GaN（氮化镓（Nitride））限制电子来阻止纳米棒和界面的电流泄漏 ）纳米棒植入层。 构成：在第一导电半导体层上形成AlGaN（氮化镓铝）纳米棒，并延伸到第一导电半导体层上。 n-GaN（氮化镓）壳层（150）覆盖AlGaN纳米棒的侧面和上侧，并形成纳米棒结构的内壳。 有源层和第二导电半导体层依次覆盖n-GaN壳层。 在第一导电半导体层和AlGaN纳米棒之间形成AlGaN / GaN纳米棒插入层（130）。 层叠AlGaN层和GaN层，形成AlGaN / GaN纳米棒插入层。
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公开(公告)号：KR1020110117963A
公开(公告)日：2011-10-28
申请号：KR1020100037486
申请日：2010-04-22
Applicant: 삼성전자주식회사
CPC classification number: H01L33/06 , H01L33/145 , H01L33/20 , H01L33/387 , H01L33/42 , H01L2924/12041
Abstract: 본 발명은 질화물 반도체 발광 소자에 관한 것으로서, 본 발명의 일 실시 형태에 따른 질화물 반도체 발광 소자는, 제1 도전형 반도체층; 상기 제1 도전형 반도체층 상에 적어도 하나의 양자장벽층과 적어도 하나의 양자우물층이 교대로 적층되어 형성된 복수의 나노로드를 구비하는 활성층; 상기 복수의 나노로드 각각의 상면 및 측면을 덮도록 형성된 제2 도전형 반도체층; 및 상기 제1 및 제2 도전형 반도체층과 각각 전기적으로 연결된 제1 및 제2 전극;을 포함함으로써, 발광 소자의 발광 효율 및 신뢰성이 향상될 수 있다.
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公开(公告)号：KR1020110103229A
公开(公告)日：2011-09-20
申请号：KR1020100022453
申请日：2010-03-12
Applicant: 삼성전자주식회사
IPC: H01L33/04
CPC classification number: H01L33/06 , H01L33/20 , H01L33/42 , H01L2933/0058
Abstract: 본 발명은 반도체 발광소자에 관한 것으로, 제1 도전형 반도체층; 상기 제1 도전형 반도체층 상에 형성된 나노로드; 상기 나노로드를 덮도록 형성된 활성층;상기 활성층을 덮도록 형성된 제2 도전형 반도체층; 및 상기 제2 도전형 반도체층의 표면 중 적어도 일부를 덮도록 형성된 금속물질을 구비하여 상기 금속물질의 표면 플라즈몬이 상기 활성층에서 발광된 광과 공명을 일으키는 플라즈몬 발생층;을 포함하는 반도체 발광 소자를 제공한다.
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公开(公告)号：KR1020110102630A
公开(公告)日：2011-09-19
申请号：KR1020100021732
申请日：2010-03-11
Applicant: 삼성전자주식회사
IPC: H01L33/06
CPC classification number: H01L33/06 , H01L33/20 , H01L33/26 , H01L33/36 , H01L2924/12041 , H01L2933/0016 , H01L2933/0058
Abstract: 본 발명은 소자의 광효율을 향상시킬 수 있는 질화물 반도체 발광 소자 및 그 제조방법에 관한 것으로, 본 발명의 일실시 형태에 따른 질화물 반도체 발광소자는 제1 도전형 반도체층; 상기 제1 도전형 반도체층 상에 형성되며, 복수의 관통홀을 갖는 패턴층; 상기 복수의 관통홀에 의해 노출된 제1 도전형 반도체층 상에 각각 형성되되 상기 노출된 제1 도전형 반도체층으로부터 수직 성장된 나노선과, 상기 나노선의 상면에 위치하는 금속 촉매층과, 상기 나노선 및 금속 촉매층 각각의 표면에 형성된 적어도 하나의 양자우물층으로 이루어진 활성층; 상기 활성층의 표면에 형성된 제2 도전형 반도체층; 및 상기 제1 및 제2 도전형 반도체층과 각각 전기적으로 연결된 제1 및 제2 전극;을 포함한다.
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