-
公开(公告)号：KR101861765B1
公开(公告)日：2018-05-29
申请号：KR1020110019001
申请日：2011-03-03
Applicant: 삼성전자주식회사
CPC classification number: G02B3/0018 , G02B3/0056 , G02B13/14 , G02B23/14 , G03F7/40
Abstract: 깊이픽셀이개시된다. 상기깊이픽셀은, 입사광을집광하는포토레지스트(photoresist)를포함하는마이크로렌즈, 상기마이크로렌즈에의해집광된입사광의파장들중에서적외선영역의파장들을통과시키는적외선필터, 상기적외선필터에의해통과된적외선영역의파장들에응답하여광전하를생성하는광전변환소자및 상기적외선필터와상기광전변환소자사이에형성되는배선층을포함하고, 상기포토레지스트의점도는 150cp ~ 250cp이다..
-
公开(公告)号：KR1020130066289A
公开(公告)日：2013-06-20
申请号：KR1020110133054
申请日：2011-12-12
Applicant: 삼성전자주식회사
CPC classification number: G01S17/10 , G01S7/4861
Abstract: PURPOSE: A distance measuring sensor is provided to improve performance by moving light-generated charges to a charge storage area rapidly and stably. CONSTITUTION: First and second charge storage areas(150a,150b) are separated with each other on a substrate doped with a first impurity, and are doped with a second impurity where charges are stored. A photoelectric conversion area(140a) is formed between the first and second charge storage areas. A first dielectric layer(110a) is formed on the substrate to cover the first and second charge storage areas and the photoelectric conversion area. First and second transfer gates are formed between the first and second charge storage areas and are separated from each other on the first dielectric layer. The first and second transfer gates transport charges of the photoelectric conversion area to the first and second charge storage areas selectively, and cover a part of a second dielectric layer.
Abstract translation: 目的：提供距离测量传感器，通过将光产生的电荷快速稳定地移动到电荷存储区域来提高性能。 构成：第一和第二电荷存储区域（150a，150b）在掺杂有第一杂质的衬底上彼此分离，并且掺杂有第二杂质，其中存储电荷。 光电转换区域（140a）形成在第一和第二电荷存储区域之间。 在基板上形成第一电介质层（110a）以覆盖第一和第二电荷存储区域和光电转换区域。 第一和第二传输门形成在第一和第二电荷存储区之间并且在第一介电层上彼此分离。 第一和第二传输门选择性地将光电转换区域的电荷输送到第一和第二电荷存储区域，并且覆盖第二电介质层的一部分。
-
公开(公告)号：KR1020130006168A
公开(公告)日：2013-01-16
申请号：KR1020110068052
申请日：2011-07-08
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A sensor and a data processing system are provided to increase a generation range of an electric field in a side, thereby increasing photoelectron resolution. CONSTITUTION: A sensor(10) includes a depth pixel(16) of 1-tab pixel structure. A photoelectric transformation area generates a photo charge. An insulating layer is implemented on a semiconductor substrate. The semiconductor substrate includes the photoelectric transformation area. A first photo gate and a second photo gate are implemented on the insulating layer.
Abstract translation: 目的：提供传感器和数据处理系统，以增加侧面电场的产生范围，从而提高光电子分辨率。 构成：传感器（10）包括1个突片像素结构的深度像素（16）。 光电转换区产生光电荷。 在半导体衬底上实现绝缘层。 半导体衬底包括光电转换区域。 在绝缘层上实现第一光栅和第二光栅。
-
公开(公告)号：KR1020120100232A
公开(公告)日：2012-09-12
申请号：KR1020110019001
申请日：2011-03-03
Applicant: 삼성전자주식회사
CPC classification number: G02B3/0018 , G02B3/0056 , G02B13/14 , G02B23/14 , G03F7/40 , G01B11/22 , G02B3/00 , G02B13/00 , H01L27/14
Abstract: PURPOSE: A micro lens, a depth sensor including the same, and a method for manufacturing the micro lens are provided to prevent the performance degradation of the depth lens. CONSTITUTION: Photo-resist for forming a micro lens(110) is formed on a substrate. The photo-resist is exposed in order to form a photo-resist pattern. The viscosity of the photo-resist is 150 to 250cp. The thickness of the photo-resist is 0.1 to 9.9micrometers. The diameter of the photo-resist is 10 to 99micrometers. A photoelectric conversion element(160) creates a photo charge in response to infrared rays condensed through micro lens. A processer calculates distance of an object according to a signal outputted from a depth sensor.
Abstract translation: 目的：提供微透镜，包括其的深度传感器和用于制造微透镜的方法，以防止深度透镜的性能下降。 构成：在基板上形成用于形成微透镜（110）的光致抗蚀剂。 曝光光致抗蚀剂以形成光刻胶图案。 光致抗蚀剂的粘度为150〜250cp。 光致抗蚀剂的厚度为0.1〜9.9微米。 光致抗蚀剂的直径为10至99微米。 光电转换元件（160）响应通过微透镜会聚的红外线产生光电荷。 处理器根据从深度传感器输出的信号计算物体的距离。
-
公开(公告)号：KR1020090036462A
公开(公告)日：2009-04-14
申请号：KR1020070101667
申请日：2007-10-09
Applicant: 삼성전자주식회사
IPC: G01R33/00
CPC classification number: G11B9/02 , B82Y10/00 , G11B9/1409
Abstract: An electric field sensor with a vertical thin film structure is provided to control the density of foreign material accurately since there is no need of a diffusion process in forming a high resistance semiconductor layer. In a substrate(13), a low resistance semiconductor layer(10) in which impurity is doped to the high concentration is prepared in the top layer. The high resistance semiconductor layer(20) is located in the partial domain on the low resistance semiconductor layer. The impurity is doped to the low concentration, and a conductive layer(30) is located on the high resistance semiconductor layer. The change of the electric field is detected by the change of a current flowing through the low resistance semiconductor layer.
Abstract translation: 提供具有垂直薄膜结构的电场传感器，以便在形成高电阻半导体层时不需要扩散处理来精确地控制异物的密度。 在衬底（13）中，在顶层中制备杂质掺杂到高浓度的低电阻半导体层（10）。 高电阻半导体层（20）位于低电阻半导体层的部分域中。 杂质被掺杂到低浓度，并且导电层（30）位于高电阻半导体层上。 通过流过低电阻半导体层的电流的变化来检测电场的变化。
-
Patent Agency Ranking
公开(公告)号：KR1020090008010A
公开(公告)日：2009-01-21
申请号：KR1020070071286
申请日：2007-07-16
Applicant: 삼성전자주식회사
IPC: G11B5/127
CPC classification number: G11B9/02 , G11B5/6082 , H01L29/78
Abstract: An electric field reproduction/record head and a manufacturing method thereof, and an information storage apparatus including the electric field reproduction/record head are provided to improve operation stability and recording density of reproduction/record head by applying the electric field recording method to the drive system of HDD. An electric field reproduction/record head comprises a resistance region(20) which is formed within a substrate, having an end surface facing a recording medium, a source(30a) and a drain(30b) which are formed in either side of the resistance region of the substrate, and an insulating layer(40) and a write electrode(50) which are successively provided in the resistance region. The length(‘±) and width(w) of the resistance region satisfy the following equation, (‘±/w)>=0.2 or (‘±/w)>=1.
Abstract translation: 提供电场再现/记录头及其制造方法以及包括电场再现/记录头的信息存储装置，以通过将电场记录方法应用于驱动器来提高再现/记录头的操作稳定性和记录密度 硬盘系统 电场再现/记录头包括形成在基板内的电阻区域（20），具有面向记录介质的端面，形成在电阻的两侧的源极（30a）和漏极（30b） 区域，以及连续地设置在电阻区域中的绝缘层（40）和写入电极（50）。 电阻区域的长度（'±）和宽度（w）满足下列等式，（'±/ w）= 0.2或（'±/ w）= 1。
-
公开(公告)号：KR1020080100083A
公开(公告)日：2008-11-14
申请号：KR1020070046201
申请日：2007-05-11
Applicant: 삼성전자주식회사
IPC: G11B5/02
CPC classification number: G11B9/02
Abstract: An electric field effect record/playback apparatus and a driving method thereof are provided to compensate the playback sensitivity degradation by a problem in manufacturing and achieve optimum playback sensitivity by applying a predetermined voltage is authorized in a write electrode of an electric field effect record/playback head in the reproduction operation. A driving method of an electric field effect record/playback apparatus employing electric field effect record/playback head(100) including a resistance zone(R) located between a source area(S) and a drain region(D) and a write electrode(W) located in the resistance zone includes a step for applying adjustment voltage lower than critical voltage inducing polarization in a recording medium to the write electrode, and reproducing the information recorded in the recording medium according to the polarization direction of the electric domain on the recording medium based on the change in current amount flowing through the resistance zone.
Abstract translation: 提供电场效应记录/重放装置及其驱动方法以通过制造中的问题来补偿重放灵敏度劣化，并通过在电场效应记录/重放的写入电极中施加预定电压来实现最佳重放灵敏度 在复制操作中。 一种采用电场效应记录/重放头（100）的电场效果记录/重放装置的驱动方法，包括位于源区（S）和漏区（D）之间的电阻区（R）和写电极（ W）包括将低于记录介质中的临界电压诱导极化的调节电压施加到写入电极的步骤，并且根据记录介质上的电畴极化方向再现记录在记录介质中的信息 基于流过电阻区的电流量的变化的介质。
-
公开(公告)号：KR1020080018434A
公开(公告)日：2008-02-28
申请号：KR1020060080530
申请日：2006-08-24
Applicant: 삼성전자주식회사
IPC: G11B9/14
CPC classification number: G11B9/04 , B82Y10/00 , G11B9/1409 , G11B9/149
Abstract: A device for storing high density data and a recording/reproducing method thereof are provided to safely record/reproduce the data in a recording medium by separating the tip of a probe from the recording medium. A device for storing high density data uses a recording medium(200) and a probe(100). The recording medium is a thin film made of a phase change material or an oxide resistance variable material. A tip(140), having a channel structure of a field-effect transistor, is formed at the lower part of the probe and separated from the top of the recording medium.
Abstract translation: 提供一种用于存储高密度数据的装置及其记录/再现方法，用于通过将探针的尖端与记录介质分离来将数据安全地记录/再现在记录介质中。 用于存储高密度数据的装置使用记录介质（200）和探针（100）。 记录介质是由相变材料或氧化物电阻变化材料制成的薄膜。 具有场效应晶体管的沟道结构的尖端（140）形成在探针的下部并与记录介质的顶部分离。
-
公开(公告)号：KR100790895B1
公开(公告)日：2008-01-03
申请号：KR1020060113388
申请日：2006-11-16
Applicant: 삼성전자주식회사
IPC: H01L21/66
CPC classification number: G01Q60/30 , G01Q80/00 , H01C13/00 , Y10T29/49082
Abstract: A semiconductor probe having a resistive tip and a method for fabricating the same are provided to prevent abrasion of a resistive region by forming a plane with a dielectric layer of the resistive region, an electric field shield, and a dielectric layer. A resistive tip is doped with a first impurity. A stage of the resistive tip is doped with a second impurity of low density. The second impurity has polarity different from the polarity of the first impurity. A first and second semiconductor electrode regions are formed on an inclined surface of the resistive tip. The first and second semiconductor electrode regions are doped with the second impurity of high density. A dielectric layer(160) is formed on the resistive tip. An electric field shield(162) is formed on a dielectric layer. The electric field shield and the dielectric layer are formed as a plane on the end of the resistive tip. A cantilever(170) is positioned at an end of the resistive tip.
Abstract translation: 提供具有电阻端头的半导体探针及其制造方法，以通过形成具有电阻区域，电场屏蔽层和电介质层的介电层的平面来防止电阻区域的磨损。 电阻尖端掺杂有第一杂质。 电阻尖端的阶段掺杂有低密度的第二杂质。 第二杂质的极性与第一杂质的极性不同。 第一和第二半导体电极区域形成在电阻尖端的倾斜表面上。 第一和第二半导体电极区域掺杂有高密度的第二杂质。 在电阻尖端上形成介电层（160）。 在电介质层上形成电场屏蔽（162）。 电场屏蔽层和电介质层形成为电阻端头端的平面。 悬臂（170）位于电阻尖端的端部。
-
公开(公告)号：KR100745755B1
公开(公告)日：2007-08-02
申请号：KR1020060000886
申请日：2006-01-04
Applicant: 삼성전자주식회사
Abstract: A method for manufacturing a carbon nanotube probe tip is provided to record/reproduce information at high density and have a simple and easy manufacturing process by miniaturizing the carbon nanotube probe tip. A substrate(10) is prepared. A catalyst metal layer(12) and an aluminum oxide layer are successively formed on the substrate(10). The aluminum oxide layer is anodized to be changed to a porous aluminum oxide layer having fine holes which expose the catalyst metal layer(12). A carbon nanotube(20) is grown on the exposed catalyst metal layer(12). A photoresist is coated on the aluminum oxide layer, and the carbon nanotube(20) to be used as a probe tip is selectively masked. The dry etching of certain depth is performed from an upper surface of the aluminum oxide layer which is not coated by the photoresist to expose the substrate(10). The isotropic undercut etching of the substrate surface exposed by the dry etching is performed to form a front end part for supporting the carbon nanotube(20). The catalyst metal layer(12) exposed by the isotropic undercut etching is etched to expose a lower surface of the aluminum oxide layer which surrounds the carbon nanotube(20). The wet etching of the aluminum oxide layer is performed from a lower surface side of the aluminum oxide layer, and the aluminum oxide layer and the photoresist formed on the aluminum oxide layer are removed. The catalyst metal layer(12) is formed by at least one metal selected from a group containing Ni, an invar, Fe, Co, and Au.
Abstract translation: 提供一种用于制造碳纳米管探针尖端的方法，以通过使碳纳米管探针尖端小型化来以高密度记录/再现信息并且具有简单且容易的制造过程。 准备基板（10）。 催化剂金属层（12）和氧化铝层依次形成在基板（10）上。 氧化铝层被阳极化以变成具有暴露催化剂金属层（12）的细孔的多孔氧化铝层。 碳纳米管（20）在暴露的催化剂金属层（12）上生长。 在氧化铝层上涂覆光致抗蚀剂，并且选择性地掩蔽用作探针尖端的碳纳米管（20）。 从没有被光致抗蚀剂涂覆的氧化铝层的上表面执行特定深度的干蚀刻以暴露衬底（10）。 对通过干法蚀刻而暴露的基板表面进行各向同性底切蚀刻以形成用于支撑碳纳米管（20）的前端部分。 通过各向同性底切蚀刻而暴露的催化剂金属层（12）被蚀刻以暴露围绕碳纳米管（20）的氧化铝层的下表面。 从氧化铝层的下表面侧进行氧化铝层的湿法蚀刻，并去除氧化铝层上形成的氧化铝层和光致抗蚀剂。 催化剂金属层（12）由选自包含Ni，殷钢，Fe，Co和Au的组中的至少一种金属形成。
-
-
-
-
-
-
-
-
-
Search Results
56
records
(took 0.031 seconds)
