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公开(公告)号：KR1020110090397A
公开(公告)日：2011-08-10
申请号：KR1020100010139
申请日：2010-02-03
Applicant: 한화테크윈 주식회사 , 성균관대학교산학협력단
IPC: H01L21/027
CPC classification number: G03F7/0002 , B29C59/022 , H01L21/0331 , H01L21/0332
Abstract: PURPOSE: An apparatus and method for forming graphene pattern are provided to maintain the conductive property and visibility of a graphene by forming a graphene pattern and using an adhesive strength. CONSTITUTION: In an apparatus and method for forming graphene pattern, a bonding layer is formed in a stamp part in which a pattern is formed. The bonding layer of the stamp part is contacted with the graphene layer. A contact part to the adhesive layer is separated from the other part of the graphene layer.
Abstract translation: 目的：提供一种用于形成石墨烯图案的装置和方法，以通过形成石墨烯图案并使用粘合强度来维持石墨烯的导电性能和可视性。 构成：在用于形成石墨烯图案的装置和方法中，在其中形成图案的印模部分中形成结合层。 印模部分的结合层与石墨烯层接触。 与粘合剂层的接触部分与石墨烯层的另一部分分离。
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公开(公告)号：KR1020160067825A
公开(公告)日：2016-06-14
申请号：KR1020160068857
申请日：2016-06-02
Applicant: 한화테크윈 주식회사 , 성균관대학교산학협력단
CPC classification number: G06F3/045 , G06F2203/04103 , H01B5/14
Abstract: 본발명의일 측면에따르면, 제1기판과, 상기제1기판과대향하여배치되는제2기판과, 상기제1기판의적어도일면에배치되는제1도전막과, 상기제2기판의적어도일면에배치되는제2도전막과, 상기제1도전막과전기적으로연결되는제1전극들과, 상기제2도전막과전기적으로연결되는제2전극들을포함하고, 상기제1도전막및 상기제2도전막중 적어도하나는그래핀을포함하고, 상기제1도전막과상기제2도전막중 상기그래핀을포함한도전막에보호막이배치되는터치패널및 이의제조방법을제공한다.
Abstract translation: 本发明提供一种触摸面板及其制造方法。 根据本发明的一个方面，触摸面板包括：第一基板; 布置成面对所述第一基板的第二基板; 布置在所述第一基板的至少一个表面上的第一导电膜; 布置在所述第二基板的至少一个表面上的第二导电膜; 电连接到第一导电膜的第一电极; 以及与第二导电膜电连接的第二电极。 第一和第二导电膜中的至少一个包括石墨烯。 导电膜上设置保护膜，该保护膜可以是包括石墨烯的第一导电膜或第二导电膜。
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公开(公告)号：KR101386104B1
公开(公告)日：2014-04-16
申请号：KR1020120090621
申请日：2012-08-20
Applicant: 성균관대학교산학협력단 , (주)우주일렉트로닉스
Abstract: 본원은 그래핀 코팅된 금속 도체 및 이를 포함하는 가요성 평판 케이블 및 이의 제조 방법에 관한 것이다.
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公开(公告)号：KR1020140024561A
公开(公告)日：2014-03-03
申请号：KR1020120090621
申请日：2012-08-20
Applicant: 성균관대학교산학협력단 , (주)우주일렉트로닉스
Abstract: The present invention relates to a graphene coated metal conductor and a flexible flat cable containing the same. More particularly, the present invention relates to a graphene coated metal conductor, a flexible flat cable containing the same, and a manufacturing method thereof. According to the embodiment of the present invention, the graphene coated metal conductor includes a metal conductor; and a graphene layer formed on the metal conductor.
Abstract translation: 本发明涉及石墨烯涂覆的金属导体和包含该石墨烯的金属导体。 更具体地说，本发明涉及石墨烯涂覆的金属导体，含有该石墨烯的金属导体及其制造方法。 根据本发明的实施例，石墨烯涂覆的金属导体包括金属导体; 以及形成在金属导体上的石墨烯层。
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公开(公告)号：KR101315270B1
公开(公告)日：2013-10-07
申请号：KR1020130023041
申请日：2013-03-04
Applicant: 성균관대학교산학협력단
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L21/28291 , G11C11/22 , H01L21/84 , H01L27/1159 , H01L27/1203 , H01L28/24 , H01L29/6684 , H01L29/78391
Abstract: 본원은, 플렉서블 비휘발성 메모리 소자용 강유전체 캐패시터, 트랜지스터형 플렉서블 비휘발성 강유전체 메모리 소자, 1T-1R(1Transistor-1Resistor) 플렉서블 강유전체 메모리 소자 및 이들의 제조 방법에 관한 것으로서, 강유전체층과 반도체층 사이의 계면에 고분자 접착층을 형성함으로써 계면에서의 전기적 특성 및 물리화학적 특성을 향상시킬 수 있다.
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Patent Agency Ranking46.发明公开플렉서블 비휘발성 메모리 소자용 강유전체 캐패시터, 플렉서블 비휘발성 강유전체 메모리 소자 및 그의 제조 방법 无效用于柔性非易失性存储器件的柔性电容器，柔性非易失性存储器件及其制造方法
公开(公告)号：KR1020120001657A
公开(公告)日：2012-01-04
申请号：KR1020110062839
申请日：2011-06-28
Applicant: 성균관대학교산학협력단
IPC: H01L27/105 , H01L27/115 , H01L21/8247
CPC classification number: H01L21/28291 , G11C11/22 , H01L21/84 , H01L27/1159 , H01L27/1203 , H01L28/24 , H01L29/6684 , H01L29/78391 , H01L29/517
Abstract: PURPOSE: A ferroelectric capacitor for a flexible nonvolatile memory device, a flexible nonvolatile ferroelectric memory device, and a manufacturing method thereof are provided to improve electric, physical, and chemical properties in an interface between a ferroelectric layer and a semiconductor layer. CONSTITUTION: A contact layer(110) is formed on a flexible substrate(100). A first electrode(120) is formed on the contact layer. A ferroelectric layer(130) is formed on the first electrode. A second electrode(140) is formed on the ferroelectric layer. An insulation layer(150) is formed on the second electrode layer. A polymer protection layer(160) is formed on the second electrode.
Abstract translation: 目的：提供一种用于柔性非易失性存储器件的强电介质电容器，柔性非易失性铁电存储器件及其制造方法，以改善铁电层和半导体层之间的界面中的电学，物理和化学性质。 构成：在柔性基板（100）上形成接触层（110）。 第一电极（120）形成在接触层上。 铁电层（130）形成在第一电极上。 第二电极（140）形成在铁电层上。 绝缘层（150）形成在第二电极层上。 聚合物保护层（160）形成在第二电极上。
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公开(公告)号：KR1020110090398A
公开(公告)日：2011-08-10
申请号：KR1020100010140
申请日：2010-02-03
Applicant: 한화테크윈 주식회사 , 성균관대학교산학협력단
IPC: H01L21/027 , G06F3/041
CPC classification number: H01L21/027 , G06F3/041 , G06F2203/04103 , H01B5/14
Abstract: PURPOSE: A method for forming the pattern of a graphene is provided to maintain the conductive property and visibility property of a graphene by forming the screen area of a touch panel or an electrode region. CONSTITUTION: In a method for forming the pattern of a graphene, a graphene layer(602) is formed in a base substrate. A mask(603) is arranged on the top side of the graphene layer. The substrate having the mask is exposed to outside under oxidization atmosphere. The graphene pattern is formed. The mask is eliminated.
Abstract translation: 目的：提供一种用于形成石墨烯图案的方法，通过形成触摸面板或电极区域的屏幕区域来保持石墨烯的导电性能和可见性。 构成：在用于形成石墨烯图案的方法中，石墨烯层（602）形成在基底中。 掩模（603）布置在石墨烯层的顶侧上。 具有掩模的基板在氧化气氛下暴露于外部。 形成石墨烯图案。 面具被淘汰。
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公开(公告)号：KR1020110090396A
公开(公告)日：2011-08-10
申请号：KR1020100010138
申请日：2010-02-03
Applicant: 한화테크윈 주식회사 , 성균관대학교산학협력단
CPC classification number: G06F3/041 , G06F2203/04103 , H01B5/14
Abstract: PURPOSE: A method for forming an electrode of a touch panel is provided to offer an electrode forming method including a graphene. CONSTITUTION: Carbon is absorbed into a metal catalytic layer by using a chemistry deposition method. A praphene is grown by cooling the metal catalytic layer. A conduction layer is formed by arranging the graphene on one of substrates(10,130). Electrodes are formed on the surface of the conductive layer by processing the metal catalytic layer.
Abstract translation: 目的：提供一种用于形成触摸面板的电极的方法，以提供包括石墨烯的电极形成方法。 构成：通过使用化学沉积法将碳吸收到金属催化剂层中。 通过冷却金属催化层来生长一种茶树酚。 通过将石墨烯布置在基板（10,130）中的一个上而形成导电层。 通过处理金属催化剂层，在导电层的表面上形成电极。
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公开(公告)号：KR1020110083546A
公开(公告)日：2011-07-20
申请号：KR1020110003275
申请日：2011-01-12
Applicant: 한화테크윈 주식회사 , 성균관대학교산학협력단
CPC classification number: C01B31/0438 , B32B5/145 , B32B2457/00 , B82Y30/00 , B82Y40/00 , C01B32/182 , C01B32/186 , C01B32/19 , C01B2204/04 , Y10T428/24446
Abstract: PURPOSE: A method for manufacturing a graphene sheet, the graphene sheet, and an element using the same are provided to maintain the performance of the graphene sheet regardless of the shape deformation of the element. CONSTITUTION: A graphene growing support includes carbonating catalyst. Carbon source and heat are applied to the support to grow a graphene sheet on the support. Either of the support and the graphene sheet is cooled to form corrugation on the graphene sheet. Either of the height or the width of the graphene sheet is controlled by varying the thickness of the graphene sheet during the graphene sheet growing process.
Abstract translation: 目的：提供用于制造石墨烯片，石墨烯片和使用其的元件的方法，以保持石墨烯片的性能，而与元件的形状变形无关。 构成：石墨烯生长支持体包括碳酸化催化剂。 将碳源和热施加到支撑件上以在支撑件上生长石墨烯片。 支撑体和石墨烯片之一被冷却以在石墨烯片上形成波纹。 通过在石墨烯片生长过程中改变石墨烯片的厚度来控制石墨烯片的高度或宽度。
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公开(公告)号：KR1020110064150A
公开(公告)日：2011-06-15
申请号：KR1020090120621
申请日：2009-12-07
Applicant: 한국전자통신연구원 , 성균관대학교산학협력단
IPC: H01L29/786
CPC classification number: H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L29/78603 , H01L27/1262
Abstract: PURPOSE: A transferred thin film transistor and a manufacturing method thereof are provided to separate an active layer from a silicon wafer by a dry etching method and transfer the active layer to a flexible substrate, thereby maximizing productivity. CONSTITUTION: A source area(12), a drain area(14), and a channel area(15) are expanded on a first substrate(10) in a first direction. A trench(18) is expanded on the first substrate in the second direction crossing the first direction. A photoresist pattern(20) is formed on an active layer(16) between the trenches. The first substrate in the trench is etched by an anisotropic etching process so that the active layer is separated from the first substrate. The active layer is bonded with a second substrate.
Abstract translation: 目的：提供一种转移的薄膜晶体管及其制造方法，通过干蚀刻方法将有源层与硅晶片分离，并将活性层转移到柔性基板上，从而最大限度地提高生产率。 构成：源区域（12），漏区（14）和沟道区（15）在第一方向上在第一衬底（10）上扩展。 沟槽（18）在与第一方向交叉的第二方向上在第一基板上膨胀。 光刻胶图形（20）形成在沟槽之间的有源层（16）上。 通过各向异性蚀刻工艺蚀刻沟槽中的第一衬底，使得有源层与第一衬底分离。 有源层与第二衬底结合。
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