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公开(公告)号：KR100524025B1
公开(公告)日：2005-10-27
申请号：KR1020030101136
申请日：2003-12-31
Applicant: 제일모직주식회사
IPC: C09K3/14
Abstract: 본 발명은 바이오사이드를 포함하는 금속배선 연마용 CMP 슬러리에 관한 것으로, 보다 상세하게는 금속산화물 미분말, 2,2-디브로모-3-니트릴로프로피온아마이드 (2,2-dibromo-3-nitrilopropionamide), 과산화 화합물, 무기산, 유기산 및 탈이온수를 포함하는 금속배선 연마용 CMP 슬러리에 관한 것으로 본 발명에 의하면 금속배선의 CMP 공정시 연마 속도, 연마 선택비, 저장안정성에 영향을 주지 않으면서도 미생물의 오염을 방지할 수 있는 효과를 제공할 수 있다.
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公开(公告)号：KR1020050049138A
公开(公告)日：2005-05-25
申请号：KR1020030083024
申请日：2003-11-21
Applicant: 제일모직주식회사
IPC: C09K3/14
CPC classification number: C09G1/02 , C09K3/1463 , C23F3/00 , H01L21/3212
Abstract: 본 발명은 연마 재현성 및 저장안정성이 우수하면서도 연마결함을 야기시키지 않고 높은 연마속도를 제공할 수 있는 금속 CMP (Chemical Mechanical Polishing) 슬러리 조성물에 관한 것으로서, 보다 상세하게는 산화제로서 과산화 화합물 및 무기산, 1 이상의 카르복시기를 가지는 유기산 화합물, 리간드 화합물로서 트리메틸실릴트리플루오로메탄 술포네이트, 연마제로서 금속산화물, 필요에 따라 글리콜 화합물, 및 탈이온수를 포함한 금속 CMP용 슬러리 조성물에 관한 것이다. 본 발명에 따른 조성물은 화학적 연마능이 뛰어날 뿐만 아니라, CMP 공정에 적용시 발생하는 옥사이드 에로젼, 부식, 피트, 디싱, 스크래치 등의 연마결함을 현저히 감소시킬 수 있고, 슬러리의 저장안정성 및 연마재현성이 현저히 향상된다.
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公开(公告)号：KR1020040068385A
公开(公告)日：2004-07-31
申请号：KR1020030005010
申请日：2003-01-25
Applicant: 제일모직주식회사
IPC: C09K3/14
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212
Abstract: PURPOSE: Provided is a CMP(chemical mechanical polishing/planarization) slurry composition for metal lines, which has a high polishing rate even after a long storage time and thus shows excellent polishing reproducibility. CONSTITUTION: The CMP slurry composition for metal lines comprises a peroxide, an inorganic acid, a propylenediaminetetraacetate(PDTA)-metal complex in which the bonding energy between a metal atom and an oxygen atom is lower than that between O and W, a carboxylic acid having no double bond between carbon atoms, metal oxide micropowder and deionized water. More particularly, the CMP slurry composition comprises: 0.1-10 wt% of the peroxide; 0.001-0.1 wt% of the inorganic acid; 0.001-0.5 wt% of the PDTA-metal complex; 0.01-10 wt% of the carboxylic acid; and 0.1-25 wt% of the metal oxide micropowder, in deionized water.
Abstract translation: 目的：提供一种用于金属线的CMP（化学机械抛光/平坦化）浆料组合物，即使在长的保存时间后也具有高抛光速率，因此显示出优异的抛光再现性。 构成：金属线的CMP浆料组合物包括其中金属原子和氧原子之间的键合能低于O和W之间的键合能的过氧化物，无机酸，丙二胺四乙酸（PDTA） - 金属络合物，羧酸 在碳原子，金属氧化物微粉和去离子水之间没有双键。 更具体地，CMP浆料组合物包含：0.1-10重量％的过氧化物; 0.001-0.1重量％的无机酸; 0.001-0.5重量％的PDTA-金属络合物; 0.01-10重量％的羧酸; 和0.1-25重量％的金属氧化物微粉，在去离子水中。
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公开(公告)号：KR1020040059585A
公开(公告)日：2004-07-06
申请号：KR1020020085259
申请日：2002-12-27
Applicant: 제일모직주식회사
IPC: C09K3/14
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/3212
Abstract: PURPOSE: A slurry composition for polishing of metal is provided to prevent the edge of wafer from being over-polished to ensure an evenly polished surface and thereby increasing the yield of a cell positioned on the edge of wafer. CONSTITUTION: The slurry composition for polishing of metal comprises (a) a fine-powdered metal oxide; (b) an oxidizing agent; (c) a chelate complex; (d) a glycol; (e) a pH control agent including a quaternary ammonium base and acid; and (f) ultra pure water. The quaternary ammonium base is one selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide and tetrapropylammonium hydroxide. The pH of slurry composition is appropriately controlled by adjusting the amount of the quaternary ammonium base and the acid, depending on the metal to be polished.
Abstract translation: 目的：提供用于抛光金属的浆料组合物以防止晶片的边缘被过度抛光，以确保均匀抛光的表面，从而提高位于晶片边缘上的电池的产量。 构成：用于抛光金属的浆料组合物包括（a）细粉末金属氧化物; （b）氧化剂; （c）螯合络合物; （d）二醇; （e）包含季铵碱和酸的pH控制剂; 和（f）超纯水。 季铵碱是选自四甲基氢氧化铵，四乙基氢氧化铵和四丙基氢氧化铵的一种。 通过调整季铵碱和酸的量来适当地控制浆料组合物的pH，这取决于待抛光的金属。
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公开(公告)号：KR1020040059572A
公开(公告)日：2004-07-06
申请号：KR1020020085246
申请日：2002-12-27
Applicant: 제일모직주식회사
IPC: C09K3/14
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/3212
Abstract: PURPOSE: A slurry composition for polishing a tungsten wire is provided, to increase polishing velocity without generation of corrosion or seam and to improve the dispersion stability of polishing particles, thereby enhancing polishing reproducibility. CONSTITUTION: The slurry composition comprises 1-25 wt% of a silica particle; 1-5 wt% of an oxidizing agent; 0.001-1 wt% of a chelate complex; 0.001-2 wt% of glycol; a pH controller; and an ultrapure water. Preferably the final pH of the composition is 2-4. Preferably the oxidizing agent is at least one selected from the group consisting of hydrogen peroxide, benzoyl peroxide, calcium peroxide, barium peroxide and sodium peroxide; the chelate complex is one selected from the group consisting of PDTA-Fe, EDTA-Fe and PDTA-Mg; and the glycol is at least one selected from the group consisting of monoethylene glycol and diethylene glycol.
Abstract translation: 目的：提供用于抛光钨丝的浆料组合物，以增加抛光速度而不产生腐蚀或接缝，并提高抛光颗粒的分散稳定性，从而提高抛光重现性。 构成：浆料组合物包含1-25重量％的二氧化硅颗粒; 1-5重量％的氧化剂; 0.001-1重量％的螯合络合物; 0.001-2重量％的乙二醇; pH控制器 和超纯水。 优选组合物的最终pH为2-4。 优选地，氧化剂是选自过氧化氢，过氧化苯甲酰，过氧化钙，过氧化钡和过氧化钠中的至少一种; 螯合络合物选自PDTA-Fe，EDTA-Fe和PDTA-Mg; 并且所述二醇是选自由单乙二醇和二甘醇组成的组中的至少一种。
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Patent Agency Ranking
公开(公告)号：KR1020030075004A
公开(公告)日：2003-09-22
申请号：KR1020020014076
申请日：2002-03-15
Applicant: 제일모직주식회사
IPC: G03F7/004
Abstract: PURPOSE: A photoresist composition for forming a positive image in a semiconductor, an LCD, a circuit board or a print board is provided to obtain a pattern having excellent resolution with ease. CONSTITUTION: The photoresist composition comprises: (1) a poly(hydroxystyrene) resin having the formula 1; (2) a crosslinkable photosensitizer having the formula 2; (3) a non-crosslinkable photosensitizer having the formula 3; (4) an organic base; and (5) an organic solvent: wherein each of l, m and n is a real number satisfying the condition that l/(l+m+n) is ranged from 0.62 to 0.8, m/(l+m+n) is ranged from 0.04 to 0.06 and n/(l+m+n) is ranged from 0.16 to 0.32.
Abstract translation: 目的：提供一种用于在半导体，LCD，电路板或印刷板中形成正像的光致抗蚀剂组合物，以便轻松获得优异分辨率的图案。 构成：光致抗蚀剂组合物包括：（1）具有式1的聚（羟基苯乙烯）树脂; （2）具有式2的可交联光敏剂; （3）具有式3的不可交联光敏剂; （4）有机碱; 和（5）有机溶剂：其中l，m和n分别是满足l /（1 + m + n）为0.62〜0.8的条件的实数，m /（1 + m + n）为 范围为0.04至0.06，n /（1 + m + n）为0.16至0.32。
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公开(公告)号：KR100359220B1
公开(公告)日：2002-11-04
申请号：KR1020000083649
申请日：2000-12-28
Applicant: 제일모직주식회사
IPC: G03F7/039
Abstract: 본 발명은 포토레지스트 (photoresist) 조성물에 관한 것으로, 보다 상세하게는 (1)분자량 5000~50000인 히드록시스티렌/t-부틸아크릴레이트 공중합체 또는 히드록시스티렌/t-부틸메타크릴레이트 공중합체 분자간에 비스페놀-A 디에탄올디비닐에테르 또는 1,4-시클로헥산디메탄올디비닐에테르를 가교제로 도입하여 가교결합시켜 얻어진, 하기 화학식 1의 구조를 갖는 분자량 7000~100000인 고분자 화합물 100중량부, (2)하기 화학식 5의 구조를 갖는 감광제 0.1~20중량부, (3)유기염기 0.01~10중량부 및 (4)유기용매 500~1000중량부를 포함하는 포토레지스트 조성물에 관한 것이며, 본 발명에 의하여 리소그라피 특성의 저하없이 저온에서 경화시켜도 우수한 잔막율을 유지하는 포토레지스트 조성물을 제공할 수 있다.
[화학식 1]
(상기 화학식중 R
1 은 수소원자 또는 메틸기이고, R
2 는 t-부틸기 또는 메틸기이며, R
3 는 메틸기이고, X는 또는 이며, m 및 n은 각각 0.05≤n/m≤0.5를 만족시키는 정수임)
[화학식 5]
(상기 화학식중 Q
- 는 노나플레이트(nonaflate) 또는 10-캄파술포네이트(10-camphorsulfonate)이고, Me는 메틸기임)-
公开(公告)号：KR1020020032791A
公开(公告)日：2002-05-04
申请号：KR1020000063452
申请日：2000-10-27
Applicant: 제일모직주식회사
IPC: G03F7/039
CPC classification number: G03F7/039 , G03F7/0045 , G03F7/027 , G03F7/0392 , G03F7/0397
Abstract: PURPOSE: Provided is a photoresist composition which is excellent in volatility and diffusion velocity and has an improved photospeed. CONSTITUTION: The photoresist composition comprises 100 parts by weight of high molecular weight compound having hydroxyl group or carboxyl group and 0.1-20 parts by weight of photosensitizer represented by formula 1. In the formula 1, Q- is selected from the group consisting of nonaflate, 10-camphorsulfonate, o-(or p-) trifluoromethyl benzene sulfonate, triflate and tosylate, and Me represents methyl group. The photoresist composition has improved photospeed, acid-volatility, and acid-diffusion property.
Abstract translation: 目的：提供挥发性和扩散速度优异并且具有改进的感光速度的光致抗蚀剂组合物。 构成：光致抗蚀剂组合物包含100重量份的具有羟基或羧基的高分子量化合物和0.1-20重量份由式1表示的光敏剂。在式1中，Q-选自非卤素 ，10-樟脑磺酸盐，邻 - （或对）三氟甲基苯磺酸盐，三氟甲磺酸盐和甲苯磺酸盐，Me代表甲基。 光致抗蚀剂组合物具有改善的感光速度，酸挥发性和酸扩散性能。
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公开(公告)号：KR1020140125316A
公开(公告)日：2014-10-28
申请号：KR1020140045953
申请日：2014-04-17
Applicant: 제일모직주식회사
IPC: C09K3/14 , H01L21/304
CPC classification number: C09G1/02 , B24B1/00 , B24B37/044 , C09G1/00 , C09G1/04 , C09G1/06 , C09K3/1454 , C09K3/1463 , C09K3/1472 , C09K13/06 , H01L21/30625 , H01L21/31058 , H01L21/3212
Abstract: 본 발명은 극성 용매, 비극성 용매 중 하나 이상; 및 금속산화물 연마제를 포함하고, 산성이고, 탄소 함량이 50 내지 95atom%인 유기막을 연마하기 위한 유기막 CMP 슬러리 조성물 및 이를 이용한 연마 방법에 관한 것이다.
Abstract translation: 本发明涉及一种用于有机膜的CMP浆料组合物，其包括极性溶剂和/或非极性溶剂; 和金属氧化物研磨剂是酸性的，并且用于研磨碳含量为50〜95原子％的有机膜以及使用其的研磨方法。 根据本发明，提供了一种用于有机膜的CMP浆料组合物，其具有对具有高碳含量的有机膜以及膜的密度和硬度具有优异的抛光效果。
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公开(公告)号：KR1020140085253A
公开(公告)日：2014-07-07
申请号：KR1020120155609
申请日：2012-12-27
Applicant: 제일모직주식회사
IPC: C09K3/14 , H01L21/304
CPC classification number: C09K3/1409 , B24B37/044 , H01L21/30625
Abstract: A CMP slurry composition according to the present invention includes: ceria particles having a negative surface potential; a phosphate compound having more than one phosphate group; and deionized water, while having the pH below 7. The surface potential of the ceria particles ranges from -10 to -50 mV, and the phosphate compound takes up 0.01 to 0.5 wt% among the entire composition, while having more than three phosphate groups. In addition, the pH of the composition ranges from 4-7.
Abstract translation: 根据本发明的CMP浆料组合物包括：具有负表面电位的二氧化铈颗粒; 具有多于一个磷酸基的磷酸酯化合物; 和去离子水，同时pH低于7.二氧化铈颗粒的表面电位为-10至-50mV，并且在整个组合物中磷酸盐化合物占0.01〜0.5wt％，同时具有三个以上的磷酸基 。 此外，组合物的pH范围为4-7。
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