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公开(公告)号：KR1020030056430A
公开(公告)日：2003-07-04
申请号：KR1020010086641
申请日：2001-12-28
Applicant: 재단법인서울대학교산학협력재단
IPC: H01L21/28
Abstract: PURPOSE: A method for forming a silver thin film as a semiconductor metal line is provided to be capable of improving the uniformity and the adhesive force of the silver thin film by processing a heat treatment after forming a metal seed layer using electroless plating process. CONSTITUTION: A semiconductor substrate(110) is prepared for processing the following processes. After cleaning the semiconductor substrate, the surface of the semiconductor substrate is activated. A metal seed layer(130) is formed on the resultant structure by using an electroless plating solution. A heat treatment is carried out at the resultant structure. A silver thin film(140) is formed on the metal seed layer by carrying out an electrolytic plating process using a silver electrolytic plating solution.
Abstract translation: 目的：提供一种形成银薄膜作为半导体金属线的方法，其能够通过使用化学镀处理在形成金属种子层之后进行热处理来提高银薄膜的均匀性和粘合力。 构成：制备半导体衬底（110）用于处理以下工艺。 在清洁半导体衬底之后，激活半导体衬底的表面。 通过使用化学镀溶液在所得结构上形成金属种子层（130）。 在所得结构下进行热处理。 通过使用银电解电镀液进行电解电镀，在金属种子层上形成银薄膜（140）。
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公开(公告)号：KR1020030037607A
公开(公告)日：2003-05-14
申请号：KR1020010068867
申请日：2001-11-06
Applicant: 재단법인서울대학교산학협력재단
IPC: C23C18/40
Abstract: PURPOSE: A method for forming copper film is provided in which formation of copper seed layer and copper electroplating are performed in the same container to prevent oxidation of the seed layer due to exposure to the atmosphere, and separate CVD or PVD apparatus for forming the copper seed layer is not required to reduce production cost. CONSTITUTION: The method comprises the steps of forming an electroless plated copper film on the surface of the object to be plated by dipping an object to be plated into an electroless plating solution comprising copper salt, complexing agent for inhibiting liquid reaction by forming copper ions and ligands, reducing agent for reducing copper ions, and a pH adjusting agent for maintaining a proper pH so that the reducing agent is oxidized; and forming an electroplated copper film on the object to be plated by directly impressing reduction potential to the object to be plated on which the electroless plated copper film is formed with the object to be plated not being taken out from the electroless plating solution, wherein the reducing agent is HCHO (formaldehyde), wherein the complexing agent is EDTA (ethylene-diamine tetraacetic acid), wherein the reduction potential is a potential corresponding to the range where copper exists for pH of the electroless plating solution in Pourbaix diagram for copper, and wherein the reduction potential is -0.5 V vs NHE or less.
Abstract translation: 目的：提供一种形成铜膜的方法，其中在同一容器中进行铜籽晶层和铜电镀的形成以防止由于暴露于大气中而引起种子层的氧化，并且分离用于形成铜的CVD或PVD装置 种子层不需要降低生产成本。 方法：该方法包括以下步骤：通过将待镀物体浸渍到包含铜盐的化学镀溶液中，通过形成铜离子来抑制液体反应的络合剂，在待镀物体的表面上形成化学镀铜膜;以及 配体，用于还原铜离子的还原剂和用于保持适当pH的pH调节剂以使还原剂被氧化; 通过对被镀物体形成电化学镀铜膜的方法，直接对被镀物体施加还原电位而形成电镀铜膜，并将其从化学镀液中取出，其中， 还原剂是HCHO（甲醛），其中络合剂是EDTA（乙二胺四乙酸），其中还原电位是对应于铜存在于铜的Pourbaix图中的化学镀溶液的pH的范围的电位的电位，以及 其中还原电位为-0.5V对NHE或更低。
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公开(公告)号：KR100832040B1
公开(公告)日：2008-05-27
申请号：KR1020060091234
申请日：2006-09-20
Applicant: 재단법인서울대학교산학협력재단
Abstract: 본 발명은 마이크로 반응기 내부에 형성된 미세 유로에서의 촉매 반응을 수반하는 화학 반응을 일으키기 위하여 미세 유로가 촉매 층에 의한 막힘 현상이 없도록 미세 유로의 내벽에만 효과적으로 촉매 층을 코팅할 수 있는 방법을 제시한다. 본 발명에서는 슬러리 형태의 촉매 코팅액을 이용하여 채우기-건조법(fill and dry coating)을 적용함으로써, 마이크로 반응기의 미세 유로 내벽에만 촉매 층의 코팅이 이루어지도록 하였다. 또한 미세 유로 표면과 촉매 층과의 접착력 향상을 위하여 미세 유로 표면에 실리콘 산화막을 형성하였다. 본 발명의 기본 개념인 채우기-건조법에 따르면, 미세 유로의 크기와 더불어 촉매 슬러리의 점도에 따라 코팅되는 촉매 층의 두께 및 미세 유로의 막힘 현상에 영향을 주므로 이를 적절히 조절하여 최적화된 촉매 층을 갖는 마이크로 반응기를 얻을 수 있다.
마이크로 반응기, 미세 유로, 촉매 코팅액, 촉매 층, 슬러리-
公开(公告)号：KR100475402B1
公开(公告)日：2005-03-10
申请号：KR1020020031577
申请日：2002-06-05
Applicant: 재단법인서울대학교산학협력재단
IPC: H01L21/20
Abstract: 반도체 배선용 전극으로 사용되는 루테늄 박막을 전해 도금으로 형성하는 방법에 대하여 개시한다. 본 발명의 루테늄 박막 형성 방법은: 반도체 기판을 마련하는 단계와, 활성화 용액에 기판을 침지시켜서 기판 표면에 활성화 물질을 증착하여 기판을 활성화하는 단계, 활성화된 기판을 루테늄 전해 도금 용액에 침지시키고 환원 전위를 인가하여 활성화된 기판 표면에 루테늄을 전해 도금하는 루테늄 증착 단계로 이루어지는 것을 특징으로 한다. 본 발명에 의하면, 활성화된 기판은 전해 도금법에 의한 보다 균일하게 루테늄이 증착되도록 유도함으로써, 누설 전류가 감소 및 항복 전압이 증가, 즉 전기적 특성이 좋아지게 되는 효과를 나타낸다. 또한, 간단한 공정으로 보다 얇은 단차 패턴의 고품질 루테늄 박막을 형성할 수 있어서, 유전 물질을 쉽게 채워 넣을 수 있는 디램 커패시터의 하부 전극을 형성할 수 있기 때문에 반도체 산업에 지대한 영향을 끼칠 수 있다.
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公开(公告)号：KR100454633B1
公开(公告)日：2004-11-05
申请号：KR1020020000491
申请日：2002-01-04
Applicant: 재단법인서울대학교산학협력재단
IPC: H01L21/288
Abstract: PURPOSE: A method for processing the surface of a substrate is provided to be capable of activating the surface of the substrate, reducing surface resistance, and improving the uniformity of an electroless plating layer. CONSTITUTION: A semiconductor substrate is prepared. A native oxide layer formed on the surface of the semiconductor substrate, is etched and cleaned. The surface of the semiconductor substrate is activated by immersing the cleaned semiconductor substrate into an activating solution. At this time, the activating solution is made of a catalyst for oxidizing a reducing agent, an activating agent for activating the surface of the semiconductor substrate, and a complexing agent for forming metal ion and ligand of the catalyst. Preferably, the metal ion of the catalyst is made of palladium, silver, gold, copper, or platinum.
Abstract translation: 目的：提供一种用于处理基板表面的方法，其能够激活基板的表面，降低表面电阻并提高化学镀层的均匀性。 构成：准备半导体衬底。 形成在半导体衬底表面上的自然氧化层被蚀刻并清洁。 通过将清洁的半导体衬底浸入活化溶液中来激活半导体衬底的表面。 此时，活化溶液由用于氧化还原剂的催化剂，用于激活半导体衬底表面的活化剂和用于形成催化剂的金属离子和配体的络合剂构成。 优选地，催化剂的金属离子由钯，银，金，铜或铂制成。
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Patent Agency Ranking
公开(公告)号：KR1020030095005A
公开(公告)日：2003-12-18
申请号：KR1020020032506
申请日：2002-06-11
Applicant: 재단법인서울대학교산학협력재단
IPC: C23C18/16
CPC classification number: H01L21/76883 , C23C18/1642 , C23C18/1653 , C23C18/42 , C25D3/38 , C25D7/12 , H01L21/288 , H01L21/7684
Abstract: PURPOSE: A method for fabricating metal film for semiconductor interconnection is provided to prevent oxidation of copper thin film in formation of copper semiconductor interconnection using electrolytic plating. CONSTITUTION: The method comprises a step of preparing a semiconductor substrate formed in a fine pattern; a step of forming a copper thin film(140) all over the surface the semiconductor substrate by putting the semiconductor substrate into a copper electrolytic plating solution and impressing reduction potential to the semiconductor substrate so that copper electrolytic plating is performed on the semiconductor substrate; a substrate flattening step of flatly etching the whole surface of the semiconductor substrate so that only the copper thin film(140) formed on a groove part of the semiconductor substrate is remained; and a thin film forming step of substituting silver for the surface of the remained copper thin film by dipping the flattened semiconductor substrate into a silver substitution solution, wherein the method further comprises a heat treatment step of heat treating the silver thin film(150) formed semiconductor substrate at a nitrogen atmosphere.
Abstract translation: 目的：提供一种制造用于半导体互连的金属膜的方法，以防止铜薄膜在使用电解电镀形成铜半导体互连时的氧化。 构成：该方法包括制备以精细图案形成的半导体衬底的步骤; 通过将半导体衬底放入铜电解电镀液中并向半导体衬底施加还原电位，使半导体衬底的整个表面上形成铜薄膜（140），从而对半导体衬底进行铜电解电镀; 平面蚀刻半导体衬底的整个表面的衬底平坦化步骤，使得仅保留形成在半导体衬底的沟槽部分上的铜薄膜（140）; 以及通过将平坦化的半导体衬底浸入银取代溶液中而将银代替保留的铜薄膜的表面的薄膜形成步骤，其中该方法还包括热处理形成的银薄膜（150）的热处理步骤 半导体衬底。
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公开(公告)号：KR100963842B1
公开(公告)日：2010-06-16
申请号：KR1020080065545
申请日：2008-07-07
Applicant: 재단법인서울대학교산학협력재단
IPC: H01L21/304
Abstract: 구리배선 형성방법에 관하여 개시한다. 본 발명의 방법은, CMP 공정을 실시함에 있어서 용매제와, 환원제와, pH 조절제와, 착물형성제와, Co(Ⅱ) 이온 또는 Co(Ⅲ) 이온을 포함하는 화합물이 포함된 세정액을 사용하여 완화단계을 실시함으로써 구리배선 상에 캡핑막을 형성하는 것을 특징으로 한다. 본 발명에 따른 세정액을 사용하여 CMP 공정의 완화단계를 수행하면 추가 공정 없이도 구리배선의 산화 및 확산 방지막으로서의 Co 계열 캡핑막을 형성할 수 있으므로, 공정이 간단해지고 생산성을 향상시킬 수 있다.
반도체, 구리배선, 캡핑막, 화학적 기계적 연마, 세정액-
公开(公告)号：KR1020100005493A
公开(公告)日：2010-01-15
申请号：KR1020080065545
申请日：2008-07-07
Applicant: 재단법인서울대학교산학협력재단
IPC: H01L21/304
CPC classification number: H01L21/7684 , H01L21/3212
Abstract: PURPOSE: A copper wiring formation method is provided to simplify the process and improve productivity by forming Co capping layer as an oxide and diffusion prevention layer through a CMP relief process using a cleaning agent. CONSTITUTION: A copper wiring formation method comprises a step of forming a copper layer on a semiconductor substrate, a polishing process, and a relief process. A cleaning agent including a solvent, a reducer, a pH regulator, a complexing agent, and a compound containing Co(II) ion or Co(III) ion is used. Through the relief process, a capping layer is formed on the copper wiring.
Abstract translation: 目的：提供铜布线形成方法，以通过使用清洁剂的CMP浮雕工艺形成作为氧化物和扩散防止层的覆盖层来简化工艺并提高生产率。 构成：铜布线形成方法包括在半导体基板上形成铜层的步骤，抛光工艺和浮雕工艺。 使用包含溶剂，还原剂，pH调节剂，络合剂和含有Co（II）离子或Co（III）离子的化合物的清洁剂。 通过释放处理，在铜布线上形成覆盖层。
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公开(公告)号：KR100732654B1
公开(公告)日：2007-06-28
申请号：KR1020060037586
申请日：2006-04-26
Applicant: 재단법인서울대학교산학협력재단
IPC: H01M8/02
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公开(公告)号：KR100454634B1
公开(公告)日：2004-11-05
申请号：KR1020010068867
申请日：2001-11-06
Applicant: 재단법인서울대학교산학협력재단
IPC: C23C18/40
Abstract: PURPOSE: A method for forming copper film is provided in which formation of copper seed layer and copper electroplating are performed in the same container to prevent oxidation of the seed layer due to exposure to the atmosphere, and separate CVD or PVD apparatus for forming the copper seed layer is not required to reduce production cost. CONSTITUTION: The method comprises the steps of forming an electroless plated copper film on the surface of the object to be plated by dipping an object to be plated into an electroless plating solution comprising copper salt, complexing agent for inhibiting liquid reaction by forming copper ions and ligands, reducing agent for reducing copper ions, and a pH adjusting agent for maintaining a proper pH so that the reducing agent is oxidized; and forming an electroplated copper film on the object to be plated by directly impressing reduction potential to the object to be plated on which the electroless plated copper film is formed with the object to be plated not being taken out from the electroless plating solution, wherein the reducing agent is HCHO (formaldehyde), wherein the complexing agent is EDTA (ethylene-diamine tetraacetic acid), wherein the reduction potential is a potential corresponding to the range where copper exists for pH of the electroless plating solution in Pourbaix diagram for copper, and wherein the reduction potential is -0.5 V vs NHE or less.
Abstract translation: 目的：提供一种形成铜膜的方法，其中在同一容器中进行铜晶种层的形成和电镀铜以防止由于暴露于大气而引起的晶种层的氧化，并且分离用于形成铜的CVD或PVD装置 不需要种子层来降低生产成本。 构成：该方法包括以下步骤：通过将待镀物体浸入包含铜盐，通过形成铜离子来抑制液体反应的络合剂的无电镀溶液中，并在待镀物体的表面上形成化学镀铜膜，和 用于还原铜离子的还原剂和用于维持适当的pH使得还原剂被氧化的pH调节剂; 以及通过直接将还原电位施加到其上形成有化学镀铜膜的被镀物上而使被镀物不从无电镀液中取出来在被镀物上形成电镀铜膜，其中， 还原剂是HCHO（甲醛），其中络合剂是EDTA（乙二胺四乙酸），其中还原电位是对应铜的Pourbaix图中化学镀溶液的pH值存在的范围的电位，以及 其中还原电位相对于NHE为-0.5V以下。
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