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公开(公告)号：KR1020050047888A
公开(公告)日：2005-05-23
申请号：KR1020030081690
申请日：2003-11-18
Applicant: 한국과학기술연구원
Abstract: 본 발명은 랩온어칩(lab-on-a-chip)에 관한 것으로서, 특히 전면 발광을 하는 박막구조의 광원 또는 고휘도 발광 다이오드 배열 광원을 이용하여 랩온어칩의 소형화를 달성할 수 있는 전면 발광 광원을 이용한 랩온어칩에 관한 것이다. 이를 위해 본 발명에 의한 랩온어칩은 높은 광량 및 전면 발광이 가능한 박막구조의 유기 발광 다이오드 또는 탄소나노튜브 램프나 박막구조는 아니지만 이와 동일한 기능을 갖는 있는 고휘도 발광 다이오드 배열 광원을 이용하고, 이러한 광원, 박막형태의 광학필터 및 형광 검출 센서가 적층구조로 형성된다. 따라서, 본 발명은 랩온어칩의 소형화를 달성하고 채널에서의 센서 위치와 광원의 입사 위치를 정렬시켜야 하는 불편함을 제거할 수 있다.
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公开(公告)号：KR1020040034374A
公开(公告)日：2004-04-28
申请号：KR1020030059905
申请日：2003-08-28
Applicant: 한국과학기술연구원
IPC: H05B33/14
CPC classification number: H01L24/10 , H01L24/13 , H01L51/5253 , H01L2224/13 , H01L2224/13099 , H01L2924/01006 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/0102 , H01L2924/01021 , H01L2924/01022 , H01L2924/01033 , H01L2924/0104 , H01L2924/01061 , H01L2924/01073 , H01L2924/12041 , H01L2924/12044 , H01L2924/00
Abstract: PURPOSE: An inorganic thin film is provided to prevent a permeation of a moisture and an oxygen and fabricate the inorganic thin film from an inorganic composite having an inorganic materials more than two with a prescribed ratio. CONSTITUTION: An inorganic thin film(7a) comprises an inorganic composite mixed more than two inorganic materials selected from a group constituted by a metal, a nonmetallic oxide, a nitride, and a salt, and have a permeation prevention characteristics of an improved moisture and an oxygen. The metal and the nonmetallic oxide have a silicon oxide(SiO2), a magnesium oxide(MgO), a calcium oxide(CaO), an aluminum oxide(Al2O3), a titanium oxide(TiO2), a zirconium oxide(ZrO2), a tantalum oxide(Ta2O3), and a sodium oxide(NayOx). The nitride has a silicon nitride(Si3N4), and a magnesium fluoride(MgF2).
Abstract translation: 目的：提供一种无机薄膜，以防止水分和氧气的渗透，并从具有规定比例的无机材料超过两种的无机复合材料制造无机薄膜。 构成：无机薄膜（7a）包含混合多于两种的由金属，非金属氧化物，氮化物和盐构成的组中选择的无机材料的无机复合材料，并且具有改善的水分的防渗透特性， 氧气 金属和非金属氧化物具有氧化硅（SiO 2），氧化镁（MgO），氧化钙（CaO），氧化铝（Al 2 O 3），氧化钛（TiO 2），氧化锆（ZrO 2）， 氧化钽（Ta 2 O 3）和氧化钠（NayOx）。 氮化物具有氮化硅（Si 3 N 4）和氟化镁（MgF 2）。
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公开(公告)号：KR1020040010923A
公开(公告)日：2004-02-05
申请号：KR1020020043962
申请日：2002-07-25
Applicant: 한국과학기술연구원
IPC: H01L23/28
CPC classification number: H01L2224/48091 , H01L2224/97 , H01L2924/00014
Abstract: PURPOSE: A chip scale package of an MEMS(Micro-Electro-Mechanical-System) device and a manufacturing method thereof are provided to be capable of easily carrying out a mounting process at the minimum surface area of an outer circuit board. CONSTITUTION: A chip scale package of an MEMS device is provided with a lower substrate(500) having a plurality of via holes, an upper substrate(400), a plurality of conductive material parts(540) formed at the via holes, and a plurality of MEMS devices(550) loaded at the predetermined portions of the lower substrate. The chip scale package further includes a connection part for electrically connecting the conductive material part with the MEMS device and an adhesive part(430) for attaching the upper substrate to the lower substrate.
Abstract translation: 目的：提供一种MEMS（微电子机械系统）装置的芯片级封装及其制造方法，能够容易地在外部电路板的最小表面积处进行安装处理。 构成：MEMS器件的芯片级封装设置有具有多个通孔的下基板（500），上基板（400），形成在通孔处的多个导电材料部件（540），以及 多个MEMS器件（550）装载在下基板的预定部分。 芯片级封装还包括用于将导电材料部件与MEMS器件电连接的连接部件和用于将上基板连接到下基板的粘合部件（430）。
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公开(公告)号：KR1020030062739A
公开(公告)日：2003-07-28
申请号：KR1020020003098
申请日：2002-01-18
Applicant: 한국과학기술연구원 , 한화나노텍 주식회사
Abstract: PURPOSE: A flat type field emission lamp and a method for manufacturing the same are provided to achieve improved luminous efficiency and obtain a uniform luminous area even when the thickness of the lamp is thin. CONSTITUTION: A field emission lamp comprises a rear substrate(21) and a front substrate opposed with each other; a cathode electrode(22) arranged on the rear substrate; a grid electrode(23) arranged on the rear substrate in such a manner that the grid electrode crosses with the cathode electrode; a spacer(25) for heating and sealing the space formed between the rear substrate and the front substrate; a cathode electrode arranged all over the front substrate; a phosphor deposited on the anode electrode; a carbon nanotube(24) arranged on the cathode electrode and which serves as an electron emitting member; a grid(27) interposed between the cathode electrode and the anode electrode so as to control the electron emitted from the carbon nanotube; a support board(26) disposed on the rear substrate so as to install the grid; and a conductive paste deposited on the outer surface of the support board so as to electrically ground the grid to the grid electrode disposed on the rear substrate.
Abstract translation: 目的：提供扁平型场致发射灯及其制造方法，以便即使当灯的厚度较薄时，也可实现发光效率的提高并获得均匀的发光面积。 构成：场致发射灯包括后基板（21）和彼此相对的前基板; 布置在所述后基板上的阴极电极; 以所述栅电极与所述阴极电极交叉的方式配置在所述后基板上的栅电极（23） 用于加热和密封形成在后基板和前基板之间的空间的间隔件（25） 设置在前基板整个上的阴极电极; 沉积在阳极上的荧光体; 布置在阴极电极上并用作电子发射部件的碳纳米管（24）; 插入在所述阴极电极和所述阳极电极之间以控制从所述碳纳米管发射的电子的栅极（27）; 设置在后基板上以便安装格栅的支撑板（26）; 以及沉积在所述支撑板的外表面上以将所述栅格电电接到设置在所述后基板上的栅电极的导电膏。
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公开(公告)号：KR1020030031334A
公开(公告)日：2003-04-21
申请号：KR1020010063421
申请日：2001-10-15
Applicant: 한국과학기술연구원
CPC classification number: C23C16/0281 , Y10S977/895
Abstract: PURPOSE: A method for fabricating a metallic nanowire is provided to form lots of metal nanowires on a substrate directly without any special lithography process or similar methods. CONSTITUTION: An oxide layer, about 500 nm in thickness, is formed on a wafer in an electric furnace while maintaining its temperature 1100 degree C. A tungsten thin film is deposited on the oxide layer with the width ranging 30 to 1000 nm. The resultant structure is inserted into a low pressure CVD equipment. Grown for 10-4000 seconds under the low pressure ranging 10 mtorr - 100 torr with Ar/H2 gas being flown from 30 to 300 sccm, the tungsten thin film is self-sacrificed to create nanowires. Temperature is kept from 500 to 850 degree C. during the process.
Abstract translation: 目的：提供一种用于制造金属纳米线的方法，其在基底上直接形成许多金属纳米线，而无需任何特殊的光刻工艺或类似方法。 构成：在电炉中的晶片上形成约500nm厚的氧化物层，同时保持其温度为1100℃。在宽度范围为30至1000nm的氧化物层上沉积钨薄膜。 将所得结构插入低压CVD设备中。 在Ar / H2气体从30到300sccm的低压力范围10mtorr-100乇下生长10-4000秒，钨薄膜被自牺牲以产生纳米线。 在此过程中，温度保持在500至850摄氏度。
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Patent Agency Ranking
公开(公告)号：KR100376768B1
公开(公告)日：2003-03-19
申请号：KR1020000048907
申请日：2000-08-23
Applicant: 한국과학기술연구원
CPC classification number: H01L51/0595 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/08 , C23C16/04 , C23C16/26 , C30B25/00 , C30B25/02 , C30B29/605 , D01F9/12 , H01L51/0048 , H01L51/0504 , Y10S977/842
Abstract: 본 발명은 원하는 위치에 직접 탄소나노튜브를 수평방향으로 성장시켜 직접화하는 전자 및 스핀소자 응용을 위한 탄소나노튜브의 선택적 수평성장 방법에 관한 것으로, 고온의 전기로에서 산화법 및 CVD법을 이용하여 기판상에 50~1500nm 범위내의 두께를 갖는 절연막을 형성하는 단계와, 상기 절연막상에 접촉전극 패드를 포함한 촉매금속층의 미세 패턴을 형성하는 단계와, 상기 촉매금속층 상부에 수직성장 장벽층을 형성하는 단계와, 가스압력 10~500torr 범위내의 분위기에서 화학기상증착공정(혹은 플라즈마 공정)을 이용하여 상기 촉매패턴 간에 탄소나노튜브를 직접 성장시키는 단계를 포함하는 것을 특징으로 한다.
Abstract translation: 一种用于电子自旋器件应用的碳纳米管的选择性平行生长方法，其将碳纳米管直接在所需位置朝向水平方向生长包括以下步骤：在基板上形成绝缘膜; 在绝缘膜上形成包括接触电极焊盘的催化剂金属层的精细图案，在催化剂金属层的上部形成用于防止垂直生长的生长阻挡层; 并在催化剂图案之间直接生长碳纳米管。
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公开(公告)号：KR100372168B1
公开(公告)日：2003-02-26
申请号：KR1020000046198
申请日：2000-08-09
Applicant: 한국과학기술연구원
Abstract: PURPOSE: A method for manufacturing an FED of triode carbon nanotubes is provided to manufacture an FED having characteristics like a high mechanical strength, a high electron emission current and low voltage Turn-on by growing selectively carbon nanotubes using CVD process. CONSTITUTION: A gate insulating layer and a gate electrode are formed on a lower substrate. The gate electrode is selectively etched to expose a predetermined portion of the gate insulating layer. A hole is formed by wet-etching and dry-etching the gate insulating layer to expose a predetermined portion of the substrate. A conductive layer having a slant is formed on the gate electrode by using an electron-beam vapor deposition. A thin film metal catalyzer is deposited on the conductive layer and the substrate of the hole, and thereafter carbon nanotubes(106) are deposited and formed selectively at the center of the hole by using CVD. The conductive layer is removed by a lift-off process, and then carbon nanotubes(106) are directly grown on the substrate.
Abstract translation: 目的：提供一种用于制造三极管碳纳米管的FED的方法，其通过使用CVD工艺选择性生长碳纳米管来制造具有诸如高机械强度，高电子发射电流和低电压开启特性的FED。 构成：在下基板上形成栅绝缘层和栅电极。 栅电极被选择性地蚀刻以暴露栅极绝缘层的预定部分。 通过湿法刻蚀并干法刻蚀栅极绝缘层以暴露衬底的预定部分来形成孔。 通过使用电子束气相沉积在栅电极上形成具有倾斜的导电层。 将薄膜金属催化剂沉积在孔的导电层和基底上，然后用CVD法在孔的中心选择性沉积和形成碳纳米管（106）。 通过剥离工艺去除导电层，然后碳纳米管（106）直接生长在衬底上。
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公开(公告)号：KR100356691B1
公开(公告)日：2002-10-18
申请号：KR1020000016605
申请日：2000-03-30
Applicant: 한국과학기술연구원
IPC: H01L21/20
Abstract: 본 발명은 정전 열 접합(Electrostatic bonding)을 이용한 진공실장방법에 관한 것으로, 구체적으로는 반도체 기판과 유리 기판 또는 유리기판과 유리기판간의 정전 열 접합을 이용하여 디스플레이나 마이크로 소자를 진공 실장하는 기술에 관한 것이다. 본 발명은 기존의 배기용 세관 공정에 비해 저온에서 체적이 작은 패널 내부의 진공 효율을 극대화시키고, 실리콘 기판의 입자투과율과 물리적 강도등의 단점을 극복하며, 마이크로 소자의 피드쓰루(Feed-through)를 효율적으로 형성하는 고진공실장방법을 제공한다.
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公开(公告)号：KR1020020012933A
公开(公告)日：2002-02-20
申请号：KR1020000046198
申请日：2000-08-09
Applicant: 한국과학기술연구원
Abstract: PURPOSE: A method for manufacturing an FED of triode carbon nanotubes is provided to manufacture an FED having characteristics like a high mechanical strength, a high electron emission current and low voltage Turn-on by growing selectively carbon nanotubes using CVD process. CONSTITUTION: A gate insulating layer and a gate electrode are formed on a lower substrate. The gate electrode is selectively etched to expose a predetermined portion of the gate insulating layer. A hole is formed by wet-etching and dry-etching the gate insulating layer to expose a predetermined portion of the substrate. A conductive layer having a slant is formed on the gate electrode by using an electron-beam vapor deposition. A thin film metal catalyzer is deposited on the conductive layer and the substrate of the hole, and thereafter carbon nanotubes(106) are deposited and formed selectively at the center of the hole by using CVD. The conductive layer is removed by a lift-off process, and then carbon nanotubes(106) are directly grown on the substrate.
Abstract translation: 目的：提供一种用于制造三极管碳纳米管的FED的方法，以通过使用CVD工艺生长选择性碳纳米管来制造具有诸如高机械强度，高电子发射电流和低电压接通特性的特性的FED。 构成：在下基板上形成栅极绝缘层和栅电极。 选择性地蚀刻栅电极以暴露栅极绝缘层的预定部分。 通过湿蚀刻和干蚀刻栅极绝缘层来形成孔，以暴露基板的预定部分。 通过使用电子束气相沉积在栅电极上形成具有倾斜的导电层。 在导电层和孔的基板上沉积薄膜金属催化剂，然后通过使用CVD沉积并选择性地在孔的中心形成碳纳米管（106）。 通过剥离工艺去除导电层，然后在基板上直接生长碳纳米管（106）。
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公开(公告)号：KR100286252B1
公开(公告)日：2001-04-16
申请号：KR1019970046678
申请日：1997-09-11
Applicant: 한국과학기술연구원
IPC: H01L21/00
Abstract: PURPOSE: A electrostatic thermal junction formation method of a semiconductor substrate is provided to short a junction process time and reduce a cost of a products by deposing a mixed compound of a metal oxide and a silicon oxide on the substrate to use as an intermediate layer for connecting both of semiconductor substrates. CONSTITUTION: A semiconductor substrate is cleaned by a cleaning process. A mixed compound of a metal oxide and a silicon oxide is deposited on the cleaned substrate. A substrate having the mixed compound is cleaned. The substrate having the mixed compound is applied by a temperature of 10-500 °C and a general semiconductor substrate is applied by a voltage of 10-400 V and both substrate is connected. Acetone, methanol, or deionized water are used for the cleaning process. The deposition process of the mixed compounds of the metal oxide and a silicon oxide is performed by using an electron beam deposition method.
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