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公开(公告)号：KR101406704B1
公开(公告)日：2014-06-12
申请号：KR1020130042782
申请日：2013-04-18
Applicant: 한국에너지기술연구원
IPC: H01L31/06 , H01L31/042 , H01L31/18
CPC classification number: H01L31/0322 , Y02E10/541
Abstract: The present invention relates to a method of manufacturing a quality CZTSe light absorption thin film based on a simultaneous vacuum evaporation process. The method includes: (a) a step of depositing Cu, Zn, Sn, and Se onto a substrate by evaporating the same simultaneously; and (b) a step of lowering the temperature of the substrate and depositing Zn, Sn, and Se by evaporating the same simultaneously. By performing a simultaneous vacuum evaporation process and then performing an additional evaporation process while lowering the temperature of the substrate, the present invention is able to resolve the problems due to the loss of Sn accompanied in a high-temperature simultaneous vacuum evaporation process. A CZTSe light absorption thin film manufactured by the manufacturing method given in the present invention has excellent membranous property so that a CZTSe solar cell manufactured using the same is able to have improved photoelectric conversion efficiency.
Abstract translation: 本发明涉及一种基于同时真空蒸镀工艺制造质量好的CZTSe光吸收薄膜的方法。 该方法包括：（a）通过同时蒸发将Cu，Zn，Sn和Se沉积到衬底上的步骤; 和（b）降低衬底温度并同时蒸发Zn，Sn和Se的步骤。 通过同时进行真空蒸发处理，然后在降低基板的温度的同时进行额外的蒸发处理，本发明能够解决由于伴随着高温同时真空蒸发处理而引起的Sn的损失的问题。 通过本发明的制造方法制造的CZTSe光吸收薄膜具有优异的膜性质，因此使用其制造的CZTSe太阳能电池能够提高光电转换效率。
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公开(公告)号：KR1020140038200A
公开(公告)日：2014-03-28
申请号：KR1020120104629
申请日：2012-09-20
Applicant: 한국에너지기술연구원
CPC classification number: C23C14/243 , C23C14/564 , C30B23/066
Abstract: Disclosed are a vacuum evaporation source with a source residue discharge type shutter and an evaporation device including the same. The vacuum evaporation source with the source residue discharge type shutter comprises a vacuum evaporation source body including an outer container which provides a cylindrical inner space, a crucible which is mounted inside the outer container, and a heater which is arranged between the outer container and the crucible and heats the crucible; and a shutter which is disposed at the output side of the vacuum evaporation source body to open and close the output of the crucible and has multiple flow guides extended from an area corresponding to the output of the crucible to the outer area of the outer container to discharge a source residue condensed at the inner surface facing the output of the crucible to the outside of the outer container. The evaporation device according to the present invention has the above-described configuration and comprises multiple vacuum evaporation sources disposed to be inclined to the center of a substrate in a vacuum chamber.
Abstract translation: 公开了一种具有源极残渣放电型快门的真空蒸发源和包括其的蒸发装置。 具有源残渣排放型活门的真空蒸发源包括：真空蒸发源体，其包括提供圆柱形内部空间的外部容器;安装在外部容器内部的坩埚;以及加热器，其设置在外部容器和 坩埚加热坩埚; 以及快门，其设置在真空蒸发源体的输出侧，以打开和关闭坩埚的输出，并且具有从与坩埚的输出对应的区域延伸到外部容器的外部区域的多个流动引导件， 将在面向坩埚输出的内表面处冷凝的源残渣排出到外容器的外部。 根据本发明的蒸发装置具有上述结构，并且包括多个真空蒸发源，其设置成在真空室中倾斜于基板的中心。
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43.发明授权이성분계 나노입자를 포함하는 슬러리의 숙성 단계가 도입된 ＣＩ(Ｇ)Ｓ계 박막의 제조방법 및 그 방법에 의해 제조된 ＣＩ(Ｇ)Ｓ계 박막 有权制备CI（G）S基薄膜的方法，介绍了包含二元纳米粒子和其制备的CI（G）S基薄膜的浆料的老化步骤
公开(公告)号：KR101369167B1
公开(公告)日：2014-03-14
申请号：KR1020120080991
申请日：2012-07-25
Applicant: 한국에너지기술연구원
IPC: H01L31/0749 , H01L31/042 , H01L31/18
CPC classification number: Y02E10/50 , Y02P70/521
Abstract: 이성분계 나노입자를 포함하는 슬러리의 숙성 단계가 도입된 ＣＩ(Ｇ)Ｓ계 박막의 제조방법 및 그 방법에 의해 제조된 ＣＩ(Ｇ)Ｓ계 박막이 제공된다. 본 발명의 CI(G)S계 박막의 제조방법은, CI(G)S계의 이성분계 나노입자를 제조하는 단계; 상기 이성분계 나노입자, CI(G)S계 원소를 포함하는 용액 전구체, 용매 및 킬레이트제를 혼합하여 하이브리드형 슬러리를 제조하는 단계; 상기 하이브리드형 슬러리를 5일 내지 10일 동안 숙성하는 단계; 숙성된 하이브리드형 슬러리를 코팅하여 CI(G)S계 박막을 형성하는 단계; 및 상기 형성된 CI(G)S 박막에 열처리하는 단계를 포함한다. 이에 의하여, CI(G)S계 태양전지 박막 제조 시 우수한 재현성 확보가 가능하고, 따라서 생산된 박막의 신뢰도를 향상시킬 수 있다.
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公开(公告)号：KR101282291B1
公开(公告)日：2013-07-10
申请号：KR1020120022668
申请日：2012-03-06
Applicant: 한국에너지기술연구원
IPC: H01L31/042 , H01L31/0236 , H01L31/18
CPC classification number: H01L31/1828 , H01G9/204 , H01G9/2059 , H01G9/209 , H01L31/02366 , H01L31/1888 , H01L51/42 , H01L51/4233 , H01L51/447 , Y02E10/542 , Y02E10/549
Abstract: PURPOSE: A method for forming a ZnO concavo-convex structure and a solar cell using the same are provided to form a uniform thin film on a concavo-convex structure by using a wet etching method. CONSTITUTION: A substrate (10) is prepared. A nanostructure (20) of which height and width is nanometer scale is formed. A zinc oxide thin film (30) is formed on the substrate having the nanostructure. The zinc oxide thin film is wet-etched. A concavo-convex structure (35) is formed by etching the periphery of the nanostructure.
Abstract translation: 目的：提供一种用于形成ZnO凹凸结构的方法和使用其的太阳能电池，以通过使用湿式蚀刻方法在凹凸结构上形成均匀的薄膜。 构成：制备基材（10）。 形成高度和宽度为纳米级的纳米结构（20）。 在具有纳米结构的基板上形成氧化锌薄膜（30）。 氧化锌薄膜被湿式蚀刻。 通过蚀刻纳米结构的周边形成凹凸结构（35）。
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公开(公告)号：KR1020120110496A
公开(公告)日：2012-10-10
申请号：KR1020110028388
申请日：2011-03-29
Applicant: 한국에너지기술연구원
IPC: H01L31/054 , H01L31/0445 , H01L31/18
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/054 , H01L31/0445 , H01L31/18
Abstract: PURPOSE: A rear reflective film for a thin film solar cell, a forming method thereof and the thin film solar cell including the same are provided to improve the scattering reflectance of a wavelength area by improving the surface illumination of the rear reflective film. CONSTITUTION: An aluminum layer(22) is formed on a substrate. One or more materials selected from Si, O, Cu and Pt dope the aluminum layer. The doped aluminum layer intensifies crystal growth. A transparent conductive film(24) is formed on the surface of the doped aluminum layer. A silver coating layer(23) is formed on the doped aluminum layer.
Abstract translation: 目的：提供一种用于薄膜太阳能电池的后反射膜，其形成方法和包括该反射膜的薄膜太阳能电池，以通过改进后反射膜的表面照明来改善波长区域的散射反射率。 构成：在基板上形成铝层（22）。 选自Si，O，Cu和Pt中的一种或多种材料掺杂铝层。 掺杂的铝层增强晶体生长。 在掺杂的铝层的表面上形成透明导电膜（24）。 在掺杂的铝层上形成银涂层（23）。
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Patent Agency Ranking
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公开(公告)号：KR101880640B1
公开(公告)日：2018-07-23
申请号：KR1020170053967
申请日：2017-04-26
Applicant: 한국에너지기술연구원
IPC: H01L31/0236 , H01L31/18 , H01L31/0224 , H01L31/0216 , H01L31/0392 , H02S20/22
CPC classification number: Y02A30/62 , Y02B10/10 , Y02E10/50 , Y02P70/521 , H01L31/02366 , H01L31/02167 , H01L31/022425 , H01L31/022441 , H01L31/0392 , H01L31/18 , H02S20/22
Abstract: 본발명은태양전지및 이의제조방법에관한것으로서, 기판상에위치하는후면전극층; 상기후면전극층상에위치하는광흡수층; 상기광흡수층상에위치하는버퍼층및 전면전극층; 상기후면전극층을복수개로분할하는투광영역이형성된투광부; 상기투광부의일측에위치하며상기광흡수층과버퍼층을관통하여상기후면전극층의일부를노출시키는제1패턴부; 및, 상기제1패턴부에상기전면전극층을적층한상태에서전면전극층을관통하여후면전극층의일부를노출시키는제2패턴부를포함하되, 상기투광부는상기후면전극층의상면보다높게형성되는동시에광흡수층의상면보다낮게형성된것을특징으로한다.
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公开(公告)号：KR101821628B1
公开(公告)日：2018-01-25
申请号：KR1020160054207
申请日：2016-05-02
Applicant: 한국에너지기술연구원
Abstract: 본발명은우주용순환식태양광발전장치에관한것으로, 하나이상의태양전지모듈; 상기태양전지모듈들이부착되며, 태양전지모듈이태양광을받아서발전하는광발전위치와반대편에서태양광을받지않는회복위치를순환할수 있도록하는컨베이어벨트; 상기컨베이어벨트를움직이기위한구동부; 및상기회복위치에있는태양전지모듈에입사되는우주방사선을차단하기위한보호판을포함하여구성된것을특징으로한다. 본발명은, 태양광을받지않는회복위치에서우주방사선을차폐하는보호판을구비함으로써, 태양전지모듈이회복위치에서데미지를회복하고다시광발전위치로이동하여광발전을수행할수 있는효과가있다. 또한, 본발명의우주용태양광발전장치는, 태양전지모듈의일부가광발전위치에서발전을수행하는동안에나머지태양전지모듈은우주방사선을차폐하는보호판에의해보호되는회복위치에서데미지를회복함으로써, 태양전지모듈이광발전위치와회복위치를순환적으로이동하면서가혹한우주환경에서도장시간태양광발전을수행할수 있는효과가있다.
Abstract translation: 太空循环太阳能发电装置技术领域本发明涉及一种太空循环太阳能发电装置， 将太阳能电池组件连接到一个传送装置将被太阳能电池模块在恢复位置光伏发电位置和另一侧，以接收太阳光不是太阳能带分发; 用于移动传送带的驱动单元; 并且在恢复位置处用于阻挡入射在太阳能电池模块上的宇宙射线的保护板。 本发明中，通过提供一种屏蔽板屏蔽在回收位置处的空间辐射在它不接收太阳光时，太阳能电池模块，以恢复从恢复位置的恶化，并再次移动到光伏位置，存在可以进行发电的效果。 此外，本发明的空间医学病症提升发电装置中，太阳能电池模块的剩余部分是同时在发电位置进行发电回收到由一个保护板，用于屏蔽空间辐射保护在回收位置处的损伤的太阳能电池模块， 太阳能电池组件可以循环发电和恢复位置的位置，从而在严酷的空间环境中实现长期的太阳能发电。
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公开(公告)号：KR1020170124379A
公开(公告)日：2017-11-10
申请号：KR1020160054207
申请日：2016-05-02
Applicant: 한국에너지기술연구원
CPC classification number: B64G1/10 , B64G1/44 , H01L31/041 , H02S20/00 , H02S40/22 , Y02E10/50 , B64G1/443 , H02S20/30 , Y02E10/52
Abstract: 본발명은우주용순환식태양광발전장치에관한것으로, 하나이상의태양전지모듈; 상기태양전지모듈들이부착되며, 태양전지모듈이태양광을받아서발전하는광발전위치와반대편에서태양광을받지않는회복위치를순환할수 있도록하는컨베이어벨트; 상기컨베이어벨트를움직이기위한구동부; 및상기회복위치에있는태양전지모듈에입사되는우주방사선을차단하기위한보호판을포함하여구성된것을특징으로한다. 본발명은, 태양광을받지않는회복위치에서우주방사선을차폐하는보호판을구비함으로써, 태양전지모듈이회복위치에서데미지를회복하고다시광발전위치로이동하여광발전을수행할수 있는효과가있다. 또한, 본발명의우주용태양광발전장치는, 태양전지모듈의일부가광발전위치에서발전을수행하는동안에나머지태양전지모듈은우주방사선을차폐하는보호판에의해보호되는회복위치에서데미지를회복함으로써, 태양전지모듈이광발전위치와회복위치를순환적으로이동하면서가혹한우주환경에서도장시간태양광발전을수행할수 있는효과가있다.
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