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公开(公告)号：KR1020070040709A
公开(公告)日：2007-04-17
申请号：KR1020060015636
申请日：2006-02-17
Applicant: 한국전자통신연구원
CPC classification number: G01K3/005 , G01K7/22 , G08B17/06 , G08B3/1025 , G08B5/22
Abstract: Provided are a temperature sensor using a metal-insulator transition (MIT) device subject to abrupt MIT at a specific temperature and an alarm including the temperature sensor. The abrupt MIT device includes an abrupt MIT thin film and at least two electrode thin films that contacts the abrupt MIT thin film. The abrupt MIT device generates abrupt metal-insulator transition at a specific transition temperature. The alarm includes a temperature sensor comprising an abrupt MIT device, and an alarm signaling device serially connected to the temperature sensor. Accordingly, the alarm can be manufactured to have a simple circuit and be of a small size by including the temperature sensor using an abrupt MIT device.
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公开(公告)号：KR100687760B1
公开(公告)日：2007-02-27
申请号：KR1020060017888
申请日：2006-02-23
Applicant: 한국전자통신연구원
IPC: H01L21/316
Abstract: An insulator experiencing abruptly metal-insulator transition and a method for manufacturing the same, and a device using the same are provided to quickly transit metal and insulator without changing a structure of the insulator. An insulator is abruptly transited into a metal by energy variation between electrons, without changing its structure, and has an energy band gap of 2 eV or more. The energy variation is conducted by changing temperature, pressure and electric field applied from an exterior. The insulator is any one of Al oxide, Ti oxide, and oxide of Al-Ti alloy. A device includes a substrate(10), a first insulator thin film formed on the substrate, and at least two electrodes(16,18) spaced apart from each by the insulator thin film.
Abstract translation: 提供了一种经历突然金属 - 绝缘体转变的绝缘体及其制造方法，以及使用该绝缘体的装置，以快速转移金属和绝缘体而不改变绝缘体的结构。 绝缘体通过电子之间的能量变化而突然转变为金属，而不改变其结构，并且具有2eV或更大的能带隙。 能量变化通过改变从外部施加的温度，压力和电场来进行。 绝缘体是Al氧化物，Ti氧化物和Al-Ti合金的氧化物中的任何一种。 一种器件包括衬底（10），在衬底上形成的第一绝缘体薄膜，以及至少两个由绝缘体薄膜隔开的电极（16,18）。
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公开(公告)号：KR1020070014939A
公开(公告)日：2007-02-01
申请号：KR1020060018506
申请日：2006-02-25
Applicant: 한국전자통신연구원
CPC classification number: G01R31/1245 , H01L49/003
Abstract: A partial discharge measuring device and a measuring system having the same are provided to check partial discharge without external noise by bypassing current generated due to the partial discharge by rapid metal-insulator transition through an arrester unit. A partial discharge measuring device includes an arrester unit(140) conducted with partial discharge of a gas insulator executing rapid metal-insulator transition; a first electrode(150) electrically connected to the arrester unit to detect the partial discharge and have a first resistance value; and at least one second electrode(160) connected with the first electrode in parallel, wherein the second electrode has a resistance value smaller than the resistance value of the first electrode. The insulator is SF6(Sulfur Hexafluoride) gas.
Abstract translation: 提供了一种局部放电测量装置及其测量系统，以通过绕过由于通过避雷器单元的快速金属 - 绝缘体转变而产生的局部放电产生的电流来检查没有外部噪声的局部放电。 局部放电测量装置包括：执行快速金属 - 绝缘体转换的气体绝缘体的局部放电导管的避雷器单元（140）; 电连接到避雷器单元以检测局部放电并具有第一电阻值的第一电极（150） 以及与第一电极并联连接的至少一个第二电极（160），其中第二电极具有小于第一电极的电阻值的电阻值。 绝缘子是SF6（六氟化硫）气体。
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公开(公告)号：KR1020070003529A
公开(公告)日：2007-01-05
申请号：KR1020060015634
申请日：2006-02-17
Applicant: 한국전자통신연구원
IPC: H01L27/115
CPC classification number: H01L27/10 , B82Y10/00 , G11C13/0007 , G11C13/0014 , G11C2213/32 , G11C2213/51 , H01L29/8615 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/146 , H01L45/148 , H01L49/003
Abstract: A memory device using abrupt metal-insulator transition and a method for operating the same are provided to define an on-state by using a conductive path covering the abrupt metal-insulator transition material layer. A memory device comprises a substrate(102), a metal-insulator transition material layer disposed on the substrate for undergoing abrupt metal insulator transition by energy change between electrons, and at least two electrodes contacting the metal-insulator transition material layer and melted by heat to form a conductive path on the metal-insulator transition material layer. The metal-insulator transition material layer contains at least one selected from the group consisting of an inorganic compound semiconductor or insulator material to which low-concentration holes are added, an organic semiconductor or insulator material to which low-concentration holes are added, a semiconductor material to which low-concentration holes are added, and an oxide semiconductor or insulator material to which low-concentration holes are added.
Abstract translation: 提供使用突变金属 - 绝缘体转变的存储器件及其操作方法，以通过使用覆盖突变金属 - 绝缘体转移材料层的导电路径来限定导通状态。 存储器件包括衬底（102），设置在衬底上的金属 - 绝缘体转变材料层，用于通过电子之间的能量变化进行突然的金属绝缘体转变，以及至少两个接触金属 - 绝缘体转变材料层的电极并通过热量熔化 以在金属 - 绝缘体转变材料层上形成导电路径。 金属 - 绝缘体过渡材料层含有从添加有低浓度空穴的无机化合物半导体或绝缘体材料中选择的至少一种，添加低浓度孔的有机半导体或绝缘体材料，半导体 添加低浓度孔的材料和添加有低浓度孔的氧化物半导体或绝缘体材料。
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公开(公告)号：KR101923726B1
公开(公告)日：2018-11-29
申请号：KR1020130028122
申请日：2013-03-15
Applicant: 한국전자통신연구원
Abstract: 본발명은화재감지시스템을개시한다. 그의시스템은, 전원과, 상기전원에연결되어화재발생을표시하는표시부와, 상기전원에연결되어화재발생을감지하는금속-절연체전이(MIT) 소자를포함한다. 여기서, 상기금속-절연체전이소자는, 기판과상기기판상의복수개의제 1 전극들과, 상기제 1 전극들각각에연결된바나듐옥사이드의금속-절연체전이물질들과, 상기금속-절연체전이물질들을직렬로연결하는제 2 전극을포함할수 있다.
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Patent Agency Ranking
公开(公告)号：KR1020140049917A
公开(公告)日：2014-04-28
申请号：KR1020130028117
申请日：2013-03-15
Applicant: 한국전자통신연구원
IPC: H01L31/101 , H01L31/109
CPC classification number: H01L31/09 , H01L31/0224 , H01L31/03046 , H01L31/062
Abstract: The present invention discloses an ambient light sensor based on a metal-insulator transition (MIT) phenomenon. The sensor comprises: a substrate; a buffer layer on the substrate; a plurality of electrodes separated on the buffer layer; and a detection layer coupled into the electrodes and detecting the area of visible light and the infrared light. Herein, the detection layer may include an aluminium gallium arsenic layer or a superlattice layer of the aluminium galliumarsenic layer and a galliumarsenic layer.
Abstract translation: 本发明公开了一种基于金属 - 绝缘体转变（MIT）现象的环境光传感器。 传感器包括：基板; 衬底上的缓冲层; 在所述缓冲层上分离的多个电极; 以及耦合到电极中并检测可见光和红外光的区域的检测层。 这里，检测层可以包括铝镓砷层或铝镓砷层的超晶格层和镓砷层。
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47.发明公开
公开(公告)号：KR1020130047558A
公开(公告)日：2013-05-08
申请号：KR1020120073002
申请日：2012-07-04
Applicant: 한국전자통신연구원
CPC classification number: H01L49/003
Abstract: PURPOSE: A technology for reducing ESD noise in a metal-insulator transition device and an electronic system are provided to effectively remove the static electricity of the electronic system by using a metal-insulator transition 3 terminal element. CONSTITUTION: A first semiconductor region(10) of a first conductivity functions as an outlet region. A second semiconductor region(20) of a second conductivity functions as a control region. The concentration of the second semiconductor region of the second conductivity has the moat critical concentration of the upper part of the first semiconductor region of the first conductivity. A third semiconductor region(30) of the first conductivity functions as an inlet region. An MIT 3 terminal element consists of three terminals(12,22,32) for an inlet(I), an outlet(O), and a control(C).
Abstract translation: 目的：提供一种用于减少金属 - 绝缘体转换装置和电子系统中的ESD噪声的技术，以通过使用金属 - 绝缘体转换3端子元件来有效地去除电子系统的静电。 构成：第一导电性的第一半导体区域（10）用作出口区域。 具有第二导电性的第二半导体区域（20）用作控制区域。 第二导电性的第二半导体区域的浓度具有第一导电率的第一半导体区域的上部的护城河临界浓度。 第一导电性的第三半导体区域（30）用作入口区域。 MIT 3端子元件由用于入口（I），出口（O）和控制（C）的三个端子（12,22,32）组成。
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公开(公告)号：KR1020120136272A
公开(公告)日：2012-12-18
申请号：KR1020110138355
申请日：2011-12-20
Applicant: 한국전자통신연구원
CPC classification number: G08B17/10 , G08B17/06 , G08B17/113
Abstract: PURPOSE: A complex alarm system and a smoke sensor equipped therewith are provided to sense smoke by a thermo-sensitive smoke sensing part including metal-insulator composite, thereby increasing safety. CONSTITUTION: A smoke sensing unit(30) comprises a first sensor and a second sensor which sense smoke. The first sensor and the second sensor include a thermo-sensitive smoke sensing part(22). A smoke level measuring unit(40) compares the signal from the first and second sensors with the set-up criteria value, and generates a signal of the measured smoke level. A sensing controlling unit(50) receives the signal of the measured smoke level and generates a fire alarm signal. [Reference numerals] (10) Smoke sensor; (20) Reference sensor; (30) Smoke sensing unit; (40) Smoke level measuring unit; (42) First comparator; (44) Second comparator; (50) Sensing control unit(CPU); (60) Communication unit; (AA) Reference signal
Abstract translation: 目的：提供一种复杂的报警系统和配备烟雾传感器的感光烟感应部件，包括金属 - 绝缘体复合材料，从而提高安全性。 构成：烟雾感测单元（30）包括第一传感器和感测烟雾的第二传感器。 第一传感器和第二传感器包括热敏烟感测部件（22）。 烟度测量单元（40）将来自第一和第二传感器的信号与设置标准值进行比较，并产生所测量的烟雾水平的信号。 感测控制单元（50）接收测量的烟雾水平的信号并产生火灾报警信号。 （附图标记）（10）烟雾传感器; （20）参考传感器; （30）烟感觉单元; （40）烟度测量单元; （42）第一比较器; （44）第二比较; （50）感应控制单元（CPU）; （60）通讯单元; （AA）参考信号
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公开(公告)号：KR1020120082328A
公开(公告)日：2012-07-23
申请号：KR1020110116466
申请日：2011-11-09
Applicant: 한국전자통신연구원
CPC classification number: G05F3/02 , G05F3/16 , H02M2001/327
Abstract: PURPOSE: A constant current circuit of high efficiency is provided to maximize or increase the efficiency of a transistor by improving loss of a base current. CONSTITUTION: An end of a load(2) is connected to a power voltage source. A heat generator(10) is connected between an end of a load and advanced power and ground connections resistance. The heat generator inhibits thermal runaway effect of a semiconductor. A first transistor(12) is connected to an end of a load in parallel with a heat control unit. The first transistor increases current efficiency of a heat controller. A second transistor(14) is connected between an advanced power and ground connections resistance and the first transistor. The second transistor is switched according to a node voltage of the advanced power and ground connections resistance. The second transistor maintains a constant current flow of the advanced power and ground connections resistance.
Abstract translation: 目的：提供高效率的恒流电路，以通过改善基极电流的损耗来最大化或提高晶体管的效率。 构成：负载端（2）连接到电源电压源。 发电机（10）连接在负载端和高级电源和接地连接电阻之间。 热发生器抑制半导体的热失控效应。 第一晶体管（12）与热控制单元并联连接到负载的端部。 第一个晶体管提高了热控制器的电流效率。 第二晶体管（14）连接在高级电源和接地连接电阻和第一晶体管之间。 第二晶体管根据先进电源和接地连接电阻的节点电压进行切换。 第二晶体管保持先进的电源和接地电阻的恒定电流流动。
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公开(公告)号：KR1020120034548A
公开(公告)日：2012-04-12
申请号：KR1020110052822
申请日：2011-06-01
Applicant: 한국전자통신연구원
Abstract: PURPOSE: A constant-current circuit is provided to prevent a heat congestion phenomenon of a load using reverse bias voltage properties of a bipolar transistor. CONSTITUTION: A constant-current circuit comprises a load(10) and a constant-current supply part. The constant-current supply part comprises a first bipolar transistor(TR1) and a second bipolar transistor(TR2). One end of the load is connected to a power voltage source. An emitter of the first bipolar transistor is connected to the other end of the load and a collector is connected to ground. A base of the first bipolar transistor receives base voltage for generating a constant-current. Rectifying voltage applied between the emitter and the collector of the first bipolar transistor is proportional to power voltage from the power voltage source.
Abstract translation: 目的：提供恒流电路，以防止使用双极晶体管的反向偏置电压特性的负载的热量拥挤现象。 构成：恒流电路包括负载（10）和恒流供电部分。 恒流供应部分包括第一双极晶体管（TR1）和第二双极晶体管（TR2）。 负载的一端连接到电源电压源。 第一双极晶体管的发射极连接到负载的另一端，并且集电极连接到地。 第一双极晶体管的基极接收用于产生恒定电流的基极电压。 施加在第一双极晶体管的发射极和集电极之间的整流电压与来自电源电压源的功率电压成比例。
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