Abstract:
Provided are a temperature sensor using a metal-insulator transition (MIT) device subject to abrupt MIT at a specific temperature and an alarm including the temperature sensor. The abrupt MIT device includes an abrupt MIT thin film and at least two electrode thin films that contacts the abrupt MIT thin film. The abrupt MIT device generates abrupt metal-insulator transition at a specific transition temperature. The alarm includes a temperature sensor comprising an abrupt MIT device, and an alarm signaling device serially connected to the temperature sensor. Accordingly, the alarm can be manufactured to have a simple circuit and be of a small size by including the temperature sensor using an abrupt MIT device.
Abstract:
An insulator experiencing abruptly metal-insulator transition and a method for manufacturing the same, and a device using the same are provided to quickly transit metal and insulator without changing a structure of the insulator. An insulator is abruptly transited into a metal by energy variation between electrons, without changing its structure, and has an energy band gap of 2 eV or more. The energy variation is conducted by changing temperature, pressure and electric field applied from an exterior. The insulator is any one of Al oxide, Ti oxide, and oxide of Al-Ti alloy. A device includes a substrate(10), a first insulator thin film formed on the substrate, and at least two electrodes(16,18) spaced apart from each by the insulator thin film.
Abstract:
A partial discharge measuring device and a measuring system having the same are provided to check partial discharge without external noise by bypassing current generated due to the partial discharge by rapid metal-insulator transition through an arrester unit. A partial discharge measuring device includes an arrester unit(140) conducted with partial discharge of a gas insulator executing rapid metal-insulator transition; a first electrode(150) electrically connected to the arrester unit to detect the partial discharge and have a first resistance value; and at least one second electrode(160) connected with the first electrode in parallel, wherein the second electrode has a resistance value smaller than the resistance value of the first electrode. The insulator is SF6(Sulfur Hexafluoride) gas.
Abstract:
A memory device using abrupt metal-insulator transition and a method for operating the same are provided to define an on-state by using a conductive path covering the abrupt metal-insulator transition material layer. A memory device comprises a substrate(102), a metal-insulator transition material layer disposed on the substrate for undergoing abrupt metal insulator transition by energy change between electrons, and at least two electrodes contacting the metal-insulator transition material layer and melted by heat to form a conductive path on the metal-insulator transition material layer. The metal-insulator transition material layer contains at least one selected from the group consisting of an inorganic compound semiconductor or insulator material to which low-concentration holes are added, an organic semiconductor or insulator material to which low-concentration holes are added, a semiconductor material to which low-concentration holes are added, and an oxide semiconductor or insulator material to which low-concentration holes are added.
Abstract:
The present invention discloses an ambient light sensor based on a metal-insulator transition (MIT) phenomenon. The sensor comprises: a substrate; a buffer layer on the substrate; a plurality of electrodes separated on the buffer layer; and a detection layer coupled into the electrodes and detecting the area of visible light and the infrared light. Herein, the detection layer may include an aluminium gallium arsenic layer or a superlattice layer of the aluminium galliumarsenic layer and a galliumarsenic layer.
Abstract:
PURPOSE: A technology for reducing ESD noise in a metal-insulator transition device and an electronic system are provided to effectively remove the static electricity of the electronic system by using a metal-insulator transition 3 terminal element. CONSTITUTION: A first semiconductor region(10) of a first conductivity functions as an outlet region. A second semiconductor region(20) of a second conductivity functions as a control region. The concentration of the second semiconductor region of the second conductivity has the moat critical concentration of the upper part of the first semiconductor region of the first conductivity. A third semiconductor region(30) of the first conductivity functions as an inlet region. An MIT 3 terminal element consists of three terminals(12,22,32) for an inlet(I), an outlet(O), and a control(C).
Abstract:
PURPOSE: A complex alarm system and a smoke sensor equipped therewith are provided to sense smoke by a thermo-sensitive smoke sensing part including metal-insulator composite, thereby increasing safety. CONSTITUTION: A smoke sensing unit(30) comprises a first sensor and a second sensor which sense smoke. The first sensor and the second sensor include a thermo-sensitive smoke sensing part(22). A smoke level measuring unit(40) compares the signal from the first and second sensors with the set-up criteria value, and generates a signal of the measured smoke level. A sensing controlling unit(50) receives the signal of the measured smoke level and generates a fire alarm signal. [Reference numerals] (10) Smoke sensor; (20) Reference sensor; (30) Smoke sensing unit; (40) Smoke level measuring unit; (42) First comparator; (44) Second comparator; (50) Sensing control unit(CPU); (60) Communication unit; (AA) Reference signal
Abstract:
PURPOSE: A constant current circuit of high efficiency is provided to maximize or increase the efficiency of a transistor by improving loss of a base current. CONSTITUTION: An end of a load(2) is connected to a power voltage source. A heat generator(10) is connected between an end of a load and advanced power and ground connections resistance. The heat generator inhibits thermal runaway effect of a semiconductor. A first transistor(12) is connected to an end of a load in parallel with a heat control unit. The first transistor increases current efficiency of a heat controller. A second transistor(14) is connected between an advanced power and ground connections resistance and the first transistor. The second transistor is switched according to a node voltage of the advanced power and ground connections resistance. The second transistor maintains a constant current flow of the advanced power and ground connections resistance.
Abstract:
PURPOSE: A constant-current circuit is provided to prevent a heat congestion phenomenon of a load using reverse bias voltage properties of a bipolar transistor. CONSTITUTION: A constant-current circuit comprises a load(10) and a constant-current supply part. The constant-current supply part comprises a first bipolar transistor(TR1) and a second bipolar transistor(TR2). One end of the load is connected to a power voltage source. An emitter of the first bipolar transistor is connected to the other end of the load and a collector is connected to ground. A base of the first bipolar transistor receives base voltage for generating a constant-current. Rectifying voltage applied between the emitter and the collector of the first bipolar transistor is proportional to power voltage from the power voltage source.