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公开(公告)号:AP201407781A0
公开(公告)日:2014-07-31
申请号:AP201407781
申请日:2012-12-13
Applicant: ADVANCED TECH MATERIALS
Inventor: JIANG PING , KORZENSKI MICHAEL B , CHEN TIANNIU
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公开(公告)号:AP2014007781A0
公开(公告)日:2014-07-31
申请号:AP2014007781
申请日:2012-12-13
Applicant: ADVANCED TECH MATERIALS
Inventor: JIANG PING , KORZENSKI MICHAEL B , CHEN TIANNIU
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公开(公告)号:AP2014007373A0
公开(公告)日:2014-01-31
申请号:AP2014007373
申请日:2012-06-19
Applicant: ADVANCED TECH MATERIALS
Inventor: KORZENSKI MICHAEL B , PAL RESHMA , MUOLLO LAURA R
IPC: H01M10/54 , B09B3/00 , C09K23/38 , H01M4/525 , H01M10/052
Abstract: A method of recovering lithium cobalt oxide from spent lithium ion batteries, wherein said method is more environmentally friendly than the methods presently known in the art. The method includes a froth flotation step using renewable and biodegradable solvents such as terpenes and formally hydrated terpenes. The method can also include a relithiation step to return the Li:Co ratio back to about 1:1 for use in second-life applications.
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公开(公告)号:CL2013000500A1
公开(公告)日:2013-09-23
申请号:CL2013000500
申请日:2013-02-20
Applicant: ADVANCED TECH MATERIALS
Inventor: KORZENSKI MICHAEL B , JIANG PING , NORMAN JAMES , WARNER JOHN , INGALLS LAURA , GNANAMGARI DINAKAR , STRICKLER FRED , MENDUM TED
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公开(公告)号:SG173172A1
公开(公告)日:2011-08-29
申请号:SG2011054442
申请日:2010-01-26
Applicant: ADVANCED TECH MATERIALS
Inventor: CHEN TIANNIU , BILODEAU STEVEN , BOGGS KARL E , JIANG PING , KORZENSKI MICHAEL B , MIRTH GEORGE , VAN BERKEL KIM
Abstract: Compositions and methods of using the said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of the said apparatus. The said compositions comprise at least one organic solvent and one non-ionic surfactant. Moreover, the pH of the said composition is about 5 to 9.
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公开(公告)号:DE60323143D1
公开(公告)日:2008-10-02
申请号:DE60323143
申请日:2003-10-27
Applicant: ADVANCED TECH MATERIALS
Inventor: KORZENSKI MICHAEL B , GHENCIU ELIODOR G , XU CHONGYING , BAUM THOMAS H
IPC: C09K13/00 , C03C15/00 , C09K13/04 , C09K13/06 , C09K13/08 , C11D7/08 , C11D7/10 , C11D7/26 , C11D7/32 , C11D7/50 , C11D11/00 , H01L21/02 , H01L21/302 , H01L21/3213
Abstract: A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO 2 (SCCO2), alcohol, fluoride source, an aluminum ion complexing agent and, optionally, corrosion inhibitor. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the post-etch residue and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having ashed or unashed aluminum/SiN/Si post-etch residue thereon.
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公开(公告)号:SG145704A1
公开(公告)日:2008-09-29
申请号:SG2008056954
申请日:2004-07-28
Applicant: ADVANCED TECH MATERIALS
Inventor: XU CHONGYING , BAUM THOMAS H , KORZENSKI MICHAEL B
IPC: C23C16/16 , C23C16/18 , C23C16/34 , C23C16/44 , C23C16/448 , C23C18/00 , C23C18/12 , H01L20060101 , H01L21/288 , H01L21/312 , H01L21/316 , H01L21/768
Abstract: SUPERCRITICAL FLUID-ASSISTED DEPOSITION OF MATERIALS ON SEMICONDUCTOR SUBSTRATES Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the substrate surface. Such approach permits use of precursors that otherwise would be wholly unsuitable for deposition applications, as lacking requisite volatility and transport characteristics for vapor phase deposition processes.
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48.
公开(公告)号:BR112013003854A2
公开(公告)日:2016-06-07
申请号:BR112013003854
申请日:2011-08-19
Applicant: ADVANCED TECH MATERIALS
Inventor: GNANAMGARI DINAKAR , STRICKLER FRED , NORMAN JAMES , WARNER JOHN , INGALLS LAURA , KORZENSKI MICHAEL B , JIANG PING , MENDUM TED
Abstract: processo sustentável para reivindicação de metais preciosos e metais de base oriundo de resíduo e. processos para a reciclagem de componentes eletrônicos removidos a partir de placas de fios impressas, pelo que metais preciosos e metais de base são extraídos a partir dos componentes eletrônicos usando-se composições ambientalmente amigáveis. pelo menos íons de ouro, de prata e de cobre podem ser extraídos a partir dos componentes eletrônicos e podem ser reduzidos a seus meais respectivos usando-se o processos e as composições descritos aqui.
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公开(公告)号:AP201407373A0
公开(公告)日:2014-01-31
申请号:AP201407373
申请日:2012-06-19
Applicant: ADVANCED TECH MATERIALS
Inventor: KORZENSKI MICHAEL B , PAL RESHMA , MUOLLO LAURA R
IPC: H01M10/54 , B09B3/00 , H01M4/525 , H01M10/052
CPC classification number: H01M4/1391 , B03D1/006 , B03D1/008 , B03D1/02 , H01M4/04 , H01M4/1393 , H01M4/48 , H01M4/58 , H01M4/587 , H01M4/625 , H01M10/0525 , H01M10/54 , Y02W30/84
Abstract: A method of recovering lithium cobalt oxide from spent lithium ion batteries, wherein said method is more environmentally friendly than the methods presently known in the art. The method includes a froth flotation step using renewable and biodegradable solvents such as terpenes and formally hydrated terpenes. The method can also include a relithiation step to return the Li:Co ratio back to about 1:1 for use in second-life applications.
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公开(公告)号:SG187959A1
公开(公告)日:2013-03-28
申请号:SG2013014071
申请日:2011-08-26
Applicant: ADVANCED TECH MATERIALS
Inventor: CHEN TIANNIU , BILODEAU STEVEN , SHEU CHIMIN , NAKANISHI MUTSUMI , MATSUOKA MASAHIRO , NAKAYAMA FUMIO , ZHANG PENG , KORZENSKI MICHAEL B , COOPER EMANUEL I , VECCHARELLI KATE , PAYNE MAKONNEN
Abstract: Methods of reducing the capillary forces experienced by fragile high aspect ratio structures during drying to substantially prevent damage to said high aspect ratio structures during drying. They include modifying the surface of the high aspect ratio structures such that the forces are sufficiently minimized and as such less than 10% of the high aspect ratio features will have bent or collapsed during drying of the structure having said features thereon.
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