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公开(公告)号：US20180348647A1
公开(公告)日：2018-12-06
申请号：US15778093
申请日：2016-11-03
Applicant: ASML NETHERLANDS B.V.
Inventor： Carolus Johannes Catharina SCHOORMANS , Petrus Franciscus VAN GILS , Johannes Jacobus Matheus BASELMANS
CPC classification number: G03F7/70516 , G03F1/42 , G03F7/70725 , G03F7/70775 , G03F9/7019 , G03F9/7049 , G03F9/7088
Abstract: A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.
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公开(公告)号：US20180210350A1
公开(公告)日：2018-07-26
申请号：US15320300
申请日：2015-06-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Gerben PIETERSE , Theodorus Wilhelmus POLET , Johannes Jacobus Matheus BASELMANS , Willem Jan BOUMAN , Theodorus Marinus MODDERMAN , Cornelius Maria ROPS , Bart SMEETS , Koen STEFFENS , Ronald VAN DER HAM
IPC: G03F7/20
CPC classification number: G03F7/70891 , G03F7/70316 , G03F7/70341
Abstract: An immersion lithographic apparatus including: a liquid confinement structure configured to supply and confine immersion liquid to an immersion space between a final lens element of a projection system and a surface of the substrate and/or of a substrate table; and a passageway-former between the projection system and the liquid confinement structure, and a passageway between the passageway-former and an optically active part of the final lens element, the passageway being in liquid communication via an opening with the immersion space and extending radially outwardly, with respect to an optical axis of the projection system, at least to an edge of an exposed bottom surface of the final lens element and being constructed and configured such that in use it is filled with liquid from the immersion space by capillary action.
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公开(公告)号：US20180031982A1
公开(公告)日：2018-02-01
申请号：US15549132
申请日：2016-02-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Han-Kwang NIENHUYS , Erik Willem BOGAART , Rilpho Ludovicus Donker , Borgert KRUIZINGA , Erik Roelof LOOPSTRA , Hako BOTMA , Gosse Charles DE VRIES , Olav Waldemar Vladimir FRIJNS , Johannes Jacobus Matheus BASELMANS
Abstract: A radiation alteration device includes a continuously undulating reflective surface, wherein the shape of the continuously undulating reflective surface follows a substantially periodic pattern.
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Patent Agency Ranking
公开(公告)号：US20170261863A1
公开(公告)日：2017-09-14
申请号：US15527264
申请日：2015-11-02
Applicant: ASML NETHERLANDS B.V.
IPC: G03F7/20
CPC classification number: G03F7/70425 , G03F7/20 , G03F7/70491 , G03F7/706
Abstract: A method of correcting aberrations caused by a projection system of a lithographic apparatus, the method including performing a measurement of an aberration caused by the projection system using a sensor located in the lithographic apparatus, determining, based on a history of operation of the lithographic apparatus since a change of machine state, whether to average the measured aberration with one or more aberration measurements previously obtained using the sensor, calculating a correction to be applied to the lithographic apparatus using the measured aberration if it is determined that averaging should not be performed, calculating a correction to be applied to the lithographic apparatus using an averaged aberration measurement if it is determined that averaging should be performed, and applying the calculated correction to the lithographic apparatus.
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公开(公告)号：US20160085161A1
公开(公告)日：2016-03-24
申请号：US14956075
申请日：2015-12-01
Applicant: ASML NETHERLANDS B.V.
Inventor： Aleksey Yurievich KOLESNYCHENKO , Johannes Jacobus Matheus BASELMANS , Sjoerd Nicolaas Lambertus DONDERS , Christiaan Alexander HOOGENDAM , Hans JANSEN , Jeroen Johannes Sophia Maria MERTENS , Johannes Catharinus Hubertus MULKENS , Felix Godfried Peter PEETERS , Bob STREEFKERK , Franciscus Johannes Herman Maria TEUNISSEN , Helmar VAN SANTEN
IPC: G03F7/20
CPC classification number: G03F7/70341 , G03F7/70733 , G03F7/70866 , G03F7/70908
Abstract: A substrate table of an immersion lithographic apparatus is disclosed which comprises a barrier configured to collect liquid. The barrier surrounds the substrate and is spaced apart from the substrate. In this way any liquid which is spilt from the liquid supply system can be collected to reduce the risk of contamination of delicate components of the lithographic projection apparatus.
Abstract translation: 公开了一种浸没式光刻设备的衬底台，其包括构造成收集液体的阻挡层。 屏障围绕基板并与衬底间隔开。 以这种方式，可以收集从液体供应系统溢出的任何液体，以减少光刻投影设备的精细部件污染的风险。
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公开(公告)号：US20150346606A1
公开(公告)日：2015-12-03
申请号：US14825771
申请日：2015-08-13
Applicant: ASML Netherlands B.V.
IPC: G03F7/20
CPC classification number: G03F7/705 , G03F7/70058 , G03F7/70141 , G03F7/706 , G03F7/70891
Abstract: A method of patterning substrates using a lithographic apparatus. The method comprising providing a beam of radiation using an illumination system, using a patterning device to impart the radiation beam with a pattern in its cross-section, and using a projection system to project the patterned radiation beam onto target portions of a lot of substrates, wherein the method further comprises performing a radiation beam aberration measurement after projecting the patterned radiation beam onto a subset of the lot of substrates, performing an adjustment of the projection system using the results of the radiation beam aberration measurement, then projecting the patterned radiation beam onto a further subset of the lot of substrates.
Abstract translation: 使用光刻设备对衬底进行图案化的方法。 该方法包括使用照明系统提供辐射束，使用图案形成装置将辐射束赋予其横截面中的图案，以及使用投影系统将图案化的辐射束投影到许多基底的目标部分上 其中所述方法还包括在将所述图案化的辐射束投影到所述许多衬底的子集之后执行辐射束像差测量，使用所述辐射束像差测量的结果执行所述投影系统的调整，然后将所述图案化的辐射束 进入许多底物的另一个子集。
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公开(公告)号：US20130271636A1
公开(公告)日：2013-10-17
申请号：US13849333
申请日：2013-03-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Johannes Jacobus Matheus BASELMANS
IPC: G01J1/42
CPC classification number: G01J1/42 , G03F7/70591 , G03F7/7085 , G03F7/70941
Abstract: A method and apparatus are provided for determining apodization properties of a projection system in a lithographic apparatus. The method comprises allowing light from a given point in an illumination field to pass through the projection system along at least three different optical paths, and then determining the difference in the intensity of light received in a projection field from the two different optical paths, and calculating apodization properties of the projection system from the intensity difference. It is not necessary to know the intensity distribution in the illumination field. To provide the different optical paths a pinhole reticle provided with wedges of different orientations is used.
Abstract translation: 提供了一种用于确定光刻设备中的投影系统的变迹特性的方法和装置。 该方法包括允许来自照明场中的给定点的光沿着至少三个不同的光路穿过投影系统，然后确定在来自两个不同光路的投影场中接收的光的强度差，以及 从强度差计算投影系统的变迹特性。 不需要知道照明场中的强度分布。 为了提供不同的光路，使用具有不同取向楔形的针孔掩模版。
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公开(公告)号：US20130235361A1
公开(公告)日：2013-09-12
申请号：US13767774
申请日：2013-02-14
Applicant: ASML NETHERLANDS B.V.
IPC: G03F7/20
CPC classification number: G03F7/705 , G03F7/70058 , G03F7/70141 , G03F7/706 , G03F7/70891
Abstract: A method of patterning substrates using a lithographic apparatus. The method comprising providing a beam of radiation using an illumination system, using a patterning device to impart the radiation beam with a pattern in its cross-section, and using a projection system to project the patterned radiation beam onto target portions of a lot of substrates, wherein the method further comprises performing a radiation beam aberration measurement after projecting the patterned radiation beam onto a subset of the lot of substrates, performing an adjustment of the projection system using the results of the radiation beam aberration measurement, then projecting the patterned radiation beam onto a further subset of the lot of substrates.
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