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    DITHIENOBENZO-THIENO[3,2-B]THIOPHENE-COPOLYMER AND ITS USE AS HIGH PERFORMANCE SOLUTION PROCESSABLE SEMICONDUCTING POLYMER
    43.
    发明公开
    DITHIENOBENZO-THIENO[3,2-B]THIOPHENE-COPOLYMER AND ITS USE AS HIGH PERFORMANCE SOLUTION PROCESSABLE SEMICONDUCTING POLYMER 有权
    DITHIENOBENZO - 噻吩并[3,2-B]噻吩共聚物及其作为从溶液加工的半导体的高性能聚合物

    公开(公告)号：EP2507286A2

    公开(公告)日：2012-10-10

    申请号：EP10785057.0

    申请日：2010-11-29

    Applicant: BASF SE ,  Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.

    Inventor： KASTLER, Marcel ,  KÖHLER, Silke Annika ,  MUELLEN, Klaus ,  RIEGER, Ralph

    IPC: C08G61/12

    CPC classification number: H01L51/0043 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/3223 ,  C08G2261/3243 ,  C08G2261/414 ,  C08G2261/92 ,  H01L51/0036 ,  H01L51/0558 ,  Y02E10/549

    Abstract: Dithienobenzo-thieno[3,2-b]thiophene-copolymers of the formula (I) wherein: pi is a monocyclic or polycyclic moiety optionally substituted with 1-4 Ra groups, wherein R
    a , at each occurrence, is independently hydrogen or a) a halogen, b) -CN, c) -NO
    2 , d) oxo, e) -OH, f) =C(R
    b )
    2 ; g) a C
    1-20 alkyl group, h) a C
    2-20 alkenyl group, i) a C
    2-20 alkynyl group, j) a C
    1-20 alkoxy group, k) a C
    1-20 alkylthio group, I) a C
    1-20 haloalkyl group, m) a -Y- C
    3-10 cycloalkyl group, n) a -Y- C
    6-14 aryl group, o) a -Y-3-12 membered cycloheteroalkyl group, or p) a -Y-5-14 membered heteroaryl group, wherein each of the C
    1-20 alkyl group, the C
    2-20 alkenyl group, the C
    2-20 alkynyl group, the C
    3-10 cycloalkyl group, the C
    6-14 aryl or haloaryl group, the 3-12 membered cycloheteroalkyl group, and the 5- 14 membered heteroaryl group is optionally substituted with 1 -4 R
    b groups; Y, at each occurrence, is independently a divalent C
    1-6 alkyl group, a divalent C
    1-6 haloalkyl group, or a covalent bond; and R
    1 , R
    2 , R
    3 , at each occurrence, are independently H, a halogen, CN, a C
    1-30 alkyl group, a C
    2-30 alkenyl group, a C
    1-30 haloalkyl group, a C
    2-30 alkynyl group, a C
    1-30 alkoxy group, a C(O)-C
    1-20 alkyl group, a C(O)-OC
    1-20 alkyl group, a Y-C
    3-10 cycloalkyl group, a -Y-3- 12 membered cycloheteroalkyl group, each optionally substituted with 1-5 substituents selected from a halogen, -CN, a C
    1-6 alkyl group, a C
    1-6 alkoxy group, and a C
    1-6 haloalkyl group, -L-Ar
    1 , -L-Ar
    1 -Ar
    1 , -L-Ar
    1 -R
    4 , or -L-Ar
    1 -Ar
    1 -R
    4 and Y, at each occurrence, is independently a divalent C
    1-6 alkyl group, a divalent C
    1-6 haloalkyl group, or a covalent bond; n = 0, 1, 2; and o = 1 - 1000.

    Abstract translation: Dithienobenzo噻吩并[3,2-B]通式（I）的噻吩共聚物，其中：pi是单环或多环结构部分被1-4个R a基团任选取代，worin镭，在每次出现时独立地为氢或一个） 卤素，b） - （CN，C）-NO 2，D）氧代，E）-OH，F）= C（RB）2; 克）C1-20烷基，h）的一个C 2-20的链烯基，i）的一个C 2-20炔基，j）的一个C 1-20烷氧基，k）的C1-20的烷硫基，升）一个C1 1-20卤代烷基，m）-Y一个-C 3-10环烷基，n）的一个-Y-C 6-14芳基，O）A -Y-3-12元环杂烷基，或p）一个-Y-5- 14元杂芳基，worin每个C 1-20烷基，C 2-20的链烯基，C2-20的炔基，所述C 3-10环烷基，所述C 6-14芳基或卤代芳基，所述3-12元 环杂烷基和5-14元杂芳基任选地被1-4 R b基团substituiertem; Y，在每次出现时独立地为二价C 1-6烷基，二价C 1-6卤代烷基或共价键; 和R1，R2，R3，在每次出现时独立地为H，卤素，CN，C 1-30一烷基，C 2-30烯基，C 1-30卤代烷基，C 2-30炔基，C1 -30的烷氧基，C（O）-C1-20烷基，C（O）-OC1-20烷基，C 3-10环-Y基团，-Y-3-12元环杂烷基，每个 用选自卤素，CN，C 1-6烷基，C 1-6烷氧基，和C 1-6卤代烷基中选择的取代基1-5 OPTIONALLY substituiertem，-L-的Ar 1，L-1的Ar 1 -Ar - L-AR1-R4，或-L-AR1-AR1-R4和Y，在每次出现时独立地为二价C 1-6烷基，二价C 1-6卤代烷基或共价键; N = 0，1，2; 和o = 1-1000。

    VERFAHREN ZUR HERSTELLUNG VON HALBLEITENDEN SCHICHTEN
    44.
    发明公开
    VERFAHREN ZUR HERSTELLUNG VON HALBLEITENDEN SCHICHTEN 审中-公开
    用于生产半导体层

    公开(公告)号：EP2425038A2

    公开(公告)日：2012-03-07

    申请号：EP10715825.5

    申请日：2010-04-26

    Applicant: BASF SE

    Inventor： KARPOV, Andrey ,  FLEISCHHAKER, Friederike ,  DOMKE, Imme ,  KASTLER, Marcel ,  WLOKA, Veronika ,  WEBER, Lothar

    IPC: C23C18/12 ,  H01L21/288

    CPC classification number: C23C18/1216 ,  C23C18/1245 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02628 ,  H01L27/1292 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

    Abstract: The present invention relates to a method for producing a layer containing at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) producing a solution containing at least one precursor compound of the at least one metal oxide selected from the group of carboxylates from monocarboxylic, dicarbonic, or polycarboxylic acids with at least three carbon atoms or derivatives of monocarboxylic, dicarbonic, or polycarboxylic acids, alcoholates, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidins, amidrazones, carbamide derivatives, hydroxylamines, oximes, urethanes, ammonia, amines, phosphines, ammonium compounds, azides of the corresponding metal and compounds thereof, in at least one solvent; (B) application of the solvent of step (A) on the substrate; and (C) thermal treatment of the substrate of step (B) at a temperature of 20 to 200 degrees Celsius, in order to transfer the at least one precursor compound in at least one semiconductive metal oxide. In the event that in step (A), electrically neutral [(OH)
    x (NH
    3 )
    y Zn]
    z with x, y, and z independently from one another 0.01 to 10, is used as precursor compound, said precursor compound is obtained by conversion of zinc oxide or zinc hydroxide with ammonia; a substrate, which is coated with at least one semiconductive metal oxide, obtainable by said method; the application of said substrate in electronic components; and a method for producing electronically neutral [(OH)
    x (NH
    3 )
    y Zn]
    z with x, y, and z independently from one another 0.01 to 10, by conversion of zinc oxide and/or zinc hydroxide with ammonia.

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