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公开(公告)号：DE3752249D1
公开(公告)日：1999-03-04
申请号：DE3752249
申请日：1987-07-03
Applicant: CANON KK
Inventor： TSUKAMOTO TAKEO , SHIMIZU AKIRA , SUZUKI AKIRA , SUGATA MASAO C O CANON KABUSHI , SHIMODA ISAMU , OKUNUKI MASAHIKO
Abstract: An electron emitting device for causing electron emission from a high resistance film by a current supply therein, wherein said high resistance film is composed of an agglomerate of fine metal particles having small gaps therebetween, characterized in that the size of said particles and the size of the gaps therebetween are relatively uniform.
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公开(公告)号：DE68927430D1
公开(公告)日：1996-12-12
申请号：DE68927430
申请日：1989-08-31
Applicant: CANON KK
Inventor： KUROSAWA HIROSHI , AMEMIYA MITSUAKI , TERASHIMA SHIGERU , UDA KOJI , SHIMODA ISAMU , UZAWA SHUNICHI
IPC: G03F7/20
Abstract: An exposure apparatus usable with synchrotron radiation source (201) wherein the synchrotron radiation (202,204) is generated by electron injection (210) into a ring (201). The exposure apparatus is to transfer a semiconductor element pattern of a mask (208) onto a semiconductor wafer (209) by the synchrotron radiation. The apparatus includes a shutter (207) for controlling the exposure of the wafer (209). The shutter (207) controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined (206,211,216) in response to the electron injection (210), and thereafter, the illuminance distribution is corrected (216,215,213,207) in a predetermined manner. By this, the illuminance distribution data for controlling (213,215) the shutter (207) always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer (209) are exposed with high precision.
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公开(公告)号：DE3751737T2
公开(公告)日：1996-09-19
申请号：DE3751737
申请日：1987-10-01
Applicant: CANON KK
Inventor： SUGATA MASAO , TSUKAMOTO TAKEO , SHIMIZU AKIRA , SUZUKI AKIRA , SHIMODA ISAMU , OKUNUKI MASAHIKO
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公开(公告)号：DE3751737D1
公开(公告)日：1996-04-18
申请号：DE3751737
申请日：1987-10-01
Applicant: CANON KK
Inventor： SUGATA MASAO , TSUKAMOTO TAKEO , SHIMIZU AKIRA , SUZUKI AKIRA , SHIMODA ISAMU , OKUNUKI MASAHIKO
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公开(公告)号：DE3750936D1
公开(公告)日：1995-02-16
申请号：DE3750936
申请日：1987-07-03
Applicant: CANON KK
Inventor： TSUKAMOTO TAKEO , SHIMIZU AKIRA , SUZUKI AKIRA , SUGATA MASAO , SHIMODA ISAMU , OKUNUKI MASAHIKO
Abstract: An electron emitting device for causing electron emission from a high resistance film by a current supply therein, wherein said high resistance film is composed of an agglomerate of fine metal particles having small gaps therebetween, characterized in that the size of said particles and the size of the gaps therebetween are relatively uniform.
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Patent Agency Ranking
公开(公告)号：DE3851080T2
公开(公告)日：1994-12-22
申请号：DE3851080
申请日：1988-04-13
Applicant: CANON KK
Inventor： SHIMIZU AKIRA , TSUKAMOTO TAKEO , SUZUKI AKIRA , SUGATA MASAO , SHIMODA ISAMU , OKUNUKI MASAHIKO
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公开(公告)号：DE68919179D1
公开(公告)日：1994-12-08
申请号：DE68919179
申请日：1989-08-31
Applicant: CANON KK
Inventor： ABE NAOTO , UDA KOJI , SHIMODA ISAMU , UZAWA SHUNICHI , NOSE NORIYUKI
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公开(公告)号：DE3788318T2
公开(公告)日：1994-06-16
申请号：DE3788318
申请日：1987-06-23
Applicant: CANON KK
Inventor： KAN FUMITAKA , NAKAMURA KENJI , TAKENOUCHI MASANORI , HAYAKAWA NAOJI , SHIMODA ISAMU , OKUNUKI MASAHIKO
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公开(公告)号：DE3784560T2
公开(公告)日：1993-07-01
申请号：DE3784560
申请日：1987-06-16
Applicant: CANON KK
Inventor： OKUNUKI MASAHIKO , TSUKAMOTO TAKEO , SHIMIZU AKIRA , SUZUKI AKIRA , SUGATA MASAO , SHIMODA ISAMU
IPC: H01J37/073 , H01J1/316 , H01J3/02 , H01J37/06 , H01L21/027 , H01J1/30 , H01J37/317
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公开(公告)号：DE68929356T2
公开(公告)日：2002-05-23
申请号：DE68929356
申请日：1989-06-05
Applicant: CANON KK
Inventor： TERASHIMA SHIGERU , AMEMIYA MITSUAKI , SHIMODA ISAMU , UZAWA SHUNICHI , KARIYA TAKAO
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