Abstract:
An imprint apparatus forms a pattern on a substrate (101) by curing an imprint material on the substrate while the imprint material is in contact with a mold. The imprint apparatus includes a substrate chuck (102) having a substrate holding region for holding the substrate, a peripheral member (113) arranged to 5 surround the side surface of the substrate held by the substrate chuck, and a control unit configured to control a cleaning process for cleaning at least a partial region of the peripheral member by using a cleaning member (170) including a charging unit. The cleaning process includes an operation for attracting a particle in the partial region to the charging unit by moving the cleaning member 10 relative to the peripheral member while the charging unit faces at least the partial region of the peripheral member.
Abstract:
An electron beam exposure apparatus for projecting an image formed by electron beams onto a wafer (114) via a reduction electron optical system (108), irradiates collimated electron beams toward an aperture board (104) having an arcuated aperture (201) sandwiched between two arcs having, as the center, the axis of the reduction electron optical system (108), and exposes the wafer (114) with electron beams having an arcuated sectional shape that have been transmitted through the aperture (201).
Abstract:
An exposure apparatus usable with synchrotron radiation source (201) wherein the synchrotron radiation (202,204) is generated by electron injection (210) into a ring (201). The exposure apparatus is to transfer a semiconductor element pattern of a mask (208) onto a semiconductor wafer (209) by the synchrotron radiation. The apparatus includes a shutter (207) for controlling the exposure of the wafer (209). The shutter (207) controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined (206,211,216) in response to the electron injection (210), and thereafter, the illuminance distribution is corrected (216,215,213,207) in a predetermined manner. By this, the illuminance distribution data for controlling (213,215) the shutter (207) always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer (209) are exposed with high precision.
Abstract:
An exposure apparatus usable with synchrotron radiation source (201) wherein the synchrotron radiation (202,204) is generated by electron injection (210) into a ring (201). The exposure apparatus is to transfer a semiconductor element pattern of a mask (208) onto a semiconductor wafer (209) by the synchrotron radiation. The apparatus includes a shutter (207) for controlling the exposure of the wafer (209). The shutter (207) controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined (206,211,216) in response to the electron injection (210), and thereafter, the illuminance distribution is corrected (216,215,213,207) in a predetermined manner. By this, the illuminance distribution data for controlling (213,215) the shutter (207) always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer (209) are exposed with high precision.
Abstract:
An electron beam exposure apparatus for projecting an image formed by electron beams onto a wafer (114) via a reduction electron optical system (108), irradiates collimated electron beams toward an aperture board (104) having an arcuated aperture (201) sandwiched between two arcs having, as the center, the axis of the reduction electron optical system (108), and exposes the wafer (114) with electron beams having an arcuated sectional shape that have been transmitted through the aperture (201).