2.
    发明专利
    未知

    公开(公告)号:DE69727112T2

    公开(公告)日:2004-07-08

    申请号:DE69727112

    申请日:1997-10-23

    Applicant: CANON KK

    Abstract: An electron beam exposure apparatus for projecting an image formed by electron beams onto a wafer (114) via a reduction electron optical system (108), irradiates collimated electron beams toward an aperture board (104) having an arcuated aperture (201) sandwiched between two arcs having, as the center, the axis of the reduction electron optical system (108), and exposes the wafer (114) with electron beams having an arcuated sectional shape that have been transmitted through the aperture (201).

    3.
    发明专利
    未知

    公开(公告)号:DE68929187T2

    公开(公告)日:2000-09-28

    申请号:DE68929187

    申请日:1989-08-31

    Applicant: CANON KK

    Abstract: An exposure apparatus usable with synchrotron radiation source (201) wherein the synchrotron radiation (202,204) is generated by electron injection (210) into a ring (201). The exposure apparatus is to transfer a semiconductor element pattern of a mask (208) onto a semiconductor wafer (209) by the synchrotron radiation. The apparatus includes a shutter (207) for controlling the exposure of the wafer (209). The shutter (207) controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined (206,211,216) in response to the electron injection (210), and thereafter, the illuminance distribution is corrected (216,215,213,207) in a predetermined manner. By this, the illuminance distribution data for controlling (213,215) the shutter (207) always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer (209) are exposed with high precision.

    4.
    发明专利
    未知

    公开(公告)号:DE68927430T2

    公开(公告)日:1997-03-13

    申请号:DE68927430

    申请日:1989-08-31

    Applicant: CANON KK

    Abstract: An exposure apparatus usable with synchrotron radiation source (201) wherein the synchrotron radiation (202,204) is generated by electron injection (210) into a ring (201). The exposure apparatus is to transfer a semiconductor element pattern of a mask (208) onto a semiconductor wafer (209) by the synchrotron radiation. The apparatus includes a shutter (207) for controlling the exposure of the wafer (209). The shutter (207) controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined (206,211,216) in response to the electron injection (210), and thereafter, the illuminance distribution is corrected (216,215,213,207) in a predetermined manner. By this, the illuminance distribution data for controlling (213,215) the shutter (207) always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer (209) are exposed with high precision.

    6.
    发明专利
    未知

    公开(公告)号:DE69727112D1

    公开(公告)日:2004-02-12

    申请号:DE69727112

    申请日:1997-10-23

    Applicant: CANON KK

    Abstract: An electron beam exposure apparatus for projecting an image formed by electron beams onto a wafer (114) via a reduction electron optical system (108), irradiates collimated electron beams toward an aperture board (104) having an arcuated aperture (201) sandwiched between two arcs having, as the center, the axis of the reduction electron optical system (108), and exposes the wafer (114) with electron beams having an arcuated sectional shape that have been transmitted through the aperture (201).

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