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公开(公告)号：JP2012027508A
公开(公告)日：2012-02-09
申请号：JP2011245183
申请日：2011-11-09
Inventor： MITSUI MASARU , SUGIHARA OSAMU , USHIDA MASAO
IPC: G03F1/58
Abstract: PROBLEM TO BE SOLVED: To provide a mask blank and a photomask reducing obstacles to higher quality of a large-sized mask blank and mask for future FPD.SOLUTION: A mask blank 10 for producing an FPD device comprises a glass substrate 12, a light-transmissive film 14 having light transmissivity through a light in a wavelength region over i line to g line, and a metal silicide-based film, where the metal silicide-based film is a film patterned by wet-etching using an etching liquid as an aqueous solution in which one or more fluorine compounds selected from ammonium hydrogen fluoride, ammonium fluoride and fluoroboronic acid is mixed with an oxidant and where the light-transmissive film 14 is a film formed of a material having etching selectivity for an etching liquid used in wet-etching of a metal silicide-based film.
Abstract translation: 要解决的问题：提供掩模空白和光掩模，以减少用于未来FPD的大尺寸掩模坯料和掩模的更高质量的障碍。 解决方案：用于制造FPD器件的掩模基板10包括玻璃基板12，通过i线至g线上的波长区域中的光具有透光性的透光膜14和金属硅化物基膜 其中金属硅化物基膜是通过使用蚀刻液体的湿蚀刻图案化的膜作为其中一种或多种选自氟化氢，氟化铵和氟硼酸的氟化合物与氧化剂混合的水溶液，并且其中 透光膜14是由用于金属硅化物类膜的湿蚀刻中的蚀刻液的蚀刻选择性的材料形成的膜。 版权所有（C）2012，JPO＆INPIT
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公开(公告)号：JP2010020335A
公开(公告)日：2010-01-28
申请号：JP2009205755
申请日：2009-09-07
Inventor： MITSUI MASARU
IPC: A61N5/00 , C23C14/00 , C23C14/06 , C23C14/32 , C23C14/34 , G03F1/24 , G03F1/32 , G03F1/68 , G03F9/00 , G21G5/00 , H01L21/027
CPC classification number: C23C14/0641 , C23C14/0676 , C23C14/3414 , G03F1/26 , G03F1/32 , G03F1/68
Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a mask blank capable of manufacturing a high-quality mask blank with a high yield, while suppressing generation of defects in a thin film for forming a mask pattern, to provide a method for manufacturing a transfer mask manufactured by patterning the thin film of the mask blank, and to provide a sputtering target that is used for manufacturing the mask blank.
SOLUTION: By using a sputtering target 14, containing silicon and having a hardness of 900 HV or more in Vickers' hardness, a thin film for forming the mask pattern on a substrate 1 is formed by sputtering, and the high-quality mask blank that suppresses generating of defects is manufactured; and further, the transfer mask is manufactured by patterning the thin film.
COPYRIGHT: (C)2010,JPO&INPITAbstract translation: 解决的问题：提供一种制造能够以高产率制造高质量掩模坯料的掩模坯料的方法，同时抑制用于形成掩模图案的薄膜中的缺陷的产生，以提供一种方法 用于制造通过对掩模板的薄膜进行图案化而制造的转印掩模，并且提供用于制造掩模板的溅射靶。 解决方案：通过使用含有硅并具有维氏硬度为900HV或更高的硬度的溅射靶14，通过溅射形成用于在基板1上形成掩模图案的薄膜，并且高品质 制造抑制缺陷产生的掩模板; 此外，通过对薄膜进行图案化来制造转印掩模。 版权所有（C）2010，JPO＆INPIT
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公开(公告)号：JP2008249949A
公开(公告)日：2008-10-16
申请号：JP2007090630
申请日：2007-03-30
Applicant: Hoya Corp , Hoya Electronics Malaysia Sdn Bhd , Hoya株式会社 , ホーヤ エレクトロニクス マレーシア センドリアン ベルハッドHoya Electronics Malaysia Sendirian Berhad
Inventor： MITSUI MASARU , USHIDA MASAO
IPC: G02F1/1335 , G02F1/1368 , G03F1/00 , G03F1/50 , G03F1/54 , G03F1/68 , G03F1/80 , G09F9/30 , H01L21/027 , H01L27/32
Abstract: PROBLEM TO BE SOLVED: To provide a mask blank for use in manufacturing of an FPD device provided with a light-semitransmissive film of which a change in transmittance is small as wavelength changes in a wavelength band from i-rays to g-rays. SOLUTION: The photomask blank for use in manufacturing of an FPD device includes a light-transmissive substrate 16, a light-semitransmissive film 17 which is formed on the substrate 16 and is made of a material containing chromium, and a light-shielding film 18 which is formed on the film 17 and is made of a material containing tantalum. COPYRIGHT: (C)2009,JPO&INPIT
Abstract translation: 解决的问题：提供一种用于制造FPD器件的掩模板，该FPD器件具有随着波长从i射线向g-1波长变化的透射率的变化小的光半透射膜， 射线。 解决方案：用于制造FPD器件的光掩模坯料包括透光基板16，形成在基板16上并由含铬材料制成的光半透射膜17， 屏蔽膜18，其形成在膜17上并且由含有钽的材料制成。 版权所有（C）2009，JPO＆INPIT
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公开(公告)号：JP2007271774A
公开(公告)日：2007-10-18
申请号：JP2006095312
申请日：2006-03-30
Applicant: Hoya Corp , Hoya Electronics Malaysia Sdn Bhd , Hoya株式会社 , ホーヤ エレクトロニクス マレーシア センドリアン ベルハッドHoya Electronics Malaysia Sendirian Berhad
Inventor： MITSUI MASARU , ASAKAWA TAKASHI
Abstract: PROBLEM TO BE SOLVED: To provide a mask blank suitable to a photomask for FPD, and the photomask. SOLUTION: The mask blank 10 is for manufacturing an FPD device, and has a substrate 12, a light shield film 14 formed on the substrate 12 by using metal silicide as a material, and an upper-layer film 16 formed on the light shield film 14 by using oxidized or oxynitrided metal silicide as a material. The light shield film 14 and upper-layer film 16 are films to be wet-etched by using an etching mask obtained by patterning a resist film 18 formed on the upper-layer film 16, and the resist film 18 is formed by discharging resist liquid onto the upper-layer film 16 from a nozzle having a resist liquid supply hole extending in one direction and also simultaneously moving the nozzle in a direction crossing the one direction relatively to the upper-layer film surface, the upper-layer film 16 being 50 to 300Å thick. COPYRIGHT: (C)2008,JPO&INPIT
Abstract translation: 要解决的问题：提供适用于FPD的光掩模的掩模空白和光掩模。 解决方案：掩模坯料10用于制造FPD器件，并且具有基板12，通过使用金属硅化物作为材料形成在基板12上的遮光膜14和形成在基板12上的上层膜16 通过使用氧化或氧氮化金属硅化物作为材料的遮光膜14。 遮光膜14和上层膜16是通过使用通过对形成在上层膜16上形成的抗蚀剂膜18进行图案化而获得的蚀刻掩模进行湿蚀刻的膜，并且通过将抗蚀剂液体 从具有沿一个方向延伸的抗蚀剂液体供给孔的喷嘴到上层膜16上，并且同时沿相对于上层膜表面的与该一个方向交叉的方向移动喷嘴，上层膜16为50 到300Å厚。 版权所有（C）2008，JPO＆INPIT
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公开(公告)号：JP2007094435A
公开(公告)日：2007-04-12
申请号：JP2006345912
申请日：2006-12-22
Inventor： MITSUI MASARU , SUZUKI TOSHIYUKI , ISHIHARA SHIGENORI
Abstract: PROBLEM TO BE SOLVED: To provide a method or the like for manufacturing a photomask blank capable of efficiently reducing film stress. SOLUTION: The method for manufacturing the photomask blank having at least a film for forming a mask pattern on a transparent substrate comprises a film forming process for sputter-forming the film for forming the mask pattern by containing at least helium gas in sputtering atmosphere and a process for heating the transparent substrate during or after the film forming process. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 要解决的问题：提供一种用于制造能够有效降低膜应力的光掩模坯料的方法等。 解决方案：用于制造具有至少一个用于在透明基板上形成掩模图案的膜的光掩模坯料的方法包括用于通过在溅射中容纳至少氦气来形成掩模图案的膜来溅射成膜的成膜方法 气氛和在成膜过程中或之后加热透明基材的方法。 版权所有（C）2007，JPO＆INPIT
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Patent Agency Ranking46.发明专利
公开(公告)号：JP2006184353A
公开(公告)日：2006-07-13
申请号：JP2004375301
申请日：2004-12-27
Inventor： MITSUI MASARU
IPC: G03F1/32 , G03F1/54 , G03F1/68 , G03F7/20 , H01L21/027
CPC classification number: G03F1/32
Abstract: PROBLEM TO BE SOLVED: To provide a halftone phase shift mask blank and a halftone phase shift mask having proper chemical resistance and light resistance and ensuring accurate pattern drawing without a charge-up phenomenon on patterning a resist film by electron beam lithography.
SOLUTION: The halftone phase shift mask blank 10B has a phase shift film 2, containing metal and silicon and having a phase shift function, a light-shielding film 3 and a resist film 4 formed, in this order on a transparent substrate 1. The phase shift film 2 comprises a film, having a ratio of atomic percentages of the metal to silicon larger than metal:silicon=1:2 and is a dense film with ≤2 nm for root-mean-square (RMS) roughness. An exposed portion 5, where the phase shift film 2 is absent, is formed in the peripheral edge on the transparent substrate 1. The light-shielding film 3 is made of a material, having conductivity of such a degree that charge-up phenomenon is not induced when patterning the resist film 4 by electron beam drawing, and the film is formed to cover the exposed portion 5 and the phase shift film 2.
COPYRIGHT: (C)2006,JPO&NCIPIAbstract translation: 要解决的问题：提供具有适当的耐化学性和耐光性的半色调相移掩模毛坯和半色调相移掩模，并且通过电子束光刻在图案化抗蚀剂膜上确保精确的图案绘制而没有电荷现象。 ＆lt; P＆gt;解决方案：半色调相移掩模空白10B具有相对移动膜2，该相移膜2依次形成有含有相移功能的金属和硅并且形成有遮光膜3和抗蚀剂膜4的透明基板 相移膜2包括具有比金属大的金属与硅的原子百分比的比例=硅= 1:2的膜，并且是均方根（RMS）粗糙度≤2nm的致密膜 。 在透明基板1的周缘部形成有不具有相移膜2的露出部分5.遮光膜3由具有如下特性的材料制成，该导电率为充电现象为 在通过电子束拉制对抗蚀剂膜4进行图案化时不诱导，并且形成膜以覆盖曝光部分5和相移膜2.版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2003315980A
公开(公告)日：2003-11-06
申请号：JP2002118944
申请日：2002-04-22
Inventor： MITSUI MASARU , SUZUKI TOSHIYUKI , ISHIHARA SHIGENORI
IPC: C23C14/18 , C23C14/34 , C23C14/54 , C23C14/58 , G03F1/32 , G03F1/54 , G03F1/68 , H01L21/027 , G03F1/08
CPC classification number: C23C14/5806 , C23C14/185 , C23C14/541 , G03F1/32 , G03F1/68
Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a photomask blank capable of efficiently relieving film stress. SOLUTION: The method for producing a photomask blank having at least a film for forming a mask pattern on a transparent substrate has a film deposition step in which the film for forming a mask pattern is deposited by sputtering in a sputtering atmosphere in which at least gaseous helium is contained and a step for heating the transparent substrate during or after the film deposition step. COPYRIGHT: (C)2004,JPO
Abstract translation: 要解决的问题：提供一种能够有效地缓解薄膜应力的光掩模坯料的制造方法。 解决方案：用于制造具有至少一个用于在透明基板上形成掩模图案的膜的光掩模坯料的方法具有成膜步骤，其中用于形成掩模图案的膜通过溅射在溅射气氛中沉积，其中溅射气氛 至少含有气态氦气和在薄膜沉积步骤期间或之后加热透明基材的步骤。 版权所有（C）2004，JPO
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48.发明专利
公开(公告)号：JP2003231965A
公开(公告)日：2003-08-19
申请号：JP2003039014
申请日：2003-02-17
Applicant: HOYA CORP
Inventor： NOZAWA JUN , MITSUI MASARU , OTSUKA HITOSHI , MITSUI HIDEAKI
Abstract: PROBLEM TO BE SOLVED: To provide a device, process, etc., for manufacturing a phase shift mask blank wherein the total number of particles and pinholes with diameters larger than about half the exposure wavelength of a translucent film is 0.1/cm 2 . SOLUTION: In a DC magnetron sputtering device for manufacturing a halftone phase shift mask blank, for example, the target surface is placed facing down against the direction of gravity, a full erosion cathode is used, the corner 5a of the end of the target and the corner of an earth shield are rounded off (corner rounding), the end of the target 5b, an exposed backing plate surface 4b and the surface of the earth shield 12 are roughened, and the earth shield 12 is placed above (on the backing plate side) the target surface d. COPYRIGHT: (C)2003,JPO
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公开(公告)号：JP2002162726A
公开(公告)日：2002-06-07
申请号：JP2001243317
申请日：2001-08-10
Applicant: HOYA CORP
Inventor： NOZAWA JUN , MITSUI MASARU , MITSUI HIDEAKI
Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a phase shift mask blank having a semi-transparent film or a portion which has a prescribed phase angle and prescribed transmission, and superior film characteristics such as resistance to chemicals, resistance to light, and low in internal stress. SOLUTION: The method is to manufacture the phase shift mask blank of halftone type with the semi-transparent film formed on a transparent substrate. The semi-transparent film is made of a thin film mainly composed of nitrogen, metal and silicon, and formed on the transparent substrate. Then, the thermal process for the semi-transparent film is carried out at a temp. of not lower than 150 deg.C.
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公开(公告)号：JPH11316453A
公开(公告)日：1999-11-16
申请号：JP6092499
申请日：1999-03-08
Applicant: HOYA CORP
Inventor： MITSUI MASARU , OKADA KIMIHIRO , SUDA HIDEKI
IPC: H01L21/027 , G03F1/32 , G03F1/68 , G03F1/08
Abstract: PROBLEM TO BE SOLVED: To provide a producing method of a halftone phase shift mask, having a semitransparent part for light excellent in film characteristics such as acid resistance, light resistance, conductivity, refractive index (film thickness), transmittance, phase shift amount and etching selectivity. SOLUTION: The producing method of a phase shift mask includes a process for forming a semitransmitting thin film 3a for light as a thin film, which constitutes a semitransparent part on a transparent substrate 1 and a process for forming a resist pattern on the semitransparent thin film 3a. The semitransparent thin film 3a consists of a material essentially comprising nitrogen, metal and silicon as the main structural elements and contains 34 to 60 at.% silicon. The resist pattern formed on the thin film 3a is used as a mask for etching the semitransparent thin film 3a to obtain the desired pattern of the thin film, and then the thin film is subjected to sulfuric acid cleaning.
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