公开(公告)号：DE102004040523B4

公开(公告)日：2008-10-02

申请号：DE102004040523

申请日：2004-08-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FALCK ELMAR ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  SCHULZE HANS-JOACHIM ,  BARTHELMESS REINER

IPC: H01L29/06 ,  H01L21/328 ,  H01L29/739 ,  H01L29/74 ,  H01L29/78 ,  H01L29/861

公开(公告)号：DE102005031398A1

公开(公告)日：2007-01-11

申请号：DE102005031398

申请日：2005-07-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  BARTHELMESS REINER

IPC: H01L29/06 ,  H01L29/861

公开(公告)号：DE102004042163B4

公开(公告)日：2006-06-08

申请号：DE102004042163

申请日：2004-08-31

Applicant: EUPEC GMBH & CO KG ,  INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  BARTHELMESS REINER

IPC: H01L29/74

Abstract: The thyristor has a semiconductor body (1) in which a p-doped emitter, n-doped base and n-doped main emitter are arranged. A sectional plane runs via n-doped short circuit zones. The ratio between the sum of cross sectional surfaces of one of the zones in an inner area and a cross sectional surface of the inner area is greater than that between the sum of surfaces of another zones in the outer area to a surface of the outer area. - An INDEPENDENT CLAIM is also included for a circuit arrangement with a thyristor.

公开(公告)号：DE102004040523A1

公开(公告)日：2006-02-23

申请号：DE102004040523

申请日：2004-08-20

Applicant: EUPEC GMBH & CO KG ,  INFINEON TECHNOLOGIES AG

Inventor： FALCK ELMAR ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  SCHULZE HANS-JOACHIM ,  BARTHELMESS REINER

IPC: H01L29/06 ,  H01L29/739 ,  H01L29/74 ,  H01L29/78 ,  H01L29/861

公开(公告)号：DE50107925D1

公开(公告)日：2005-12-08

申请号：DE50107925

申请日：2001-08-24

Applicant: EUPEC GMBH & CO KG ,  INFINEON TECHNOLOGIES AG

Inventor： BARTHELMESS REINER ,  PFIRSCH FRANK ,  MAUDER ANTON ,  SCHMIDT GERHARD

IPC: H01L21/322 ,  H01L21/329 ,  H01L29/06 ,  H01L29/40 ,  H01L29/861 ,  H01L21/304

公开(公告)号：DE10250608B4

公开(公告)日：2005-09-29

申请号：DE10250608

申请日：2002-10-30

Applicant: EUPEC GMBH & CO KG ,  INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  KELLNER-WERDEHAUSEN UWE ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  BARTHELMESS REINER

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/74

Abstract: A thyristor comprises a semiconductor body with a front and back face, an edge, a first semiconductor zone, embodied in the region of the rear face and a second semiconductor zone, adjacent to the first semiconductor zone, whereby the edge has a bevelled embodiment in the region of the transition between the first and second semiconductor zones, at least one third semiconductor zone, arranged in the region of the front face of the semiconductor body and at least one fourth semiconductor zone, arranged between the at least one third semiconductor zone and the second semiconductor zone. The fourth semiconductor zone terminates before the edge in the lateral direction of the semiconductor body, in order to reduce the amplification of a parasitic bipolar transistor formed in the region of the edge by the fourth semiconductor zone, the second semiconductor zone and the first semiconductor zone.

公开(公告)号：AT263433T

公开(公告)日：2004-04-15

申请号：AT99944236

申请日：1999-07-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PORST ALFRED ,  STRACK HELMUT ,  MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  BRUNNER HEINRICH ,  BAUER JOSEF ,  BARTHELMESS REINER

IPC: H01L29/744 ,  H01L29/10 ,  H01L29/12 ,  H01L29/36 ,  H01L29/739 ,  H01L29/745 ,  H01L29/749 ,  H01L29/78 ,  H01L29/861

Abstract: A power semiconductor components has stop zones. In order to optimize the static and dynamic losses of the power semiconductor components, the stop zone is provided with donors which have at least one donor level which lies within the band gap of silicon and is at least 200 meV away from the conduction band edge of silicon.