公开(公告)号：DE59909045D1

公开(公告)日：2004-05-06

申请号：DE59909045

申请日：1999-07-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PORST ALFRED ,  STRACK HELMUT ,  MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  BRUNNER HEINRICH ,  BAUER JOSEF ,  BARTHELMESS REINER

IPC: H01L29/744 ,  H01L29/10 ,  H01L29/12 ,  H01L29/36 ,  H01L29/739 ,  H01L29/745 ,  H01L29/749 ,  H01L29/78 ,  H01L29/861

Abstract: A power semiconductor components has stop zones. In order to optimize the static and dynamic losses of the power semiconductor components, the stop zone is provided with donors which have at least one donor level which lies within the band gap of silicon and is at least 200 meV away from the conduction band edge of silicon.

公开(公告)号：AT263433T

公开(公告)日：2004-04-15

申请号：AT99944236

申请日：1999-07-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PORST ALFRED ,  STRACK HELMUT ,  MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  BRUNNER HEINRICH ,  BAUER JOSEF ,  BARTHELMESS REINER

IPC: H01L29/744 ,  H01L29/10 ,  H01L29/12 ,  H01L29/36 ,  H01L29/739 ,  H01L29/745 ,  H01L29/749 ,  H01L29/78 ,  H01L29/861

Abstract: A power semiconductor components has stop zones. In order to optimize the static and dynamic losses of the power semiconductor components, the stop zone is provided with donors which have at least one donor level which lies within the band gap of silicon and is at least 200 meV away from the conduction band edge of silicon.

公开(公告)号：DE10048859B4

公开(公告)日：2005-12-15

申请号：DE10048859

申请日：2000-10-02

Applicant: INFINEON TECHNOLOGIES AG ,  EUPEC GMBH & CO KG

Inventor： SCHILLING OLIVER ,  SEIDELMANN HELMUT ,  SCHOLZ DETLEF ,  BAUER JOSEF ,  PORST ALFRED ,  BEUERMANN MAX ,  BARTHELMESS REINER

IPC: H01L23/051 ,  H01L23/48

Abstract: The pressure contact units (11, 12) are designed to produce an essentially symmetrical, uniform and/or homogeneous pressure distribution in the electronic component (20). This is especially so, in the regions (21a, 22a) between the contact surfaces (21, 22).

公开(公告)号：DE10053445C2

公开(公告)日：2002-11-28

申请号：DE10053445

申请日：2000-10-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  HUESKEN HOLGER ,  LASKA THOMAS ,  PORST ALFRED ,  SCHAEFFER CARSTEN ,  SCHMIDT THOMAS ,  PFIRSCH FRANK

IPC: H01L29/10 ,  H01L29/739

公开(公告)号：DE10031461B4

公开(公告)日：2006-06-29

申请号：DE10031461

申请日：2000-06-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  PORST ALFRED

IPC: H01L29/861 ,  H01L29/32

Abstract: A high-voltage diode has a dopant concentration of an anode region and a cathode region optimized in terms of basic functions static blocking and conductivity. Dopant concentrations range from 1x10 17 to 3x10 18 dopant atoms per cm 3 for the anode emitter, especially on its surface 10 19 dopant atoms per cm 3 or more for the cathode emitter and approximately 10 16 dopant atoms per cm 3 for the blocking function of an anode-side zone.

公开(公告)号：DE10053445A1

公开(公告)日：2002-05-23

申请号：DE10053445

申请日：2000-10-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  HUESKEN HOLGER ,  LASKA THOMAS ,  PORST ALFRED ,  SCHAEFFER CARSTEN ,  SCHMIDT THOMAS ,  PFIRSCH FRANK

IPC: H01L29/10 ,  H01L29/739

Abstract: IGBT comprises a semiconductor substrate forming a weakly doped drift zone (3) of first conductivity type; a zone (2) of second conductivity embedded in the first surface of the drift zone; a cell region made from highly doped emitter connection (9) and a gate electrode (8); a first metallization contacting the zone (2) and the emitter connection. A region (4, 5) of first conductivity type and a second metallization (7) are arranged opposite the region of first conductivity type on a surface of a collector region (6). The region of first conductivity type consists of two independently doped regions originating from the second metallization consisting of a highly doped flat region (5) and a low doped diffused or epitaxially produced region (4) Preferred Features: The flat region and the collector region are doped in such a way that the low doped region is flooded with charge carriers. The gate electrode is made from polycrystalline silicon.

公开(公告)号：DE10031461A1

公开(公告)日：2002-01-17

申请号：DE10031461

申请日：2000-06-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  PORST ALFRED

IPC: H01L29/32 ,  H01L29/861

Abstract: The invention relates to a high-voltage diode, wherein the dopant concentration of an anode region (4, 2) and a cathode region (1, 5, 6) is optimized in terms of the basic functions static blocking and conductivity . The dopant concentrations range from 1 x 1017 to 3 x 1018 dopant atoms per cm-3 for the anode emitter (4), especially on its surface 1019 dopant atoms per cm-3 or more for the cathode emitter (6) and approximately 1016 dopant atoms per cm-3 for the blocking function of an anode-side zone (2).

公开(公告)号：DE10048859A1

公开(公告)日：2002-04-18

申请号：DE10048859

申请日：2000-10-02

Applicant: INFINEON TECHNOLOGIES AG ,  EUPEC GMBH & CO KG

Inventor： SCHILLING OLIVER ,  SEIDELMANN HELMUT ,  SCHOLZ DETLEF ,  BAUER JOSEF ,  PORST ALFRED ,  BEUERMANN MAX ,  BARTHELMESS REINER

IPC: H01L23/051 ,  H01L23/48

Abstract: The pressure contact units (11, 12) are designed to produce an essentially symmetrical, uniform and/or homogeneous pressure distribution in the electronic component (20). This is especially so, in the regions (21a, 22a) between the contact surfaces (21, 22).