公开(公告)号：US10672859B2

公开(公告)日：2020-06-02

申请号：US16020590

申请日：2018-06-27

Applicant: Intel Corporation

Inventor： Andrew J. Brown ,  Rahul Jain ,  Sheng Li ,  Sai Vadlamani ,  Chong Zhang

IPC: H01L23/522 ,  H01L49/02 ,  H01F17/00 ,  H01L23/00

Abstract: An apparatus and method of forming a magnetic inductor circuit. A substrate is provided and a first magnetic layer is formed in contact with one layer of the substrate. A conductive trace is formed in contact with the first magnetic layer. A sacrificial cooper layer protects the magnetic material from wet chemistry process steps. A conductive connection is formed from the conductive trace to the outside substrate, the conductive connection comprising a horizontal connection formed by in-layer plating. A second magnetic layer is formed in contact with the conductive trace. Instead of a horizontal connection, a vertical conductive connection can be formed that is perpendicular to the magnetic layers, by drilling a first via in a second of the magnetic layers, forming a buildup layer, and drilling a second via through the buildup layer, where the buildup layer protects the magnetic layers from wet chemistry processes.

公开(公告)号：US20200075511A1

公开(公告)日：2020-03-05

申请号：US16119923

申请日：2018-08-31

Applicant: Intel Corporation

Inventor： Andrew J. Brown ,  Rahul Jain ,  Prithwish Chatterjee ,  Lauren A. Link ,  Sai Vadlamani

IPC: H01L23/64 ,  H01L23/538 ,  H01L23/00 ,  H01L21/48 ,  H01L21/683 ,  H01L21/78

Abstract: A coreless semiconductor package comprises a plurality of horizontal layers of dielectric material. A magnetic inductor is situated at least partly in a first group of the plurality of layers. A plated laser stop is formed to protect the magnetic inductor against subsequent acidic processes. An EMIB is situated above the magnetic inductor within a second group of the plurality of layers. Vias and interconnections are configured within the horizontal layers to connect a die of the EMIB to other circuitry. A first level interconnect is formed on the top side of the package to connect to the interconnections. BGA pockets and BGA pads are formed on the bottom side of the package. In a second embodiment a polymer film is used as additional protection against subsequent acidic processes. The magnetic inductor comprises a plurality of copper traces encapsulated in magnetic material.

公开(公告)号：US20190393217A1

公开(公告)日：2019-12-26

申请号：US16402588

申请日：2019-05-03

Applicant: Intel Corporation

Inventor： Cheng Xu ,  Rahul Jain ,  Seo Young Kim ,  Kyu Oh Lee ,  Ji Yong Park ,  Sai Vadlamani ,  Junnan Zhao

IPC: H01L27/07 ,  H01L49/02 ,  H01L23/64 ,  H01L23/522 ,  H01L23/00

Abstract: Disclosed embodiments include an embedded thin-film capacitor and a magnetic inductor that are assembled in two adjacent build-up layers of a semiconductor package substrate. The thin-film capacitor is seated on a surface of a first of the build-up layers and the magnetic inductor is partially disposed in a recess in the adjacent build up layer. The embedded thin-film capacitor and the integral magnetic inductor are configured within a die shadow that is on a die side of the semiconductor package substrate.

公开(公告)号：US20190304661A1

公开(公告)日：2019-10-03

申请号：US15938119

申请日：2018-03-28

Applicant: Intel Corporation

Inventor： Cheng Xu ,  Kyu-Oh Lee ,  Junnan Zhao ,  Rahul Jain ,  Ji Yong Park ,  Sai Vadlamani ,  Seo Young Kim

IPC: H01F27/28 ,  H01F27/24 ,  H01F27/02

Abstract: Embodiments include an inductor that comprises an inductor trace and a magnetic body surrounding the inductor trace. In an embodiment, the magnetic body comprises a first step surface and a second step surface. Additional embodiments include an inductor that includes a barrier layer. In an embodiment, an inductor trace is formed over a first surface of the barrier layer. Embodiments include a first magnetic body over the inductor trace and the first surface of the barrier layer, and a second magnetic body over a second surface of the barrier layer opposite the first surface. In an embodiment, a width of the second magnetic body is greater than a width of the first magnetic body.

公开(公告)号：US20190250326A1

公开(公告)日：2019-08-15

申请号：US16061540

申请日：2015-12-14

Applicant: Intel Corporation

Inventor： Robert Alan May ,  Kristof Darmawikarta ,  Rahul Jain ,  Sri Ranga Sai Boyapati ,  Maroun Moussallem ,  Rahul N. Manepalli ,  Srinivas Pietambaram

IPC: G02B6/122 ,  G02B6/132 ,  H01P5/107

CPC classification number: G02B6/122 ,  G02B6/132 ,  G02B6/134 ,  G02B2006/12035 ,  H01P5/107

Abstract: This document discusses, among other things, a waveguide including a first metal having an outer surface proximate a dielectric material and an inner surface defining a path of the waveguide, a method of receiving an optical signal at the inner surface of the waveguide and transmitting the optical signal along at least a portion of the path of the waveguide. A method of integrating a waveguide in a substrate includes depositing sacrificial metal on a first surface of a carrier substrate to form a core of the waveguide, depositing a first metal over the sacrificial metal and at least a portion of the first surface of the carrier substrate, forming an outer surface of the waveguide and a conductor separate from the sacrificial metal, and depositing dielectric material over the first surface of the carrier substrate about the conductor.

公开(公告)号：US20190221345A1

公开(公告)日：2019-07-18

申请号：US15870302

申请日：2018-01-12

Applicant: Intel Corporation

Inventor： Sai Vadlamani ,  Prithwish Chatterjee ,  Rahul Jain ,  Kyu Oh Lee ,  Sheng C. Li ,  Andrew J. Brown ,  Lauren A. Link

IPC: H01F1/42 ,  H01L21/56 ,  H01F27/38 ,  B32B27/38 ,  C22C45/04 ,  H01F27/28

CPC classification number: H01F1/42 ,  B32B27/38 ,  C22C45/04 ,  H01F27/2804 ,  H01F27/38 ,  H01L21/56

Abstract: A substrate for an integrated circuit package, the substrate comprising a dielectric, at least one conductor plane within the dielectric, and a planar magnetic structure comprising an organic magnetic laminate embedded within the dielectric, wherein the planar magnetic structure is integrated within the at least one conductor plane.

公开(公告)号：US10297563B2

公开(公告)日：2019-05-21

申请号：US15267065

申请日：2016-09-15

Applicant: Intel Corporation

Inventor： Rahul Jain ,  Kyu Oh Lee ,  Amanda E. Schuckman ,  Steve S. Cho

IPC: H01L23/00

Abstract: Techniques and mechanisms for providing effective connectivity with surface level microbumps on an integrated circuit package substrate. In an embodiment, different metals are variously electroplated to form a microbump which extends through a surface-level dielectric of a substrate to a seed layer including copper. The microbump includes nickel and tin, wherein the nickel aids in mitigating an absorption of seed layer copper. In another embodiment, the microbump has a mass fraction of tin, or a mass fraction of nickel, that is different in various regions along a height of the microbump.

公开(公告)号：US11842981B2

公开(公告)日：2023-12-12

申请号：US17466842

申请日：2021-09-03

Applicant: Intel Corporation

Inventor： Rahul Jain ,  Ji Yong Park ,  Kyu Oh Lee

IPC: H01L23/00 ,  H01L25/00 ,  H01L23/538 ,  H01L25/065

CPC classification number: H01L24/81 ,  H01L23/5385 ,  H01L24/17 ,  H01L25/0652 ,  H01L25/50 ,  H01L23/5383 ,  H01L23/5384 ,  H01L2224/16113 ,  H01L2224/16235

Abstract: Examples relate to a die interconnect substrate comprising a bridge die comprising at least one bridge interconnect connecting a first bridge die pad of the bridge die to a second bridge die pad of the bridge die. The die interconnect substrate further comprises a substrate structure comprising a substrate interconnect electrically insulated from the bridge die, wherein the bridge die is embedded in the substrate structure. The die interconnect substrate further comprises a first interface structure for attaching a semiconductor die to the substrate structure, wherein the first interface structure is connected to the first bridge die pad. The die interconnect substrate further comprises a second interface structure for attaching a semiconductor die to the substrate structure, wherein the second interface structure is connected to the substrate interconnect. A surface of the first interface structure and a surface of the second interface structure are at the same height.

公开(公告)号：US11664290B2

公开(公告)日：2023-05-30

申请号：US17459993

申请日：2021-08-27

Applicant: INTEL CORPORATION

Inventor： Rahul Jain ,  Kyu Oh Lee ,  Siddharth K. Alur ,  Wei-Lun K. Jen ,  Vipul V. Mehta ,  Ashish Dhall ,  Sri Chaitra J. Chavali ,  Rahul N. Manepalli ,  Amruthavalli P. Alur ,  Sai Vadlamani

IPC: H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L23/498 ,  H01L23/532 ,  H01L23/538 ,  H01L23/00 ,  H01L25/065

CPC classification number: H01L23/3185 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/5381 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/53295 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0655 ,  H01L25/0657 ,  H01L2224/16227 ,  H01L2224/81 ,  H01L2224/83051 ,  H01L2924/18161

Abstract: An apparatus is provided which comprises: a substrate, a die site on the substrate to couple with a die, a die side component site on the substrate to couple with a die side component, and a raised barrier on the substrate between the die and die side component sites to contain underfill material disposed at the die site, wherein the raised barrier comprises electroplated metal. Other embodiments are also disclosed and claimed.

公开(公告)号：US11610706B2

公开(公告)日：2023-03-21

申请号：US15870302

申请日：2018-01-12

Applicant: Intel Corporation

Inventor： Sai Vadlamani ,  Prithwish Chatterjee ,  Rahul Jain ,  Kyu Oh Lee ,  Sheng C. Li ,  Andrew J. Brown ,  Lauren A. Link

IPC: H01F1/42 ,  H01F27/38 ,  B32B27/38 ,  C22C45/04 ,  H01F17/00 ,  H01L23/498 ,  H01F27/28 ,  H01L21/56 ,  H01F17/06

Abstract: A substrate for an integrated circuit package, the substrate comprising a dielectric, at least one conductor plane within the dielectric, and a planar magnetic structure comprising an organic magnetic laminate embedded within the dielectric, wherein the planar magnetic structure is integrated within the at least one conductor plane.