公开(公告)号：SG11202110310RA

公开(公告)日：2021-10-28

申请号：SG11202110310R

申请日：2020-03-16

Applicant: LAM RES CORP

Inventor： HENRI JON ,  COLINJIVADI KARTHIK S ,  ROBERTS FRANCIS SLOAN ,  REDDY KAPU SIRISH ,  TAN SAMANTHA SIAMHWA ,  LEE SHIH-KED ,  HUDSON ERIC ,  SCHROEDER TODD ,  YANG JIALING ,  ZHENG HUIFENG

IPC: H01L21/3065 ,  C23C16/04 ,  C23C16/26 ,  C23C16/50 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67

Abstract: Fabricating a semiconductor substrate by (a) vertical etching a feature having sidewalls and a depth into one or more layers formed on the semiconductor substrate and (b) depositing an amorphous carbon liner onto the sidewalls of the feature. Steps (a) and optionally (b) are iterated until the vertical etch feature has reached a desired depth. With each iteration of (a), the feature is vertical etched deeper into the one or more layers, while the amorphous carbon liner resists lateral etching of the sidewalls of the feature. With each optional iteration of (b), the deposited amorphous carbon liner on the sidewalls of the feature is replenished.

公开(公告)号：SG10201507919TA

公开(公告)日：2015-10-29

申请号：SG10201507919T

申请日：2008-03-26

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  HUDSON ERIC ,  MARAKHTANOV ALEXEI ,  FISCHER ANDREAS ,  MORAVEJ MARYAM

Abstract: In a plasma processing chamber, a method for processing a substrate is provided. The method includes supporting the substrate in the plasma processing chamber configured with an upper electrode (UE) and a lower electrode (LE), configuring at least one radio frequency power source to ignite plasma between the UE and the LE, and providing a conductive coupling ring, the conductive coupling ring is coupled to the LE to provide a conductive path. The method further includes providing a plasma-facing-substrate-periphery (PFSP) ring, the PFSP ring being disposed above the conductive coupling ring. The method yet further includes coupling the PFSP ring to at least one of a direct current (DC) ground through an RF filter, the DC ground through the RF filter and a variable resistor, a positive DC power source through the RF filter, and a negative DC power source through the RF filter to control plasma processing parameters.

公开(公告)号：IL188279A

公开(公告)日：2012-12-31

申请号：IL18827907

申请日：2007-12-19

Applicant: LAM RES CORP ,  HUDSON ERIC ,  KEIL DOUGLAS ,  MARAKHTANOV ALEXEI ,  KIMBALL CHRISTOPHER

Inventor： HUDSON ERIC ,  KEIL DOUGLAS ,  MARAKHTANOV ALEXEI ,  KIMBALL CHRISTOPHER

Abstract: Methods using a probe apparatus configured to measure a set of electrical characteristics in a plasma include providing a chamber wall including at least a set of plasma chamber surfaces configured to be exposed to a plasma, the plasma having a set of electrical characteristics. The method includes installing a collection disk structure configured to be exposed to the plasma, wherein the collection disk structure having at least a body disposed within the chamber wall and a collection disk structure surface that is either coplanar or recessed with at least one of the set of plasma chamber surfaces and providing a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers. The method may include coupling a thermal grounding element with the conductive path for providing thermal grounding to at least the conductive path and may alternatively or additionally include disposing an insulation barrier configured to substantially electrically separate at least one of the collection disk and the conductive path.

公开(公告)号：SG177922A1

公开(公告)日：2012-02-28

申请号：SG2011096096

申请日：2007-12-14

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  HUDSON ERIC ,  MARAKHTANOV ALEXEI ,  FISCHER ANDREAS

Abstract: PLASMA-ENHANCED SUBSTRATE PROCESSING METHOD AND APPARATUS AbstractA method and apparatus for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is disposed on the lower electrode during plasma processing. The method includes providing at least a first RF signal, which has a first RF frequency, to the lower electrode. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The method also includes providing a second RF signal to the upper electrode. The second RF signal also has the first RF frequency. A phase of the second RF signal is offset from a phase of the first RF signal by a value that is less than 10%. The method further includes processing the substrate while the second RF signal is provided to the upper electrode.Figure: 3

公开(公告)号：SG173403A1

公开(公告)日：2011-08-29

申请号：SG2011052701

申请日：2007-06-01

Applicant: LAM RES CORP

Inventor： HUDSON ERIC ,  FISCHER ANDREAS

Abstract: 18APPARATUSES, SYSTEMS AND METHODS FOR RAPID CLEANING OF PLASMA CONFINEMENT RINGS WITH MINIMAL EROSION OF OTHER CHAMBER PARTSAbstractAn apparatus used for rapid removal of polymer films from plasma confinement rings while minimizing erosion of other plasma etch chamber components is disclosed. The apparatus includes a center assembly, an electrode plate, a confinement ring stack, a first plasma source, and a second plasma source. The electrode plate is affixed to a surface of the center assembly with a channel defined along the external circumference therein. A first plasma source is disposed within the channel and along the external circumference of the center assembly, wherein the first plasma source is configured to direct a plasma to the inner circumferential surface of the confinement ring stack. A second plasma source located away from the first plasma source is configured to perform processing operations on a substrate within the etch chamber.Figure 2

公开(公告)号：SG171843A1

公开(公告)日：2011-07-28

申请号：SG2011038601

申请日：2009-12-16

Applicant: LAM RES CORP

Inventor： FISCHER ANDREAS ,  HUDSON ERIC

Abstract: A plasma processing system for processing at least a substrate with plasma. The plasma processing chamber is capable of controlling ion energy distribution. The plasma processing system may include a first electrode. The plasma processing system also includes a second electrode that is different from the first electrode and is configured for bearing the substrate. The plasma processing system may also include a signal source coupled with the first electrode. The signal source may provide a non-sinusoidal signal through the first electrode to control ion energy distribution at the substrate when the substrate is processed in the plasma processing system, wherein the non-sinusoidal signal is periodic.

公开(公告)号：IL176466A

公开(公告)日：2010-05-31

申请号：IL17646606

申请日：2006-06-21

Applicant: LAM RES CORP ,  TAKESHITA KENJI ,  TURMEL ODETTE ,  KOZAKEVICH FELIX ,  HUDSON ERIC

Inventor： TAKESHITA KENJI ,  TURMEL ODETTE ,  KOZAKEVICH FELIX ,  HUDSON ERIC

IPC: H01L21/311 ,  H01L21/768

Abstract: A method in a plasma processing system for etching a feature through a given layer on a semiconductor substrate. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method also includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the given layer. The method additionally includes striking a plasma from the etchant source gas. Furthermore, the method includes etching the feature at least partially through the given layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 45 MHz and about 75 MHz. The bias RF signal further has a bias RF power component that is configured to cause the etch feature to be etched with an etch selectivity to a second layer of the substrate that is higher than a predefined selectivity threshold.