PRE-COATING AND WAFER-LESS AUTO-CLEANING SYSTEM AND METHOD
    2.
    发明申请
    PRE-COATING AND WAFER-LESS AUTO-CLEANING SYSTEM AND METHOD 审中-公开
    预涂和无水自动清洗系统及方法

    公开(公告)号:WO2010045513A3

    公开(公告)日:2010-07-15

    申请号:PCT/US2009060931

    申请日:2009-10-16

    Abstract: In a wafer processing system having an electrode, an electrostatic chuck (ESC) and a confinement chamber portion, the ESC is established to be RF-floating, whereas a confinement chamber portion is grounded during a pre-coating process. Accordingly, the confinement chamber portion and the upper electrode are selectively targeted for pre-coating material deposition. As such, the amount of pre-coating material that is deposited onto the ESC is greatly reduced over that of conventional systems. Therefore, less time, energy and material are needed to remove pre-coating material from the ESC during a wafer auto clean (WAC) process. Further, the upper electrode is established to be RF-floating, whereas the confinement chamber portion is grounded during a WAC process. As such, the cleaning material is selectively targeted toward the confinement hardware portion of the chamber. Therefore, the upper electrode is subjected to less wear during a WAC process.

    Abstract translation: 在具有电极,静电卡盘(ESC)和约束室部分的晶片处理系统中,ESC被建立为RF浮动,而限制室部分在预涂工艺期间接地。 因此,限制室部分和上部电极被选择性地靶向用于预涂材料沉积。 因此,与常规系统相比,沉积在ESC上的预涂料的量大大降低。 因此,在晶圆自动清洗(WAC)过程中,需要较少的时间,能量和材料来从ESC中去除预涂材料。 此外,上电极被建立为RF浮动,而限制室部分在WAC处理期间接地。 因此,清洁材料选择性地朝向腔室的限制硬件部分。 因此,在WAC工艺期间,上电极受到较少的磨损。

    PRE-COATING AND WAFER-LESS AUTO-CLEANING SYSTEM AND METHOD

    公开(公告)号:SG194414A1

    公开(公告)日:2013-11-29

    申请号:SG2013075452

    申请日:2009-10-16

    Applicant: LAM RES CORP

    Abstract: PRE-COATING AND WAFER-LESS AUTO-CLEANING SYSTEM AND METHODIn a wafer processing system having an electrode, an electrostatic chuck (ESC) and a confinement chamber portion, the ESC is established to be RF-floating, whereas a confinement chamber portion is grounded during a pre-coating process. Accordingly, the confinement chamber portion and the upper electrode are selectively targeted for pre-coating material deposition. As such, the amount of pre-coating material that is deposited onto the ESC is greatly reduced over that of conventional systems. Therefore, less time, energy and material are needed to remove pre-coating material from the ESC during a wafer auto clean (WAC) process. Further, the upper electrode is established to be RF-floating, whereas the confinement chamber portion is grounded during a WAC process As such, the cleaning material is selectively targeted toward the confinement hardware portion of the chamber. Therefore, the upper electrode is subjected to less wear during a WAC process. Figure for publication: None

    METHOD AND APPARATUS FOR DC VOLTAGE CONTROL ON RF-POWERED ELECTRODE

    公开(公告)号:SG10201507919TA

    公开(公告)日:2015-10-29

    申请号:SG10201507919T

    申请日:2008-03-26

    Applicant: LAM RES CORP

    Abstract: In a plasma processing chamber, a method for processing a substrate is provided. The method includes supporting the substrate in the plasma processing chamber configured with an upper electrode (UE) and a lower electrode (LE), configuring at least one radio frequency power source to ignite plasma between the UE and the LE, and providing a conductive coupling ring, the conductive coupling ring is coupled to the LE to provide a conductive path. The method further includes providing a plasma-facing-substrate-periphery (PFSP) ring, the PFSP ring being disposed above the conductive coupling ring. The method yet further includes coupling the PFSP ring to at least one of a direct current (DC) ground through an RF filter, the DC ground through the RF filter and a variable resistor, a positive DC power source through the RF filter, and a negative DC power source through the RF filter to control plasma processing parameters.

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