公开(公告)号：EP1030338A3

公开(公告)日：2002-06-12

申请号：EP99403176.3

申请日：1999-12-16

Applicant: SONY CORPORATION ,  Hitachi Powdered Metals Co., Ltd.

Inventor： Iida, Koichi ,  Saito, Ichiro ,  Tachizono, Shinichi ,  Yamagishi, Takeshi

IPC: H01J1/30 ,  H01J3/02 ,  H01J1/304 ,  H01J9/02

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30423 ,  H01J2201/30457

Abstract: The field emission type cathode is made as a multilayered structure (33) in which conductive platelike corpuscles (30) are piled, whereby an edge portion of end surface of a field emission type cathode for emitting electrons is formed sharply and easily.

公开(公告)号：EP0829094A4

公开(公告)日：1998-06-17

申请号：EP96916893

申请日：1996-05-31

Applicant: ADVANCED VISION TECH INC ,  POTTER MICHAEL D

Inventor： POTTER MICHAEL D

IPC: H01J9/39 ,  H01J1/304 ,  H01J3/02 ,  H01J7/18 ,  H01J9/02 ,  H01J9/40

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30423 ,  H01J2209/385

Abstract: A process for fabricating, in a planar substrate, a hermetically sealed chamber for a field-emission cell or the like, allows operating the device in a vacuum or a low pressure inert gas. The process includes methods of covering an opening (160), enclosing the vacuum or gas, and methods of including an optional quantity of gettering material. An example of a device using such a hermetically sealed chamber is a lateral-emitter field-emission device (10) having a lateral emitter (100) parallel to a substrate (20) and having a simplified anode structure (70). In one simple embodiment, a control electrode (140) is positioned in a plane above the emitter edge (110) and automatically aligned to that edge. The simplified devices are specially adapted for field emission display arrays. An overall fabrication process uses steps (S1-S18) to produce the devices and arrays. Various embodiments of the fabrication process allow the use of conductive or insulating substrates (20), allow fabrication of devices having various functions and complexity, and allow covering a trench opening (160) etched through the emitter and insulator, thus enclosing the hermetically sealed chamber.

公开(公告)号：WO02086931B1

公开(公告)日：2003-04-03

申请号：PCT/US0211190

申请日：2002-04-10

Applicant: COPYTELE INC ,  VOLGA SVET LTD

Inventor： KASTALSKY ALEXANDER ,  SHOKHOR SERGEY ,  DISANTO FRANK J ,  KRUSOS DENIS A ,  GORFINKEL BORIS ,  ABANSHIN NIKOLAI

IPC: H01J1/304 ,  H01J9/02 ,  H01J31/12 ,  H01J1/00 ,  H01J1/02 ,  H01J1/30 ,  H01J1/36 ,  H01J1/38

CPC classification number: H01J1/3046 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30423

Abstract: A Reflective Field Emission Display system, components and methods for fabricating the components is disclosed. In the FED system disclosed, a plurality of reflective edge emission pixed elements (10) are arranged in a matrix of N rows and M columns, the pixel elements contain an edge emitter (140) that is operable to emit electrons and a reflector (110) that is operable to extract and laterally reflect emitted electrons. A collector layer (310), laterally disposed from said reflector layer (110) is operable to attract the reflected electrons. Deposited on the collector layer (310) is a phosphor layer (195) that emits a photon of a known wavelength when activated by an attracted electron. A transparent layer (185) that is oppositely positioned with respect to the pixel elements (100) is operable to attract reflected electrons and prevent reflected electrons from striking the phosphor layer (195). Color displays are further contemplated by incorporating individually controlled sub-pixel elements in each of the pixel elements (100). The phosphor layers (195) emit photons having wavelenghts in the red, green or blue color spectrum.

Abstract translation: 公开了一种反射场发射显示系统，用于制造组件的部件和方法。 在公开的FED系统中，多个反射边缘发射像素元件（10）以N行M列排列成矩阵，像素元件包含可发射电子的边缘发射器（140）和反射器（110） ），其可操作以提取并横向反射发射的电子。 从所述反射器层（110）横向设置的集电极层（310）可操作以吸引反射的电子。 沉积在集电极层（310）上的是被吸引的电子激发时发射已知波长的光子的磷光体层（195）。 相对于像素元件（100）相对定位的透明层（185）可操作以吸引反射的电子并防止反射的电子撞击荧光体层（195）。 通过在每个像素元件（100）中并入独立控制的子像素元件，进一步考虑了彩色显示器。 荧光体层（195）发射具有红色，绿色或蓝色色谱波长的光子。

公开(公告)号：WO01039236A1

公开(公告)日：2001-05-31

申请号：PCT/US2000/031631

申请日：2000-11-17

IPC: H01J1/304 ,  H01J9/02

CPC classification number: H01J1/3042 ,  H01J2201/30423

Abstract: A cathode structure for use in field emission display (FED) devices includes four layers. A first layer consists of conducting lines (14) supported on an insulating substrate. A second layer consists of thin non-conducting lines (18) crossing the conducting lines (14). A third layer consists of a thick layer (22) of non-conducting material with holes centered between the thin non-conducting lines (18) of the second layer and extending over a portion (38) of the thin non-conducting lines (18). A fourth layer consists of conducting lines (30) containing holes (34) of the same dimension as and aligned with the holes in the third layer exposing portions of the conducting lines (14) of the first layer and of the non-conducting lines (18) of the second layer. Emissive material is deposited on the exposed portions of the conducting lines (14) of the first layer to produce a cathode for an FED device. The four-layer cathode structure improves emission characteristics such as current density and uniformity for planar edge emitters and surface emitters.

Abstract translation: 用于场发射显示（FED）装置的阴极结构包括四层。 第一层由支撑在绝缘基板上的导线（14）组成。 第二层由穿过导线（14）的细非导线（18）组成。 第三层由非导电材料的厚层（22）组成，其中孔位于第二层的薄非导电线（18）之间，并且延伸在薄的非导电线（18）的一部分（38）上 ）。 第四层包括导电线（30），其包含与第三层中的孔相同的尺寸的孔（34），暴露第一层和非导电线的导线（14）的部分 18）。 发射材料沉积在第一层的导电线（14）的暴露部分上，以产生用于FED器件的阴极。 四层阴极结构提高了平面边缘发射体和表面发射体的发射特性，如电流密度和均匀性。

公开(公告)号：WO99040604A1

公开(公告)日：1999-08-12

申请号：PCT/US1999/002609

申请日：1999-02-06

IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J21/10

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30423

Abstract: A lateral-emitter field emission device (10) has a gate (60) that is separated by an insulating layer (80) from a vaccum- or gas-filled microchamber environment (20) containing other elements of the device (10). For example, the gate (60) may be disposed external to the microchamber (20). The insulating layer (80) is disposed such that there is no vaccum- or gas-filled path to the gate for electrons that are emitted from a lateral emitter (40, 100). The insulating layer (70, 80) disposed between the emitter and the gate preferably comprises a material having a dielectric constant greater than one. The insulating layer also preferably has a low secondary electron yield over the device's operative range of electron energies. For display applications, the insulating layer is preferably transparent. Emitted electrons are confined to the microchamber (20) containing their emitter (100). Thus, the gate current component of the emitter current consists of displacement current only. This displacement current is a result of any change in potential of the gate relative to other elements such as, for example, relative to the emitter. Direct electron current from the emitter to the gate is prevented. An array of the devices comprises an array of microchambers, so that electron current from each emitter (100) can reach only the anode (50, 55) in the same microchamber, even for diode devices lacking a gate electrode (60). A fabrication process (S1-S28) is specially adapted for fabricating the device and arrays of such devices.

Abstract translation: 侧向发射场场发射装置（10）具有由绝缘层（80）与包含装置（10）的其它元件的真空或气体填充的微室环境（20）隔开的栅极（60）。 例如，门（60）可以设置在微型仓（20）的外部。 绝缘层（80）被布置成使得从侧向发射器（40,100）发射的电子没有真空或气体填充到栅极的路径。 设置在发射极和栅极之间的绝缘层（70,80）优选地包括具有大于1的介电常数的材料。 绝缘层还优选在器件的电子能量的操作范围内具有低的二次电子产率。 对于显示应用，绝缘层优选是透明的。 发射电子被限制在包含其发射极（100）的微室（20）中。 因此，发射极电流的栅极电流分量仅由位移电流组成。 该位移电流是栅极相对于其它元件（例如相对于发射极）的电位的任何变化的结果。 防止从发射极到栅极的直接电子电流。 器件的阵列包括微阵列阵列，使得即使对于没有栅电极（60）的二极管器件，来自每个发射极（100）的电子电流也可以仅到达同一微室中的阳极（50,55）。 制造工艺（S1-S28）特别适用于制造这种装置的装置和阵列。

公开(公告)号：WO1997002586A1

公开(公告)日：1997-01-23

申请号：PCT/US1996011332

申请日：1996-07-03

Applicant: ADVANCED VISION TECHNOLOGIES, INC. ,  POTTER, Michael, D.

Inventor： ADVANCED VISION TECHNOLOGIES, INC.

IPC: H01J09/02

CPC classification number: H01J9/025 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/00

Abstract: A lateral-emitter electron field-emission display device structure (10) incorporates a thin-film emitter (100) having an emitting edge (110) in direct contact with a non-conducting or very high resistivity phosphor (75), thereby eliminating a gap between the emitter and the phosphor. Such a gap has been a part of all field-emission display devices in the prior art. The ultra-thin-film lateral emitter (100) of the structure is deposited in a plane parallel to the device's substrate (20) and has an inherently small radius of curvature at its emitting edge, which may extend into phosphor (75). A fabrication process specially adapted to make the structure includes a directional trench etch (S15), which both defines the emitting edge and provides an opening (160) to receive a non-conducting phosphor (75). This phosphor covers an anode (70) and is automatically aligned in contact with the emitter edge (110). When an electrical bias voltage is applied between the emitter and anode, electrons are injected directly into the phosphor material from the emitter edge, exciting cathodoluminescence in the phosphor to emit light which is visible in a wide range of viewing angles. With minor variations in the fabrication process, a lateral-emitter electron field emission display device may be made with an extremely small emitter-phosphor gap, having a width less than 100 times the thickness of the ultra-thin emitter (100) or preferably zero gap width. Triode or tetrode embodiments include control electrodes (140).

Abstract translation: 横向发射极电子场发射显示器件结构（10）包括具有与非导电或非常高电阻率的磷光体（75）直接接触的发射边缘（110）的薄膜发射器（100），从而消除 发射极和磷光体之间的间隙。 这样的间隙已经是现有技术中的所有场致发射显示装置的一部分。 该结构的超薄膜横向发射器（100）沉积在平行于器件的衬底（20）的平面中，并且在其发射边缘处具有固有的小的曲率半径，其可以延伸到磷光体（75）中。 特别适于使该结构包括定向沟槽蚀刻（S15）的制造工艺，其均限定了发射边缘并且提供用于接收非导电磷光体（75）的开口（160）。 该荧光体覆盖阳极（70）并且自动对准与发射极边缘（110）接触。 当在发射极和阳极之间施加电偏压时，电子从发射极边缘直接注入到荧光体材料中，激发荧光体中的阴极发光，发射在宽视角范围内可见的光。 在制造工艺中有微小变化的情况下，横向发射极电子场发射显示装置可以制造成具有极小的发射 - 磷光体间隙，其宽度小于超薄发射极（100）的厚度的100倍，或者优选为零 间隙宽度。 三极管或四极管实施例包括控制电极（140）。

公开(公告)号：EP2219200A3

公开(公告)日：2011-07-27

申请号：EP10152999.8

申请日：2010-02-09

Applicant: Canon Kabushiki Kaisha

Inventor： Suwa, Takanori ,  Takeda, Toshihiko ,  Hiroki, Tamayo

IPC: H01J1/304 ,  H01J3/02 ,  H01J31/12

CPC classification number: H01J3/021 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2203/0216 ,  H01J2203/0272 ,  H01J2329/0423 ,  H01J2329/4613 ,  H01J2329/4673 ,  H01J2329/4682

Abstract: An electron beam apparatus is provided having an electron emitting device which has a simple configuration, exhibits high electron emission efficiency, operates stably, and in which emitted electrons are effectively converged. The electron beam apparatus includes: an insulator having a notch on its surface; a gate positioned on the surface of the insulator; at least one cathode having a protruding portion protruding from an edge of the notch toward the gate, and positioned on the surface of the insulator so that the protruding portion is opposed to the gate; and an anode arranged to be opposed to the protruding portion via the gate, wherein the gate is formed on the surface of the insulator so that at least a part of a region opposed to the cathode is projected outward and recessed portions are provided in which ends of the gate are recessed and interpose the projected region.

公开(公告)号：EP2194563A2

公开(公告)日：2010-06-09

申请号：EP09175519.9

申请日：2009-11-10

Applicant: Canon Kabushiki Kaisha

Inventor： Aoki, Naofumi ,  Nishida, Shoji

IPC: H01J9/02 ,  H01J1/304 ,  H01J31/12

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J1/3044 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/30426 ,  H01J2201/30446 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0423 ,  H01J2329/0439 ,  H01J2329/0471 ,  H01J2329/0473

Abstract: The following method is provided: a method of readily fabricating an electron-emitting device (10), coated with a low-work function material, having good electron-emitting properties with high reproducibility. Differences in electron-emitting properties between electron-emitting devices each fabricated by the method are reduced. Before a structure (3) is coated with the low-work function material, a metal oxide layer (4) is formed on the structure (3).

Abstract translation: 提供了下面的方法：易制造到电子发射器件（10），涂覆有低功函数材料，具有高再现性良好的电子发射特性的方法。 在由所述方法制造的电子发射器件之间的电子发射特性的差异降低。 的结构（3）之前被涂覆有低功函数材料，金属氧化物层（4）形成在所述结构（3）。

公开(公告)号：EP0871195A1

公开(公告)日：1998-10-14

申请号：EP98400893.8

申请日：1998-04-10

Applicant: SONY CORPORATION

Inventor： Iwase, Yuichi ,  Okita, Masami

IPC: H01J1/30 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30423

Abstract: A field emission display has an element including a first electrode (4), and a second electrode (2) laminated to the first electrode (4) through an insulating layer (3). The first electrode (4) has an opening (7); the second electrode (2) has a hole (9) of a planar shape corresponding to that of the opening (7) at a position matched with the opening (7); and the insulating layer (3) has a through-hole (8) continuous to the opening (7) and the hole (9). An upper edge portion of the hole (9) is formed into a cross-sectional shape having an edge angle in a range of 80 to 100°, and at least part of the upper edge portion of the hole (9) is exposed in the through-hole (8). In this element, electrons are emitted from the second electrode (2) through the upper edge portion of the hole (9) exposed in the through-hole (8) by applying a specific voltage between the first electrode (4) and the second electrode (2). With this configuration, a distance between the gate electrode (4) and a field emission portion of the cathode electrode (2) can be accurately controlled with a simple structure. To enhance an emission efficiency of electrons, a second gate electrode (16) may be provided on the lower side of the cathode electrode (2) through an insulating layer (17).

Abstract translation: 场致发射显示器具有包括通过绝缘层（3）层叠到第一电极（4）的第一电极（4）和第二电极（2）的元件。 第一电极（4）具有开口（7）; 第二电极（2）在与开口（7）配合的位置处具有与开口（7）的孔相对应的平面形状的孔（9）。 并且所述绝缘层（3）具有与所述开口（7）和所述孔（9）连续的通孔（8）。 孔（9）的上缘部形成为具有80〜100°的边缘角度的截面形状，孔（9）的上缘部的至少一部分露出在 通孔（8）。 在该元件中，通过在第一电极（4）和第二电极（4）之间施加特定电压，从第二电极（2）通过暴露在通孔（8）中的孔（9）的上边缘部分发射电子 （2）。 利用这种结构，能够以简单的结构精确地控制栅电极（4）和阴极电极（2）的场发射部分之间的距离。 为了提高电子的发射效率，可以通过绝缘层（17）在阴极电极（2）的下侧设置第二栅电极（16）。

公开(公告)号：EP0829093A4

公开(公告)日：1998-06-17

申请号：EP96916907

申请日：1996-05-31

Applicant: ADVANCED VISION TECH INC ,  POTTER MICHAEL D

Inventor： POTTER MICHAEL D

IPC: H01J9/02 ,  H01J3/02 ,  H01J29/04 ,  H01J29/20 ,  H01J31/12 ,  H01J1/62 ,  H01J63/04

CPC classification number: H01J3/022 ,  H01J2201/30423 ,  H01J2209/385

Abstract: A lateral field-emission device (10) has a lateral emitter (100) substantially parallel to a substrate (20) and has a simplified anode structure (70). The anode's top surface is precisely spaced apart from the plane of the lateral emitter and receives electrons emitted by field emission from the edge of the lateral emitter cathode, when a suitable bias voltage is applied. The device may be configured as a diode, or as a triode, tetrode, etc. having control electrodes (140) positioned to allow control of current from the emitter to the anode by an electrical signal applied to the control electrode.

Abstract translation: 横向场发射器件（10）具有基本上平行于衬底（20）的横向发射极（100）并具有简化的阳极结构（70）。 当施加合适的偏置电压时，阳极的顶表面与侧面发射体的平面精确间隔开并且接收通过从侧面发射体阴极的边缘发射的场致发射的电子。 该装置可以被配置为具有控制电极（140）的二极管或三极管，四极管等，其被设置为允许通过施加到控制电极的电信号来控制从发射极到阳极的电流。