公开(公告)号：WO2010076136A1

公开(公告)日：2010-07-08

申请号：PCT/EP2009/066698

申请日：2009-12-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  IBM UNITED KINGDOM LIMITED ,  MASTERS, Mark, Eliot ,  BELL, Paul, Davis ,  PATRICK, David, Stuart

Inventor： MASTERS, Mark, Eliot ,  BELL, Paul, Davis ,  PATRICK, David, Stuart

IPC: G01N23/22 ,  G01R31/28 ,  H01J37/26

CPC classification number: H01J37/268 ,  G01R31/307 ,  H01J37/265 ,  H01J2237/043 ,  H01J2237/24564 ,  H01J2237/24592

Abstract: A method for nanoprobing a device structure (82) of an integrated circuit includes scanning a primary charged particle beam (25) across a first region of the device structure with at least one probe (24a, 26a, 28a, 30a) proximate to the first region and a second region (91) of the device structure is masked from the primary charged particle beam. The method further includes collecting secondary electrons (35) emitted from the first region of the device structure and the at least one probe to form a secondary electron image (94). The secondary electron image includes the first region and the at least one probe as imaged portions and the second region as a non-imaged portion. Alternatively, the second region may be scanned by the charged particle beam at a faster scan rate than the first region so that the second region is also an imaged portion of the secondary electron image.

Abstract translation: 一种用于纳米结构集成电路的器件结构（82）的方法包括：跨过器件结构的第一区域扫描初级带电粒子束（25），其中至少一个探针（24a，26a，28a，30a）接近第一 区域，并且器件结构的第二区域（91）被从初级带电粒子束掩蔽。 该方法还包括收集从器件结构的第一区域发射的二次电子（35）和至少一个探针以形成二次电子图像（94）。 二次电子图像包括作为成像部分的第一区域和至少一个探针，以及作为非成像部分的第二区域。 或者，第二区域可以以比第一区域更快的扫描速率被带电粒子束扫描，使得第二区域也是二次电子图像的成像部分。

公开(公告)号：WO2006084143A3

公开(公告)日：2007-11-01

申请号：PCT/US2006003863

申请日：2006-02-03

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  LOW RUSSELL J ,  ANGEL GORDON C

Inventor： LOW RUSSELL J ,  ANGEL GORDON C

IPC: H01J37/317 ,  H01J37/147 ,  H01J37/304

CPC classification number: H01J37/304 ,  H01J37/147 ,  H01J37/3171 ,  H01J2237/043 ,  H01J2237/15 ,  H01J2237/1501 ,  H01J2237/20228 ,  H01J2237/3045 ,  H01J2237/30472

Abstract: An analyzer module of an ion implanter includes beam deflection apparatus adjacent to a resolving opening from which a terminal ion beam portion of an ion beam emanates. In response to a beam deflection voltage of a first value of substantially zero volts in a first operating condition, the beam deflection apparatus directs a source ion beam portion of the ion beam toward the resolving opening to generate the terminal ion beam portion. When the beam deflection voltage has a high second value in a second operating condition, the beam deflection apparatus directs the species of the source ion beam portion away from the resolving opening such that the terminal ion beam portion is substantially extinguished. Beam control circuitry is operative during the second operating condition to transition the ion implanter to the first operating condition by rapidly switching the beam deflection voltage from the second value to the first value. An implantation method employs the features of the implanter to recover from glitches during implantation and thereby improve the yield of implanted wafers.

Abstract translation: 离子注入机的分析器模块包括与分离开口相邻的光束偏转装置，离子束的末端离子束部分从该分离开口发射。 响应于在第一操作条件下基本为零伏特的第一值的光束偏转电压，光束偏转装置将离子束的源离子束部分引导到分辨开口以产生终端离子束部分。 当光束偏转电压在第二操作状态下具有高的第二值时，光束偏转装置引导源离子束部分的种类远离分辨开口，使得终端离子束部分基本上熄灭。 光束控制电路在第二操作条件期间操作，以通过将光束偏转电压从第二值快速切换到第一值来将离子注入机转换到第一操作状态。 植入方法采用注入机的特征从植入期间的毛刺恢复，从而提高植入晶片的产量。

公开(公告)号：WO2015160922A1

公开(公告)日：2015-10-22

申请号：PCT/US2015/025930

申请日：2015-04-15

Applicant: KLA-TENCOR CORPORATION

Inventor： KOJIMA, Shinichi ,  WAHBA, Hamada ,  GLUSZCZAK, Michael R. ,  DI REGOLO, Joseph A.

IPC: H01J37/244

CPC classification number: G01N21/64 ,  H01J37/226 ,  H01J37/244 ,  H01J2237/043 ,  H01J2237/2443 ,  H01J2237/2446 ,  H01J2237/24578

Abstract: An electron beam detection apparatus includes a first aperture element including a first set of apertures. The apparatus includes a second aperture element including a second set of apertures. The second set of apertures is arranged in a pattern corresponding with the pattern of the first plurality of apertures. The detection apparatus includes an electron-photon conversion element configured to receive electrons of the electron beam transmitted through the first and second aperture elements. The electron-photon conversion element is configured to generate photons in response to the received electrons. The detection apparatus includes an optical assembly including one or more optical elements. The detection apparatus includes a detector assembly. The optical elements of the optical assembly are configured to direct the generated photons from the electron-photon conversion system to the detector assembly.

Abstract translation: 电子束检测装置包括包括第一组孔的第一孔元件。 该装置包括第二孔元件，其包括第二组孔。 第二组孔被布置成与第一多个孔的图案对应的图案。 检测装置包括电子 - 光子转换元件，其被配置为接收通过第一和第二孔元件传输的电子束的电子。 电子 - 光子转换元件被配置为响应于所接收的电子产生光子。 检测装置包括包括一个或多个光学元件的光学组件。 检测装置包括检测器组件。 光学组件的光学元件被配置为将所产生的光子从电子 - 光子转换系统引导到检测器组件。

公开(公告)号：WO2013167391A3

公开(公告)日：2014-01-03

申请号：PCT/EP2013058652

申请日：2013-04-25

Applicant: ARCAM AB

Inventor： SVENSSON MATTIAS ,  LJUNGBLAD ULRIC

IPC: H01J37/077 ,  B29C67/00

CPC classification number: H01J29/52 ,  B29C64/153 ,  B33Y10/00 ,  B33Y30/00 ,  H01J37/077 ,  H01J37/305 ,  H01J37/3178 ,  H01J2237/043 ,  H01J2237/3128 ,  H01J2237/31732

Abstract: The present invention relates to a plasma electron source apparatus (150). The apparatus comprises a cathode discharge chamber (100) in which a plasma is generated, an exit hole (120) provided in the cathode discharge chamber from which electrons from the plasma (107) are extracted by an accelerating field provided between the cathode discharge chamber (100) and an anode (104), at least one plasma confinement device (e.g. an electromagnetic coil 103), and a switching mechanism (190) for switching the at least one plasma confinement device between a first value allowing for electron extraction from the plasma and a second value prohibiting electron extraction from the plasma. Associated methods are also provided, in particular use of the apparatus (150) for forming a three dimensional article through successive fusion of parts of at least one layer of a powder bed provided on a work table.

Abstract translation: 等离子体电子源装置技术领域本发明涉及等离子体电子源装置（150）。 该装置包括其中产生等离子体的阴极放电室（100），设置在阴极放电室中的出射孔（120），来自等离子体（107）的电子通过提供在阴极放电室 （100）和阳极（104），至少一个等离子体限制装置（例如电磁线圈103）和切换机构（190），用于将至少一个等离子体约束装置切换到允许从 等离子体和禁止从等离子体中提取电子的第二值。 还提供了相关方法，特别是使用装置（150），用于通过连续融合设置在工作台上的至少一层粉末床的部分来形成三维制品。

公开(公告)号：WO2010014850A3

公开(公告)日：2010-04-01

申请号：PCT/US2009052309

申请日：2009-07-30

Applicant: DIRECT ELECTRON LP ,  BILHORN ROBERT B

Inventor： BILHORN ROBERT B

IPC: H01J37/244 ,  H01J37/26

CPC classification number: H01J37/244 ,  H01J37/26 ,  H01J2237/043 ,  H01J2237/15 ,  H01J2237/2441 ,  H01J2237/2443 ,  H01J2237/24455 ,  H01J2237/2447

Abstract: An apparatus (10) for use with an electron beam (30) for imaging a sample (26). The apparatus has a down-conversion detector (14) configured to detect an electron microscopy signal (32) generated by the electron beam incident on the sample, a direct bombardment detector (16) adjacent to the down-conversion detector and configured to detect the electron microscopy signal, and a mechanism (18) selectively exposing the down-conversion detector and the direct bombardment detector to the electron microscopy signal. A method using the apparatus is also provided.

Abstract translation: 一种用于与用于对样品（26）成像的电子束（30）一起使用的装置（10）。 该装置具有被配置为检测由入射在样本上的电子束产生的电子显微镜信号（32）的下变频检测器（14），与下变频检测器相邻的直接轰击检测器（16），并且被配置为检测 电子显微镜信号，以及将下转换检测器和直接轰击检测器选择性地暴露于电子显微镜信号的机构（18）。 还提供了使用该装置的方法。

公开(公告)号：WO2010027368A1

公开(公告)日：2010-03-11

申请号：PCT/US2008/075637

申请日：2008-09-08

Applicant: MULTIBEAM SYSTEMS, INC. ,  TOKYO ELECTRON LIMITED ,  PARKER, N., William

Inventor： PARKER, N., William

IPC: G21K5/10

CPC classification number: H01J37/045 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/1471 ,  H01J37/1472 ,  H01J37/3174 ,  H01J2237/043 ,  H01J2237/0451

Abstract: The invention provides methods for conjugate blanking of a charged particle beam within a charged particle column using a beam blanker. The beam blanker comprises a first deflector, a second deflector and a blanking aperture, the first deflector being positioned between a gun lens and a main lens, the second deflector being positioned between the first deflector and the main lens, the blanking aperture being positioned between the second deflector and the main lens, and the first deflector, the second deflector and the blanking aperture being aligned on the optical axis of the column. A method according to the invention comprises the steps of: configuring electron optical elements of said charged particle column to form a beam in the column either with or without a crossover; configuring the main lens to focus the beam formed by the gun lens onto a substrate plane; deflecting the beam with a first deflector in a first direction; and deflecting the beam with a second deflector in a second direction onto the blanking aperture, wherein the first direction is parallel or anti-parallel to the second direction; and wherein the image at the substrate plane does not move during blanking.

Abstract translation: 本发明提供了使用光束消除器对带电粒子束内的带电粒子束进行共轭消隐的方法。 光束消除器包括第一偏转器，第二偏转器和消隐孔，第一偏转器位于枪式透镜和主透镜之间，第二偏转器位于第一偏转器和主透镜之间，消隐孔位于 第二偏转器和主透镜，以及第一偏转器，第二偏转器和冲裁孔在柱的光轴上对准。 根据本发明的方法包括以下步骤：配置所述带电粒子的电子光学元件以在所述色谱柱中形成具有或不具有交叉的光束; 配置主透镜以将由枪形透镜形成的光束聚焦到衬底平面上; 在第一方向上用第一偏转器偏转光束; 以及将具有第二导向器的所述梁在第二方向上偏转到所述消隐孔上，其中所述第一方向平行或反平行于所述第二方向; 并且其中衬底平面处的图像在消隐期间不移动。

公开(公告)号：WO2006084143A8

公开(公告)日：2008-02-14

申请号：PCT/US2006003863

申请日：2006-02-03

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  LOW RUSSELL J ,  ANGEL GORDON C

Inventor： LOW RUSSELL J ,  ANGEL GORDON C

IPC: H01J37/317 ,  H01J37/147 ,  H01J37/304

CPC classification number: H01J37/304 ,  H01J37/147 ,  H01J37/3171 ,  H01J2237/043 ,  H01J2237/15 ,  H01J2237/1501 ,  H01J2237/20228 ,  H01J2237/3045 ,  H01J2237/30472

Abstract: An analyzer module of an ion implanter includes beam deflection apparatus adjacent to a resolving opening from which a terminal ion beam portion of an ion beam emanates. In response to a beam deflection voltage of a first value of substantially zero volts in a first operating condition, the beam deflection apparatus directs a source ion beam portion of the ion beam toward the resolving opening to generate the terminal ion beam portion. When the beam deflection voltage has a high second value in a second operating condition, the beam deflection apparatus directs the species of the source ion beam portion away from the resolving opening such that the terminal ion beam portion is substantially extinguished. Beam control circuitry is operative during the second operating condition to transition the ion implanter to the first operating condition by rapidly switching the beam deflection voltage from the second value to the first value. An implantation method employs the features of the implanter to recover from glitches during implantation and thereby improve the yield of implanted wafers.

Abstract translation: 离子注入机的分析器模块包括与分离开口相邻的光束偏转装置，离子束的末端离子束部分从该分离开口发射。 响应于在第一操作条件下基本为零伏的第一值的光束偏转电压，光束偏转装置将离子束的源离子束部分引向分辨开口以产生端子离子束部分。 当光束偏转电压在第二操作条件下具有高的第二值时，光束偏转装置引导源离子束部分的种类远离分辨开口，使得末端离子束部分基本上熄灭。 光束控制电路在第二操作条件期间操作，以通过将光束偏转电压从第二值快速切换到第一值来将离子注入机转换到第一操作状态。 植入方法采用注入机的特征从植入期间的毛刺恢复，从而提高植入晶片的产量。

公开(公告)号：WO2015126246A1

公开(公告)日：2015-08-27

申请号：PCT/NL2015/050105

申请日：2015-02-19

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： WIELAND, Marco Jan-Jaco

IPC: H01J37/317

CPC classification number: H01J37/3174 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/043 ,  H01J2237/0435 ,  H01J2237/31769

Abstract: The invention relates to a method for performing charged particle beam proximity effect correction, comprising the steps of: receiving a digital layout pattern to be patterned onto a target using one or more charged particle beams; selecting a base proximity function comprising a sum of an alpha and a beta proximity function, wherein said alpha proximity function models a short range proximity effect and said beta proximity function models a long range proximity effect, wherein a constant η is defined as a ratio between the beta proximity function and the alpha proximity function in said sum, with 0

Abstract translation: 本发明涉及一种用于执行带电粒子束邻近效应校正的方法，包括以下步骤：使用一个或多个带电粒子束将待图案化的数字布局图案接收到目标上; 选择包括α和β接近函数之和的基本接近函数，其中所述α接近函数模拟短距离邻近效应，并且所述β接近函数模拟远距离邻近效应，其中常数η被定义为 所述和的β接近函数和α接近函数为0 <η<1; 确定对应于所述基本邻近效应函数的修改的接近度函数，其中所述α邻近函数已被Dirac delta函数代替，并且使用电子处理器执行所述数字布局图案与所述修改的接近函数的去卷积，以产生经校正的 布局模式。

公开(公告)号：WO2015037285A1

公开(公告)日：2015-03-19

申请号：PCT/JP2014/064362

申请日：2014-05-30

Applicant: 株式会社日立ハイテクノロジーズ

Inventor： 津野　夏規 ,  木村　嘉伸 ,  数見　秀之 ,  川野　源 ,  富澤　淳一郎

IPC: H01J37/28 ,  H01J37/20 ,  H01J37/22

CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J37/265 ,  H01J2237/043

Abstract: 　荷電粒子線装置において、２次電子放出量の計測精度と、荷電粒子線画像の安定性とを両立させる。　荷電粒子線装置において、第１のトリガ信号により検出信号の抽出を開始し、第２のトリガ信号により前記検出信号の抽出を終了し、第１のトリガ信号と第２のトリガ信号の間隔時間Ｔを等分割するＮ回（Ｎは自然数）の第３のトリガ信号により検出信号のサンプリングをＮ回行い、間隔時間Ｔを等分割した分割時間ΔＴのそれぞれにおいてサンプリングされた信号を積分して平均化することによって二次荷電粒子を計測し、分割時間ΔＴを、計測された二次荷電粒子の数がエルゴード性が満たされる最小の荷電粒子数より多くなるように制御する。

Abstract translation: 在带电粒子束装置中同时实现测量二次电子释放量的精度和带电粒子束图像的稳定性。 在带电粒子束装置中，通过第一触发信号开始检测信号的提取，检测信号的提取由第二触发信号终止，检测信号被N次（N为自然数）N次 第三触发信号通过对第一触发信号和第二触发信号之间的时间间隔T进行相等的分割，并且通过对从每个时间分割＆Dgr; T中采样的信号进行积分和平均来测量第二阶带电粒子， 时间间隔T，时间分割＆Dgr; T被控制为使得测量的二阶带电粒子的数量大于满足遍历性的带电粒子的最小数量。

公开(公告)号：WO2010014850A2

公开(公告)日：2010-02-04

申请号：PCT/US2009/052309

申请日：2009-07-30

Applicant: DIRECT ELECTRON, LP ,  BILHORN, Robert, B.

Inventor： BILHORN, Robert, B.

IPC: H01J37/244

CPC classification number: H01J37/244 ,  H01J37/26 ,  H01J2237/043 ,  H01J2237/15 ,  H01J2237/2441 ,  H01J2237/2443 ,  H01J2237/24455 ,  H01J2237/2447

Abstract: An apparatus for use with an electron beam for imaging a sample. The apparatus has a down-conversion detector configured to detect an electron microscopy signal generated by the electron beam incident on the sample, a direct bombardment detector adjacent to the down-conversion detector and configured to detect the electron microscopy signal, and a mechanism selectively exposing the down-conversion detector and the direct bombardment detector to the electron microscopy signal. A method using the apparatus is also provided.

Abstract translation: 一种用于电子束用于成像样品的装置。 该装置具有下变换检测器，其被配置为检测由入射在样品上的电子束产生的电子显微镜信号，与下变频检测器相邻的直接轰击检测器，并且被配置为检测电子显微镜信号，以及选择性地暴露 下转换检测器和直接轰击检测器到电子显微镜信号。 还提供了使用该装置的方法。