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    PHOTOEMITTERS
    41.
    发明申请
    PHOTOEMITTERS 审中-公开
    光电发射

    公开(公告)号：WO1994001882A1

    公开(公告)日：1994-01-20

    申请号：PCT/GB1993001326

    申请日：1993-06-24

    Applicant: THIRD GENERATION TECHNOLOGY LIMITED ,  HOWORTH, Jonathan, Ross

    Inventor： THIRD GENERATION TECHNOLOGY LIMITED

    IPC: H01J01/35

    CPC classification number: H01J43/08 ,  H01J1/34 ,  H01J2201/3423

    Abstract: Photoemitters are used to convert received photons of light (or other electromagnetic radiation) into electrons, and it is common to employ an electron multiplier to amplify the low electron flux for use by an imaging or a counting system. Interest has been shown in semiconductor photoemitter and electron multiplier devices based on "mixtures" of the Group III and Group V elements gallium and arsenic or phosphorus, but these are not easy to use in a photoelectric tube. In transmissive mode these III-V materials have high sensitivity to infrared (IR), but have much poorer sensitivity to blue and ultraviolet. Now, it turns out that the III-IV materials are more blue-sensitive in reflective mode. Moreover, in this mode they are good as electron multipliers. The problem is to provide a device operating in this reflective mode with good imaging capability (the ejected electrons scatter). The present invention seeks to solve this by providing a III-V photoemitter structure where, though the photoemissive material is operating in blue-sensitive reflective mode, the device itself is operating in image-retaining transmissive mode. More specifically, the invention proposes that the III-V photoemitter layer (11) be in the form of an array of spaced III-V elements (13) the front faces of which are angled towards the gaps between the elements. Electrons (e-) ejected from the elements' front faces (by impacting photons or electrons) will, under the influence of an appropriate electrical field (E), be swept laterally towards and then through the spaces between the elements, so that though the III-V material is acting in reflective mode, and so has good blue sensitivity, the device itself is acting in transmissive mode, and so has good imaging properties. To form a photocathode/photomultiplier device a plurality of these individual III-V layers may be stacked one above the next, with the elements of each succeeding layer aligned with the gaps in the preceding layer, so that electrons ejected from each layer and passing through the gaps will impact the next adjacent layer without losing their image-defining spatial resolution.

    Abstract translation: 光收发器用于将接收的光（或其他电磁辐射）的光子转换成电子，并且通常使用电子倍增器来放大由成像或计数系统使用的低电子通量。 已经在基于III族和V族元素镓和砷或磷的“混合物”的半导体光电发生器和电子倍增器装置中显示出兴趣，但这些在光电管中不容易使用。 在透射模式下，这些III-V材料对红外（IR）具有高灵敏度，但对蓝色和紫外线具有较差的灵敏度。 现在，事实证明，III-IV材料在反射模式下对蓝色敏感。 此外，在这种模式下，它们作为电子倍增器是好的。 问题在于提供一种具有良好成像能力（喷射电子散射）的这种反射模式的装置。 本发明寻求通过提供III-V光发射器结构来解决这个问题，其中尽管光发射材料以蓝色敏感反射模式操作，但是器件本身在图像保持透射模式下操作。 更具体地，本发明提出III-V光电发射体层（11）为间隔开的III-V元件阵列（13）的形式，其前表面朝向元件之间的间隙成角度。 通过适当的电场（E）的影响，从元件的正面（通过撞击光子或电子）喷出的电子（e-）将被横向扫过，然后穿过元件之间的空间，使得尽管 III-V材料以反射模式工作，因此具有良好的蓝色灵敏度，器件本身以透射模式工作，因此具有良好的成像性能。 为了形成光电阴极/光电倍增器装置，可以将多个这些单独的III-V层叠加到下一个之上，每个后续层的元素与前一层中的间隙对准，使得从每层排出的电子通过 间隙将影响下一个相邻层，而不会失去其图像定义的空间分辨率。

    PHOTOMULTIPLIER
    42.
    发明公开
    PHOTOMULTIPLIER 审中-公开
    FOTOVERVIELFACHER

    公开(公告)号：EP1717842A4

    公开(公告)日：2008-06-18

    申请号：EP05719154

    申请日：2005-02-16

    Applicant: HAMAMATSU PHOTONICS KK

    Inventor： KYUSHIMA HIROYUKI ,  SHIMOI HIDEKI ,  KAGEYAMA AKIHIRO ,  INOUE KEISUKE ,  ITO MASUO

    IPC: H01J43/24 ,  H01J43/12 ,  H01J43/28

    CPC classification number: H01J43/08 ,  H01J9/26 ,  H01J43/04 ,  H01J43/24

    Abstract: A photomultiplier having a fine structure for realizing high multiplication efficiency. The photomultiplier comprises an enclosure the inside of which is maintained in a vacuum state. In the enclosure, a photoelectric surface for emitting photoelectrons in response to the incident light, an electron multiplying section for cascade-multiplying photoelectrons emitted from the photoelectric surface, and an anode for extracting secondary electrons produced by the electron multiplying section are provided. Especially a groove section for cascade-multiplying the photoelectrons from the photoelectric surface is formed in the electron multiplying section. On the surfaces of a pair of wall portions (311) defining the groove section, one or more projecting portions (311a) having secondary electron emitting surface are provided.

    PHOTOMULTIPLIER TUBE
    43.
    发明公开
    PHOTOMULTIPLIER TUBE 有权
    光电倍增管

    公开(公告)号：EP1708243A4

    公开(公告)日：2008-06-04

    申请号：EP04807699

    申请日：2004-12-24

    Applicant: HAMAMATSU PHOTONICS KK

    Inventor： OHMURA TAKAYUKI ,  KIMURA SUENORI ,  ITO MASUO

    IPC: H01J43/26 ,  H01J43/06 ,  H01J43/08 ,  H01J43/20

    CPC classification number: H01J43/08

    Abstract: A photomultiplier tube includes: a cathode (3) for emitting electrons by the incident light; a plurality of stages of dynode (107) for multiplying the electrons emitted from the cathode (3); and an electronic lens formation electrode (115) arranged at a predetermined position with respect to the edge of a first dynode (107a) located at the first stage from the cathode (3) and the edge of the second dynode (107b) located at the second stage from the cathode (3) and flattening the equipotential surface in the space between the first dynode (107a) and the second dynode (107b) in the longitudinal direction of the first dynode (107a). With this configuration, it is possible to improve the time resolution for the incident light.

    Photomultiplier having a photocathode comprised of semiconductor material
    47.
    发明公开
    Photomultiplier having a photocathode comprised of semiconductor material 失效
    Photovervielfacher mit einer aus Halbleitermaterial bestehender Photokathode

    公开(公告)号：EP0718865A2

    公开(公告)日：1996-06-26

    申请号：EP95309258.2

    申请日：1995-12-19

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Niigaki, Minoru, c/o Hamamatsu Photonics K.K. ,  Hirohata, Toru, c/o Hamamatsu Photonics K.K. ,  Suzuki, Tomoko, c/o Hamamatsu Photonics K.K. ,  Yamada, Masami, c/o Hamamatsu Photonics K.K.

    IPC: H01J1/34 ,  H01J43/08

    CPC classification number: H01J1/34 ,  H01J43/08 ,  H01J2201/3423

    Abstract: A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode (15) and a lower surface electrode (17) by a battery (18). Upon application of this voltage, a p-n junction formed between a contact layer (14) and an electron emission layer (13) is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer (12) in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer into excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transited, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.

    Abstract translation: 提供了光电转换特性的稳定性和再现性优异并且具有能够获得高光敏性的结构的光电发射表面。 通过电池（18）在上表面电极（15）和下表面电极（17）之间施加预定的电压。 在施加该电压时，形成在接触层（14）和电子发射层（13）之间的p-n结被反向偏置。 耗尽层从p-n结延伸到光电发射表面，并且在电子发射层中形成电场，并在光子电子的加速方向上形成光吸收层（12）。 当入射光在光吸收层中被吸收到激发光电子中时，光电子被电场加速到发射表面。 光电子在该电场加速时获​​得能量，并且在电子发射层中转移到更高能级的导带，并发射到真空中。

    Particle detector
    48.
    发明公开
    Particle detector 失效
    颗粒检测器

    公开(公告)号：EP0287414A3

    公开(公告)日：1988-11-02

    申请号：EP88400703

    申请日：1988-03-23

    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

    Inventor： Chianelli, Claude

    IPC: G01T01/28 ,  H01J43/08

    CPC classification number: G01T1/28 ,  H01J43/04 ,  H01J43/08

    Abstract: Détecteur de particules, issues notamment d'une source pulsée (25), principalement très peu ionisantes.
    Les particules (14) créent une émission d'électrons secondaires (15) en passant à travers une couche très mince de CsI poreux (20) ; des dispositifs multiplicateurs (2, 6) sont prévus. La capacité émissive du CsI poreux est maintenue en inversant par un commutateur (13) le champ électrique appliqué à cette couche par deux électrodes (19, 21), notamment entre deux paquets de particules.

    TRANSMISSION PHOTOCATHODE
    49.
    发明公开
    TRANSMISSION PHOTOCATHODE 审中-公开
    ÜBERTRAGUNGSPHOTOKATHODE

    公开(公告)号：EP3065159A4

    公开(公告)日：2017-06-28

    申请号：EP14858313

    申请日：2014-08-08

    Applicant: HAMAMATSU PHOTONICS KK

    Inventor： NAGATA TAKAAKI ,  HAMANA YASUMASA ,  NAKAMURA KIMITSUGU

    IPC: H01J1/34 ,  H01J1/32 ,  H01J40/06 ,  H01J43/08 ,  H01J43/10

    CPC classification number: H01J1/34 ,  H01J1/32 ,  H01J40/06 ,  H01J43/08 ,  H01J43/10

    Abstract: A transmission mode photocathode 2 comprises: an optically transparent substrate 4 having an outside face 4a to which light is incident, and an inside face 4b from which the light incident to the outside face 4a side is output; a photoelectric conversion layer 5 disposed on the inside face 4b side of the optically transparent substrate 4 and configured to convert the light output from the inside face 4b into a photoelectron or photoelectrons; and an optically-transparent electroconductive layer 6 comprising graphene, and disposed between the optically transparent substrate 4 and the photoelectric conversion layer 5.

    Abstract translation: 透射模式光电阴极2包括：光学透明基板4，其具有光入射到其的外侧面4a和从其射出入射到外侧面4a侧的光的内侧面4b; 设置在光学透明基板4的内表面4b侧并且被配置为将从内表面4b输出的光转换为光电子或光电子的光电转换层5; 和包含石墨烯的光学透明导电层6，并且设置在光学透明基板4和光电转换层5之间。

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