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    Support and focus structure for photomultiplier
    41.
    发明授权
    Support and focus structure for photomultiplier 失效
    光电倍增管的支撑和聚焦结构

    公开(公告)号：US3873867A

    公开(公告)日：1975-03-25

    申请号：US43665474

    申请日：1974-01-25

    Applicant: RCA CORP

    Inventor： GIRVIN HAROLD HAYES

    IPC: H01J43/06 ,  H01J43/04 ,  H01J39/02 ,  H01J39/14

    CPC classification number: H01J43/04

    Abstract: A mounting means is provided for substantially electrically isolating an electrode assembly of a photomultiplier from the inner surface wall of a glass envelope. The electrode assembly also includes an electrode focussing means for substantially preventing divergent electrons from impinging on electrode support spacers. The combination substantially eliminates the operational electrical instability known as hysteresis.

    Abstract translation: 提供了一种安装装置，用于将光电倍增器的电极组件与玻璃封套的内表面壁基本上电隔离。 电极组件还包括用于基本上防止发散电子撞击在电极支撑间隔物上的电极聚焦装置。 该组合基本上消除了称为滞后的操作电气不稳定性。

    Photomultiplier tube having impact ionization diode collector
    45.
    发明授权
    Photomultiplier tube having impact ionization diode collector 失效
    具有冲击电离二极管收集器的光电倍增管

    公开(公告)号：US3885178A

    公开(公告)日：1975-05-20

    申请号：US48770474

    申请日：1974-07-11

    Applicant: VARIAN ASSOCIATES

    Inventor： GOEHNER RONALD H

    IPC: H01J43/04 ,  H01J39/02 ,  H01J43/18 ,  H01J43/22

    CPC classification number: H01J43/04

    Abstract: A photomultiplier tube (PMT) converts a received light signal to an output electrical signal of substantially greater intensity by employing a photocathode to convert incident light to free electrons, a plural dynode accelerating structure for effectively multiplying said free electrons, and an impact ionization diode (IID) for further multiplying and collecting said free electrons to provide a corresponding electrical output signal. The PMT can be an electrostatic device, in which the photocathode and the dynodes are mounted in opposed staggered positions, or a static crossed field device, in which the photocathode and the dynodes all are mounted opposite an accelerating rail and a magnetic field is provided to urge the electrons laterally along the tube. The IID''s junction is reverse biased and the entire diode is maintained at a substantially higher potential than the last dynode. The PMT can be gain controlled or turned off without affecting dynode potentials by controlling the IID''s potential. Due to the gain provided by the IID, dynode current can be reduced greatly, thereby to increase substantially the tube''s life without affecting its overall gain.

    Abstract translation: 光电倍增管（PMT）通过使用光电阴极将入射光转换成自由电子，将接收到的光信号转换成具有显着更大强度的输出电信号，用于有效地乘以所述自由电子的多倍增电极加速结构和冲击电离二极管 IID），用于进一步乘法和收集所述自由电子以提供对应的电输出信号。 PMT可以是其中光电阴极和倍增极安装在相对交错位置的静电装置，或静电交叉场设备，其中光电阴极和倍增电极都与加速轨相对安装，并且提供磁场 沿着管子侧向推动电子。 IID的结点是反向偏置的，并且整个二极管保持在比最后的倍增电极显着更高的电位。 通过控制IID的电位，PMT可以被增益控制或关断，而不影响倍增电压。 由于IID提供的增益，可以大大减小倍增极电流，从而大大提高管的寿命，而不影响其整体增益。

    Optoelectronic semiconductor device
    46.
    发明授权
    Optoelectronic semiconductor device 失效
    光电半导体器件

    公开(公告)号：US3639770A

    公开(公告)日：1972-02-01

    申请号：US3639770D

    申请日：1968-09-23

    Applicant: TELEFUNKEN PATENT

    Inventor： ZIZELMANN WALTER

    IPC: G01F23/292 ,  G01N21/43 ,  G01N21/26 ,  G01N21/46 ,  G02B21/00 ,  H01J39/02

    CPC classification number: G01F23/2925 ,  G01N21/43

    Abstract: An optoelectronic or photosensitive semiconductor device in which a light-emitting element and a light-responsive element are arranged in a common casing, the degree of photocoupling between the two elements being dependent entirely on conditions exterior of the casing. In one embodiment, the two elements are embedded in a light-permeable mass, the boundary surface of which, together with a medium surrounding the mass, forms a surface whose reflection characteristic is dependent on the indices of refraction of the mass and of the medium, the elements themselves being so arranged that when the index of refraction of the medium is such that the boundary reflects the light coming from the light-emitting element, the reflected light is picked up by the light-responsive element, with the amount of light being picked up being dependent on, and thus an indication of, the medium surrounding the mass. In another embodiment, light emitted by the light-emitting element is free to exit the mass and, if reflected by an object outside the mass, is picked up by the lightresponsive element.

    Abstract translation: 其中发光元件和光响应元件布置在公共壳体中的光电子或光敏半导体器件，两个元件之间的光耦合程度完全取决于壳体外部的条件。 在一个实施例中，两个元件被嵌入在透光质量块中，其透明质量块的边界表面与围绕物质的介质一起形成反射特性取决于质量和介质的折射率的表面 元件本身被布置成使得当介质的折射率使得边界反射来自发光元件的光时，反射光被光响应元件拾取，具有光量 被拾取依赖于，并且因此指示围绕质量的介质。 在另一个实施例中，由发光元件发射的光自由地离开质量块，并且如果被质量外的物体反射，则由光响应元件拾取。

    Image intensifier unitube for intensified charge transfer device and method of manufacture
    50.
    发明授权
    Image intensifier unitube for intensified charge transfer device and method of manufacture 失效
    用于强化电荷转移装置的图像增强器单元和制造方法

    公开(公告)号：US4178528A

    公开(公告)日：1979-12-11

    申请号：US922015

    申请日：1978-07-05

    Applicant: Andrew J. Kennedy

    Inventor： Andrew J. Kennedy

    IPC: H01J40/16 ,  H01J39/02 ,  H01J39/14

    CPC classification number: H01J40/16

    Abstract: A unitube that is used in intensified charge transfer devices (ICTDs) hav a semiconductor charge transfer device in proximity focus with the photocathode. The unitube is comprised of a tube base section having a centrally raised portion where the charge transfer device (CTD) is internally mounted directly thereon and of an external open space for the mounting of a thermoelectric (TE) cooler for cooling the semiconductor CTD.The CTD has a grounded metal shield overlapping its outer portion to avoid high voltage break down in the area between the high voltage photocathode and the CTD. The base may be brazed to one end of the image intensifier tube wall by a Kovar ring. The faceplate may be attached to the other end of the image intensifier by a blunt or knife edge type indium seal.

    Abstract translation: 用于具有与光电阴极接近的半导体电荷转移装置的强化电荷转移装置（ICTD）中的单元管。 单元管由具有中央凸起部分的管状基部构成，其中电荷转移装置（CTD）直接内部安装在其上，并具有用于安装用于冷却半导体CTD的热电（TE）冷却器的外部开放空间。 CTD具有与其外部部分重叠的接地金属屏蔽，以避免在高压光电阴极和CTD之间的区域内的高压分解。 可以通过Kovar环将基底钎焊到图像增强管壁的一端。 面板可以通过钝刀或刀刃型铟密封件附接到图像增强器的另一端。

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