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公开(公告)号：KR1020080103012A
公开(公告)日：2008-11-26
申请号：KR1020080047218
申请日：2008-05-21
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065
CPC classification number: H01J37/32715 , H01L21/68785
Abstract: A mounting table and a plasma processing apparatus using the same are provided to reduce the repair frequency of the sprayed coating. A mounting table(3) performing the plasma processing to substrate mount within the process chamber comprises the material(5); the loader(6) on which the substrate is mounted on the upper part. The loader comprises the ceramics member(43) in which the loader comprises the edge portion; the spraying part having the ceramics. The portion wise sealed member is equipped around the loader.
Abstract translation: 提供了安装台和使用其的等离子体处理装置，以减少喷涂涂层的修复频率。 对处理室内的基板安装进行等离子体处理的安装台（3）包括材料（5）; 其上安装有基板的装载器（6）在上部。 装载机包括陶瓷构件（43），其中装载器包括边缘部分; 喷涂部分具有陶瓷。 在装载机周围装有部分密封的构件。
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公开(公告)号：KR1020080081850A
公开(公告)日：2008-09-10
申请号：KR1020080020438
申请日：2008-03-05
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/68 , H01L21/3065
Abstract: A substrate mounting stage and a substrate processing apparatus are provided to prevent gas from leaking between a substrate and a stage portion by enhancing a coupling tightness between the substrate and the stage portion. A substrate mounting stage includes a base member(110), a dielectric material layer(120), and plural blocks(142). The dielectric material layer is formed on the base member. A substrate is mounted on the dielectric material layer. The blocks are formed on the dielectric material layer. Each of the blocks is made of a material including a portion, whose hardness is smaller than that of the substrate. An upper portion of the block is made of a material, whose hardness is smaller than that of the substrate. An overall portion of the block is made of a material, whose hardness is smaller than that of the substrate.
Abstract translation: 提供了基板安装台和基板处理装置，以通过增强基板和台部之间的联接密封性来防止气体在基板和台部之间的泄漏。 基板安装台包括基部构件（110），介电材料层（120）和多个块（142）。 介电材料层形成在基体上。 将基板安装在电介质材料层上。 这些块形成在电介质材料层上。 每个块由包括其硬度小于基底的硬度的部分的材料制成。 块的上部由硬度比基板的硬度小的材料制成。 块的整体部分由硬度小于基材的硬度的材料制成。
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公开(公告)号：KR100845350B1
公开(公告)日：2008-07-10
申请号：KR1020080019071
申请日：2008-02-29
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H01L21/68
Abstract: 본 발명의 과제는 정전 흡착 전극의 가스 유로에서의 이상 방전을 방지하는 동시에, 만일 가스 유로에서 이상 방전이 생겼을 경우라도 용이하게 수리할 수 있는 정전 흡착 전극을 제공하는 것이다. 정전 척(5)은 서로 분리 가능한 제 1 기재(30)와 제 2 기재(31)로 이루어지는 조합 구조를 갖는다. 제 1 기재(30) 상의 유전체 재료막(8)내에는 전극(6a)이, 제 2 기재(31) 상의 유전체 재료막(8)내에는 전극(6b)이 각각 매설되어 있다. 제 1 기재(30)와 제 2 기재(31)를 조합한 상태에서, 양자 사이에는 제 1 기재(30)의 주위를 둘러싸도록 간극이 형성되고, 이 간극이 열전달 가스를 공급하는 가스 공급 슬릿(9c)으로서 기능을 한다.
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公开(公告)号：KR1020080025391A
公开(公告)日：2008-03-20
申请号：KR1020080019071
申请日：2008-02-29
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H01L21/68
CPC classification number: H01L21/6833 , H01J37/32724
Abstract: An electrostatic absorption electrode and a processing apparatus are provided to obtain high heat delivery efficiency by implementing a heat delivery medium liquid path between absorption electrodes. An electrostatic absorption electrode(5) includes plural base members(30,31), which are detached from each other, and mount planes(5a,5b) for mounting an objective member(G). A heat delivery medium liquid path(9c) for providing heat delivery medium toward a rear surface of the objective member is formed between at least two the base members in the electrode to reach up to the mount planes. The heat delivery medium liquid path is formed with an angle, 45‹Œ15‹, with respect to a vertical direction.
Abstract translation: 提供一种静电吸收电极和处理装置，以通过在吸收电极之间实现传热介质液体路径来获得高的传热效率。 静电吸收电极（5）包括彼此分离的多个基体部件（30,31）和用于安装目标部件（G）的安装平面（5a，5b）。 在电极中的至少两个基底部件之间形成用于向物体的后表面提供传热介质的传热介质液体路径（9c），以达到安装平面。 传热介质液体路径相对于垂直方向形成45°<15°的角度。
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公开(公告)号：KR1020080014673A
公开(公告)日：2008-02-14
申请号：KR1020070080311
申请日：2007-08-09
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/02
Abstract: An electrostatic sucking electrode, a substrate processing apparatus and a method of manufacturing the same are provided to improve thermal tolerance of an electrostatic chuck by using a first insulation layer as a buffer layer. An electrostatic sucking electrode includes a substrate holding surface(50) for sucking and maintaining a substrate using an electrostatic force. An insulation layer(42b) is formed on a substrate(41), and an electrode(43) is disposed on the insulation layer. A portion or the whole portion of the insulation layer is formed by ceramic thermal spraying having a coefficient of linear expansion, of which an absolute value of a difference between it and a coefficient of linear expansion of the substrate is less than 14 x 10^(-6) deg.C.
Abstract translation: 提供静电吸引电极，基板处理装置及其制造方法，以通过使用第一绝缘层作为缓冲层来改善静电卡盘的耐热性。 静电吸引电极包括用于使用静电力吸引和保持基板的基板保持面（50）。 绝缘层（42b）形成在基板（41）上，电极（43）设置在绝缘层上。 绝缘层的一部分或整个部分是通过具有线性膨胀系数的陶瓷热喷涂形成的，其中其与衬底的线膨胀系数的绝对值小于14×10 ^（ -6）℃
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Patent Agency Ranking
公开(公告)号：KR1020060133485A
公开(公告)日：2006-12-26
申请号：KR1020060055096
申请日：2006-06-19
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065
CPC classification number: H01L21/67069 , H01J37/32532 , H01L21/67109 , H01L21/67248
Abstract: An upper electrode, a plasma processing apparatus, a plasma processing method, and a recording medium having a control program recorded therein are provided to control accurately temperature of an electrode plate by using a temperature control unit having a heating medium path. An upper electrode(11) is arranged opposite to a loading plate within a process chamber of a plasma processing apparatus. A substrate as a processing target is loaded on the loading plate. An electrode plate(13) includes a plurality of outlets for discharging a processing gas to the substrate loaded on the loading plate. A plurality of temperature control units are disposed on the electrode plate to control the temperature of the electrode plate. The temperature control unit includes a heating medium path to circulate a heating medium.
Abstract translation: 提供上电极，等离子体处理装置，等离子体处理方法和其中记录有控制程序的记录介质，以通过使用具有加热介质路径的温度控制单元精确控制电极板的温度。 上电极（11）与等离子体处理装置的处理室内的装载板相对设置。 作为加工对象的基板被装载在装载板上。 电极板（13）包括多个出口，用于将处理气体排放到装载在装载板上的基板上。 多个温度控制单元设置在电极板上以控制电极板的温度。 温度控制单元包括用于循环加热介质的加热介质路径。
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公开(公告)号：KR1020060105667A
公开(公告)日：2006-10-11
申请号：KR1020060029671
申请日：2006-03-31
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065
CPC classification number: H01J37/32165 , H01L21/67069
Abstract: 본 발명은, 플라즈마 처리 장치에 있어서, 상부 전극에 제 1 주파수 전력보다 낮은 제 2의 고주파 전력 300W 이상 1000W 이하를 가한 후, 1∼3초의 시간차를 갖고 제 1 주파수 전력을 더하여, 최초에 제 2 고주파 전력에 의해 시스(sheath)를 생성함으로써, 제 1 고주파 전력을 인가하더라도, 샤워헤드의 가스 구멍 중에 플라즈마가 들어가는 것을 저지하여 아크 방전을 억제하기 위한 것으로, 플라즈마 처리 장치(10)에 있어서, 상부 전극(13)과 하부 전극(14)을 처리실(12) 내에 대향하여 배치하고, 상부 전극(13)에 제 1 주파수보다 낮은 제 2 고주파 전원으로부터 제 2 고주파 전력을 최초에 인가하며, 그 후 1∼3초의 시간차를 갖고 제 1 고주파 전력을 중첩하여 인가하는 것을 특징으로 한다.
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公开(公告)号：KR102260238B1
公开(公告)日：2021-06-02
申请号：KR1020190065203
申请日：2019-06-03
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/683 , H01L21/67
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公开(公告)号：KR102085409B1
公开(公告)日：2020-03-05
申请号：KR1020170177202
申请日：2017-12-21
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/67 , H01L21/683 , H01J37/32
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公开(公告)号：KR101828862B1
公开(公告)日：2018-02-13
申请号：KR1020160084682
申请日：2016-07-05
Applicant: 도쿄엘렉트론가부시키가이샤
Abstract: 플라즈마에의한부식에대한내구성이뛰어난샤워헤드를제공한다. 플라즈마처리장치(11)에구비되는샤워헤드(22)는챔버(20) 내에처리가스를토출하는가스토출홀(40)과가스토출홀(40)의가스토출구측에형성된오목부를가지는기재(60)와, 세라믹스또는스테인리스로이루어지고, 기재(60)의오목부에고정된원통형상의슬리브를가지고, 슬리브의표면과기재(60)에있어서슬리브가배치된면이내플라즈마피막(63)으로덮인구조로한다. 세라믹스슬리브(61)를이용하는경우에는기재(60)의플라즈마생성공간(S)측의면과내플라즈마피막(63)과의사이에하지피막(62)을마련한다.
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